JPS6196773A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6196773A JPS6196773A JP59216329A JP21632984A JPS6196773A JP S6196773 A JPS6196773 A JP S6196773A JP 59216329 A JP59216329 A JP 59216329A JP 21632984 A JP21632984 A JP 21632984A JP S6196773 A JPS6196773 A JP S6196773A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- laser
- type layer
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、半導体装置の製造方法に関し、詳しくは、オ
ーミック性が良いｐｎ接合又はｎｐ接合を有する半導体
部を含有する半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device containing a semiconductor portion having a pn junction or an np junction with good ohmic properties.
オーミック性が良いｐｎ接合又はｎｐ接合が要求される
ものの例として、いわゆるタンデム型のアモルファスシ
リコン太陽電池がある（特公昭５５−１２５６８０およ
び同５８−１１６７７９参照）。An example of a device that requires a pn junction or an np junction with good ohmic properties is a so-called tandem type amorphous silicon solar cell (see Japanese Patent Publications No. 55-125680 and No. 58-116779).
この太陽電池の構造は、通常、ガラス基板／透明電極／
ｐｉｎ／ｐｉｎ／・・・・・・／金属電極から構成され
、ｐｉｎの光電変換素子が二段以上に積層され電気的に
直列接続となっている。このため、ｐ及びｎ層の低抵抗
化とともに、ｐｎ接合部のオーミック性の向上が重要で
ある。従来用いられているｐ層は約１０Ω・ｃｍ、ｎ層
は１０〜１Ω・ｃｍと高く、直列抵抗やオーミック性不
良の為、太陽電池の出力特性の性能に問題があった。The structure of this solar cell is usually a glass substrate/transparent electrode/
It is composed of pin/pin/.../metal electrodes, and the pin photoelectric conversion elements are stacked in two or more stages and electrically connected in series. Therefore, it is important to reduce the resistance of the p and n layers and to improve the ohmic properties of the pn junction. The conventionally used p-layer has a high resistance of about 10 Ω·cm, and the n-layer has a high resistance of 10 to 1 Ω·cm, which causes problems in the output characteristics of solar cells due to series resistance and poor ohmic properties.
本発明の目的は、かかる従来の問題点を解決し、ｐｎ接
合層の低抵抗化とｐｎ接合部のオーミック性向上を形成
できる半導体装置の製造方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device that solves the conventional problems and can lower the resistance of the pn junction layer and improve the ohmic properties of the pn junction.
従来、半導体膜の低抵抗化を実現し、かつｐｎ接合部の
オーミック性を向上させる方法として熱処理法がある。Conventionally, there is a heat treatment method as a method for realizing lower resistance of a semiconductor film and improving ohmic properties of a pn junction.
しかし、アモルファス膜の場合、通常の電気炉を用いる
長時間熱処理では、活性層であるノンドープ層が変質し
、太陽電池性能が劣化してしまう。この点を解決するた
め、本発明では、熱処理時間が１秒以下のレーザを用い
た短時間熱処理法を用いる。レーザとして、パルスレー
ザとＣＷレーザがあり、ＣＷの場合、走査速度を早くす
れば実質的に短時間の熱処理が可能である。However, in the case of an amorphous film, long-term heat treatment using a normal electric furnace causes the non-doped active layer to change in quality and deteriorate the solar cell performance. In order to solve this problem, the present invention uses a short-time heat treatment method using a laser in which the heat treatment time is 1 second or less. Lasers include pulsed lasers and CW lasers, and in the case of CW, heat treatment can be performed in a substantially short time if the scanning speed is increased.
かかるレーザの例として次のものがある。パルスレーザ
として、エキシマレーザ（波長１５７〜３５１１ｍ）、
ルビーレーザ（６９４ｎｍ）、ネオジウムＹＡＧ（２６
６，５３２，１０６４ｎｍ）、ガラスレーザ（５ａ １
ｎｍ）やアレキサンドライトレーザ（７００〜８１８
ｎｍ）などがある。ＯＷレーザとして、Ａｒイオンレー
ザ（２５７ｎｍ）やＨｅＮｅｖ−ザ（６３３ｎｍ）など
がある。今迄、アモルファスシリコンのレーザアニール
としてＱスイッチのＮｄ： ＹＡＧＬ／−ザ（１０６４
ｎｍ）が用いられた例は知られていたが、このような長
波長光では、アモルファスシリコン模の吸収係数が小さ
く、膜全体に光が吸収されるため、極めて薄いｐ、ｎ膜
のみを処理することは出来なかった。従って、良好な太
陽電池性能は得られていない。Examples of such lasers include: As a pulse laser, excimer laser (wavelength 157 to 3511 m),
Ruby laser (694 nm), neodymium YAG (26
6,532,1064nm), glass laser (5a 1
nm) or alexandrite laser (700-818 nm)
nm) etc. Examples of the OW laser include an Ar ion laser (257 nm) and a HeNev laser (633 nm). Until now, Q-switch Nd:YAGL/-The(1064
There were known examples in which amorphous silicon was used for such long wavelength light, but since the absorption coefficient of the amorphous silicon model was small and the light was absorbed by the entire film, it was difficult to treat only extremely thin p and n films. I couldn't do it. Therefore, good solar cell performance has not been obtained.
アモルファスシリコン太陽電池において、レーザアニー
ルするｐｎ接合部を含めたｐ層とｎ層の全膜厚は２０〜
４ Ｑ ｎｍである。このため、上記各種レーザ光の中
で、波長４００ ｎｍ以下のレーザ光を用いれば吸収係
数ＩＱｃｍ−” となシ光の吸収深さは約ＩＱｎｍで
、縦方向の上部半導体層のみ熱処理できるなどの利点を
有する。これに適したレーザとして、エキシマレーザ（
波長二重型で２６６ｎｍ）がある。特に、エキシマレー
ザは励起ガスの種類を変えて、発振波長を変えることが
可能である。例えば、Ｆ２（１５７ｎｍ）、ＡｎＦ（１
９３ｎｍ）、Ｋｒ０１ （２２２ｎｍ）、ｌ（ＩＰ（２
４８ｎｍ’）、ＸｅＢｒ（２８２ｎｍ）、Ｘｅ０１ （
３０８ｎｍ）とＸｅＦ （３５１ｎｍ）で出力も数十Ｗ
迄の大出力で大口径のレーザが得られる。In amorphous silicon solar cells, the total thickness of the p layer and n layer including the pn junction to be laser annealed is 20~
4 Q nm. Therefore, among the various laser beams mentioned above, if a laser beam with a wavelength of 400 nm or less is used, the absorption coefficient of the light will be IQcm-''. The excimer laser (
There is a wavelength dual type (266 nm). In particular, the oscillation wavelength of excimer lasers can be changed by changing the type of excitation gas. For example, F2 (157 nm), AnF (1
93 nm), Kr01 (222 nm), l(IP(2
48nm'), XeBr (282nm), Xe01 (
308nm) and XeF (351nm) with an output of several tens of W.
A large diameter laser with high output can be obtained.
本発明は、かかる波長が４００ ｎｍ以下の短波長のレ
ーザを用い、ｐｎ接合部分のみを熱処理することによシ
、ｐｎ接合の電気抵抗を下げ、オーミックな特性を与え
ることを特徴としている。半導体膜として、Ｂ又はＡＩ
！などのｐ形不純物、Ｐ、又Ｓｉ膜中に含有させる工程
として、プラズマＯＶＤなどの膜形成中にガスから導入
する方法とノンドープ又は低濃度ドープ層中にイオン打
込み法で導入する方法などがある。The present invention is characterized by using a laser having a short wavelength of 400 nm or less and heat-treating only the pn junction, thereby lowering the electrical resistance of the pn junction and giving it ohmic characteristics. As a semiconductor film, B or AI
! There are two methods for incorporating p-type impurities such as P and P into the Si film: a method of introducing them from a gas during film formation such as plasma OVD, and a method of introducing them into a non-doped or lightly doped layer by ion implantation. .
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
実施例１
第１図に示したように、ガラス板１に透明電極２が形成
されたものを基板として用い、該基板上にグロー放電を
用いるプラズマＯＶＤ法によｌｎ形層３、ｐ形Ｍ４を形
成した。第１図の（ｂ）は、その後、波長３５０ ｎｍ
のエキシマレーザでｐｎ接合を含むｐ層とｎ層の二層を
同時に照射し、９層７と０層６の低抵抗膜とｐｎ接合の
オーミック性の向上を図った。最後に、第１図（ａｌ及
び第１図（ｂ）の両方にＡＩ！電極５を蒸着した。第２
図は、第１図のレーザ照射が＠（第１図（ｓ） ）及び
有（第１図（ｂ））の時のｐｎ形ダイオードの直列抵抗
及びオーミック性を調べた電流−電圧特性である。第２
図（ａ）の曲線は、レーザ照射が無い時の曲線で、第２
図（ｂ）の曲線は、レーザ照射が有る時の曲線である。Example 1 As shown in FIG. 1, a glass plate 1 on which a transparent electrode 2 is formed is used as a substrate, and an ln-type layer 3 and a p-type M4 are deposited on the substrate by a plasma OVD method using glow discharge. was formed. (b) of FIG. 1 is then shown at a wavelength of 350 nm.
The two layers, the p layer and the n layer, including the pn junction, were simultaneously irradiated with an excimer laser to improve the ohmic properties of the low resistance films of the 9th layer 7 and 0th layer 6 and the pn junction. Finally, the AI! electrode 5 was deposited on both FIG. 1(al) and FIG. 1(b).
The figure shows the current-voltage characteristics obtained by examining the series resistance and ohmic properties of the pn-type diode when the laser irradiation in Figure 1 is @ (Figure 1 (s)) and with (Figure 1 (b)). . Second
The curve in figure (a) is the curve when there is no laser irradiation, and the second
The curve in Figure (b) is the curve when laser irradiation is present.
レーザ照射した結果、オーミック性が向上した。これに
より、ｐｎ形ダイオードの直列抵抗が低下し、ｐｎ接合
部のオーミック性が改善された。As a result of laser irradiation, ohmic properties improved. This reduced the series resistance of the pn type diode and improved the ohmic properties of the pn junction.
実施例２
タンデム型のアモルファスシリコン太陽電池の製造方法
を示す。第３図（Ｃ）は、ガラス板１１に透明電極１２
が形成されたものを基板として用い、該基板上にプラズ
マＯＶＤ法によ、９ｐ形層工３、ｎ形層１４、ｎ形層１
５、ｐ形層１６、ｎ形層１７、そしてｎ形層１８を順次
＠層し、最後にＡ４電極１９を蒸着し、光電変換素子ｐ
ｉｎ層が二段になったタンデム型太＠電池である。第３
図（ｄ）は、２ｇ３図（Ｃ）の１層１４及び９層１５の
ｐｔｔ接合部を含有するｐｎ層の二層をエキシマレーザ
で照射し、その後、１層１７．１層１８を順次積層し、
最後に１電極１９を蒸着したタンデム型太陽電池である
。第４図は、第３図（Ｃ）及び第３図（ｄ）のタンデム
型太陽電池の電流−電圧特性を示した。Example 2 A method for manufacturing a tandem type amorphous silicon solar cell is shown. FIG. 3(C) shows a transparent electrode 12 on a glass plate 11.
A 9p-type layer 3, an n-type layer 14, and an n-type layer 1 are formed on the substrate by plasma OVD method.
5. The p-type layer 16, the n-type layer 17, and the n-type layer 18 are layered one after another, and finally the A4 electrode 19 is deposited to form the photoelectric conversion element p.
It is a tandem type thick @ battery with two layers of inner layers. Third
Figure (d) shows that the two pn layers containing the PTT junctions of layer 1 14 and layer 9 15 in Figure 2g3 (C) are irradiated with an excimer laser, and then layer 1 17 and layer 1 18 are sequentially laminated. death,
This is a tandem solar cell in which one electrode 19 is finally deposited. FIG. 4 shows the current-voltage characteristics of the tandem solar cells shown in FIGS. 3(C) and 3(d).
第４図（Ｃ）は、ｐｎ接合部をレーザアニールしていな
い太陽電池曲線で、第４図（ｄ）はレーザアニールをし
た太陽電池曲線である。レーザアニールした（ｄ）の曲
線が、太陽電池のシリーズ抵抗が減少し、かつオーミッ
ク性が改善された。このため、太陽電池の曲線因子が０
．４５から０．５７と大幅に改善し、光電変換効率も５
．６チから６．８９ｇと向上した。FIG. 4(C) is a solar cell curve without laser annealing the pn junction, and FIG. 4(d) is a solar cell curve with laser annealing. The laser annealed curve (d) shows that the series resistance of the solar cell is reduced and the ohmic properties are improved. Therefore, the fill factor of the solar cell is 0.
．． Significant improvement from 45 to 0.57, and photoelectric conversion efficiency was also 5.
．． It improved from 6 inches to 6.89g.
本発明によれば、ｐｎ接合（又はｎｐ接合）を有するｐ
層及びｎ層の二層をレーザアニール処理で、同時に低抵
抗なｐ層及びｎ層を作製でき、かつｐｎ接合（又はｎｐ
接合）部のオーミック性を改善できる。そして極めて薄
い上層部半導体層のみを処理できるため、活性層である
ノンドープ層。 が変質することがない。According to the present invention, p having a pn junction (or np junction)
By laser annealing two layers, the p-layer and the n-layer, it is possible to simultaneously create a low-resistance p-layer and n-layer, and to form a p-n junction (or np-layer).
The ohmic properties of the joint) can be improved. And since only the extremely thin upper semiconductor layer can be processed, the active layer is a non-doped layer. will not change in quality.
第１図及び第３図は本発明の異なる実施例を示す工程図
であり、第２図及び第４図は本発明の詳細な説明するた
めの図である。
１．１１・・・カラス板、２，１２・・・透Ｆ９３電極
、３゜６・・・ｎ形層、４，７・・・ｐ形層、５，１９
・・・Ａｌ電極、１３，１６・・・ｐ形層、１４．１７
・・・ｎ形層、１５．１８・・・ｎ形層。1 and 3 are process diagrams showing different embodiments of the present invention, and FIGS. 2 and 4 are diagrams for explaining the present invention in detail. 1.11... Glass plate, 2,12... Transparent F93 electrode, 3゜6... N-type layer, 4,7... P-type layer, 5,19
...Al electrode, 13,16...p-type layer, 14.17
... n-type layer, 15.18... n-type layer.
Claims (1)
とする非単結晶相で構成されたｎｐ接合またはｐｎ接合
を有する半導体膜に、波長４００ｎｍ以下の光を照射す
ることにより、低抵抗でオーミックなｎｐ接合またはｐ
ｎ接合を得ることを特徴とする半導体装置の製造方法。1. By irradiating a semiconductor film with an np junction or pn junction, which is composed of a non-single crystal phase mainly composed of silicon containing n-type or p-type impurities, with light of a wavelength of 400 nm or less, it becomes ohmic with low resistance. np junction or p
A method for manufacturing a semiconductor device characterized by obtaining an n-junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59216329A JPH065780B2 (en) | 1984-10-17 | 1984-10-17 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59216329A JPH065780B2 (en) | 1984-10-17 | 1984-10-17 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6196773A true JPS6196773A (en) | 1986-05-15 |
| JPH065780B2 JPH065780B2 (en) | 1994-01-19 |
Family
ID=16686824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59216329A Expired - Lifetime JPH065780B2 (en) | 1984-10-17 | 1984-10-17 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065780B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133578A (en) * | 1986-11-25 | 1988-06-06 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681981A (en) * | 1979-09-21 | 1981-07-04 | Messerschmitt Boelkow Blohm | Semiconductor forming element for converting light to electric energy |
| JPS5745980A (en) * | 1980-09-02 | 1982-03-16 | Mitsubishi Electric Corp | Amorphous solar battery and manufacture thereof |
| JPS5799729A (en) * | 1981-10-20 | 1982-06-21 | Shunpei Yamazaki | Manufacture of semi-amorphous semiconductor |
| JPS58122783A (en) * | 1982-01-14 | 1983-07-21 | Sanyo Electric Co Ltd | Photovoltaic device |
-
1984
- 1984-10-17 JP JP59216329A patent/JPH065780B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681981A (en) * | 1979-09-21 | 1981-07-04 | Messerschmitt Boelkow Blohm | Semiconductor forming element for converting light to electric energy |
| JPS5745980A (en) * | 1980-09-02 | 1982-03-16 | Mitsubishi Electric Corp | Amorphous solar battery and manufacture thereof |
| JPS5799729A (en) * | 1981-10-20 | 1982-06-21 | Shunpei Yamazaki | Manufacture of semi-amorphous semiconductor |
| JPS58122783A (en) * | 1982-01-14 | 1983-07-21 | Sanyo Electric Co Ltd | Photovoltaic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133578A (en) * | 1986-11-25 | 1988-06-06 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065780B2 (en) | 1994-01-19 |
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