JPS6196727A - Gas exhauster for cvd furnace - Google Patents

Gas exhauster for cvd furnace

Info

Publication number
JPS6196727A
JPS6196727A JP21809584A JP21809584A JPS6196727A JP S6196727 A JPS6196727 A JP S6196727A JP 21809584 A JP21809584 A JP 21809584A JP 21809584 A JP21809584 A JP 21809584A JP S6196727 A JPS6196727 A JP S6196727A
Authority
JP
Japan
Prior art keywords
piping
cvd
cvd furnace
gas
furnaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21809584A
Other languages
Japanese (ja)
Other versions
JPH0722124B2 (en
Inventor
Shoichi Takahashi
高橋　捷一
Tatsuji Suzuki
鈴木　辰二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP59218095A priority Critical patent/JPH0722124B2/en
Publication of JPS6196727A publication Critical patent/JPS6196727A/en
Publication of JPH0722124B2 publication Critical patent/JPH0722124B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To make the pipings for gas exhaust compact as well as the pressure fluctuation control in pipings easier by a method wherein a dilution piping is connected to a piping on the farthest downstream side of CVD furnaces while on the upstream side of a fan. CONSTITUTION:A dilution piping 8 to supply air for diluting H2 gas contained in exhaust gas from CVD furnaces to the concentration not exceeding the limit of exposition is connected to another piping 4 on the downstream of piping 3 common to CVD furnace 11-13 while on the upstream of a fan 5. In such a constitution of gas exhauster for CDV furnaces, the gross pressure fluctuation die to changeover of the CVD furnaces may be controlled by the dilution piping 8 connected to said piping 4. Through these procedures, the piping 4 supplied with air have only to be enlarged to make the overall unit compact as well as the pressure fluctuation control easier.

Description

【発明の詳細な説明】 ［発明の技術分！７］ 未発明は半導体の結晶気相成長等に用いられるＣＶ、Ｄ
炉の排ガス装置に関する。[Detailed description of the invention] [Technical portion of the invention! 7] Uninvented is CV, D used for crystal vapor phase growth of semiconductors, etc.
Concerning furnace exhaust gas equipment.

［発明の技術的背景］ ＣＶＤ炉においては１例えば減圧下で純化されたＨ２を
キャリアガスとしてシランまたはシランの塩素置換体等
の原料カスを加熱されたシリコンウェハとに導き、原料
ガスを水素５元することによりシリコンウェハ表面に例
えば単結晶シリコンを気相成長させることが行なわれて
いる。[Technical Background of the Invention] In a CVD furnace, raw material waste such as silane or a chlorinated product of silane is introduced into a heated silicon wafer using purified H2 under reduced pressure as a carrier gas, and the raw material gas is converted into hydrogen 5. For example, monocrystalline silicon is grown in a vapor phase on the surface of a silicon wafer by using a silicon wafer.

このようなＣＶＤ炉を第２図に示す、第２図にオイテ、
ＣＶＤ炉ｌ１．１２．１３は例えば３基並列に設置され
ており、その内部に鏡面研磨されたシリコンウェハが装
入される。これらＣＶＤ炉１１．１２．１３は交互にあ
るいは同時に稼動される。５ｉＣ１ａ等の原料ガスは、
Ｈ２ガスとともに供給配管２から例えばＣＶＤ炉１．内
に導入される。ＣＶＤ炉１炉内１内反応により生成した
ＭＣＩ等の反応ガス及びＨ２ガスは各ＣＶＤ炉１□、■
□、１３に共通の配管３挟び配管４を通過し、更にファ
ン５からスクラバー６に送られ。Such a CVD furnace is shown in Fig. 2.
For example, three CVD furnaces 11.12.13 are installed in parallel, and mirror-polished silicon wafers are charged inside. These CVD furnaces 11, 12, 13 are operated alternately or simultaneously. The raw material gas such as 5iC1a is
For example, from the supply pipe 2 together with H2 gas to the CVD furnace 1. be introduced within. Reaction gas such as MCI and H2 gas generated by the reaction inside the CVD furnace 1 are stored in each CVD furnace 1 □, ■
It passes through the pipe 3 and pipe 4 common to □ and 13, and is further sent from the fan 5 to the scrubber 6.

ＭＣＩを中和して排気されている。また、ＣＶＤ炉から
の排ガスにはＨ２カスが含まれているので、Ｈ２の爆発
限界以下の濃度に稀釈する必要がある。そのために空気
を供給する稀釈配管７は従来ＣＶＤ炉１１．１２．１３
の下流の共通の配管３のうち葭も下流側に接続されてい
た。MCI is neutralized and exhausted. Furthermore, since the exhaust gas from the CVD furnace contains H2 residue, it is necessary to dilute it to a concentration below the explosive limit of H2. For this purpose, the dilution pipe 7 that supplies air is used in the conventional CVD furnace 11.12.13.
Of the common piping 3 downstream of , the reeds were also connected to the downstream side.

［背景技術の問題点］ ＣＶＤ炉内は所定の圧力に設定して気相成長膜のｆ＆長
速度を一定とし、膜厚のバラツキや転位の発生を防止す
る必要がある。この条件はＣＶＤ炉の切り換え時にも満
たされていなければならず、このために稀釈配管７から
の空気の供給量を変化させる。ところが、第２図図示の
従来の排ガス装置でこの条件を満たそうとすると、ＣＶ
Ｄ炉の切り換えに伴う圧力変動の影響を極力避けるため
に、空気が供給される配管３及び配管４を大きなものと
せざるを得ない、また、このように大きな配管３及び４
を使用しても管内の圧力変動を調整することは困難であ
る。[Problems with Background Art] It is necessary to set a predetermined pressure in the CVD furnace to keep the f&length velocity of the vapor-phase grown film constant, and to prevent variations in film thickness and the occurrence of dislocations. This condition must also be met when switching over the CVD furnace, and for this purpose the amount of air supplied from the dilution pipe 7 is changed. However, when attempting to satisfy this condition with the conventional exhaust gas device shown in Figure 2, the CV
In order to avoid as much as possible the influence of pressure fluctuations caused by switching the D furnace, the pipes 3 and 4 through which air is supplied must be made large.
It is difficult to adjust pressure fluctuations within the pipe even if the pipe is used.

［発明の目的］ 本発明は上記事情に鑑みてなされたものであり、大規模
な配管を必要とせず、しかも管内の圧力の調整が容易な
ＣＶＤ炉用排ガス装置を提供しようとするものである。[Object of the Invention] The present invention has been made in view of the above circumstances, and aims to provide an exhaust gas device for a CVD furnace that does not require large-scale piping and can easily adjust the pressure inside the pipes. .

［発明の概要］ 本発明のＣＶＤ炉用排ガス装置は、並列に設けられた複
数のＣＶＤ炉の下流側にファン及びスクラバーを接続し
、ＣＶＤ炉の排カスを排気する装′置ニおいて、　各Ｃ
ＶＤ炉の最下流側でかつファンの上流側に稀釈配管を接
続することにより、排ガス用の配管をコンパクトにする
とともに管内の圧力変動の調整を容易にするものである
。[Summary of the Invention] The exhaust gas device for a CVD furnace of the present invention has a fan and a scrubber connected to the downstream side of a plurality of CVD furnaces installed in parallel, and a device for exhausting exhaust gas from the CVD furnace. Each C
By connecting the dilution pipe to the most downstream side of the VD furnace and the upstream side of the fan, the exhaust gas pipe can be made compact and pressure fluctuations within the pipe can be easily adjusted.

［発明の実施例］ 以下１本発明の実施例を第１図を参照して説明する。[Embodiments of the invention] An embodiment of the present invention will be described below with reference to FIG.

第１図ニオイー（、ＣＶＤ炉１８．１□、■、は例えば
３基韮列に設置されており、その内部に鏡面研磨された
シリコンウェハが装入される。これらＣＶＤ炉１１．１
２．１３は交互にあるいは同時に稼動される。５ｉＣＩ
４等の原料ガスは。For example, three CVD furnaces 18.1 □, ■ are installed in a row, and mirror-polished silicon wafers are charged inside these CVD furnaces 11.1.
2.13 may be operated alternately or simultaneously. 5iCI
The raw material gas for the 4th grade is.

Ｈ２ガスとともに供給配管２から例えばＣＶＤ炉１炉内
１内入される。ＣＶＤ炉１炉内１内反応により生成した
ＭＣＩ等の反応ガス及びＨ２ガスは各ＣＶＤ炉１１．１
２．１３に共通の配管３及び配管４を通過し、更にファ
ン５からスクラバー６に送られ、ＨＣｌを中和して排気
されている。また、ＣＶＤ炉からの排ガスに含まれてい
るＨ２カスを爆発限界以下の濃度に稀釈するために空気
）供給する稀釈配管８は各ＣＶＤ炉１１．１２．１３に
共通の配管３の下流側でかつファン５の上流側の配管４
に接続されている。For example, it is introduced into the furnace 1 of the CVD furnace 1 along with the H2 gas from the supply pipe 2. Reaction gas such as MCI and H2 gas generated by the reaction inside the CVD furnace 1 are stored in each CVD furnace 11.1.
2.13, it passes through the common piping 3 and piping 4, is further sent from the fan 5 to the scrubber 6, neutralizes HCl, and is exhausted. In addition, a dilution pipe 8 that supplies air to dilute H2 gas contained in the exhaust gas from the CVD furnace to a concentration below the explosion limit is located downstream of the pipe 3 that is common to each CVD furnace 11, 12, and 13. and piping 4 on the upstream side of the fan 5
It is connected to the.

このようなＣＶＤ炉用排ガス装置によれば、稀釈配管８
を配管４に接続しているので、ＣＶＤ炉の切り換えに伴
う圧力変動の総和を調整することになり、空気が供給さ
れる配管４のみ大きくすればよく、装置全体がコンパク
トになるとともに圧力変動の調整も容易となる。According to such an exhaust gas device for a CVD furnace, the dilution pipe 8
is connected to piping 4, so the total pressure fluctuation due to switching of the CVD furnace is adjusted, and only the piping 4 that supplies air needs to be enlarged, making the entire device compact and reducing pressure fluctuations. Adjustment is also easy.

［発明の効果］ 以上詳述した如く本発明のＣＶＤ炉用排ガス装置によれ
ば、装置全体をコンパクトにできるとともに管内の圧力
調整が容易となる等顕著な効果を奏するものである。[Effects of the Invention] As described in detail above, the exhaust gas device for a CVD furnace of the present invention has remarkable effects such as being able to make the entire device compact and making it easy to adjust the pressure inside the pipe.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例におけるＣＶＤ炉用排ガス装置
の系統図、第２図は従来のＣＶＤ炉用排ガス装置の系統
図である。 １１．１２．１３・・・ＣＶＤ炉、２川供給配管、３．
４・・・配管、５・・・ファン、６・・・スクラバー、
７．８・・・稀釈配管。FIG. 1 is a system diagram of a CVD furnace exhaust gas system according to an embodiment of the present invention, and FIG. 2 is a system diagram of a conventional CVD furnace exhaust gas system. 11.12.13...CVD furnace, 2 river supply piping, 3.
4... Piping, 5... Fan, 6... Scrubber,
7.8...Dilution piping.

Claims (1)

【特許請求の範囲】[Claims] 　並列に設けられた複数のＣＶＤ炉の下流側にファン及
びスクラバーを接続し、ＣＶＤ炉の排ガスを排気する装
置において、各ＣＶＤ炉の最下流側でかつファンの上流
側に稀釈配管を接続したことを特徴とするＣＶＤ炉用排
ガス装置。In a device that connects a fan and a scrubber to the downstream side of multiple CVD furnaces installed in parallel and exhausts the exhaust gas of the CVD furnace, a dilution pipe is connected to the most downstream side of each CVD furnace and upstream of the fan. An exhaust gas device for a CVD furnace characterized by:
JP59218095A 1984-10-17 1984-10-17 Exhaust gas device for CVD furnace Expired - Lifetime JPH0722124B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59218095A JPH0722124B2 (en) 1984-10-17 1984-10-17 Exhaust gas device for CVD furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59218095A JPH0722124B2 (en) 1984-10-17 1984-10-17 Exhaust gas device for CVD furnace

Publications (2)

Publication Number Publication Date
JPS6196727A true JPS6196727A (en) 1986-05-15
JPH0722124B2 JPH0722124B2 (en) 1995-03-08

Family

ID=16714549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59218095A Expired - Lifetime JPH0722124B2 (en) 1984-10-17 1984-10-17 Exhaust gas device for CVD furnace

Country Status (1)

Country Link
JP (1) JPH0722124B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911834A (en) * 1996-11-18 1999-06-15 Applied Materials, Inc. Gas delivery system
US6277199B1 (en) * 1999-01-19 2001-08-21 Applied Materials, Inc. Chamber design for modular manufacturing and flexible onsite servicing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534158A (en) * 1978-09-01 1980-03-10 Sony Corp Vacuum reaction apparatus
JPS5586112A (en) * 1978-12-25 1980-06-28 Toshiba Corp Vapor phase growth method for 3-5 group compound semiconductor
JPS55145045U (en) * 1979-04-04 1980-10-17
JPS5745337A (en) * 1980-08-29 1982-03-15 Fujitsu Ltd Vapor phase growth method
JPS59126626A (en) * 1983-01-07 1984-07-21 Nec Corp Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534158A (en) * 1978-09-01 1980-03-10 Sony Corp Vacuum reaction apparatus
JPS5586112A (en) * 1978-12-25 1980-06-28 Toshiba Corp Vapor phase growth method for 3-5 group compound semiconductor
JPS55145045U (en) * 1979-04-04 1980-10-17
JPS5745337A (en) * 1980-08-29 1982-03-15 Fujitsu Ltd Vapor phase growth method
JPS59126626A (en) * 1983-01-07 1984-07-21 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911834A (en) * 1996-11-18 1999-06-15 Applied Materials, Inc. Gas delivery system
US6277199B1 (en) * 1999-01-19 2001-08-21 Applied Materials, Inc. Chamber design for modular manufacturing and flexible onsite servicing

Also Published As

Publication number Publication date
JPH0722124B2 (en) 1995-03-08

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