JP2712617B2 - Thin film generator - Google Patents
Thin film generatorInfo
- Publication number
- JP2712617B2 JP2712617B2 JP1230974A JP23097489A JP2712617B2 JP 2712617 B2 JP2712617 B2 JP 2712617B2 JP 1230974 A JP1230974 A JP 1230974A JP 23097489 A JP23097489 A JP 23097489A JP 2712617 B2 JP2712617 B2 JP 2712617B2
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- gas
- exhaust gas
- thin film
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、超LSI等に於ける半導体、絶縁膜および金
属等の薄膜を生成する装置に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a thin film such as a semiconductor, an insulating film and a metal in a VLSI or the like.
従来の技術 現在、超LSI製造技術の中で特に重要なものの１つと
して、半導体や絶縁膜および金属等の薄膜生成技術があ
る。その方法として、例えば、減圧化学的気相成長法
（LPCVD法）、常圧化学的気相成長法（APCVD法）、プラ
ズマCVD法、スパッタ法等がある。しかし、これらの方
法で薄膜生成を行う為には、シランガス（SiH4）やジク
ロールシラン（SiCl2H2）等の特殊材料ガスや４弗化メ
タン等の半導体の加工に用いるガス（以下、これらを半
導体ガスと記す。）を原料として使用し、その残留ガス
の排気や処理方法には充分な配慮をしなければならな
い。2. Description of the Related Art At present, one of the most important VLSI manufacturing technologies is a technology for producing thin films of semiconductors, insulating films, and metals. Examples of the method include a low pressure chemical vapor deposition method (LPCVD method), a normal pressure chemical vapor deposition method (APCVD method), a plasma CVD method, and a sputtering method. However, in order to form a thin film by these methods, a special material gas such as silane gas (SiH 4 ) or dichlorosilane (SiCl 2 H 2 ), or a gas used for processing semiconductors such as methane tetrafluoride (hereinafter, referred to as a gas). These are referred to as semiconductor gases.) As a raw material, and sufficient consideration must be given to exhaustion and treatment of the residual gas.
ここでは、現在使用されている上記の薄膜生成装置の
中で、LPCVD装置について説明する。第３図は従来のLPC
VD装置に於いて、半導体ガスが導入されてから屋外へ排
気されるまでの系統図を示したものである。半導体ガス
として、多結晶シリコン薄膜の生成に必要な窒素２とシ
ラン１を用いている。被処理物を反応炉７内に挿入する
時は、配管11、12および反応炉内は排気ガス処理が不必
要である安全な窒素ガスで満たしておき、挿入後に反応
炉内はポンプ９により真空に排気される。その後、反応
炉をヒーター13で加熱した状態でシランガスを反応炉内
に導入して、被処理物の表面に所望の薄膜を生成する。
なお、ガスの導入、非導入はそれぞれバルブ３、４の開
閉で行われ、マスフローコントローラ５、６および圧力
調節器８で、所望の流量条件に調節している。薄膜形成
後、再びシランガスを遮断して窒素を導入し、反応炉内
を窒素で満たした後被処理物の取り出しを行う。Here, an LPCVD apparatus among the above-described thin film generating apparatuses currently used will be described. Fig. 3 shows a conventional LPC
FIG. 1 shows a system diagram from the introduction of a semiconductor gas to exhaust to the outside in a VD apparatus. As a semiconductor gas, nitrogen 2 and silane 1 necessary for forming a polycrystalline silicon thin film are used. When the object to be treated is inserted into the reactor 7, the pipes 11 and 12 and the interior of the reactor are filled with a safe nitrogen gas which does not require exhaust gas treatment. Exhausted. Thereafter, silane gas is introduced into the reaction furnace while the reaction furnace is heated by the heater 13, and a desired thin film is formed on the surface of the object to be processed.
The introduction and non-introduction of gas are performed by opening and closing the valves 3 and 4, respectively, and the mass flow controllers 5 and 6 and the pressure regulator 8 adjust the flow rate to a desired condition. After the formation of the thin film, the silane gas is shut off again, nitrogen is introduced, and the inside of the reaction furnace is filled with nitrogen.
ところで、上述の様な従来のLPCVD装置に代表される
薄膜生成装置においては、ポンプから排気されたガス
は、それがシランの様に排気ガス処理が必要なものであ
るか、窒素ガスの様に必要でないものかにかかわらず、
すべて排気ガス処理装置10を通して屋外へ排気されてい
る。By the way, in the thin film forming apparatus represented by the conventional LPCVD apparatus as described above, the gas exhausted from the pump is required to be subjected to an exhaust gas treatment like silane, or is a gas like nitrogen gas. Regardless of what you do n’t need,
All are exhausted to the outside through the exhaust gas treatment device 10.
発明が解決しようとする課題 しかしながら、従来の薄膜生成装置では、排気ガスの
成分が排気ガス処理が必要であるなしにかかわらず、処
理装置10を通して屋外へガスを排気しており、シランや
ジクロールシランとウェハ挿入時に巻き込んだ酸素ガス
が排気時に混ざり合って反応し、粉状の生成物となって
配管や排気ガス処理装置内に蓄積するので、排気ガス処
理装置の処理能力を低下させて寿命を縮めていた。ま
た、処理装置の寿命自体がよくわからない為に、まだ排
気ガス処理の効用があるのに処理装置のメンテナンスを
行ってしまったり、排気ガス処理の効用がなくなってし
まっているのに、充分に処理しきれなった有毒な成分を
多く含む排気ガスを屋外排気してしまっている事もあっ
た。さらに、処理排気系が１本しかないので、排気処理
装置および排管のメンテナンスの際には薄膜の生成がで
きなくなり、生産物が下落するので、薄膜生成に関係な
く排気系のメンテナンスが出来るシステムにする必要が
あった。However, in the conventional thin film forming apparatus, the gas is exhausted to the outside through the processing apparatus 10 regardless of whether the exhaust gas component requires the exhaust gas treatment or not. Silane and oxygen gas entrained when the wafer is inserted mix and react during exhaust, forming a powdery product that accumulates in pipes and exhaust gas treatment equipment. Was shrinking. In addition, because the life of the processing equipment itself is not well understood, the maintenance of the processing equipment has been performed even though the exhaust gas processing is still effective, and the exhaust gas processing has been no longer effective. In some cases, exhaust gases containing many toxic components were exhausted outdoors. Furthermore, since there is only one processing exhaust system, a thin film cannot be generated during maintenance of the exhaust processing device and the exhaust pipe, and the product falls, so that the exhaust system can be maintained regardless of the thin film generation. I needed to.
課題を解決するための手段 本発明は上述の課題を解決するため、薄膜生成用原料
ガスボンベより原料ガスを導入するガス配管システム
と、前記原料ガスを原料として薄膜を生成する炉システ
ムと、前記原料ガスの残留ガスを排気する為のポンプを
有する排気配管システムとで構成され、前記排気配管シ
ステムにおいて前記排気ガスが有毒ガスである場合には
排気ガス処理装置を通し、前記排気ガスが有毒ガスでな
い場合には前記排気ガス処理装置を通さずに自然排気す
る排気切り換え装置を備えた薄膜生成装置である。Means for Solving the Problems In order to solve the above problems, the present invention provides a gas piping system for introducing a raw material gas from a raw material gas cylinder for thin film generation, a furnace system for generating a thin film using the raw material gas as a raw material, An exhaust piping system having a pump for exhausting residual gas of the gas. In the exhaust piping system, when the exhaust gas is a toxic gas, the exhaust gas passes through an exhaust gas processing device, and the exhaust gas is not a toxic gas. In this case, the apparatus is a thin-film generation apparatus including an exhaust gas switching device that performs natural exhaust without passing through the exhaust gas treatment device.
作用 本発明の手段は次の様な作用を有する。ガス配管シス
テムによって導入されたシランガスやジクロールシラン
ガスなどの原料ガスを炉システムに導入して薄膜を生成
し、排気配管システムによって残留ガスを排気する様な
薄膜生成装置の排気ガス系において、排気ガスが排気処
理の必要な原料ガスを多く含んでいる様な場合の排気処
理装置を通す処理排気系と、そうでない場合の排気処理
を通さない排気系とを排気切り換え装置で切り換えを行
っているので、本発明の手段に依れば、例えば、シラン
やジクロールシランなどの原料ガスと、ウェハ挿入時に
巻き込んだ酸素ガスが排気時に混ざり合って反応し、粉
状の生成物となって配管や排気ガス処理装置内に蓄積し
て排気ガス処理装置の処理能力を早く低下させる事を防
止する事が出来る。Operation The means of the present invention has the following operation. In the exhaust gas system of a thin film generator, a raw material gas such as silane gas or dichlorosilane gas introduced by a gas piping system is introduced into a furnace system to form a thin film, and a residual gas is exhausted by an exhaust piping system. The exhaust switching system switches between the exhaust system that passes through the exhaust system when exhaust gas contains a large amount of source gas that needs exhaust processing and the exhaust system that does not pass exhaust gas when it does not. According to the means of the present invention, for example, a raw material gas such as silane or dichlorosilane, and an oxygen gas entrained at the time of wafer insertion are mixed and reacted at the time of evacuation to form a powdery product, which is used for piping and exhaust. It is possible to prevent the accumulation in the gas treatment device from rapidly decreasing the treatment capacity of the exhaust gas treatment device.
実施例 第１図は本発明の一実施例における排気系の切り換え
器を有する薄膜生成装置の系統図である。第１図を用い
てLPCVD装置による多結晶シリコン薄膜生成工程におけ
るガスの排気方法を説明する。第１図において第３図に
示すものと同一機能を有するものは同一番号を付した。
第１図に於いて、被処理物（シリコンウェハ等）を反応
炉７内に挿入する時は、配管11、12および反応炉７内は
窒素ガスで満たした状態にしておき、被処理物挿入後に
反応炉７内はポンプ９により真空に排気される。その
後、マスフローコントローラー５および圧力調節器８に
よってガス流量と圧力を所望の条件に設定したシランガ
スを反応炉７内に導入して薄膜を生成する。この時の分
圧計14aで監視されたシランガスの分圧値と排気系の切
り換えのシーケンスを第２図に示す。第２図に示してあ
る様に、予めシランガスの分圧値の排気ガス処理なしで
も安全と思われる安全値を設定しておき、シランガス導
入後にその値よりも高くなった時点で、排気ガス系切り
換え器15によって自然排気系18から処理排気系17に切り
換える。そして、薄膜生成が終了した時点でシランガス
が遮断されて窒素が導入されてくると、第２図に示す様
にシランガスの分圧値は徐々に低下し、ついに安全値を
下回る。この時、排気系は再び自然排気系18に戻り、排
気ガス処理装置は未使用の状態になる。その後の工程は
シランガスは導入されないので、排気は自然排気のまま
で行われる。従って、シランガスとウェハ挿入時に混入
した酸素ガスを含む窒素ガスは別の排気経路で排気され
るため、シランガスと酸素ガスが反応して出来る生成物
が排気ガス処理装置や配管内に蓄積して排気ガス処理装
置の処理能力を低下させる事がなくなる。このため、従
来方式よりも長い期間、処理装置の処理能力を維持出来
る。Embodiment FIG. 1 is a system diagram of a thin film forming apparatus having an exhaust system switch according to an embodiment of the present invention. A gas exhaust method in a polycrystalline silicon thin film forming step by an LPCVD apparatus will be described with reference to FIG. In FIG. 1, components having the same functions as those shown in FIG. 3 are given the same numbers.
In FIG. 1, when an object to be processed (a silicon wafer or the like) is inserted into the reaction furnace 7, the pipes 11, 12 and the interior of the reaction furnace 7 are filled with nitrogen gas, and the object to be processed is inserted. Thereafter, the inside of the reaction furnace 7 is evacuated by the pump 9 to a vacuum. Thereafter, a silane gas whose gas flow rate and pressure are set to desired conditions by the mass flow controller 5 and the pressure regulator 8 is introduced into the reaction furnace 7 to form a thin film. FIG. 2 shows a partial pressure value of the silane gas monitored by the partial pressure gauge 14a and a sequence of switching the exhaust system at this time. As shown in FIG. 2, a safety value which is considered to be safe even without the exhaust gas treatment of the partial pressure value of the silane gas is set in advance, and when the value becomes higher than the value after the introduction of the silane gas, the exhaust gas system is set. The switching unit 15 switches from the natural exhaust system 18 to the processing exhaust system 17. Then, when the silane gas is cut off and nitrogen is introduced at the time when the thin film formation is completed, the partial pressure value of the silane gas gradually decreases as shown in FIG. 2 and finally falls below the safe value. At this time, the exhaust system returns to the natural exhaust system 18 again, and the exhaust gas treatment device is in an unused state. Since silane gas is not introduced in the subsequent steps, the exhaust is performed with natural exhaust. Therefore, since the silane gas and the nitrogen gas containing the oxygen gas mixed when the wafer is inserted are exhausted through a separate exhaust path, the product formed by the reaction of the silane gas and the oxygen gas accumulates in the exhaust gas treatment device or piping and is exhausted. The processing capacity of the gas processing device is not reduced. For this reason, the processing capability of the processing apparatus can be maintained for a longer period than in the conventional method.
また、仮に排気ガス処理装置として第一図の10aを使
用していた時に、もし処理装置の寿命が来て効用が弱く
なったとしたら、屋外排気側分圧計14bで観測されたシ
ランガスの圧力値が通常の値よりも高くなって観測され
る。そこで、予め処理装置の寿命と判断出来る圧力値を
設定しておいて、その圧力値よりもシランガスの分圧値
が大きくなったら、排気ガス処理装置経路切り換え器16
によって、別の排気ガス処理装置10bに切り換える。こ
の様に排気ガス処理装置の効用を監視することにより、
排気ガス処理装置を排気処理の効用がなくなったと判断
されるまで有効に使う事が出来る。Also, if 10a in FIG. 1 was used as an exhaust gas treatment device, and if the life of the treatment device came and the utility became weak, the pressure value of the silane gas observed by the outdoor exhaust side partial pressure gauge 14b would be It is observed higher than normal value. Therefore, a pressure value that can be determined as the life of the processing apparatus is set in advance, and when the partial pressure value of the silane gas becomes larger than the pressure value, the exhaust gas processing apparatus path switch 16 is used.
Is switched to another exhaust gas processing device 10b. By monitoring the utility of the exhaust gas treatment device in this way,
The exhaust gas treatment device can be effectively used until it is determined that the exhaust treatment is no longer useful.
さらに、処理装置10bを使用している間に処理装置10a
の方はメンテナンスを行っておき、次に使用する順番が
回って来るまでに使用可能な状態にしておけば、薄膜生
成処理を行ないながら効用の無くなった処理装置のメン
テナンスが出来るので、メンテナンスによって割かれる
時間を短縮する事が出来る。Furthermore, while using the processing device 10b, the processing device 10a
If you perform maintenance on the equipment and make it usable before the next use order, you can perform maintenance on the processing equipment that has lost its utility while performing the thin film generation process. You can reduce the time taken.
発明の効果 以上の説明から明らかな様に、本発明によれば、従来
の装置よりも処理能力を長期間維持出来るために排気ガ
ス処理装置の浪費を防ぎ、また、処理装置の効用がなく
なるまで有効に使う事が今回のシステムで可能になり、
さらには、排気ガス処理系のガスラインを２本以上設け
ることによって、ある排気ガス処理系のラインを使用し
ている時に別のラインのメンテナンスが薄膜生成処理と
同時に行う事が可能になった。これらの事により、新し
いシステムは排気ガス処理装置のメンテナンスに費やす
コストを低減させ、メンテナンスに掛かる時間を短縮す
る事で生産性を向上させる事が出来た。Advantageous Effects of the Invention As is clear from the above description, according to the present invention, the processing capacity can be maintained for a longer time than the conventional apparatus, so that the exhaust gas processing apparatus is prevented from being wasted, and until the processing apparatus becomes useless. It is possible to use it effectively with this system,
Further, by providing two or more gas lines of the exhaust gas processing system, it is possible to perform maintenance of another line at the same time as the thin film generation processing while using a line of a certain exhaust gas processing system. As a result, the new system was able to reduce the cost spent on the maintenance of the exhaust gas treatment device and improve the productivity by reducing the time required for the maintenance.
第１図は本発明の一実施例における排気系の切り換え器
を有する薄膜生成装置の系統図、第２図はシラン分圧値
と排気系切り換えのシーケンスを示す図、第３図は従来
のLPCVD装置の排気系を示す概略図である。 １……シランボンベ、２……窒素ボンベ、3,4……スト
ップバルブ、5,6……マスフローコントローラー、７…
…反応炉、８……圧力調節器、９……排気用ポンプ、1
0,10a,10b……排気ガス処理装置、11……原料ガス導入
配管、12……排気配管、13……ヒーター、14a,14b……
有毒ガス監視用分圧器、15……排気ガス系切り換え器、
16……排気ガス処理装置経路切り換え器、17……処理排
気系配管、18……自然排気系配管。FIG. 1 is a system diagram of a thin film forming apparatus having an exhaust system switching device according to one embodiment of the present invention, FIG. 2 is a diagram showing a silane partial pressure value and a sequence of exhaust system switching, and FIG. It is a schematic diagram showing an exhaust system of an apparatus. 1 ... silane cylinder, 2 ... nitrogen cylinder, 3, 4 ... stop valve, 5, 6 ... mass flow controller, 7 ...
... reactor, 8 ... pressure regulator, 9 ... exhaust pump, 1
0,10a, 10b …… Exhaust gas treatment equipment, 11 …… Source gas introduction pipe, 12 …… Exhaust pipe, 13 …… Heater, 14a, 14b ……
Toxic gas monitoring voltage divider, 15… Exhaust gas system switcher,
16: Exhaust gas treatment device path switcher, 17: Treatment exhaust system piping, 18: Natural exhaust system piping.
Claims (3)
導入するガス配管システムと、前記原料ガスを原料とし
て薄膜を生成する炉システムと、前記原料ガスの残留ガ
スを排気する為のポンプを有する排気配管システムとで
構成され、前記排気配管システムにおいて前記排気ガス
が有毒ガスである場合には排気ガス処理装置を通し、前
記排気ガスが有毒ガスでない場合には前記排気ガス処理
装置を通さずに自然排気する排気切り換え装置を備えた
薄膜生成装置。1. A gas piping system for introducing a source gas from a source gas cylinder for producing a thin film, a furnace system for generating a thin film using the source gas as a source, and an exhaust having a pump for exhausting residual gas of the source gas. A piping system, wherein when the exhaust gas in the exhaust piping system is a toxic gas, the exhaust gas is passed through an exhaust gas processing device, and when the exhaust gas is not a toxic gas, the exhaust gas is not passed through the exhaust gas processing device. A thin film forming apparatus provided with an exhaust switching device for exhausting.
成分の圧力を検知する分圧計を備え、前記有毒ガスの分
圧が指定値以上では排気ガス処理装置を通し指定値以下
では自然排気をするように前記分圧計と排気切り換え装
置が連動して排気ガスの成分に応じた排気経路を選択す
ることを特徴とする特許請求の範囲第１項記載の薄膜生
成装置。2. A partial pressure gauge for detecting a pressure of a toxic gas component is provided in an exhaust pipe of the exhaust piping system. When the partial pressure of the toxic gas is higher than a specified value, natural gas is exhausted through an exhaust gas treatment device when the partial pressure is lower than a specified value. 2. The thin film generating apparatus according to claim 1, wherein the partial pressure gauge and the exhaust gas switching device work in conjunction to select an exhaust path according to a component of the exhaust gas.
処理装置を通す排気経路を２本以上と、その排気経路を
切り換える排気ガス処理装置経路切り換え器を有し、前
記排気ガス処理装置の屋外排気側に有毒ガス成分の圧力
を感知する分圧計を備え、その分圧値の変動によって現
在使用中である排気ガス処理装置の効用がなくなったと
判断された場合は、前記排気ガス処理経路切り換え器に
よって他の排気ガス処理装置の経路に切り換えることを
特徴とする特許請求の範囲第１項記載の薄膜生成装置。3. The exhaust pipe system according to claim 1, further comprising at least two exhaust paths through which the exhaust gas processing device passes, and an exhaust gas processing device path switch for switching the exhaust path. A pressure gauge that senses the pressure of the toxic gas component, and when it is determined that the exhaust gas processing device currently in use is no longer effective due to a change in the partial pressure value, the exhaust gas processing path switching device performs another operation. 2. The thin film generating apparatus according to claim 1, wherein the path is switched to the path of the exhaust gas processing apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1230974A JP2712617B2 (en) | 1989-09-06 | 1989-09-06 | Thin film generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1230974A JP2712617B2 (en) | 1989-09-06 | 1989-09-06 | Thin film generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0394067A JPH0394067A (en) | 1991-04-18 |
| JP2712617B2 true JP2712617B2 (en) | 1998-02-16 |
Family
ID=16916243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1230974A Expired - Fee Related JP2712617B2 (en) | 1989-09-06 | 1989-09-06 | Thin film generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2712617B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2932059A1 (en) * | 2008-05-28 | 2009-12-04 | Air Liquide | PLASMA TREATMENT SYSTEM OF FLUID OR MIXTURE OF FLUIDS |
-
1989
- 1989-09-06 JP JP1230974A patent/JP2712617B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0394067A (en) | 1991-04-18 |
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| LAPS | Cancellation because of no payment of annual fees |