JPS6194319A - Evaporator of volatile matter - Google Patents

Evaporator of volatile matter

Info

Publication number
JPS6194319A
JPS6194319A JP21664284A JP21664284A JPS6194319A JP S6194319 A JPS6194319 A JP S6194319A JP 21664284 A JP21664284 A JP 21664284A JP 21664284 A JP21664284 A JP 21664284A JP S6194319 A JPS6194319 A JP S6194319A
Authority
JP
Japan
Prior art keywords
gas
valve
volatile substance
pipe
gas pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21664284A
Other languages
Japanese (ja)
Inventor
Motoji Morizaki
森崎 元司
Nobuyasu Hase
長谷 亘康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21664284A priority Critical patent/JPS6194319A/en
Publication of JPS6194319A publication Critical patent/JPS6194319A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02543Phosphides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To make the exchange of an evaporator easy by connecting a bypass pipe which has a valve at the center outside of the valves of two gas pipes which are connected to other equipment in the evaporator of a volatile matter used for epitaxial growth, CVD, etc. CONSTITUTION:An evaporator used for epitaxial growth, CVD, etc. has a container 4 filled with a volatile matter 3 and a gas pipe 1 which has a valve 2 outside and is inserted in the volatile matter 3 and a gas pipe 5 which has also a valve 6 outside and is inserted in the vapor are attached to the container 4. A carrier gas supply pipe 9 at the side of the valve 2 and a vapor supply pipe 10 at the side of the valve 6 are connected with joints 7 and 8. In this case, a bypass pipe 21 which has a valve 22 at the center is provided between the gas pipes 1 and 5 outside of the valves 2 and 6. If the valves 2, 6 are closed and the valve 22 is opened, a carrier gas flows in the pipes 1 and 5 and no vapor stays in these pipes.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、気相エピタキシャル成長および化学輸送成長
法(CV D ; Chemical VILpor 
Deposition)等に原料ガスとして用いられる
揮発性物質の気化装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to vapor phase epitaxial growth and chemical transport growth (CVD).
The present invention relates to a device for vaporizing volatile substances used as raw material gas for deposition, etc.

従来例の構成とその問題点 化合物半導体の気相エピタキシャル成長(例えばハライ
ド気相エピタキシャル成長法や有機金属熱分解法)やc
vn法による電極形成(例えばモリブデン電極の形成)
等、化合物半導体デバイスやシリコン半導体装置の製造
プロセスにおいて、揮発性物質を気化させて原料ガスと
して用いている。
Conventional configurations and their problems Vapor phase epitaxial growth of compound semiconductors (e.g. halide vapor phase epitaxial growth method and organometallic pyrolysis method)
Electrode formation by the vn method (for example, formation of molybdenum electrodes)
In the manufacturing process of compound semiconductor devices and silicon semiconductor devices, volatile substances are vaporized and used as raw material gas.

以下に従来の揮発性物質の気化装置について第1図に基
づいて説明する。1はキャリアガス流入ロ側ガス管、2
はキャリアガス入口側バルブ、3は揮発性物質、4は揮
発性物質の入った容器、6はキャリアガス流出口側ガス
管、6はキャリアガス出口側バルブ、7および8は他の
ガス管との継手部である。第1図のように従来の揮発性
物質の気化装置は、継手部7,8で気相成長装置等のガ
ス管9,1oに接続し、キャリアガスをキャリアガス流
入口側ガス管1側からバルブ2を通って揮発性物質の入
った室4に送り込み、揮発性物質3を気化させて、バル
ブらを通ってキャリアガス流出口側ガス管から装置へ流
出させる構造となっていた。
A conventional volatile substance vaporization device will be described below with reference to FIG. 1 is a carrier gas inflow bottom side gas pipe, 2
is a valve on the carrier gas inlet side, 3 is a volatile substance, 4 is a container containing the volatile substance, 6 is a gas pipe on the carrier gas outlet side, 6 is a valve on the carrier gas outlet side, 7 and 8 are connected to other gas pipes. This is the joint part. As shown in Fig. 1, the conventional volatile substance vaporization apparatus connects gas pipes 9 and 1o of a vapor phase growth apparatus etc. with joints 7 and 8, and supplies carrier gas from the gas pipe 1 side on the carrier gas inlet side. The carrier gas is fed into a chamber 4 containing a volatile substance through a valve 2, vaporizes the volatile substance 3, and then flows out through the valve and the like from a gas pipe on the carrier gas outlet side to the apparatus.

ところがこのような構造では、揮発性物質の供給終了後
、ガス管の12.13  の部分に揮発性物質の気化ガ
スを含んだキャリアガスが残留してしまう。このため、
揮発性物質の気化装置を交換する場合、継手部7および
8を取ジはずしたとき、ガス管に残留していた揮発性物
質の気化ガスが回れ出してしまう。これは作業者に11
シ好ましくないことでちり、まだ揮発性物質が有機金属
であると、有機金属は空気(酸素)と激しく反応するた
め自然発火し、たいへん危険であった。また、揮発性物
質がガス管内に残るため、管壁に付着して管内を汚染す
る原因となったり、混晶成長の原料ガスとして使用する
場合だと混晶比を変えてしまう原因にもなった。したが
って、混晶の組成制御や不純物ドーピング量の制御、ま
た多層薄膜成長の場合の界面急峻性制御等を困難なもの
にしていた。
However, in such a structure, after the supply of the volatile substance is finished, the carrier gas containing the vaporized gas of the volatile substance remains in the portion 12.13 of the gas pipe. For this reason,
When replacing the volatile substance vaporizer, when the joints 7 and 8 are removed, the vaporized gas remaining in the gas pipe leaks out. This gives the worker 11
However, if the volatile substance was an organic metal, it would react violently with the air (oxygen) and spontaneously combust, making it very dangerous. In addition, since volatile substances remain in the gas pipe, they may adhere to the pipe wall and contaminate the pipe interior, or if used as a raw material gas for mixed crystal growth, they may change the mixed crystal ratio. Ta. Therefore, it has been difficult to control the composition of the mixed crystal, the amount of impurity doping, and the steepness of the interface when growing a multilayer thin film.

そこで、成長装置等の側の配管で、第2図のようにガス
管9と10を直結するバイパス管14を設け、揮発性物
質の気化終了後、バイパス管14にキャリアガスを流し
て残留ガスを除去する方法もとられたが、ガス管の一部
16.16にはキャリアガスが流れないため残留ガスを
完全に除去するには相当の長い時間を要した。また、真
空ポンプ等でガス管内の残留ガスを排気する方法もある
が、装置が複雑となり、手間も要する。更にポンプで使
用している油の蒸気がガス管内に入り込む可能性もあり
、好ましくない。
Therefore, as shown in Fig. 2, a bypass pipe 14 is provided to directly connect the gas pipes 9 and 10 in the piping on the side of the growth apparatus, etc. After the volatile substances have been vaporized, the carrier gas is flowed through the bypass pipe 14 to remove the residual gas. A method of removing the residual gas was also taken, but it took a considerable amount of time to completely remove the residual gas because the carrier gas did not flow through the part 16.16 of the gas pipe. There is also a method of exhausting the residual gas in the gas pipe using a vacuum pump or the like, but this method requires complicated equipment and time. Furthermore, there is a possibility that vapor from the oil used in the pump will enter the gas pipe, which is not desirable.

発明の目的 本発明は、上記従来の問題点を解消するものであυ、キ
ャリアガス流入ロ側ガス管およびキャリアガメ流出ロ側
ガス管内に、揮発性物質の気化ガスを残留させないよう
にし、または残留ガスをかんたんに取り除くことによシ
、ガス管内を常にクリーンに保つとともに、揮発性物質
の気化装置の一交換を安全に行なえる揮発性物質の気化
装置を提供することを目的とする。
OBJECT OF THE INVENTION The present invention solves the above-mentioned conventional problems by preventing vaporized gases of volatile substances from remaining in the carrier gas inflow bottom gas pipe and the carrier gas outflow bottom gas pipe, or To provide a volatile substance vaporizer that can keep the inside of a gas pipe clean at all times by easily removing residual gas, and can safely replace the volatile substance vaporizer.

発明の構成 本発明は、ガス流の入口側と出口側とにバルブを備え、
他の装置のガス配管に接続して用いる揮発性物質の気化
装置において、ガス流の入口側のバルブプとガス流入口
側のガス管継手部との間のガス管と、ガス流の出口側の
バルブとガス流出口側のガス管継手部との間のガス管と
を直結したバイパスガス経路を備え、かつ前記バイパス
ガス経路の途中にバルブを備えていることを特徴とする
揮発性物質の気化装置で゛ある。
Structure of the Invention The present invention includes valves on the inlet side and the outlet side of the gas flow,
In a volatile substance vaporizer that is connected to the gas piping of another device, the gas pipe between the valve on the gas flow inlet side and the gas pipe joint on the gas inlet side, and the gas pipe on the gas flow outlet side. Vaporization of volatile substances characterized by comprising a bypass gas path that directly connects a gas pipe between a valve and a gas pipe joint on the gas outlet side, and further comprising a valve in the middle of the bypass gas path. It is a device.

また、ガス流の入口側と出口側とにバルブを備え、他の
装置のガス配管に接続して用いる揮発性物質の気化装置
において、ガス流の入口側と出口側のバルブがガス流を
2方向に切り換えることのできる2方向切換バルブであ
り、それぞれの1方向は揮発性物質の入った容器と接続
され、他方向は、互いに直結されてバイパスガス経路を
形成していることを特徴とする揮発性物質の気化装置で
ある。
In addition, in a volatile substance vaporization device that is equipped with valves on the inlet and outlet sides of the gas flow and is used by connecting to the gas piping of another device, the valves on the inlet and outlet sides of the gas flow divide the gas flow into two. A two-way switching valve that can be switched in one direction, and one direction of each is connected to a container containing a volatile substance, and the other directions are directly connected to each other to form a bypass gas path. This is a device for vaporizing volatile substances.

また、ガス流の入口側と出口側とにバルブをSmえ、他
の装置のガス配管に接続して用いる揮発性物質の気化装
置において、ガス流の人口側もしくは出口側のどちらか
一方のバルブプが、ガス流を2方向に切や換えることの
できる2方向切換バルブであり、そのバルブプの1方向
は揮発性物質の入・った容器と接続され、他方向は前記
2方向切換バルブでないバルブとガス管継手部との間の
ガス経路と直結され、バイパスガス経路を形成している
ことを特徴とする揮発性物質の気化装置である。
In addition, in a volatile substance vaporization device that is used by installing a valve on the inlet side and the outlet side of the gas flow and connecting it to the gas piping of another device, it is also possible to install a valve on either the intake side or the outlet side of the gas flow. is a two-way valve capable of switching gas flow in two directions, one direction of which is connected to a container containing a volatile substance, and the other direction is connected to a valve other than the two-way valve. This volatile substance vaporization device is characterized in that it is directly connected to a gas path between the gas pipe joint and the gas pipe joint part, forming a bypass gas path.

実施例の説明 本発明による揮発性物質の気化装置の具体的な実施例を
第3図に示す。第3図において第1図と同一部分には同
一番号を付す。21がキャリアガス流入ロ側ガス管1と
キャリアガス流出口側ガス管6とを直結するバイパス用
のガス経路としてのガス管であり、このガス管21には
キャリアガスを流したり止めたりするバルブ22が備っ
ている。
DESCRIPTION OF EMBODIMENTS A specific embodiment of the volatile substance vaporization apparatus according to the present invention is shown in FIG. In FIG. 3, the same parts as in FIG. 1 are given the same numbers. Reference numeral 21 denotes a gas pipe as a bypass gas path that directly connects the carrier gas inflow side gas pipe 1 and the carrier gas outlet side gas pipe 6, and this gas pipe 21 is provided with a valve for turning on and off the flow of the carrier gas. There are 22.

上記のような構造の気化装置であれば、揮発性物質の供
給終了時にキャリアガス入口側バルブ2およびキャリア
ガス出口側バルブ6を閉じ、バルブ22を開くことによ
って、キャリアガスをガス管21に流す。したがってガ
ス管1,6にはキャリアガスが流れるため、揮発性物質
の気化ガスは残留しない。このため、気化装置を交換す
る際、継手部7,8をはずしても揮発性物質が漏れ出る
ことはなく、安全に作業ができ、また、ガス管内に残留
ガスが残らないため、ガス管内を常にクリーンに保つこ
とができる。
If the vaporizer has the above structure, the carrier gas inlet valve 2 and the carrier gas outlet valve 6 are closed and the valve 22 is opened when the supply of volatile substances is finished, thereby allowing the carrier gas to flow into the gas pipe 21. . Therefore, since the carrier gas flows through the gas pipes 1 and 6, no vaporized gas of volatile substances remains. Therefore, when replacing the vaporizer, even if the joints 7 and 8 are removed, volatile substances will not leak out and the work can be carried out safely.Also, since no residual gas remains in the gas pipe, the inside of the gas pipe can be cleaned. Can be kept clean at all times.

本発明の他の実施例を第4図に示す。第4図において第
1図および第3図と同一部分には同一番号を示す。第3
図と異なる点は、第4図においてキャリアガス入ロ側バ
lレブ31およびキャリアがス呂ロ側バルブ32をガス
流を2方向に切換えられる特殊なバルブ(第6図に基本
的な概略構造を示す。)に変え、これらの2方向切換バ
ルブのそれぞれ一方向は揮発性物質の入った容器4へ接
続され、他方向は互いに直結する形でバイパス用のガス
経路21を備えていることである。この2方向切換バル
ブの概略構造を第6図に示す。このバルブは操作するこ
とにより、中の弁50が上下に動く。この弁60の動き
によって入口51から入ったガスは出口52もしくは出
口53のどちらか一方へ導かれて出ていく。この図の場
合、例えば弁50が下にあるとガスは出口52から排出
される。
Another embodiment of the invention is shown in FIG. In FIG. 4, the same parts as in FIGS. 1 and 3 are designated by the same numbers. Third
The difference from the figure is that in Figure 4, the carrier gas input valve 31 and the carrier gas input valve 32 are special valves that can switch the gas flow in two directions (Figure 6 shows the basic schematic structure). ), one direction of each of these two-way switching valves is connected to the container 4 containing the volatile substance, and the other direction is provided with a bypass gas path 21 that is directly connected to each other. be. A schematic structure of this two-way switching valve is shown in FIG. By operating this valve, the valve 50 inside moves up and down. Due to the movement of this valve 60, gas entering from the inlet 51 is guided to either the outlet 52 or the outlet 53 and exits. In this figure, for example, when valve 50 is down, gas is exhausted through outlet 52.

そして弁6oが上が9点線の部分にくるとガスは出口5
3から排出される。したがってこのような2方向切換バ
ルブ31および32の操作により、キャリアガスを揮発
性物質の入った容器4に送り込んだり、バイパス用のガ
ス経路21へ送ったりすることができるため、第3図の
実施例に比べ、バルブ操作が少なくて済むとともに、揮
発性物質の気化ガスがガス管1および5に残留しない。
Then, when the top of the valve 6o reaches the 9-dotted line, the gas flows out from the outlet 5.
It is discharged from 3. Therefore, by operating the two-way switching valves 31 and 32, the carrier gas can be sent to the container 4 containing the volatile substance or to the bypass gas path 21. Compared to the example, fewer valve operations are required, and vaporized gas of volatile substances does not remain in the gas pipes 1 and 5.

したがって第3図の実施例と同じ効果が得られる。Therefore, the same effect as the embodiment shown in FIG. 3 can be obtained.

また、2方向切換バルブはキャリアガス入口側もしくは
出口側のどちらか一方だけ用い、他方は通常のバルブプ
を用いてもよい。その−例を第6図に示す。この図の場
合は、キャリアガス入口側に2方向切換バルブ61を用
いた場合である。この図のように、2方向切換バルブ6
1の一方向は、揮発性物質の入った容器4と接続され、
他方向はキャリアガス出口側のバルブ6とガス管継手部
8との間のキャリアガス流出口側ガス管5と直結され、
バイパス用のガス経路21を形成している。
Further, the two-way switching valve may be used only on either the carrier gas inlet side or the outlet side, and a normal valve may be used on the other side. An example is shown in FIG. This figure shows a case where a two-way switching valve 61 is used on the carrier gas inlet side. As shown in this figure, the two-way switching valve 6
One side of 1 is connected to a container 4 containing a volatile substance,
The other direction is directly connected to the gas pipe 5 on the carrier gas outlet side between the valve 6 on the carrier gas outlet side and the gas pipe joint part 8,
A gas path 21 for bypass is formed.

このような構造でも第3図の実施例と同じ効果が得られ
ることはいうまでもない。またこの第6図とは逆にキャ
リアガス出口側に用いられ、通常のパlレプを入口側に
用いた場合も、明らかに同じ効果が得られる。
It goes without saying that even with such a structure, the same effects as the embodiment shown in FIG. 3 can be obtained. Also, contrary to FIG. 6, the same effect can clearly be obtained even if the carrier gas is used on the outlet side and a normal PALEP is used on the inlet side.

なおこれまでのバルブプ2,6,22,31.32゜6
1は手動式でも電磁バルブでも空気圧作動型バルブであ
ってもかまわない。
In addition, the previous valves 2, 6, 22, 31.32゜6
1 may be a manual valve, a solenoid valve, or a pneumatically operated valve.

第7図に、揮発性物質として有機金属、トリエチルイン
ジウム(TRI)を用いて化合物半導体InPをエビタ
キシャlし成長させる有機金属熱分解法(MOCVD)
に本発明を用いた場合を示す。なお、第1図および第3
図と同一部分には同一番号を付す。
Figure 7 shows the metal organic pyrolysis method (MOCVD) in which the compound semiconductor InP is epitaxially grown using an organic metal, triethyl indium (TRI) as a volatile substance.
A case in which the present invention is used is shown below. In addition, Figures 1 and 3
Parts that are the same as those in the figure are given the same numbers.

InP を成長する前にキャリアガス(H2)を水素ポ
ンベ41からマスフロー42で流量制御し、ガス管9,
1.21.5.10および43を通して排ガス処理装置
44へ流す。これは、TRIへ送り込むキャリアガスの
流量をあらかじめコントローlししておくためである。
Before growing InP, the flow rate of the carrier gas (H2) is controlled from the hydrogen pump 41 using the mass flow 42, and the gas pipe 9,
1.21.5.10 and 43 to the exhaust gas treatment device 44. This is because the flow rate of the carrier gas sent to the TRI is controlled in advance.

InP成長開始とともにキャリアガスをバルブ2,6を
開、バルブプ22を閉にすることにより、TEIの気化
装置46へ送シ込み、TEI  の気化させる。また同
時に、バルブ46を閉、バルブプ47を開にすることに
より、TEIの気化ガスを反応炉48に送シ込み、I 
nPをエビタキンヤル成長させる。成長終了時にはバル
ブ46を開、47を閉にし、またバルブ2,6を閉、2
2を開にすることによって、ガス管内のTRI の残留
ガスをキャリアガスによって排ガス処理装置44へ流し
てしまう。したがってガス管9.1.21.5,10内
にTIEI O)気化力y、は残らない。なお、49は
Pの原料ガスであるPH3(ホヌフィンボンベ)70は
基板、71はサセ7’タフ2は加熱装置、73は減圧成
長用の真空ポンプである。
At the start of InP growth, by opening the valves 2 and 6 and closing the valve 22, the carrier gas is sent to the TEI vaporizer 46 and TEI is vaporized. At the same time, by closing the valve 46 and opening the valve 47, vaporized TEI gas is sent to the reactor 48, and the I
Grow nP with Evitakin. When the growth is finished, valve 46 is opened and valve 47 is closed, and valves 2 and 6 are closed.
By opening 2, the residual TRI gas in the gas pipe is caused to flow to the exhaust gas treatment device 44 by the carrier gas. Therefore, no vaporizing force y remains in the gas pipes 9.1.21.5, 10. In addition, 49 is a PH3 (honufin cylinder) which is a raw material gas for P, 70 is a substrate, 71 is a sasse 7' tough 2 is a heating device, and 73 is a vacuum pump for reduced pressure growth.

以上のような実施例によれば、TEI の気化装置の交
換は、かんたんに安全に行なえるとともにガス管の汚染
が防止される。なお、実施例としてTRI を用いたM
OCVD法による場合についてのみ説明しだが、それに
限らず、化合物半導体のハフイド気相エピタキシャル成
長に原料ガスとして用いられるAsa15P a41 
A S B rs等のv族ハI:I ’y’ 7化物や
、CVD法による電極形成に用いられるMOCJ5など
の気化装置にも本発明を適応できる。
According to the embodiments described above, the TEI vaporizer can be replaced easily and safely, and contamination of the gas pipe can be prevented. In addition, as an example, M using TRI
Although only the case using the OCVD method will be explained, it is not limited thereto.
The present invention can also be applied to vaporizers such as V-group I:I'y' heptides such as AS Brs, and MOCJ5 used for electrode formation by CVD method.

発明の効果 本発明にかかる揮発性物質の気化装置は、キャリアガス
流入口側ガス管とキャリアガス流出口側ガス管とを直結
するバイパス用のガス経路と、キャリアガスを揮発性物
質の入った容器か、バイパスガス経路かのどちらかに流
すことを操作する2方向切換バルブを備えることによジ
、キャリアガス流入口側ガス管およびキャリアガス流出
口側ガス管内に揮発性物質の気化ガスを残留させること
がなくなる。このだめ、揮発性物質の気化装置を安全に
簡単に交換できる。また、残留ガスのガス管壁付着によ
るガス管内の汚染を防ぎ、更に混晶制御、不純物ドーピ
ング量制御、多層源1閥成長の場合の界面急峻性制御を
精密に行なえ、その実用的な効果は非常に大なるもので
ある。
Effects of the Invention The volatile substance vaporization device according to the present invention has a bypass gas path that directly connects a carrier gas inlet side gas pipe and a carrier gas outlet side gas pipe, and By providing a two-way switching valve that allows the gas to flow into either the container or the bypass gas path, vaporized gas of volatile substances can be introduced into the carrier gas inlet side gas pipe and the carrier gas outlet side gas pipe. There will be no residue left behind. This allows the volatile substance vaporizer to be replaced safely and easily. In addition, it prevents contamination inside the gas pipe due to the adhesion of residual gas to the gas pipe wall, and also allows precise control of mixed crystals, impurity doping amount, and interface steepness in the case of multi-layer single-source growth. It is very large.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の揮発性物質の気化装置の模式図、第2図
は従来の揮発性物質の気化装置の成長装置側配管への接
続図、第3図は本発明の一実施例である揮発性物質の気
化装置の模式図、第4図は本発明の第2の実施例である
揮発性物質の気化装置の模式図、第6図はガス流を2方
向に切り換えら′れるバルブの構造模式図、第6図は本
発明の第3の実施例である揮発性物質の気化装置の模式
図、第7図は本発明の一実施例である揮発性物質の気化
装置をMOCVD装置に接続した場合のガス配管系統概
略図である。 1・・・・・・ガス流入口側ガス管、2・・・・・・ガ
ス流入口側バルブ、3・・・・・・揮発性物質、4・・
・・・・容器、5・・・・・・ガス流出口側ガス管、6
・・・・・・ガス流出口側バルブ、7,8・・・・・・
 ガス管継手部、21・・・・・・バイパスガス経路、
22・・・・・・バルブ、31,32.61・・・・・
2方向切換バルブ。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図 第3図 21?? 第4図 第5図 ↓
Fig. 1 is a schematic diagram of a conventional volatile substance vaporization apparatus, Fig. 2 is a connection diagram of the conventional volatile substance vaporization apparatus to the growth apparatus side piping, and Fig. 3 is an embodiment of the present invention. Fig. 4 is a schematic diagram of a volatile substance vaporization apparatus according to a second embodiment of the present invention, and Fig. 6 is a schematic diagram of a volatile substance vaporization apparatus according to a second embodiment of the present invention. Fig. 6 is a schematic structural diagram of a volatile substance vaporization apparatus according to a third embodiment of the present invention, and Fig. 7 is a schematic diagram of a volatile substance vaporization apparatus according to an embodiment of the present invention in an MOCVD apparatus. It is a schematic diagram of a gas piping system when connected. 1... Gas inlet side gas pipe, 2... Gas inlet side valve, 3... Volatile substance, 4...
...Container, 5...Gas outlet side gas pipe, 6
...Gas outlet side valve, 7, 8...
Gas pipe joint part, 21... Bypass gas route,
22... Valve, 31, 32.61...
Two-way switching valve. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 21? ? Figure 4 Figure 5 ↓

Claims (3)

【特許請求の範囲】[Claims] (1)ガス流の入口側と出口側とにバルブを備え、他の
装置のガス配管に接続して用いる揮発性物質の気化装置
において、前記ガス流の入口側のバルブとガス流入口側
のガス管継手部との間のガス管と、前記ガス流の出口側
のバルブとガス流出口側のガス管継手部との間のガス管
とを直結したバイパスガス経路を備え、かつ前記バイパ
スガス経路の途中にバルブを備えていることを特徴とす
る揮発性物質の気化装置。
(1) In a volatile substance vaporization device that is equipped with a valve on the inlet side and an outlet side of the gas flow and is used by connecting to the gas piping of another device, the valve on the inlet side of the gas flow and the valve on the gas inlet side are used. a bypass gas path that directly connects a gas pipe between the gas pipe joint and a gas pipe between the valve on the outlet side of the gas flow and the gas pipe joint on the gas outlet side; A volatile substance vaporization device characterized by having a valve in the middle of a path.
(2)ガス流の入口側と出口側とにバルブを備え他の装
置のガス配管に接続して用いる揮発性物質の気化装置に
おいて、前記ガス流の入口側と出口側のバルブが、ガス
流を2方向に切り換えることのできる2方向切換バルブ
であり、それぞれの1方向は前記揮発性物質の入った容
器と接続され、他方向は互いに直結されてバイパスガス
経路を形成していることを特徴とする揮発性物質の気化
装置。
(2) In a volatile substance vaporization device that is provided with valves on the inlet and outlet sides of the gas flow and is used by being connected to the gas piping of another device, the valves on the inlet and outlet sides of the gas flow A two-way switching valve capable of switching between two directions, characterized in that one direction of each is connected to the container containing the volatile substance, and the other directions are directly connected to each other to form a bypass gas path. Vaporization equipment for volatile substances.
(3)ガス流の入口側と出口側とにバルブを備え、他の
装置のガス配管に接続して用いる揮発性物質の気化装置
において、前記ガス流の入口側もしくは出口側のどちら
か一方のバルブが、ガス流を2方向に切り換えることの
できる2方向切換バルブであり、この2方向切換バルブ
の1方向は前記揮発性物質の入った容器と接続され、他
方向は前記2方向切換バルブでないバルブとガス管継手
部との間のガス経路と直結され、バイパスガス経路を形
成していることを特徴とする揮発性物質の気化装置。
(3) In a volatile substance vaporization device that is equipped with a valve on the inlet side and an outlet side of the gas flow and is used by connecting to the gas piping of another device, one of the gas flow inlet and outlet sides is connected to the gas piping of another device. the valve is a two-way switching valve capable of switching gas flow in two directions, one direction of the two-way switching valve being connected to the container containing the volatile substance and the other direction not being the two-way switching valve; A volatile substance vaporization device characterized by being directly connected to a gas path between a valve and a gas pipe joint to form a bypass gas path.
JP21664284A 1984-10-16 1984-10-16 Evaporator of volatile matter Pending JPS6194319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21664284A JPS6194319A (en) 1984-10-16 1984-10-16 Evaporator of volatile matter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21664284A JPS6194319A (en) 1984-10-16 1984-10-16 Evaporator of volatile matter

Publications (1)

Publication Number Publication Date
JPS6194319A true JPS6194319A (en) 1986-05-13

Family

ID=16691632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21664284A Pending JPS6194319A (en) 1984-10-16 1984-10-16 Evaporator of volatile matter

Country Status (1)

Country Link
JP (1) JPS6194319A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122393A (en) * 1987-04-08 1992-06-16 British Telecommunications Public Limited Company Reagent source for molecular beam epitaxy
KR20190032219A (en) 2017-09-19 2019-03-27 가부시키가이샤 호리바 에스텍 Concentration control apparatus and material gas supply system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122393A (en) * 1987-04-08 1992-06-16 British Telecommunications Public Limited Company Reagent source for molecular beam epitaxy
KR20190032219A (en) 2017-09-19 2019-03-27 가부시키가이샤 호리바 에스텍 Concentration control apparatus and material gas supply system
US10718050B2 (en) 2017-09-19 2020-07-21 Horiba Stec, Co., Ltd Concentration control apparatus and material gas supply system

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