JPS6190399A - Input circuit part of mos type memory ic - Google Patents

Input circuit part of mos type memory ic

Info

Publication number
JPS6190399A
JPS6190399A JP59210914A JP21091484A JPS6190399A JP S6190399 A JPS6190399 A JP S6190399A JP 59210914 A JP59210914 A JP 59210914A JP 21091484 A JP21091484 A JP 21091484A JP S6190399 A JPS6190399 A JP S6190399A
Authority
JP
Japan
Prior art keywords
input
chip
terminal
circuit
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59210914A
Other languages
Japanese (ja)
Inventor
Kaoru Tokushige
徳重 芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59210914A priority Critical patent/JPS6190399A/en
Publication of JPS6190399A publication Critical patent/JPS6190399A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To detect easily whether a terminal bonding of respective memory chips which are commonly connected is good or bad by providing/incorporating an input current test circuit which is controlled to be conductive or nonconductive in accordance with an external control signal. CONSTITUTION:A signal (0) is impressed on a chip selector terminal 13 of a subject chip 101, etc., out of memory chips 101-10n to which an input terminal 11 is commonly connected, and a signal (1) is impressed on the terminal 13 of another chip. Then only the input current test circuit 12 provided and incorporated in the chip 101 becomes conductive, and circuits of the other chips stay nonconductive as they are. Whether the connection of the terminal 11 of the chip 101 is good or bad is decided by a voltmeter 14 or ammeter 15 in terms of a DC current from the circuit 12 of the chip 101, and whether the input terminal bonding of each memory chip which are commonly connected is good or bad can be easily detected.32: input gate, 34: input protection.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体集積回路(IC)に係り、たとえば複数
個のMOS (絶縁fート型)メモリチップが1個のp
4ツケーノ内に収容されてなるメモリモジュールの各メ
モリチップに適用されるMOS型メモリ集積回路の入力
回路部に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor integrated circuit (IC).
The present invention relates to an input circuit section of a MOS type memory integrated circuit applied to each memory chip of a memory module housed in a four-channel memory module.

〔発明の技術的背景〕[Technical background of the invention]

最近、メモリICの応用システムにおけるメモIJIc
の実装密度を向上させるなどの目的で、複数個のメモリ
チ27’(たとえば64KX1ビツト構成)を1個のノ
セツケーゾ内に収容したメモリモジール(たとえば64
KX4ピツト構成)が開発されている。このようなメモ
リモジュール(ハイブリッドメモリ)は、第3図に示す
ようにそれぞれ同じ構成の複数個のメモリチップハ〜1
 を1個の・9ツケーゾ内に収容すると共に、各メモリ
チッ′f11〜1nの信号端子(ホンディング・ぐラド
)群のうち一部(アドレス端子、リード・ライト制御端
子)はチップ同志で共通接続されてパッケージの対応す
る外部入力端子(アドレス端子、リード・ライト端子)
に接続されている。また、各メモリチッ7°11〜1n
毎に独立に使用される信号端子(たとえばデータ入力端
子、データ出力端子、チップ選択端子等)はそれぞれ個
別にパッケージの対応する外部端子(データ入力端子D
I0〜DIj、7’−タ出力端子DOo ”””Oj、
チップ選択端子csO−C8N等)に接続きれている。
Recently, memo IJIc in the application system of memory IC
For the purpose of improving the packaging density of a memory module (for example, a 64K x 1 bit configuration) in which a plurality of memory chips 27' (for example, a 64K
KX4 pit configuration) has been developed. Such a memory module (hybrid memory) is composed of a plurality of memory chip halves each having the same configuration as shown in FIG.
are housed in one 9-bit memory chip, and some of the signal terminals (address terminals, read/write control terminals) of each memory chip'f11 to 1n are commonly connected between chips. The corresponding external input terminals (address terminals, read/write terminals) of the package
It is connected to the. Also, each memory chip 7°11~1n
Signal terminals (for example, data input terminals, data output terminals, chip selection terminals, etc.) used independently for each package are individually connected to the corresponding external terminals (data input terminal D
I0~DIj, 7'-ta output terminal DOo """Oj,
chip selection terminal csO-C8N, etc.).

第4図は、従来のMO3型メモリチップの一部を示して
おり、谷入力端子毎に入力端子3ノからの信号入力を受
けるイン・ぐ−夕等の入力ダ−ト回路32を保護するた
めに、通常は入力信号経路に直列に保護抵抗33が挿入
されると共に入力信号経路と接地端との間に入力保護回
路34が設けられている。
FIG. 4 shows a part of a conventional MO3 type memory chip, and protects input dirt circuits 32 such as in/output terminals that receive signal input from input terminals 3 for each valley input terminal. Therefore, normally a protection resistor 33 is inserted in series in the input signal path, and an input protection circuit 34 is provided between the input signal path and the ground terminal.

〔背景技術の問題点〕[Problems with background technology]

ところで、上述したようなメモリモジュールの製造工程
において、不良チップを検知して交換する必要があり、
テスト工程の1つとしてメモIJ fッfz1〜1nの
各端子群がそれぞれノーツケーノ外部端子との間でワイ
ヤデンディング接続が良好に行なわれているか否(ダン
ディング開放状態)かをチェックする必要がある。この
場合、各チップで独立に使用される信号端子については
それぞれ対応するノ9ツケーゾ外部端子に直流電圧計、
直流電流計を接続することによって、上記端子に電流が
流れるか否かによってデンディング接続の良否を判別可
能である。これに対して、チップ同志で共通接続される
入力端子については、仮に1個(もしくは複数個)のチ
ップの入力端子がビンディング不良で残りのチップの入
力端子のビンディング状態が良好な場合に、この良好な
入力端子を通じて入力保護回路34に電流が流れるので
、上記がンディング不良のチップの存否および不良に該
当するチップの検出が困難であった。そこで、チップ入
力端子の不良モードの解析を行なうために顕微鏡などを
用いた視覚チェックなどを含むかなりの手数を必要とし
、解析の自動化が不可能でありた。また、チップに対す
る機能試験を行なえば不良チップを検知可能であるが、
チン!自体の機能不良なのか上述したような端子のはン
ディング接続不良なのかの判別が困難であった。
By the way, in the manufacturing process of memory modules as mentioned above, it is necessary to detect and replace defective chips.
As part of the test process, it is necessary to check whether the wire ending connection between each terminal group of the memo IJ ffz1 to 1n and the notebook external terminal is well established (dangling open state). be. In this case, for the signal terminals used independently on each chip, a DC voltmeter is connected to the corresponding external terminal.
By connecting a DC ammeter, it is possible to determine whether or not the Dending connection is good or not based on whether or not current flows through the terminal. On the other hand, regarding input terminals that are commonly connected between chips, if one (or multiple) chip's input terminal has poor binding and the remaining chips' input terminals have good binding, Since current flows through the input protection circuit 34 through a good input terminal, it is difficult to detect the presence or absence of a defective chip and to detect a defective chip. Therefore, in order to analyze the failure mode of the chip input terminal, a considerable amount of effort is required, including a visual check using a microscope, etc., and it has been impossible to automate the analysis. In addition, it is possible to detect defective chips by performing a functional test on the chip.
Ching! It was difficult to determine whether it was a malfunction of the device itself or a faulty terminal connection as described above.

〔発明の目的〕[Purpose of the invention]

本発明は上記の事情に鑑みてなされたもので、MO8型
メモリチッチップ定端子と・にツケーソ用外部端子との
電気的接続が不良(開放状態)であるかチップ機能が不
良であるかを判別でき、複数個のメモリチップの所定の
端子同志が共通接続されて1個のパッケージに収容さn
る場合にパッケージの外部端子と上記チップの共通接続
端子との電気的接続が開放状態になっている不良チッ7
″全簡単に検知し得るMO8型メモリ集積回路の入力回
路路を提供するものである。
The present invention has been made in view of the above circumstances, and it detects whether the electrical connection between the MO8 type memory chip constant terminal and the external terminal for the external terminal is defective (open state) or the chip function is defective. It can be identified that predetermined terminals of multiple memory chips are commonly connected and housed in one package.
A defective chip 7 in which the electrical connection between the external terminal of the package and the common connection terminal of the above chip is open when
``Provides an easily detectable input circuit for MO8 type memory integrated circuits.

〔発明の概要〕[Summary of the invention]

即ち1本発明のMO8型メモリ集積回路の入力回路部は
、MO8型メモリチッチップける所定の入力端子に接続
されて設けられ、チップ外部からの制御信号に応じて上
記入力端子と所定電位端との間の導通、非導通が制御さ
れる入力電流試験回路を具備してなることを特徴とする
ものである。
Specifically, the input circuit section of the MO8 type memory integrated circuit of the present invention is connected to a predetermined input terminal of the MO8 type memory chip, and connects the input terminal and a predetermined potential end according to a control signal from outside the chip. The present invention is characterized in that it includes an input current test circuit that controls conduction and non-conduction between the two.

したがって、上記制御信号によって入力電流試験回路を
導通可能状態に制御し、前記入力端子に所定直流電圧を
印加することによって、上記入力端子と集積回路・母ツ
ケーゾ外部端子との間のデンディング接続の良否に応じ
て電流経路の有無が定まるので、はンディング良否を簡
単に検知することができる。
Therefore, by controlling the input current test circuit to a conductive state by the above control signal and applying a predetermined DC voltage to the input terminal, the connecting connection between the input terminal and the external terminal of the integrated circuit/main circuit is established. Since the presence or absence of a current path is determined depending on whether the soldering is good or bad, it is possible to easily detect whether the soldering is good or bad.

〔発明の実施例〕[Embodiments of the invention]

以下、図面を参照して本発明の一実施例を詳細に説明す
る。
Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

第1図はMO8型メモリのICチップ10における一部
を示しており、11は入力端子(ポンディングパッド)
のうちの1個(たとえばアドレス信号用)を代表的に示
しており、32は上記入力端子11からの入力信号を検
知する入力ダート回路(たとえばインバータ)、33は
上記入力端子11と人力y−ト回路32との間の入力信
号経路に直列に挿入された保護抵抗、34は上記入力?
−ト回路320入力端と接地端との間に設けられた人力
保護回路である。
FIG. 1 shows a part of an IC chip 10 of an MO8 type memory, and 11 is an input terminal (ponding pad).
One of them (for example, for an address signal) is shown as a representative, and 32 is an input dart circuit (for example, an inverter) that detects the input signal from the input terminal 11, and 33 is a circuit that connects the input terminal 11 and the input signal from the input terminal 11. A protection resistor 34 is inserted in series in the input signal path between the input circuit 32 and the input circuit 32.
- This is a human power protection circuit provided between the input terminal of the circuit 320 and the ground terminal.

さらに、本発明においては、入力端子試験回路12がチ
ップ内に付加されている。この試験回路12は、上記入
力端子(保訛抵抗330入力端ノード)11と接地端と
の間にr−ト・ソース相互が接続されたNチャネルデル
−ジョン型(D型)のMO8電界効果トランジスタ(F
ET)Ql オヨヒNチャネルエンノーンスメント型(
E型) MOS FET Q 2のドレイン・ソース間
が直列に接続され、前記保護抵抗33の出力端ノードと
V。C電源端との間にNチャネルE W MO8FET
Qsのドレイン・ソース間が接続され、このFETQs
のダートが前記FETQI 、C2の接続点ノードNに
接続されている。そして、上記FETQ2のデートがチ
ップのチッゾセレク)(C8)端子(7I?ンデイング
ノクツド)13に接続されている。
Furthermore, in the present invention, an input terminal test circuit 12 is added within the chip. This test circuit 12 is an N-channel delsion type (D type) MO8 field effect in which the r-to-source is connected between the input terminal (input node of the protection resistor 330) 11 and the ground terminal. Transistor (F
ET) Ql Oyohi N channel enhancement type (
The drain and source of the E-type MOS FET Q2 are connected in series, and the output end node of the protective resistor 33 and V. N-channel E W MO8FET between C power supply terminal
The drain and source of Qs are connected, and this FETQs
The dart is connected to the connection point node N of the FET QI and C2. The date of the FETQ2 is connected to the chip selection (C8) terminal (7I?nding node) 13 of the chip.

なお、上記チップにおいては、入力端子群のうち前記入
力端子11以外の入力端子に対しても必要に応じて上述
したような入力電流試験回路が個別に設けられて付加さ
れる。
In addition, in the above-mentioned chip, input current test circuits as described above are individually provided and added to input terminals other than the input terminal 11 among the input terminal group as necessary.

上記メモリチップは、入力端子11、C8端子13等が
パッケージの外部端子にワイヤボンディング接続された
のちノクノケーノングが施されてデバイスとなる。
The above-mentioned memory chip becomes a device by connecting the input terminal 11, C8 terminal 13, etc. to the external terminal of the package by wire bonding, and then performing a bonding process.

゛いま、上記デバイスの最終テストに際して直流試験を
行なうとき、ノツケーノ外部端子のうちのチップセレク
ト端子に11#レベルを与えると、入力電流試験回路1
2はFET(hがオンになってFETQsがオフになる
ので、上記直流試験が行なわれる入力端子11に何ら影
響を与えない。
゛Now, when performing a DC test in the final test of the above device, if the 11# level is applied to the chip select terminal of the external terminals, the input current test circuit 1
Since FET 2 (h) is turned on and FETQs is turned off, it does not have any effect on the input terminal 11 where the above DC test is performed.

この直流試験の結果が不良であった場合、入力端子11
のビンディング接続不良(開放状態)であるか否かを調
べるためには、前記外部端子のチップセレクト端子に1
0#レベルを与えると、入力電流試験回路12はFET
C2がオフになる。
If the result of this DC test is defective, the input terminal 11
In order to check whether there is a binding connection failure (open state) of the
When the 0# level is applied, the input current test circuit 12
C2 turns off.

そこで、入力端子11に対応する外部入力端子にV。c
+v□、 (FETQsの閾値電圧)以上の直流電圧を
印加することによって入力端子11の接続不良がなけれ
ば前記入力電流試験回路120FETQsに電流が流れ
、接続不良があれば上記電流が流れないので、入力端子
11の接続の良否を検知可能である。
Therefore, V is applied to the external input terminal corresponding to input terminal 11. c.
+v□, by applying a DC voltage higher than (threshold voltage of FETQs), if there is no connection failure in the input terminal 11, a current will flow through the input current test circuit 120FETQs, and if there is a connection failure, the current will not flow. It is possible to detect whether the connection of the input terminal 11 is good or bad.

また、第1図に示したメモリチップを第3図を参照して
前述したようなメモリモノニールに用いる場合には、各
チップ相互で共通接続される入力端子(U −1’・ラ
イト端子、アドレス端子)に各対応して前記入力電流試
験回路12が設けられる。このようなメモリチツfl 
Of用いたメモリモノニールの製造に際して、・ぐノケ
ーゾ前のテスト工程で各チップの共通接続された入力端
子のボンディング接続不良の有無を調べる場合には各チ
ップ毎に順次チェックすることができる。即ち、第2図
に示すように、チェックの対象となる特定の1個のチツ
7′l olに対してはそのε1端子に・ぞツケーノ用
の外部端子から”0″レベルを与え、残りの各チップに
対してはそれぞれの百端子に・ンソケーノ用の外部端子
から°1#レベルを与える。これによって、残りの各チ
ップにおいてはそれぞれの入力電流試験回路12が前述
したようにオフ状態になるので入力電流に影響を与えな
いが、前記特定の1個のチッf101の入力端子(たと
えば1))にvcc+vTH3以上の直流電圧を印加す
ると、前述したように入力端子1ノのボンディング接続
が良好な場合には入力電流試験回路12に入力電流が流
れ、ビンディング接続が不良の場合には上記入力電流が
流れない。したがって、このことから各チップの共通接
続され念入力端子の個々について順にボンディング接続
の良否をチェックすることができる。なお、14は直流
電圧計、15は直流電流計である。
Furthermore, when the memory chip shown in FIG. 1 is used in a memory monolayer as described above with reference to FIG. 3, input terminals (U -1'/write terminal, The input current test circuit 12 is provided corresponding to each address terminal (address terminal). This kind of memory chip fl
When manufacturing the memory monoyl using OF, in the test process before testing to check for defective bonding connections of the commonly connected input terminals of each chip, it is possible to check each chip one by one. That is, as shown in Fig. 2, for a specific chip 7'ol to be checked, the ε1 terminal is given the "0" level from the external terminal for the chisel, and the remaining chips are For each chip, the °1# level is applied to each terminal from the external terminal. As a result, in each of the remaining chips, each input current test circuit 12 is turned off as described above, so the input current is not affected, but the input terminal (for example, 1) of the particular chip ), when a DC voltage of vcc+vTH3 or more is applied to the input terminal 1, as described above, if the bonding connection of input terminal 1 is good, the input current flows to the input current test circuit 12, and if the binding connection is bad, the input current flows to the input current test circuit 12. does not flow. Therefore, from this, it is possible to sequentially check the quality of the bonding connection for each of the commonly connected psychological input terminals of each chip. Note that 14 is a DC voltmeter, and 15 is a DC ammeter.

〔発明の効果〕〔Effect of the invention〕

上述したように本発明のMO8型メモリ集積回路の入力
回路部によれば、メモリチップの所定端子に対するビン
ディングの良否を簡単に判別できるので、メモリモノー
−ルに使用するメモリチップに適用すればチップ同志で
共通接続される信号端子に対するビンディングの良否を
チラグ毎に簡単に検知できる。
As described above, according to the input circuit section of the MO8 type memory integrated circuit of the present invention, it is possible to easily determine whether the binding is good or bad for a predetermined terminal of a memory chip. It is possible to easily detect whether the binding is good or bad for the commonly connected signal terminals for each flicker.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のMO8型メモリ集積回路の入力回路部
の一実施例を示す回路図、第2図は本発明の応用例に係
るメモリモジュールのボンディング良否テスト状態を示
す回路図、第3図はメモリモジュールの一例を示す構成
説明図、第4図は従来のMO8型メモリ集積回路の入力
回路部を示す構成説明図である。 10.101〜lOn・・・MO8型メモリチッチッ1
1・・・入力端子、12・・・入力電流試験回路、13
・・・チッグ選択端子、32・・・入力f−)回路、3
3・・・抵抗、34・・・入力保護回路、Q1〜Q3・
・・MOS FET。 出願人代理人  弁理士 鈴 江 武 彦第1 図 第2図
FIG. 1 is a circuit diagram showing an embodiment of the input circuit section of an MO8 type memory integrated circuit according to the present invention, FIG. 2 is a circuit diagram showing a bonding quality test state of a memory module according to an application example of the present invention, and FIG. FIG. 4 is a configuration explanatory diagram showing an example of a memory module, and FIG. 4 is a configuration explanatory diagram showing an input circuit section of a conventional MO8 type memory integrated circuit. 10.101~lOn...MO8 type memory chip 1
1... Input terminal, 12... Input current test circuit, 13
...Chig selection terminal, 32...Input f-) circuit, 3
3...Resistor, 34...Input protection circuit, Q1~Q3・
...MOS FET. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2

Claims (2)

【特許請求の範囲】[Claims] (1)MOS型メモリ集積回路チップにおける所定の入
力端子に接続されて設けられ、チップ外部からの制御信
号に応じて上記入力端子と所定電位端との間の導通、非
導通が制御される入力電流試験回路を有し、上記入力端
子と集積回路パッケージ外部端子との間の導通試験を可
能ならしめたことを特徴とするMOS型メモリ集積回路
の入力回路部。
(1) An input that is connected to a predetermined input terminal in a MOS memory integrated circuit chip, and conduction or non-conduction between the input terminal and a predetermined potential end is controlled in accordance with a control signal from outside the chip. An input circuit section of a MOS type memory integrated circuit, characterized in that it has a current test circuit and is capable of conducting a continuity test between the input terminal and an external terminal of an integrated circuit package.
(2)前記MOS型メモリ集積回路チップの複数個が1
個の集積回路パッケージ内に収容され、各チップの入力
端子群の一部は各チップ相互で共通接続され、各チップ
毎の前記入力電流試験回路に対してパッケージ外部端子
から個別に制御信号が印加されることを特徴とする前記
特許請求の範囲第1項記載のMOS型メモリ集積回路の
入力回路部。
(2) A plurality of the MOS type memory integrated circuit chips are one
A part of the input terminals of each chip is commonly connected to each other, and a control signal is applied individually from the package external terminal to the input current test circuit of each chip. An input circuit section of a MOS type memory integrated circuit according to claim 1, characterized in that:
JP59210914A 1984-10-08 1984-10-08 Input circuit part of mos type memory ic Pending JPS6190399A (en)

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JPS6190399A true JPS6190399A (en) 1986-05-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159571A (en) * 1987-12-29 1992-10-27 Hitachi, Ltd. Semiconductor memory with a circuit for testing characteristics of flip-flops including selectively applied power supply voltages

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159571A (en) * 1987-12-29 1992-10-27 Hitachi, Ltd. Semiconductor memory with a circuit for testing characteristics of flip-flops including selectively applied power supply voltages

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