JPS6189652A - Resin-sealed semiconductor device and manufacture thereof - Google Patents
Resin-sealed semiconductor device and manufacture thereofInfo
- Publication number
- JPS6189652A JPS6189652A JP21195684A JP21195684A JPS6189652A JP S6189652 A JPS6189652 A JP S6189652A JP 21195684 A JP21195684 A JP 21195684A JP 21195684 A JP21195684 A JP 21195684A JP S6189652 A JPS6189652 A JP S6189652A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- adhesive
- layer
- leads
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000853 adhesive Substances 0.000 claims abstract description 28
- 230000001070 adhesive effect Effects 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 abstract description 31
- 150000002500 ions Chemical class 0.000 abstract description 6
- 238000007598 dipping method Methods 0.000 abstract description 5
- 239000012790 adhesive layer Substances 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 abstract 1
- 229920000136 polysorbate Polymers 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- LTHJXDSHSVNJKG-UHFFFAOYSA-N 2-[2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical group CC(=C)C(=O)OCCOCCOCCOCCOC(=O)C(C)=C LTHJXDSHSVNJKG-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は樹脂封止型半導体装置とその製造方法に関し、
特に、その外囲器構造に起因したボンディング部驕蝕問
題の改善に係る。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a resin-encapsulated semiconductor device and a manufacturing method thereof;
In particular, it relates to the improvement of the problem of corrosion of the bonding part caused by the envelope structure.
第２図は従来の樹脂封止型半導体装置の要部を示す断面
図である。同図において、１は金属性のベッド部である
。該ベッド部上には半導体チップ２がダイボンディング
されている。前記ベッド部１の周囲には金属性のリード
部３が配設され、該リード部はボンディングワイヤ４を
介して前記半導体チップ２の頂面の内部端子（ポンディ
ングパッド）に接続されている。そして、前記ベッド部
３、半導体チップ２、ボンディングワイヤ４及びリード
３の一端部は樹脂モールド層５で封止され、またリード
３の他端部は樹脂モールド層５の側壁から外方に延出さ
れて下方に折曲げられている。FIG. 2 is a sectional view showing the main parts of a conventional resin-sealed semiconductor device. In the figure, 1 is a metal bed portion. A semiconductor chip 2 is die-bonded onto the bed portion. A metal lead portion 3 is disposed around the bed portion 1, and the lead portion is connected to an internal terminal (bonding pad) on the top surface of the semiconductor chip 2 via a bonding wire 4. One end of the bed portion 3, semiconductor chip 2, bonding wire 4, and lead 3 is sealed with a resin mold layer 5, and the other end of the lead 3 extends outward from the side wall of the resin mold layer 5. and is bent downward.
上記第２図の樹脂封止型半導体装置は、ベッド部１およ
びリード３のパターンを打抜き加工した薄板状の金属製
リードフレームを用い、次のようにして製造されている
。The resin-sealed semiconductor device shown in FIG. 2 is manufactured in the following manner using a thin metal lead frame in which the patterns of the bed portion 1 and the leads 3 are punched.
まず、リードフレームのベッド部上に半導体チップ２を
ダイボンディングし、半導体チップの内部端子とリード
パターン先端部との間にワイヤボンディングを施す。次
いで、このように組立てられたリードフレームをモール
ド金型内にセットし、エポキシ樹脂のトランスファーモ
ールド等により樹脂モールド層５を形成して樹脂封止を
行なう。First, the semiconductor chip 2 is die-bonded onto the bed portion of the lead frame, and wire bonding is performed between the internal terminals of the semiconductor chip and the leading end portions of the lead patterns. Next, the lead frame assembled in this manner is set in a mold, and a resin mold layer 5 is formed by epoxy resin transfer molding or the like to perform resin sealing.
その後、リードフレームの枠体からベッド部１を支持し
ている吊りビン及び各リードパターンを切所し、リード
３を所定の方向に折曲げる。最後に、リード３の露出部
分に錫メッキや半田ディップ等による外装を施して製品
とする。Thereafter, the hanging bin supporting the bed portion 1 and each lead pattern are cut out from the frame of the lead frame, and the leads 3 are bent in a predetermined direction. Finally, the exposed portions of the leads 3 are coated with tin plating, solder dipping, etc. to produce a product.
上記の樹脂封止型半導体装置では、樹脂モールド層５と
リード３との密着性が悪いことから、第２図に示したよ
うに両者の間に隙間が形成されざるを得ない。この隙間
を通って外部から水分が侵入し、この水分はボンディン
グワイヤ４を伝ってポンディングパッドに達するため、
従来の樹脂封止型半導体装置ではホンディングパッドが
腐蝕するという問題が頻発しでいた。In the resin-sealed semiconductor device described above, since the adhesion between the resin mold layer 5 and the leads 3 is poor, a gap is inevitably formed between them as shown in FIG. Moisture enters from the outside through this gap, and this moisture travels through the bonding wire 4 and reaches the bonding pad.
Conventional resin-sealed semiconductor devices frequently suffer from corrosion of the bonding pads.
この問題は、リードに錫メッキや半田ディップで外装を
施すことによって著しく顕著となる。即ち、錫メッキに
はアルカリによる脱脂や酸による活性化等の前処理を必
要とし、また半田ディップにはフラックスによる前処理
を必要とするため、これら処理液中のイオンが樹脂モー
ルド層５とリード３の間の隙間に入り込んで残留するこ
とになる。そして、この処理液中のイオンは前述の外部
から侵入した水分の場合と同様、時間と共に内部に移動
し、ポンディングパッドに達するからである。This problem becomes more pronounced when the leads are coated with tin plating or solder dip. That is, tin plating requires pre-treatment such as degreasing with alkali and activation with acid, and solder dipping requires pre-treatment with flux, so ions in these treatment liquids form resin mold layer 5 and lead. It will enter the gap between 3 and remain. This is because the ions in the processing liquid move inward over time and reach the bonding pad, similar to the case of moisture entering from the outside as described above.
本発明は上記事情に鑑みてなされｌ；もので、外部から
の水の侵入を防止して耐湿性を向上できる樹脂封止型半
導体装置を提供し、また外装！２！１理における前処理
液中のイオンの侵入をも防止して更に信頼性の向上を図
ることができる樹脂封止型半導体装置の製造方法を提供
するものである。The present invention has been made in view of the above circumstances, and provides a resin-sealed semiconductor device that can prevent water from entering from the outside and improve moisture resistance. The present invention provides a method for manufacturing a resin-sealed semiconductor device that can further improve reliability by preventing the intrusion of ions in the pretreatment liquid in the 2!1 process.
本発明による樹脂封止型半導体装置は、樹脂モールド層
の内部に封止された半導体チップと、前記樹脂モールド
層の内部でこの半導体チップにワイヤボンディングされ
、且つ前記樹脂モールド層から外方に延出されたリード
とを具備し、該リードと前記樹脂モールド層との間の隙
間を嫌気性接着剤で閉塞したことを特徴とするものであ
る。A resin-molded semiconductor device according to the present invention includes a semiconductor chip sealed inside a resin mold layer, and a wire bonded to the semiconductor chip inside the resin mold layer and extending outward from the resin mold layer. The present invention is characterized in that it comprises a lead that has been taken out, and a gap between the lead and the resin mold layer is closed with an anaerobic adhesive.
また、本発明による樹脂封止型半導体装置の製造方法は
、リードフレーム上で半導体チップのダイボンディング
及びワイヤボンディングを行ない、更に前記半導体チッ
プ及びワイヤボンディング部分を封止する樹脂モールド
層を形成した後、前記リードの露出部分にメッキ或いは
半田ディップ等の浴装置１１埋を施す前に、嫌気性接着
剤中に外囲器を浸漬して所定の硬化処理を施し、未硬化
部分を除去することを特徴とするものである。Further, the method for manufacturing a resin-sealed semiconductor device according to the present invention includes performing die bonding and wire bonding of a semiconductor chip on a lead frame, and further forming a resin mold layer for sealing the semiconductor chip and the wire bonding portion. Before applying plating or solder dipping to the exposed portion of the lead in the bath device 11, the envelope is immersed in an anaerobic adhesive, subjected to a predetermined hardening treatment, and the unhardened portion is removed. This is a characteristic feature.
本発明において用いる嫌気性接着剤は、硬化に際して酸
素を嫌うため、空気から遮断されている部分では硬化す
るが空気に触れていない部分では硬化しない性質を有し
ている。このため、嫌気性接着剤はネジ締め部分の固結
等に従来から広く用いられている。市販されている嫌気
性接着剤の例としては、例えば下記の化学式で表わされ
るテトラエチレングリコールジメタクリレー１−を主成
分とするものが挙げられる。The anaerobic adhesive used in the present invention dislikes oxygen during curing, and therefore has the property of curing in areas shielded from air but not in areas not exposed to air. For this reason, anaerobic adhesives have been widely used for solidifying screwed parts. Examples of commercially available anaerobic adhesives include those whose main component is tetraethylene glycol dimethacrylate 1-, which is represented by the following chemical formula.
ＣＨ３Ｃｌ１３
ＣＨ２＝ Ｃ−Ｃ００ｔＣ１４□ＣＨ２（ト犬ＯＣ−Ｃ
”＝Ｃ１ｉｔ本発明において特に上記のような嫌気性接
着剤を用いる理由は、樹脂封止型半導体装置のリード部
分も硬化した接着剤層で被覆されてしまうと、プリント
配線基板等に実装した際に導通がとれなくなってしまう
ため、これを防止するためである。CH3Cl13 CH2= C-C00tC14□CH2 (Token OC-C
”=C1it The reason why the above-mentioned anaerobic adhesive is particularly used in the present invention is that if the lead portion of the resin-sealed semiconductor device is also covered with the hardened adhesive layer, it may cause problems when mounted on a printed wiring board, etc. This is to prevent this from occurring, since conductivity would otherwise be lost.
即ち、通常の樹脂接着剤を用いた場合には樹脂モールド
層とリードとの隙間にのみ硬化層を形成するのは困難で
、リードも硬化接着剤層でコーティングされてしまうこ
とになり、これを除去するのは容易でない。これに対し
嫌気性接着剤を用いた場合には、外囲器の全体を接着剤
中に浸漬したとしても、露出部分では硬化が起こらず、
樹脂モールド庖とリードの隙間に入り込んだ接着剤だけ
が硬化する。従って、この場合にはトリクレン等の溶剤
で処理することにより、リードの露出部分に付着した未
硬化の接着剤層を容易に除去することができる。In other words, when using a normal resin adhesive, it is difficult to form a cured layer only in the gap between the resin mold layer and the leads, and the leads are also coated with the cured adhesive layer. It is not easy to remove. On the other hand, when using an anaerobic adhesive, even if the entire envelope is immersed in the adhesive, the exposed portions will not harden.
Only the adhesive that gets into the gap between the resin mold and the lead hardens. Therefore, in this case, the uncured adhesive layer adhering to the exposed portion of the lead can be easily removed by treatment with a solvent such as trichloride.
本発明による樹脂封止型半導体装置は、上記のようにし
て樹脂モールド層とリードの間の隙間をｍ気性接着剤で
閉塞したため、外部からの水分の侵入を顕著に防止でき
る。従って、アルンミニウム製のポンディングパッドや
配線の腐蝕が抑制され、耐湿性および信頼性を向上する
ことができる。In the resin-sealed semiconductor device according to the present invention, since the gap between the resin mold layer and the lead is closed with the m-temperature adhesive as described above, it is possible to significantly prevent moisture from entering from the outside. Therefore, corrosion of the aluminum bonding pads and wiring is suppressed, and moisture resistance and reliability can be improved.
□ また、本発明の製造方法を適用してリードの外装処
理前に上述の嫌気性接着剤による隙間閉塞処理を行なえ
ば、メッキ或いは半田ディップの前処理液中に含まれる
イオンが外囲器内部に侵入するのをも防止できる。従っ
て、□半導体チップの配線やポンディングパッドの腐蝕
防止効果は顕著に増大し、優れた信頼性を有する樹脂封
止型半導体装置を製造することができる。□ Furthermore, if the manufacturing method of the present invention is applied and the gap is closed using the anaerobic adhesive described above before the lead is packaged, the ions contained in the pretreatment liquid for plating or solder dipping can be removed from the inside of the package. It can also prevent intrusion into the Therefore, the effect of preventing corrosion of the wiring and bonding pads of the semiconductor chip is significantly increased, and a resin-sealed semiconductor device with excellent reliability can be manufactured.
第１図は本発明の一実施例になる樹脂封止型半導体装置
の要部を示す断面図である。同図において、３はリード
、５は樹脂モールド層である。この実施例では、樹脂モ
ールド層５とリード３との隙間に嫌気性接着剤の硬化層
６が形成され、隙間が閉塞されている。その他の構成は
第２図の従来の樹脂封止型半導体装置と同じである。即
ち、図示は省略しであるが、樹脂モールド層５の内部に
は第２図の場合と同様、ベッド部１上にダイボンディン
グされた半導体チップ２が封止され、該半導体チップと
り−ド３の間にはワイヤボンディングが施されている。FIG. 1 is a sectional view showing a main part of a resin-sealed semiconductor device according to an embodiment of the present invention. In the figure, 3 is a lead, and 5 is a resin mold layer. In this embodiment, a cured layer 6 of an anaerobic adhesive is formed in the gap between the resin mold layer 5 and the lead 3 to close the gap. The rest of the structure is the same as the conventional resin-sealed semiconductor device shown in FIG. That is, although not shown, the semiconductor chip 2 die-bonded onto the bed portion 1 is sealed inside the resin mold layer 5 as in the case of FIG. Wire bonding is performed between them.
□
上記実施例の樹脂封５”正型半導体装置では、嫌気性接
着剤の硬化層６′が（外部□からの水分の侵入は防＜：
０、耐あユおよび一軸性、大幅、向呈ア。。□ In the resin-sealed 5" positive semiconductor device of the above embodiment, the cured layer 6' of the anaerobic adhesive prevents moisture from entering from the outside.
0, anti-sweat and uniaxial property, significantly, facing a. .
次に、本発明による製造方法の一実施例を説明する。Next, an embodiment of the manufacturing method according to the present invention will be described.
支１１
（１） まず、ＤＩＰ１６ビン用のリードフレームを
用い、ポンディングパッドのみを形成したダミーペレッ
トをダイボンディングした後、ワイヤボンディングを茄
した。このように組立てたリードフレームをモールド金
型内にセットし、エポキシ樹脂のトランスファーモール
ドにより樹脂封止を行なった後、リードカット及びリー
ドフォーミングを行なって個々のＤＩＰ型外囲器を分離
した。Support 11 (1) First, using a lead frame for a DIP16 bin, a dummy pellet on which only a bonding pad was formed was die-bonded, and then wire bonding was performed. The lead frame assembled in this manner was set in a mold and sealed with an epoxy resin transfer mold, followed by lead cutting and lead forming to separate individual DIP type envelopes.
（２上記によりダミーベレットを封止した樹脂封止パッ
ケージを製造した後、これを嫌気性接着剤（ロックタイ
ト社製、商品名ロックタイト）の浴中に浸漬し、更に１
００℃で加熱することにより付着した接着剤の硬化処理
を行ならた。続いて、トリクレンによる洗浄を行なった
ところ、リー ド。(2) After producing a resin-sealed package in which the dummy pellet was sealed as described above, it was immersed in a bath of an anaerobic adhesive (manufactured by Loctite, trade name: Loctite), and then
The adhered adhesive was cured by heating at 00°C. Next, when I washed it with Triclean, it showed a lead.
及び樹脂モールド層表面では接着剤の硬化反応が 、。And the curing reaction of the adhesive occurs on the surface of the resin mold layer.
進行しなかったため当該部分に付着していた接着剤は容
易に除去される一方、リードと樹脂モールド層との隙間
には接着剤の硬化層が形成された。Because the adhesive did not progress, the adhesive that had adhered to that part was easily removed, while a hardened layer of adhesive was formed in the gap between the lead and the resin mold layer.
（３） 次に、リードの露出表面にアルカリによる脱
脂処理を行なった。脱脂溶液としては、ＮａＯＨ，Ｎａ
ＣＯ５及び硅ｍソーダを合計３０〜６０ｇ／ｅ含むアル
カリ性水溶液を用いた。(3) Next, the exposed surface of the lead was degreased with alkali. As a degreasing solution, NaOH, Na
An alkaline aqueous solution containing a total of 30 to 60 g/e of CO5 and silica soda was used.
続いて、リード表部の酸化層を除去し、またリードフォ
ーミングの際の加工歪み層を除去するため、１５重量％
のＨ（ｌ溶液による活性化処理を行なった。Next, 15% by weight was added to remove the oxidized layer on the lead surface and also to remove the processing strain layer during lead forming.
Activation treatment was performed using a H(l solution).
（４）上記の脱脂処理および活性化処理を施した後、こ
れを硫酸酸性の錫メツキ浴中に浸漬し、電流密度１Ａ／
ｄＴｒＬ２で２０〜３０分間の電解メッキを行ない、リ
ードの露出表面に膜厚５〜１ｏＩ１１ｒＬの錫メッキ層
を形成した。(4) After performing the above degreasing treatment and activation treatment, this was immersed in a sulfuric acid acidic tin plating bath, and the current density was 1A/
Electrolytic plating was performed using dTrL2 for 20 to 30 minutes to form a tin plating layer with a film thickness of 5 to 1oI11rL on the exposed surface of the lead.
ＬｆＬ
実塵例における（２）の工程、即ら、嫌気性接着剤に、
よる隙間閉塞を省略した以外は総て実施例と同様に行な
った。LfL Step (2) in the actual dust example, that is, to the anaerobic adhesive,
All procedures were carried out in the same manner as in the example except that the gap closing was omitted.
比較試験
上記実施例で得られた樹脂封止型半導体装置（実施部品
）および比較例で得られた樹脂封止型半導体装置（比較
部品）の両者を、８５℃、８５％ＲＨの雰囲気中に放置
し、所定時間経過後におけるポンディングパッドの腐蝕
発生串を比較した。その結果を下記第１表に示す。Comparative test Both the resin-sealed semiconductor device (implemented part) obtained in the above example and the resin-sealed semiconductor device (compared part) obtained in the comparative example were placed in an atmosphere of 85°C and 85% RH. The skewers were left to stand for a predetermined period of time, and the corrosion of the skewers on the bonding pads was compared. The results are shown in Table 1 below.
なお、試験例１〜７の何れの場合にも、試Ｉｔ数は実施
例量および比較例量ともに１００個を用いた。In addition, in any case of Test Examples 1 to 7, 100 samples were used for both the example amount and the comparative example amount.
また腐蝕発生の確認は、個々の試料について樹脂モール
ド層を剥離し、ダミーベレットの個々のポンディングパ
ッド部分を顕ｇｌ鏡で観察することにより行なった。Further, the occurrence of corrosion was confirmed by peeling off the resin mold layer of each sample and observing the individual bonding pad portions of the dummy pellets with a microscope.
この試験結果から、実施例量は従来品に比較して信頼性
が著しく高いことが明らかである。From this test result, it is clear that the reliability of the example quantity is significantly higher than that of the conventional product.
以上詳述したように、本発明の樹脂封止型半導体装置は
外部からの水の浸入を防止して耐湿性を向上でき、また
本発明の製造方法によれば外装処理における前処理液中
のイオンの侵入をも防止し、樹脂封止型半導体装置の信
頼性を更に向上できる等、顕著な効果が得られるもので
ある。As described in detail above, the resin-sealed semiconductor device of the present invention can prevent water from entering from the outside and improve its moisture resistance. Remarkable effects such as preventing ion penetration and further improving the reliability of resin-sealed semiconductor devices can be obtained.
第１図は本発明の一実施例になる樹脂封止型半導体装置
の要部を示す断面図、第２図は従来の樹脂封止型半導体
装置を示す断面図である。
１・・・ベッド部、２・・・半導体チップ、３リード、
４・・・ボンディングワイヤ、５・・・樹脂モールド層
、６・・・嫌気性接着剤の硬化層FIG. 1 is a sectional view showing a main part of a resin-sealed semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional resin-sealed semiconductor device. 1...Bed part, 2...Semiconductor chip, 3 leads,
4... Bonding wire, 5... Resin mold layer, 6... Cured layer of anaerobic adhesive
Claims (2)
と、前記樹脂モールド層の内部でこの半導体チップにワ
イヤボンディングされ、且つ前記樹脂モールド層から外
方に延出されたリードとを具備し、該リードと前記樹脂
モールド層との間の隙間を嫌気性接着剤で閉塞したこと
を特徴とする樹脂封止型半導体装置。(1) Comprising a semiconductor chip sealed inside a resin mold layer, and leads wire-bonded to the semiconductor chip inside the resin mold layer and extending outward from the resin mold layer. . A resin-sealed semiconductor device, characterized in that a gap between the lead and the resin mold layer is closed with an anaerobic adhesive.
ング及びワイヤボンディングを行ない、更に前記半導体
チップ及びワイヤボンディング部分を封止する樹脂モー
ルド層を形成した後、前記リードの露出部分にメッキ或
いは半田ディップ等の外装処理を施す前に、嫌気性接着
剤中に外囲器を浸漬して所定の硬化処理を施し、未硬化
部分を除去することを特徴とする樹脂封止型半導体装置
の製造方法。(2) After performing die bonding and wire bonding of the semiconductor chip on the lead frame and forming a resin mold layer to seal the semiconductor chip and wire bonding portion, the exposed portion of the lead is plated or soldered. 1. A method for manufacturing a resin-sealed semiconductor device, characterized in that, before applying an exterior treatment, the envelope is immersed in an anaerobic adhesive, subjected to a predetermined hardening treatment, and uncured portions are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21195684A JPS6189652A (en) | 1984-10-09 | 1984-10-09 | Resin-sealed semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21195684A JPS6189652A (en) | 1984-10-09 | 1984-10-09 | Resin-sealed semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6189652A true JPS6189652A (en) | 1986-05-07 |
Family
ID=16614481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21195684A Pending JPS6189652A (en) | 1984-10-09 | 1984-10-09 | Resin-sealed semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6189652A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2479569A (en) * | 2010-04-15 | 2011-10-19 | Jason Grant Hayward | Cap for protecting boilie type fishing bait |
-
1984
- 1984-10-09 JP JP21195684A patent/JPS6189652A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2479569A (en) * | 2010-04-15 | 2011-10-19 | Jason Grant Hayward | Cap for protecting boilie type fishing bait |
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