JPS6186495A - Gas phase growth apparatus - Google Patents

Gas phase growth apparatus

Info

Publication number
JPS6186495A
JPS6186495A JP20947584A JP20947584A JPS6186495A JP S6186495 A JPS6186495 A JP S6186495A JP 20947584 A JP20947584 A JP 20947584A JP 20947584 A JP20947584 A JP 20947584A JP S6186495 A JPS6186495 A JP S6186495A
Authority
JP
Japan
Prior art keywords
bell jar
lamp houses
mentioned
phase growth
assembly body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20947584A
Other languages
Japanese (ja)
Other versions
JPH0249280B2 (en
Inventor
Masayuki Nozawa
野沢 昌幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP20947584A priority Critical patent/JPH0249280B2/en
Publication of JPS6186495A publication Critical patent/JPS6186495A/en
Publication of JPH0249280B2 publication Critical patent/JPH0249280B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain the titled apparatus making the attachment and the detachment of a wafer simple and easy by constituting the apparatus so that plural lamp houses are provided around the outer part of a bell jar incorporated with a susceptor assembly body of a lower part-driving system and several pieces thereof can be opened to the outer part. CONSTITUTION:A gas phase growth apparatus is constituted by fitting a barrel type susceptor assembly body 11 holding the wafers 12 to a rotary axis 13 by which a base plate 16 is perforated upward, enabling the lower end thereof to be sealed on the above-mentioned base plate 16, providing a bell jar 14 by which a reaction chamber is formed in the circumference of the above-mentioned assembly body 11 so that it is capable of ascending and descending with an elevating mechanism 28 and furthermore providing plural lamp houses 24 surrounding the outer part in opposition to the above-mentioned susceptor assembly body 11. In the gas phase growth apparatus, the central part of the lamp houses 24 corresponding to the nearly half circumference of the above-mentioned bell jar 14 is enabled to cut off and the left plus right lamp houses are joined freely rockingly and thereby the lamp houses 24 corresponding to the above-mentioned half circumferential part are constituted so as to be opened to the outside in a double-leafed hinged door.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明はシリコン等の半導体物質基板(以下ウェハとい
う)にシリコン結晶等を気相成長させるバレル型の気相
成長装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field to which the Invention Pertains] The present invention relates to a barrel-type vapor phase growth apparatus for vapor phase growing silicon crystals or the like onto a semiconductor material substrate (hereinafter referred to as a wafer) such as silicon.

〔従来技術〕[Prior art]

従来実用化されているランプ加熱によるノくレル型の気
相成長装置は、サセプタを回転させる回転軸の駆動源が
上方にあった。これは、回転軸と共にサセプタを上昇さ
せ、反応管およびそれを取囲むランプハウスの上方に該
サセプタを位置させてウェハの取付け、取外しを行ない
易くする几めである。しかしながら、駆動源が上方にあ
ると、回転部からのゴミがウニノ1に落下して汚染を生
ずる欠点がある。そこで、駆動源を下刃に位置させる方
式のものも提案されている。この方式ではベル形の反応
管すなわちベルジャと共にその周囲に設けられているラ
ンプハウスを上昇させなければ、サセプタに対するウェ
ハの取付け、取外しが行ない難く、装置講成上好ましく
なりとされてい念。
In the nozzle-type vapor phase growth apparatus that uses lamp heating that has been put into practical use in the past, the drive source for the rotating shaft that rotates the susceptor is located above. This is a mechanism for raising the susceptor together with the rotating shaft and positioning the susceptor above the reaction tube and the lamp house surrounding it, making it easier to attach and detach the wafer. However, if the drive source is located above, there is a drawback that dirt from the rotating parts falls onto the unit 1 and causes contamination. Therefore, a system in which the drive source is located at the lower blade has also been proposed. In this method, it is difficult to attach and detach the wafer to and from the susceptor without raising the bell-shaped reaction tube, that is, the bell jar, and the lamp house provided around it, which is considered undesirable in terms of equipment design.

〔発明の目的〕[Purpose of the invention]

本発明にこのような欠点を除去した本のでその目的は、
一部のランプハウスを側方へ移動可能即ちウェハ着脱の
際は開かせることによりウェハの着脱を行なうようにし
簡潔な構成により下方駆動方式を採用し得るようにした
気相成長装置を提供することにある。
The purpose of this book is to eliminate such drawbacks in the present invention.
To provide a vapor phase growth apparatus in which a part of the lamp house can be moved to the side, that is, by opening it when attaching and detaching a wafer, and a downward driving method can be adopted with a simple configuration. It is in.

〔発明の要点〕[Key points of the invention]

本発明の気相成長装置は、ペースプレートと、ペースプ
レート全貫通して上方に伸びる回転軸と、回転軸に取付
けられたバレル型のサセプタ組立体と、下端がペースプ
レートに密封可能になされサセプタ組立体の周囲に反応
室を形成するベルジャと、ベルジャの昇降機樗と、ベル
ジャの外方を取巻いて位置しサセプタ組立本のサセプタ
に対向すべ(設けらnた複数のランプハウスとからなり
、該う/グハウスのうちのいぐっかが外方へ開き得る工
う[構成したものである。
The vapor phase growth apparatus of the present invention includes a pace plate, a rotating shaft that extends upward through the entire pace plate, a barrel-shaped susceptor assembly attached to the rotating shaft, and a susceptor whose lower end can be sealed to the pace plate. It consists of a bell jar forming a reaction chamber around the assembly, an elevator chest of the bell jar, and a plurality of lamp houses located around the outside of the bell jar and facing the susceptor of the susceptor assembly, Constructed so that one part of the house can open outward.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の一実施例を示した図について説明する。第
1図においてサセプタ組立体1】は複数枚の短冊状をし
たサセプタが多角形状に配置されると共に、軸心に対し
勾配を有しかつ上面および下面はフタ状体にエリおおわ
nておりその外周には多数のウェハ12が取付けである
。サセプタ組立体11は上下のフタ状体に固着したセラ
ミックス等の非金属製かつ中空の回転軸13にニジ両方
向へ回転されるようになさhており、その外周お工び上
方は石英製のベルジャ14にエリおおわれている。
A diagram showing an embodiment of the present invention will be described below. In Fig. 1, the susceptor assembly 1 has a plurality of strip-shaped susceptors arranged in a polygonal shape, has an inclination with respect to the axis, and has an upper and lower surface covered with a lid-like body. A large number of wafers 12 are attached to the outer periphery. The susceptor assembly 11 is configured to be rotated in both directions by a hollow rotary shaft 13 made of non-metallic material such as ceramics, which is fixed to the upper and lower lid-like bodies, and a quartz bell jar is formed on the outer periphery of the susceptor assembly 11. It is covered by 14.

ベルジャ14の下方にはこれと同心かつサセプタ組立体
11の回転を妨げない近接したわずかな隙間を有する位
置に石英製の円筒体15があり、ベルジャ14お工び円
筒体15は共にステンレス鋼製のペースプレート16上
に密接した状態で載置されてhる。なお円筒体15はサ
セプタ組立体シテベルジャ】4とサセプタ組立体11お
よび円筒体15にLり形成さnる空間を反応室といい、
回転(旬13(1ベースプレート16を気密に貫〕〜し
ている。ベルジ4−IJの下側内周と円筒体15のρ 下負:1外周との間に01ベ一スプレート16表面から
曾4イオンの故山を阻止する定め石英リング19Aが散
か′iしており、この石英リング19Aとべ一スブンー
ト16Kに反応室のガスを外部に排出するための孔1g
Bが、あけである。
Below the bell jar 14, there is a cylindrical body 15 made of quartz at a position concentric with the bell jar 14 and having a small gap close to it that does not hinder the rotation of the susceptor assembly 11. Both the cylindrical body 15 of the bell jar 14 are made of stainless steel. are placed in close contact on the pace plate 16 of the The cylindrical body 15 is a susceptor assembly, and the space formed by the susceptor assembly 11 and the cylindrical body 15 is called a reaction chamber.
Rotation (13 (passes through the 1 base plate 16 airtightly)). A quartz ring 19A is scattered around to prevent the formation of 4 ions, and a hole 1g is provided between the quartz ring 19A and the base ring 16K for discharging gas from the reaction chamber to the outside.
B is Ake.

回転1浦13の中L?にばそれぞれ固定の内管17およ
び外818の2”1鱈1;設けら几、内管17からにN
2或いはH2のガスが上方に向って流れ外管18は上端
で複数(図でid 2本のみ示しである)に分岐してノ
ズル18A&てなって下方にあるウェハ12に向って反
応カスが流几る工うになっている。なお反応ガスの流れ
の、刑部は後述する。
Rotation 1ura 13 medium L? The inner tube 17 and the outer tube 818 are each fixed at 2"1; from the inner tube 17 to the N
2 or H2 gas flows upward, and the outer tube 18 branches into a plurality of parts (only two IDs are shown in the figure) at the upper end, and the reaction residue flows toward the wafer 12 located below through the nozzle 18A. The process is getting better. The details of the flow of the reaction gas will be described later.

ベルジャ14の下部外周には、これを取り囲み、ペース
グレート16の外周に配置これたペース20とに工Vベ
ルジャ14側のみを開放した排気麿゛クト21が設けら
れ、この排気i゛クト1は第2図に示す排気管22に接
続されている。排気i。
At the outer periphery of the lower part of the bell jar 14, an exhaust pipe duct 21 is provided which surrounds the bell jar 14 and is open only on the V bell jar 14 side. It is connected to an exhaust pipe 22 shown in FIG. Exhaust i.

クト2】上Ktlf、多数のランプ23を有するランプ
ハウス24か、第2図に示すように、ベルジャ】4を取
り囲んで配置されている。ランプハウス2・1の背面側
にはA冷却流体供給部25が形成され、A冷却流体供給
部25Kに不図示の送風機および冷却機からの冷却空気
が吹き込まれ、冷却空ンプ23お工びベルジャ】4に吹
きつけてこnらへ を冷却するようになっている。
A lamp house 24 having a large number of lamps 23 is arranged surrounding the bell jar 4, as shown in FIG. An A cooling fluid supply section 25 is formed on the back side of the lamp house 2.1, and cooling air from a blower and a cooler (not shown) is blown into the A cooling fluid supply section 25K, and the cooling air pump 23 and bell jar are blown into the A cooling fluid supply section 25K. ] 4 to cool these areas.

ペース20には排気l°タクト】に隣接して昇降お工ひ
回転機構28が設けてあり、同機構28は上端に腕29
が固着され、腕29の先端は把持具30に工りベルジャ
14の頂部に固着した把持部31を離脱可能に把持して
いる。また腕29の先端ば把持、に32によりB冷却流
体供給部33を取付けている。B冷却流体供給部33の
下端はランプハウス24の上面に載置されると共に、そ
の内壁34には多数の孔35があけられているためA冷
却流体供給部25と同様に冷却空気がベルジャ】4の上
部に吹きつけらnる。ここでベルジャ14とB冷却流体
供給部33とは腕29に取付けられているため、同時に
昇降可能であり、ベルジー1−14の下面がノズルIR
Aの上方まで上昇し几後は腕29を旋回させることにエ
リベルジャ14お工びB冷却流体供給部33を側方へ旋
回するこ24に端部AおよびBが互いに回動自在に連結
され、下側中央に切離さ扛る工うになっており、同図に
点線で示した位置に移動可能になっている。
The pace 20 is provided with an elevating and rotating mechanism 28 adjacent to the exhaust tact, and the mechanism 28 has an arm 29 at its upper end.
is fixed to the bell jar 14, and the tip of the arm 29 is made into a gripping tool 30 and removably grips a gripping part 31 fixed to the top of the bell jar 14. Further, a B cooling fluid supply section 33 is attached to the tip of the arm 29 by a grip 32. The lower end of the B cooling fluid supply section 33 is placed on the upper surface of the lamp house 24, and its inner wall 34 has a number of holes 35, so that cooling air is supplied to the bell jar like the A cooling fluid supply section 25. Spray on top of 4. Here, since the bell jar 14 and the B cooling fluid supply section 33 are attached to the arm 29, they can be raised and lowered at the same time, and the lower surface of the bell jar 1-14 is connected to the nozzle IR.
After rising above A and turning the arm 29, the eliberger 14 moves the B cooling fluid supply section 33 to the side, and the ends A and B are rotatably connected to each other. There is a cut-out mechanism in the center of the lower side, which allows it to be moved to the position shown by the dotted line in the same figure.

Aお工びB冷却流体供給部25お工び33から吹き出さ
れた冷却空気はベルジャ14の外周およびランプ23を
冷却しながら下降し、排気ダクト21内に入った後2図
の上方に示した排気管22から外部に強制的に排出さ几
る。反応ガスの流れるノズルIRAは図に示すようにこ
の例では放射状ice本設けてあり、先端近(には下向
きの孔36(Z1図参照)が1個あけてあり、かつこの
孔36に8本のノズル18Aの2本或いF1a本を組に
して回転軸13の軸心からの距離を変えることにより、
軸心に対し勾配を有するサセプタ組立体】1上の軸心か
らの距離の異なるウェハ12の各々に対応して反応ガス
が噴出するようにしである。
The cooling air blown out from the cooling fluid supply section 25 and the cooling fluid supply section 33 descends while cooling the outer circumference of the bell jar 14 and the lamp 23, and enters the exhaust duct 21 as shown in the upper part of Fig. 2. It is forcibly discharged to the outside from the exhaust pipe 22. As shown in the figure, the nozzle IRA through which the reaction gas flows is provided with radial ice in this example, with one downward hole 36 (see diagram Z1) near the tip, and eight holes in this hole 36. By combining the two nozzles 18A or F1a as a set and changing the distance from the axis of the rotating shaft 13,
Susceptor assembly having an inclination with respect to the axial center] Reaction gas is ejected corresponding to each of the wafers 12 at different distances from the axial center.

或いはこの槽底のほかノズル1FIAの2本を組にして
それぞれの先端近くに孔36−を互いに向き合う形で傾
斜して設けることにエリ、噴出した2つの反応ガスの流
れが衝突して下向きの広いガス流を形成するようにして
もよい。
Alternatively, in addition to the bottom of the tank, it is also possible to make two nozzles 1FIA as a set and provide holes 36- near the tips of each at an angle so as to face each other. A wide gas flow may also be formed.

次に前述し几実施例の動作を説明する。昇降等の機構2
8に工9ベルジャ】4とB冷却流体供給部33を上昇さ
せ、次いでランプノ・ウス24fr第28に工9ベルジ
ャ14とB冷却流体供給部33を下降させて第1図の状
態にする。この状態で内管17と外管18からN2ガス
を噴出して空気をパージし、空気のパージが終了した後
、H2ガスにエフ前記N2ガスをパージし、次いでラン
プ23にエフ加熱する。加熱にエリウニノ・12か所定
温1jl: UC:aすると外管18従ってノズル18
Aから112カスと共にミ/ラン等の反応ガスを噴出さ
せることにより気相成長を行なう。
Next, the operation of the above-mentioned embodiment will be explained. Lifting mechanism 2
8, the bell jar 14 and the B cooling fluid supply section 33 are raised, and then the bell jar 14 and the B cooling fluid supply section 33 are lowered to the state shown in FIG. In this state, N2 gas is ejected from the inner tube 17 and the outer tube 18 to purge the air. After the air purge is completed, the N2 gas is purged into the H2 gas, and then the lamp 23 is heated by F. Heating: 12 or predetermined temperature 1jl: UC:a then outer tube 18 and therefore nozzle 18
Vapor phase growth is performed by blowing out a reaction gas such as Mi/Ran from A together with the 112 dregs.

このとき内管17からはそのままH2ガスを噴出を・す
ることにエリベルジャ14の上部空間をH2ガスで充満
せしめ、もってベルジャ14の上部壁面の冷却と上部壁
面への反応ガスの接触を阻止する。そしてこれらのガス
にベースプレート16の穴19Bから排出される。この
ときサセブ部に回り込んでゴミを飾い上げ7’Cす、ベ
ルジャ14内のカス流を乱したりすることなぐ円滑に排
出享れる1、97123Mよる加熱と同時に送風機およ
び冷却機からの冷却空気は、Aお工びB冷却流体併給j
als25および33の孔26および35を通りてベル
ジャ14お工びランプ23に吹キつけられ、ランプ23
とベルジャ14を冷却した後ベルジャ14に沿って下降
し、排気i°タクト1から排気「122にエリ強制的に
排気される。この風量は石英ベルジャ14の大きさによ
るが数10−7分から数10nrr?/分と極めて大量
であるが、排気卓。
At this time, H2 gas is directly ejected from the inner tube 17 to fill the upper space of the bell jar 14 with H2 gas, thereby cooling the upper wall surface of the bell jar 14 and preventing contact of the reaction gas with the upper wall surface. These gases are then discharged from the holes 19B of the base plate 16. At this time, the waste goes around to the cessation part and decorates the waste, allowing smooth discharge without disturbing the flow of waste inside the bell jar 14. At the same time as heating by 1,97123M, cooling from the blower and cooler is achieved. Air is supplied by A, B, and cooling fluid.
The bell jar 14 is sprayed through the holes 26 and 35 of als 25 and 33 onto the lamp 23, and the lamp 23
After cooling the bell jar 14, it descends along the bell jar 14 and is forcibly exhausted from the exhaust tact 1 to the exhaust 122.The air volume varies from several tens to seven minutes to several minutes, depending on the size of the quartz bell jar 14. Although it is extremely large at 10nrr?/min, it is an exhaust table.

クト21はベルジャ14のエアを囲んで円周上に大きい
ため排気抵抗は小さく排気管22から吸引することに工
り円滑な排気が可能である。
Since the pipe 21 surrounds the air of the bell jar 14 and is large in circumference, the exhaust resistance is small, and suction from the exhaust pipe 22 allows smooth exhaust.

一定時間気相成長が行わnた後ランプ23を消して加熱
を停止すると共に、両管17および18からH2ガスの
みを噴出させて反応ガスのパージを行いながらベルジャ
14を介してウェハ12を冷却し、次論でH2ガスを停
止してN2ガスを噴出することにエリベルジャ14内?
N2ガスにする。最後にベルジャ14等を昇降等の機構
28にエフ上昇させると共にランプハウス24を開いて
ウェハ12を取り出せば一連の気相成長作業は終了する
u7′xおベルジャ】4の洗浄が必要な場合はベルジャ
14を上昇後昇降および回転機構28にエフ側方へ旋回
させた後、下降させて台(図示せず)上に着床させ、ベ
ルジャ14を把持具30から離脱して4r−Ey洗浄す
る。
After vapor phase growth has been carried out for a certain period of time, the lamp 23 is turned off to stop heating, and the wafer 12 is cooled via the bell jar 14 while only H2 gas is jetted out from both tubes 17 and 18 to purge the reaction gas. However, in the next discussion, will we stop the H2 gas and blow out the N2 gas inside Eliberja 14?
Use N2 gas. Finally, the series of vapor phase growth operations is completed by raising the bell jar 14 etc. to the elevating mechanism 28, opening the lamp house 24, and taking out the wafer 12.If cleaning of the bell jar 4 is required, After the bell jar 14 is raised, it is rotated to the F side by the lifting and rotating mechanism 28, and then lowered to land on a stand (not shown), and the bell jar 14 is separated from the gripping tool 30 and washed 4r-Ey. .

〔発明の効果〕〔Effect of the invention〕

本発明の気相匠長装置は、サセプタ組立体を下方から駆
動する1式において、ベルジャの周囲に配置されるラン
グハウスを上昇させずに一部を外せた後手前側のランプ
ハウスを外方1C開くことにより、サセプタ組立体の外
周面に手が容易にとど〈几めウェハの着脱は極めて簡便
である利点を有する。
The vapor phase master device of the present invention is a set that drives the susceptor assembly from below, and the lamp house on the rear front side can be removed from the outside without raising a part of the lung house arranged around the bell jar. By opening 1C, the hand can easily reach the outer peripheral surface of the susceptor assembly, which has the advantage that attachment and detachment of the wafer is extremely simple.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例を示し第1図は断面図、第2図に
fJ1図の2−2線断面図である。 11・・・サセプタ組立体、12・・・ウェハ、13・
・・回転軸、14・・・ベルジャ、15・・・円筒体、
16・・・ペースプレート、17・・・内管、18・・
・外管、23・・・ランプ、24・・・ランプハウス、
25.33・・・冷却流体供給部、28・・・昇降およ
び回転機構。
The drawings show one embodiment of the present invention, and FIG. 1 is a sectional view, and FIG. 2 is a sectional view taken along the line 2-2 of the fJ1 diagram. 11... Susceptor assembly, 12... Wafer, 13...
... Rotating shaft, 14... Bell jar, 15... Cylindrical body,
16... pace plate, 17... inner tube, 18...
・Outer tube, 23... lamp, 24... lamp house,
25.33...Cooling fluid supply unit, 28...Elevating and rotating mechanism.

Claims (1)

【特許請求の範囲】 1、ベースプレートと、同ベースプレートを貫通して上
方に伸びる回転軸と、同回転軸に取付られたバレル型の
サセプタ組立体と、下端が前記ベースプレートに密封可
能になされ前記サセプタ組立体の周囲に反応室を形成す
るベルジャと、同ベルジャの昇降機構と、前記ベルジャ
の外方を取巻いて位置し前記サセプタ組立体のサセプタ
に対向すべく設けられた複数のランプハウスとからなり
、該ランプハウスのうちのいくつかが外方へ開き得るよ
うに構成されていることを特徴とする気相成長装置。 2、ベルジャの略半周部分に対応するランプハウスが観
音開きになるよう前記略半周部分の中央のランプハウス
間が切離し可能に形成され、その左右のランプハウス間
が揺動可能に連結されていることを特徴とする特許請求
の範囲第1項記載の気相成長装置。
[Scope of Claims] 1. A base plate, a rotating shaft extending upward through the base plate, a barrel-shaped susceptor assembly attached to the rotating shaft, and a lower end of the susceptor whose lower end is sealable to the base plate. A bell jar forming a reaction chamber around the assembly, an elevating mechanism for the bell jar, and a plurality of lamp houses located surrounding the outside of the bell jar and facing the susceptor of the susceptor assembly. A vapor phase growth apparatus characterized in that some of the lamp houses are configured to be able to open outward. 2. The lamp houses corresponding to approximately half the circumference of the bell jar are formed so that they can be separated from each other in the center of the approximately half circumference, and the lamp houses on the left and right sides thereof are connected so as to be swingable. A vapor phase growth apparatus according to claim 1, characterized in that:
JP20947584A 1984-10-05 1984-10-05 KISOSEICHOSOCHI Expired - Lifetime JPH0249280B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20947584A JPH0249280B2 (en) 1984-10-05 1984-10-05 KISOSEICHOSOCHI

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20947584A JPH0249280B2 (en) 1984-10-05 1984-10-05 KISOSEICHOSOCHI

Publications (2)

Publication Number Publication Date
JPS6186495A true JPS6186495A (en) 1986-05-01
JPH0249280B2 JPH0249280B2 (en) 1990-10-29

Family

ID=16573462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20947584A Expired - Lifetime JPH0249280B2 (en) 1984-10-05 1984-10-05 KISOSEICHOSOCHI

Country Status (1)

Country Link
JP (1) JPH0249280B2 (en)

Also Published As

Publication number Publication date
JPH0249280B2 (en) 1990-10-29

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