JPS6183617A - Oxidation of si by multiple laser beam radiation - Google Patents
Oxidation of si by multiple laser beam radiationInfo
- Publication number
- JPS6183617A JPS6183617A JP20092984A JP20092984A JPS6183617A JP S6183617 A JPS6183617 A JP S6183617A JP 20092984 A JP20092984 A JP 20092984A JP 20092984 A JP20092984 A JP 20092984A JP S6183617 A JPS6183617 A JP S6183617A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- oxidation
- laser
- ultraviolet
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Silicon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、電子デバイス製造グミセスに用いるＳｌ酸化
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a Sl oxidation method used in a gummy process for manufacturing electronic devices.
（従来技術）
従来のＳｌ酸化法は、Ｓｉを酸化性の雰囲気にさらして
炉の中で加熱する方法が一般的である。(Prior Art) A conventional method for oxidizing Si is generally a method in which Si is exposed to an oxidizing atmosphere and heated in a furnace.
（徳山、ＭＯＳデバイス、エレクトロニクス技術全書、
１０７−１２６．１９７３ ）酸化法は、酸化温度によ
って２種類に分けられ、酸化温度９００℃〜１２００℃
の場合は高温酸化、７００℃以下の場合は低温酸化と呼
ばれている。(Tokuyama, MOS devices, electronics technology complete book,
107-126.1973) Oxidation methods are divided into two types depending on the oxidation temperature.
When the temperature is 700°C, it is called high-temperature oxidation, and when it is below 700°C, it is called low-temperature oxidation.
（発明が解決しようとする問題点）
高温酸化の場合には、５ｔｏ２／ｓｔ界面準位が少ない
反面、Ｓｉ中に拡散されている不純物のプロファイルが
変化し易い。低温酸化の場合には拡散不純物のプロファ
イルを保ったｔま工程を進めることができるが、５ｔｏ
２７ｓｔ界間準位が多く形成される。(Problems to be Solved by the Invention) In the case of high-temperature oxidation, although there are fewer 5to2/st interface states, the profile of impurities diffused into Si tends to change. In the case of low-temperature oxidation, it is possible to proceed with the process for several times while maintaining the profile of diffused impurities, but
Many 27th inter-field levels are formed.
（０’Ｈａｎｌｏｎ 、アプライド・フィジクス・レタ
ー（Ａｐｐｌ、Ｐｈｙｍ、Ｌ旬ｔｔ、 １８巻１９７１
年５５４ページ））。(0'Hanlon, Applied Physics Letters, Volume 18, 1971
554 pages)).
第２図中２１は、従来法による１時間の低温ドライ酸化
後のＳｔ／５ＩＯ２界面における欠陥密度を示すＥＳＲ
スペクトルである。また高温酸化（１２００℃）の場合
には、ドライ酸素中で１０００Ｘを酸化するの薄い膜を
得る点では有用であるが、一般の酸化には不適当である
。第３図は、従来法による高温酸化（１２００℃）の場
合と、同じ〈従来法による低温酸化（７００℃）の場合
とについて、それぞれの場合の酸化時間と酸化膜厚との
関係を示したものである。３１は高温酸化の場合、３２
は低温酸化の場合を示している。21 in Figure 2 indicates the ESR defect density at the St/5IO2 interface after 1 hour of low-temperature dry oxidation using the conventional method.
It is a spectrum. Further, in the case of high temperature oxidation (1200° C.), oxidation at 1000× in dry oxygen is useful in obtaining a thin film, but it is unsuitable for general oxidation. Figure 3 shows the relationship between oxidation time and oxide film thickness in the case of high-temperature oxidation (1200°C) using the conventional method and the case of low-temperature oxidation (700°C) using the same conventional method. It is something. 31 is 32 in the case of high temperature oxidation
shows the case of low temperature oxidation.
このように、従来の酸化方法によれば、５ｉＡ１０２界
面準位の少ない酸化膜を不純物グロファイルが変化しな
いような低温で作ることができず、また低温の酸化では
酸化時間に長時間を要するという欠点があった。Thus, according to conventional oxidation methods, it is not possible to create an oxide film with few 5iA102 interface states at a low temperature where the impurity profile does not change, and low-temperature oxidation requires a long oxidation time. There were drawbacks.
本発明は、Ｓｉ表面の酸化において、Ｓｉ基板を６００
℃以上の高温に加熱せずに酸化し、５１０２／Ｓｔ界面
単位の少ない酸化膜を、従来の低温酸化よシも短かい時
間で形成する方法を提供することを目的とする。In the present invention, in the oxidation of the Si surface, the Si substrate is
It is an object of the present invention to provide a method of oxidizing without heating to a high temperature of .degree.
（問題点を解決するための手段）
本発明は、酸素ガス雰囲気中にさらされ、室温または７
００℃以下に加熱されている Ｓｉの表面に、Ｃ０２レ
ーザー金照射すると同時に、ＸｅＢｒエキシマレーザ−
１ＸｅＣＬエキシマレーザ−１ＸｅＦエキシマレーザ−
またはＵＶランプ光を照射し、Ｓｉ基板の加熱を従来の
低温酸化よシも低い６００℃以下に抑えながら従来の低
温酸化よシも短かい時間でＳｉ表面を酸化することを特
徴とする多重レーザービーム照射によるＳｉ酸化法であ
る。本発明によれば、Ｓｔ／ｓｔｏ□界面準位の少ない
酸化膜を得ることができる。(Means for Solving the Problems) The present invention is designed to be exposed to an oxygen gas atmosphere at room temperature or at 70°C.
The surface of Si heated to below 00°C is irradiated with C02 laser gold and at the same time XeBr excimer laser
1XeCL excimer laser - 1XeF excimer laser
Alternatively, a multi-laser method that irradiates UV lamp light and oxidizes the Si surface in a shorter time than conventional low-temperature oxidation while suppressing the heating of the Si substrate to 600°C or less, which is lower than conventional low-temperature oxidation. This is a Si oxidation method using beam irradiation. According to the present invention, an oxide film with few St/sto□ interface states can be obtained.
以下に本発明方法を具体的に説明するヶまず、１気圧の
酸素ガス雰囲気中にあるｓｉ基板をヒーターによって６
００℃以下に加熱する。このような装置中のＳｔ基板に
対し、Ｃ０２レーザーから出た赤外レーザービームを照
射する。赤外レーｆ −ヒー ムの波長は５ｉ−０ボン
ドの振動エネルギーと一致する９、２６μｍとする。こ
の赤外レーザービームの照射によシ、形成された５ＩＯ
２膜中でのＳｉ−０結合の振縮にエネルギーが与えられ
酸化膜中のＯ原子の移動が促進されるため、界面での酸
化反応が加速される。さらに同時にエキシマレーザ−か
ら出た紫外レーザービームまたはＵＶランデ光から出た
紫外光を、Ｓｉ基板に照射する。紫外レーザービームは
、ＸｅＣｔエキシマレーザ−光（３０８ｎｍ） ’！た
はＸｅＦエキシマレーザー光（３５２ｎｍ）またはＸｅ
Ｂｒエキシマレーザ−光（２８２ｎｍ）である。ＵＶラ
ンプ光は、Ｘｅ −Ｈｇランプを用いた場合２００〜４
２０ｎｍである。これらの紫外レーザービームの波長で
Ｓｉは高い吸収係数（１５〜２０×１０ｃｒ１ｔ）持つ
反面、５１０２はこれらの波長をほとんど透過させる。The method of the present invention will be specifically explained below. First, a Si substrate in an oxygen gas atmosphere of 1 atm is heated to 6.
Heat to below 00°C. The St substrate in such an apparatus is irradiated with an infrared laser beam emitted from a C02 laser. The wavelength of the infrared f-beam is 9.26 μm, which matches the vibrational energy of the 5i-0 bond. 5IO formed by irradiation with this infrared laser beam
Energy is given to the vibration of the Si-0 bond in the two films, promoting the movement of O atoms in the oxide film, so that the oxidation reaction at the interface is accelerated. Furthermore, at the same time, the Si substrate is irradiated with an ultraviolet laser beam emitted from an excimer laser or ultraviolet light emitted from UV Lande light. The ultraviolet laser beam is XeCt excimer laser light (308 nm)'! or XeF excimer laser light (352 nm) or Xe
Br excimer laser light (282 nm). UV lamp light is 200~4 when using a Xe-Hg lamp.
It is 20 nm. While Si has a high absorption coefficient (15 to 20×10 crlt) at the wavelengths of these ultraviolet laser beams, 5102 almost transmits these wavelengths.
このため、照射した紫外レーザービームは形成された５
ＩＯ２膜中を透過し、５１０２／ｓｌ界面のＳｉで強く
吸収される。For this reason, the irradiated ultraviolet laser beam forms 5
It passes through the IO2 film and is strongly absorbed by the Si at the 5102/sl interface.
この吸収によってｓｉの電子状態が励起されるため、界
面で００原子との反応が促進される。また、ＳｔＫエネ
ルギーが与えられているために結晶欠陥による界面準位
が形成されにくい。このように、赤外レーザービームと
紫外レーザービームとを同時にＳｉ表面に照射すること
により、低温酸化であシながら従来の低温酸化よシも速
く、かつＳｉ０２／Ｓｌ界面の界面準位の少ない酸化が
可能となる。This absorption excites the electronic state of si, promoting the reaction with the 00 atom at the interface. Furthermore, since StK energy is given, interface states due to crystal defects are less likely to be formed. In this way, by simultaneously irradiating the Si surface with an infrared laser beam and an ultraviolet laser beam, it is possible to achieve low-temperature oxidation that is faster than conventional low-temperature oxidation and has fewer interface states at the Si02/Sl interface. becomes possible.
（実施例）
以下に本発明の実施例を図によりて示す。Ｓｉ基板１１
をヒーター１２によって６００℃以下に加熱する。この
時装置内はガス導入管１３から導入された酸素分子１４
で１気圧に満たされている。このような装置内のＳｉ基
板１１に対し、ＣＯ２レーザ−１５から出た赤外レーザ
ービーム１７ （９，２６μｔｒＬ）を、赤外線透過窓
１６を通して照射する。また同時に、紫外透過窓１９を
通してエキシマレーザ−１８から出た上記の方法で低温
酸化（６００℃）を１時間行った場合の試料について、
ＥＳＲで測定したＳｉＯ２／Ｓｉ界面の欠陥量を第２図
中２２に示す。２１にて示す従来の低温酸化の場合の欠
陥量に比べ、その量が大幅に減少していることが判る。(Example) Examples of the present invention will be shown below using figures. Si substrate 11
is heated to 600° C. or less by the heater 12. At this time, the inside of the device contains oxygen molecules 14 introduced from the gas introduction pipe 13.
It is filled with 1 atm pressure. An infrared laser beam 17 (9.26 μtrL) emitted from a CO2 laser 15 is irradiated onto the Si substrate 11 in such an apparatus through an infrared transmission window 16. At the same time, regarding the sample that was emitted from the excimer laser 18 through the ultraviolet transmission window 19 and subjected to low-temperature oxidation (600°C) for 1 hour using the above method,
The amount of defects at the SiO2/Si interface measured by ESR is shown at 22 in FIG. It can be seen that the amount of defects is significantly reduced compared to the amount of defects in the case of conventional low-temperature oxidation shown in No. 21.
また本発明の方法で低温酸化（６００℃）した場合の酸
化時間と酸化膜厚の関係を第３図・中３３にて示す。図
に明らかなとおシ、従来の低温酸化の場合を示した３２
に比べ、酸化速度が大幅に速くなっている。Further, the relationship between the oxidation time and the oxide film thickness when low-temperature oxidation (600° C.) is performed by the method of the present invention is shown in FIG. 3, middle 33. As is clear from the figure, 32 shows the case of conventional low-temperature oxidation.
The oxidation rate is significantly faster than that of
（発明の効果）
以上に述べた通シ、本発明によれば、Ｓｉ０２／Ｓｔ界
面の欠陥量を少なく抑えながら不純物グロファイルの変
化しない低温酸化を行うことが可能であリ、またその酸
化を従来の低温酸化の場合よシも高速で行うことができ
る。したがって、本発明の方法を電子デバイスゾロセス
中に用いた場合にその効果は多大であること明らかであ
る。(Effects of the Invention) As described above, according to the present invention, it is possible to perform low-temperature oxidation without changing the impurity profile while suppressing the amount of defects at the Si02/St interface. It can be performed faster than conventional low-temperature oxidation. Therefore, it is clear that when the method of the present invention is used in electronic devices, the effects are great.
第１図は本発明の実施例を示す構成図、第２図は従来の
方法及び本発明の方法を用いて酸化を行った場合の５ｓ
ｏ２／Ｓｔ界面の欠陥量を表すＥＳＲスペクトルを示す
図、第３図は従来の方法及び本発明の方法を用いて酸化
した場合の酸化時間と酸化膜厚の関係を示す図である。
１１・・・Ｓｉ基板、１２・・・基板加熱ヒーター、１
３・・・ガス導入口、１４・・・酸素分子、１５・・・
ＣＯ２レーザー１１６・・・赤外線透過窓、１７・・・
赤外レーザービーム、１８・・・エキシマレーザ−１１
９・・・紫外線透過窓、１１０・・・紫外レーザービー
ム。
酢化温度（°Ｃ）Fig. 1 is a block diagram showing an embodiment of the present invention, and Fig. 2 shows 5s of oxidation using the conventional method and the method of the present invention.
FIG. 3 is a diagram showing an ESR spectrum representing the amount of defects at the o2/St interface, and FIG. 3 is a diagram showing the relationship between oxidation time and oxide film thickness when oxidized using the conventional method and the method of the present invention. 11...Si substrate, 12...Substrate heating heater, 1
3... Gas inlet, 14... Oxygen molecules, 15...
CO2 laser 116...Infrared transmission window, 17...
Infrared laser beam, 18...excimer laser-11
9... Ultraviolet transmission window, 110... Ultraviolet laser beam. Acetylation temperature (°C)
Claims (1)
＿２レーザーを照射すると同時にＸｅＢｒエキシマレー
ザー、ＸｅＣｌエキシマレーザー、ＸｅＦエキシマレー
ザーまたはＵＶランプ光を照射してＳｉ表面を酸化する
ことを特徴とする多重レーザービーム照射によるＳｉ酸
化法。(1) CO on the surface of Si exposed to an oxygen gas atmosphere
A Si oxidation method using multiple laser beam irradiation, characterized in that the Si surface is oxidized by irradiating a XeBr excimer laser, a XeCl excimer laser, a XeF excimer laser, or a UV lamp light at the same time as _2 laser irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20092984A JPS6183617A (en) | 1984-09-26 | 1984-09-26 | Oxidation of si by multiple laser beam radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20092984A JPS6183617A (en) | 1984-09-26 | 1984-09-26 | Oxidation of si by multiple laser beam radiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6183617A true JPS6183617A (en) | 1986-04-28 |
Family
ID=16432628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20092984A Pending JPS6183617A (en) | 1984-09-26 | 1984-09-26 | Oxidation of si by multiple laser beam radiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6183617A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002076666A3 (en) * | 2001-03-22 | 2004-02-12 | Xsil Technology Ltd | A laser machining system and method |
-
1984
- 1984-09-26 JP JP20092984A patent/JPS6183617A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002076666A3 (en) * | 2001-03-22 | 2004-02-12 | Xsil Technology Ltd | A laser machining system and method |
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