JPH08220731A - Production of mask for exposure and apparatus for production therefor - Google Patents

Production of mask for exposure and apparatus for production therefor

Info

Publication number
JPH08220731A
JPH08220731A JP2676395A JP2676395A JPH08220731A JP H08220731 A JPH08220731 A JP H08220731A JP 2676395 A JP2676395 A JP 2676395A JP 2676395 A JP2676395 A JP 2676395A JP H08220731 A JPH08220731 A JP H08220731A
Authority
JP
Japan
Prior art keywords
phase shift
shift film
film
transmittance
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2676395A
Other languages
Japanese (ja)
Other versions
JP3286103B2 (en
Inventor
Takayuki Iwamatsu
孝行 岩松
Kenji Kawano
健二 川野
Shinichi Ito
信一 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2676395A priority Critical patent/JP3286103B2/en
Publication of JPH08220731A publication Critical patent/JPH08220731A/en
Application granted granted Critical
Publication of JP3286103B2 publication Critical patent/JP3286103B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To provide a process for producing a mask for exposure capable of preventing the variations in physical properties of a phase shift film accompanying irradiation with exposing light or lapse of time and contributing to an improvement in the transfer accuracy of patterns. CONSTITUTION: An SiN phase shift film 502 is formed on a transparent substrate 501 made of quartz and thereafter, the reforming and stabilizing treatment of the phase shift film 502 is executed by oxidizing the film in an ozone atmosphere without exposure of the phase shift film 502 to the atm. and further, uniformly irradiating the film with far UV rays by a low-pressure mercury lamp, by which the optical constant of the phase shift film 502 is adjusted to a desired phase difference and transmittance in the process for producing the mask for exposure having the phase shift film. A resist 503 is then applied on the phase shift film 502 and resist patterns are formed by exposing the resist 503. The exposed parts of the phase shift film 502 are then removed with the resist patterns as a mask.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体装置の製造にお
けるリソグラフィー工程で用いられる露光用マスクの製
造技術に係わり、特に位相シフト膜の改善をはかった露
光用マスクの製造方法及び製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for manufacturing an exposure mask used in a lithography process in manufacturing a semiconductor device, and more particularly to a method and a device for manufacturing an exposure mask with an improved phase shift film.

【０００２】[0002]

【従来の技術】近年、半導体産業ではＩＣの高集積化に
伴い、より微細なパターンを作成していくことが要求さ
れている。これを実現するには、リソグラフィーにおけ
る分解能の向上が必要であり、そのための手段として位
相シフト法が提案されている。また、この分野ではＬＳ
Ｉの高集積化が進むにつれ、更に微細なパターン形成技
術を達成していくために露光光源波長をより短くしてい
く方向にある。これは、リソグラフィーの分解能が波長
に比例することによる。１ＧビットＤＲＡＭに対しては
０．２μｍ、４ＧビットＤＲＡＭに対しては０．１μｍ
の微細パターンが要求されており、これらのパターンを
実現するにはＫｒＦ（２４８ｎｍ）或いはそれ以下の波
長の光源を露光の際に用いる必要がある。2. Description of the Related Art In recent years, in the semiconductor industry, with the high integration of ICs, it is required to create finer patterns. In order to realize this, it is necessary to improve the resolution in lithography, and a phase shift method has been proposed as a means therefor. Also, in this field LS
As the high integration of I progresses, the wavelength of the exposure light source tends to be shortened in order to achieve a finer pattern forming technique. This is because the resolution of lithography is proportional to the wavelength. 0.2 μm for 1 Gbit DRAM and 0.1 μm for 4 Gbit DRAM
Fine patterns are required, and in order to realize these patterns, it is necessary to use a light source having a wavelength of KrF (248 nm) or shorter at the time of exposure.

【０００３】しかし、露光用光源を短波長化すると、よ
り多大なエネルギーが今後位相シフトマスクに供給され
てゆくことになる。このとき、露光光照射によりマスク
材料（位相シフト膜）の光学特性（屈折率，消衰係数）
等が変化し、露光前に設定された所望の状態が変化し、
焦点深度の劣化を引き起こすなどの問題を生じることが
予想される。However, if the wavelength of the exposure light source is shortened, a larger amount of energy will be supplied to the phase shift mask in the future. At this time, the optical characteristics (refractive index, extinction coefficient) of the mask material (phase shift film) due to exposure light irradiation
Etc., the desired state set before exposure changes,
It is expected that problems such as deterioration of the depth of focus will occur.

【０００４】本発明者らは、位相シフト膜の露光時の変
化を抑えるためには光，熱，反応ガスを用いた処理を行
い、位相シフト膜を光学的に安定にする手法を提案して
きた（特願平５−３０４１８６号）。しかし、これらの
処理を膜作成後、大気中に一度出した膜に対して行う
と、大気中の不純物（アンモニアや水など）により膜が
汚染された後に光学的安定性を求めることになり、プロ
セスを経て最終的に得られる光学特性に再現性が無いと
いう問題が生じた。汚染は、膜中のＳｉのダングリング
ボンドに大気中の不純物が引き寄せられ、吸着或いは結
合状態に変化が生じるために起こると考えられる。ま
た、位相シフト膜として用いるＳｉＮｘ膜はアンモニア
を引きつけ易いため、レジスト塗布の際の密着性の低下
なども問題を引き起こしていた。The present inventors have proposed a method of optically stabilizing the phase shift film by carrying out a treatment using light, heat and a reaction gas in order to suppress the change of the phase shift film during exposure. (Japanese Patent Application No. 5-304186). However, if these treatments are performed on the film once exposed to the air after the film formation, optical stability will be required after the film is contaminated by impurities in the air (ammonia, water, etc.), There was a problem that the optical characteristics finally obtained through the process were not reproducible. It is considered that the contamination occurs because impurities in the atmosphere are attracted to the Si dangling bonds in the film, and the adsorption or bonding state changes. Further, since the SiNx film used as the phase shift film easily attracts ammonia, it causes a problem such as a decrease in adhesion at the time of applying the resist.

【０００５】図１０に、ＤＣ反応性スパッタリング法に
より作成された位相シフト膜（ＳｉＮｘ）の膜中に含ま
れるアンモニア量の経時変化を示す。同様に、図１１に
ＳｉＮｘ膜中水分量の経時変化を示す。このように膜作
成後に大気中に放置することにより膜中アンモニア量，
水分量が変化していることが分かる。即ちこの材料を位
相シフト膜として用いる場合、成膜後から処理に至る時
間により膜特性に変化が生じるという問題があった。こ
の現象を図１２に示す。図１２は、ＳｉＮｘ膜の透過率
の経時変化を示している。大気中への放置によりＳｉＮ
ｘ膜の透過率が変化することが分かる。FIG. 10 shows a change with time in the amount of ammonia contained in the film of the phase shift film (SiNx) formed by the DC reactive sputtering method. Similarly, FIG. 11 shows the change over time in the amount of water in the SiNx film. In this way, by leaving the film in the atmosphere after forming it, the amount of ammonia in the film,
It can be seen that the water content is changing. That is, when this material is used as a phase shift film, there is a problem that the film characteristics change depending on the time from the film formation to the processing. This phenomenon is shown in FIG. FIG. 12 shows the change over time in the transmittance of the SiNx film. SiN when left in the atmosphere
It can be seen that the transmittance of the x film changes.

【０００６】位相シフトマスクにおいては透過率，位相
は非常に重要なパラメータである。透過率，位相の経時
変化は、位相シフトマスク性能を劣化させ、焦点深度の
減少やパターン寸法の変動などデバイス作成で大きな問
題となっていた。In the phase shift mask, the transmittance and the phase are very important parameters. The change in transmittance and phase with time deteriorates the performance of the phase shift mask, and has been a serious problem in device fabrication such as a reduction in depth of focus and a change in pattern size.

【０００７】[0007]

【発明が解決しようとする課題】このように従来、位相
シフトマスクにおいては、露光時の光照射又は時間経過
に伴い位相シフト膜の物性変動が起こり、位相シフト膜
の位相差及び透過率が所望値からずれる問題があり、こ
れが転写レジストパターン形状の劣化や焦点深度低下を
招く要因となっていた。また、特願平５−３０４１８６
号のように膜の安定化処理を行っても、一旦大気中に晒
された膜では十分な効果が得られないことが分かった。As described above, in the conventional phase shift mask, the physical properties of the phase shift film fluctuate with light irradiation during exposure or the passage of time, and the phase difference and transmittance of the phase shift film are desired. There is a problem of deviation from the value, which has been a factor causing deterioration of the transfer resist pattern shape and reduction of the depth of focus. Also, Japanese Patent Application No. 5-304186
It has been found that even if the film is stabilized as described in No. 3, a sufficient effect cannot be obtained with the film once exposed to the atmosphere.

【０００８】本発明は、上記事情を考慮して成されたも
ので、その目的とするところは、露光光の照射又は時間
経過に伴う位相シフト膜の物性変動を防止することがで
き、パターン転写精度の向上に寄与し得る露光用マスク
の製造方法及び製造装置を提供することにある。The present invention has been made in consideration of the above circumstances, and an object thereof is to prevent changes in physical properties of a phase shift film due to exposure light irradiation or a lapse of time, and to perform pattern transfer. An object of the present invention is to provide an exposure mask manufacturing method and manufacturing apparatus that can contribute to improvement in accuracy.

【０００９】[0009]

【課題を解決するための手段】上記課題を解決するため
に本発明は、次のような構成を採用している。即ち、本
発明（請求項１）は、透光性基板上に少なくとも位相シ
フト膜から成るパターンを有する露光用マスクの製造方
法において、前記透光性基板上に前記位相シフト膜を成
膜した後、大気に晒すことなく前記位相シフト膜の元素
組成又は光学定数（屈折率又は消衰係数）を変化させ、
所望の位相差と透過率に調整することを特徴とする。In order to solve the above problems, the present invention employs the following configurations. That is, the present invention (Claim 1) is a method for manufacturing an exposure mask having a pattern composed of at least a phase shift film on a transparent substrate, after forming the phase shift film on the transparent substrate. , Changing the elemental composition or optical constants (refractive index or extinction coefficient) of the phase shift film without exposing to the atmosphere,
It is characterized by adjusting to a desired phase difference and transmittance.

【００１０】ここで、本発明の望ましい実施態様として
は、次のものが上げられる。 (1) 位相シフト膜の安定化処理を行い所望の位相差と透
過率に調整した後に、位相シフト膜上に感光性樹脂膜を
形成し、次いで感光性樹脂膜を放射線又は荷電粒子線に
より露光して感光性樹脂パターンを形成し、次いで感光
性樹脂パターンをマスクに前記位相シフト膜の露出して
いる部分を除去し、しかるのち感光性樹脂パターンを除
去すること。 (2) 位相シフト膜の光学定数を変化させる工程は、真空
中，希ガス中又は反応ガス中にて光，熱，電磁波又は粒
子線を用いることにより成されること。 (3) 光源として重水素ランプ，Ｘｅランプ，エキシマレ
ーザ光源を単独若しくは組み合わせて用いること。ま
た。反応ガスとしては水素，窒素，酸素，フッ素，オゾ
ンやそれらのラジカルを用いること。 (4) 位相シフト膜は、半透明膜であること。The following are preferred embodiments of the present invention. (1) After stabilizing the phase shift film and adjusting it to the desired phase difference and transmittance, form a photosensitive resin film on the phase shift film, and then expose the photosensitive resin film with radiation or charged particle beams. Then, a photosensitive resin pattern is formed, then the exposed portion of the phase shift film is removed using the photosensitive resin pattern as a mask, and then the photosensitive resin pattern is removed. (2) The step of changing the optical constants of the phase shift film should be performed by using light, heat, electromagnetic waves or particle beams in a vacuum, a rare gas or a reaction gas. (3) Use a deuterium lamp, Xe lamp, or excimer laser light source individually or in combination as a light source. Also. Use hydrogen, nitrogen, oxygen, fluorine, ozone or their radicals as the reaction gas. (4) The phase shift film should be a semitransparent film.

【００１１】また、本発明（請求項５）は、位相シフト
膜を有する露光用マスクの製造装置において、透光性基
板上に位相シフト膜を形成する成膜室と、この成膜室と
ゲートバルブを介して連設され、前記位相シフト膜の形
成された透光性基板を大気に晒すことなく搬入して、該
位相シフト膜の安定化処理を行う処理室とを具備してな
り、前記処理室では、前記位相シフト膜の元素組成又は
光学定数を変化させて所望の位相差と透過率に調整する
ことを特徴とする。According to the present invention (claim 5), in a manufacturing apparatus for an exposure mask having a phase shift film, a film forming chamber for forming the phase shift film on a transparent substrate, the film forming chamber and the gate. And a processing chamber that is continuously provided via a valve, carries in the light-transmissive substrate on which the phase shift film is formed without exposing to the atmosphere, and performs a stabilization process on the phase shift film. In the processing chamber, the element composition or the optical constant of the phase shift film is changed to adjust it to a desired phase difference and transmittance.

【００１２】[0012]

【作用】半透明な位相シフト膜では殆どの場合、所望の
光学定数を得るため、中間的な組成のアモルファス膜に
せざるを得ない。そして、作成された膜の結合状態は非
常に複雑になっている。例えば、アモルファスＳｉの場
合ではスパッタリングによりＳｉ−Ｓｉの結合以外に不
安定な結合手が多数形成され、この部分で反応性があり
不安定な要因になっている。この問題を解決するには、
例えばＳｉの場合、水素を添加することによりＳｉ−Ｈ
の結合を形成しダングリングボンドを減少させることが
良く知られている。このダングリングボンドは光，熱，
反応ガスによっても減らすことが可能である。In most cases, the semitransparent phase shift film must be an amorphous film having an intermediate composition in order to obtain a desired optical constant. And, the bonding state of the formed film is very complicated. For example, in the case of amorphous Si, many unstable bonds other than the Si—Si bond are formed by sputtering, and this part is reactive and unstable. To solve this problem,
For example, in the case of Si, by adding hydrogen, Si--H
It is well known to form a bond and reduce dangling bonds. This dangling bond is light, heat,
It can also be reduced by the reaction gas.

【００１３】光の場合、光の持つエネルギーＥは、その
波長λと次の関係がある。 Ｅ＝ｈｃ／λ ‥‥（１） ｈ：プランク定数（6.626 ×１０-26Ｊ・sec ） ｃ：光速（2.998 ×１０10cm/ sec ） 例えば、波長３６５ｎｍの光のエネルギーは約７８ｋｃ
ａｌ／ｍｏｌであり、波長２４８ｎｍのＫｒＦエキシマ
レーザーでは約１１５ｋｃａｌ／ｍｏｌ、波長１９３ｎ
ｍでは約１４８ｋｃａｌ／ｍｏｌとなる。このように、
現在又は将来ＬＳＩを作成するために用いられる光源は
非常に高いエネルギーを有することが分かる。また、元
素の化学結合エネルギーを下記の（表１）に示す。In the case of light, the energy E of light has the following relationship with its wavelength λ. E = hc / λ (1) h: Planck's constant (6.626 × 10 -26 J · sec) c: Speed of light (2.998 × 10 10 cm / sec) For example, the energy of light having a wavelength of 365 nm is about 78 kc.
Al / mol, about 115 kcal / mol and 193 n wavelength for a KrF excimer laser with a wavelength of 248 nm.
It becomes about 148 kcal / mol in m. in this way,
It can be seen that the light sources used to make current or future LSIs have very high energy. The chemical bond energies of the elements are shown in (Table 1) below.

【００１４】[0014]

【表１】 [Table 1]

【００１５】殆どの結合エネルギーはランプで放出され
る光のエネルギー以下であるため、大半の弱い結合につ
いて上記の光照射により解離され、より強い結合状態へ
と再結合することが可能である。従って、物質に高エネ
ルギー光を照射することによって、より強い結合を形成
することができ、これにより露光光に対してその物質の
結合状態をより安定にすることができる。但し、実際の
化合物等では、その物質の結晶構造などによって中間的
な結合を有するため、様々な結合状態が化合物中に存在
している。このため、ある結合状態又は中間的な結合状
態のみを選択的に変化させることができ、それにより光
学定数を所望値に調整することが可能である。Since most of the binding energy is less than the energy of the light emitted from the lamp, most of the weak bonds can be dissociated by the above light irradiation and can be recombined into a stronger bonding state. Therefore, by irradiating the substance with high-energy light, a stronger bond can be formed, which makes the bond state of the substance more stable with respect to exposure light. However, in an actual compound or the like, various bonding states exist in the compound because the compound has an intermediate bond depending on the crystal structure of the substance. Therefore, it is possible to selectively change only a certain binding state or an intermediate binding state, and thereby it is possible to adjust the optical constant to a desired value.

【００１６】それには、その結合の吸収スペクトルに相
当するエネルギーを与えればよい。その物質の吸収スペ
クトルがブロードである場合は、そのエネルギーに相当
する範囲内で適当なエネルギーを選択すればよい（望ま
しくは吸収極大より短波長の光を照射するとよい）。It suffices to apply to it energy corresponding to the absorption spectrum of the bond. When the absorption spectrum of the substance is broad, appropriate energy may be selected within a range corresponding to the energy (preferably irradiation with light having a wavelength shorter than the absorption maximum).

【００１７】また、反応ガスを併用することにより、上
記の反応を効率良く行うことができる。例えば、雰囲気
中に反応ガスとして酸素分子がある場合、これはランプ
からの紫外線（波長１８４．９ｎｍ）により酸素ラジカ
ルＯ（1 Ｄ）や（3 Ｐ）に分解される。また、同時に２
次反応によりオゾン（Ｏ3 ）が生成される。このオゾン
は、低圧水銀ランプ又はＸｅランプからの紫外線照射
（波長２５３．７ｎｍ）により分解され、酸素ラジカル
となる。この２重光励起により有効に酸素ラジカルＯ（
1 Ｄ）を生成することができる。これを化学式で書く
と、以下のようになる。By using a reaction gas in combination, the above reaction can be carried out efficiently. For example, when oxygen molecules are present as a reaction gas in the atmosphere, they are decomposed into oxygen radicals O ( 1 D) and ( 3 P) by ultraviolet rays (wavelength 184.9 nm) from a lamp. Also, 2 at the same time
Ozone (O 3 ) is generated by the next reaction. This ozone is decomposed by irradiation of ultraviolet rays (wavelength 253.7 nm) from a low pressure mercury lamp or a Xe lamp to become oxygen radicals. Oxygen radical O (
1 D) can be generated. When this is written in a chemical formula, it becomes as follows.

【００１８】 Ｏ2 Ｅ（λ＝１８４．９ｎｍ）＋０→Ｏ3 ‥‥（２） Ｏ3 Ｅ（λ＝２５３．７ｎｍ） →Ｏ2 ＋Ｏ* ‥‥（３） このとき発生する酸素ラジカルＯ（1 Ｄ）は、他の酸素
ラジカルに対して活性であり、酸化反応に有効に働く。
これを、例えば位相シフトマスク材料であるＳｉＮｘに
適用すると、膜作成後にこれらの処理を行うことで、窒
素の孤立電子対を酸素ラジカルが酸化し強い結合を作る
ため、短波長光で露光する際の光学定数変化を防止する
ことができる。このように、幾つかの手法を組み合わせ
て活性な結合種を安定なエネルギー準位にすることで、
より安定な位相シフト膜材料を得ることが可能となる。O 2 E (λ = 184.9 nm) + 0 → O 3 (2) O 3 E (λ = 253.7 nm) → O 2 + O * (3) Oxygen radicals O ( 1 D) are active against other oxygen radicals, it acts effectively to oxidation reactions.
If this is applied to, for example, SiNx which is a phase shift mask material, by performing these treatments after film formation, oxygen radicals oxidize the lone electron pair of nitrogen to form a strong bond. It is possible to prevent the change of the optical constants. In this way, by combining several methods to make the active bond species a stable energy level,
It becomes possible to obtain a more stable phase shift film material.

【００１９】上記のことをＳｉＮｘ膜を用いて説明す
る。スパッタリング等で作成されたＳｉＮｘ膜は、Ｓｉ
のダングリングボンドを含むため大気中放置により光学
定数に経時変化が生じる。これを防ぐために光照射によ
ってこのダングリングボンドをより安定な結合にするこ
とで、経時変化を抑えることができる。またこの場合、
ＳｉＮｘ膜中に含まれる窒素の孤立電子対を同時に減少
させることができるため、大気中のアミン等がこの孤立
電子対に引き付けられることにより生じるレジストとの
密着性が悪いという問題を解決することができる。The above will be described using a SiNx film. The SiNx film formed by sputtering is Si
Since it contains dangling bonds, the optical constants change with time when left in the air. In order to prevent this, the dangling bond is made more stable by light irradiation, so that the change over time can be suppressed. Also in this case,
Since the lone electron pair of nitrogen contained in the SiNx film can be reduced at the same time, it is possible to solve the problem of poor adhesion to the resist caused by the attraction of amines and the like in the atmosphere to the lone electron pair. it can.

【００２０】従って、大気中に出す前に上記処理を行う
ことでダングリングボンドを減少させることが可能であ
ると共に、膜中の孤立電子対をも同時に減少させること
で成膜後に大気中でのアミンの付着を抑えることによ
り、レジストとの密着性を向上させることも可能とな
る。これは、ＳｉＮｘに限らずＣｒＦｘなど孤立電子対
を有するものに適用可能である。Therefore, it is possible to reduce the dangling bonds by performing the above-mentioned treatment before exposing to the atmosphere, and at the same time to reduce the lone electron pairs in the film, it is possible to reduce the dangling bond in the atmosphere after the film formation. By suppressing the adhesion of the amine, it becomes possible to improve the adhesion with the resist. This is applicable not only to SiNx but also to those having a lone electron pair such as CrFx.

【００２１】また、上記ＳｉＮｘではＳｉのダングリン
グボンドを例として取り上げたが、他にもＭｏ，Ｃｒ，
Ｆｅ，Ｈｆのように配位子を有する遷移元素又はこれの
シリサイドの酸化物，窒化物，水素化物，炭化物，ハロ
ゲン化物及びこれらの混合物などに対しても、上記処理
により結合をより安定にすることが可能である。In the above SiNx, the dangling bond of Si is taken as an example, but other than Mo, Cr,
The above treatment makes the bond more stable with respect to oxides, nitrides, hydrides, carbides, halides and mixtures of transition elements having a ligand such as Fe and Hf or silicides thereof. It is possible.

【００２２】[0022]

【実施例】以下、本発明の実施例を図面を参照して説明
する。 （実施例１）図１は、本発明の第１の実施例に係わる露
光用マスクの製造装置を説明するためのもので、（ａ）
は基本構成を示す図、（ｂ）は安定化処理部の構成を示
す図である。この装置は、図１（ａ）に示すように、透
明基板に位相シフト膜を形成するための成膜部１０と、
この成膜部１０に連通して設けられ、位相シフト膜が形
成された露光用マスク基板に安定化処理を施すための処
理部２０とから構成されている。また、成膜部１０には
基板を搬入するための基板搬入部３０が接続され、処理
部２０には基板を搬出するための基板搬出部４０が設け
られている。そして、各部３０と１０、１０と２０、２
０と４０の間には、ゲートバルブ５１，５２，５３がそ
れぞれ設置されている。Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 illustrates an exposure mask manufacturing apparatus according to a first embodiment of the present invention.
Is a diagram showing a basic configuration, and (b) is a diagram showing a configuration of a stabilization processing unit. As shown in FIG. 1A, this apparatus includes a film forming unit 10 for forming a phase shift film on a transparent substrate,
The processing unit 20 is provided so as to communicate with the film forming unit 10 and performs a stabilization process on the exposure mask substrate on which the phase shift film is formed. A substrate carry-in unit 30 for carrying in a substrate is connected to the film forming unit 10, and a substrate carry-out unit 40 for carrying out a substrate is provided in the processing unit 20. And each part 30 and 10, 10 and 20, 2
Gate valves 51, 52, and 53 are installed between 0 and 40, respectively.

【００２３】成膜部１０は、通常のスパッタ装置と同様
に構成され、位相シフト膜物質をターゲットとし、スパ
ッタにより基板表面に位相シフト膜を蒸着させるものと
なっている。The film forming section 10 is constructed in the same manner as an ordinary sputtering apparatus, and targets a phase shift film substance to deposit a phase shift film on the surface of a substrate by sputtering.

【００２４】処理部２０は、図１（ｂ）に示すように構
成されている。即ち、チャンバ２１内に基板２２を支持
する回転可能なテーブル２３が設置され、チャンバ２１
の上方には基板２２の表面に光を照射する光照射部２４
が設けられてる。さらに、チャンバ２１の下方には基板
２２に光を照射する透過率測定光照射部２５が設けら
れ、チャンバ２１の上方には透過率測定部２６が設けら
れている。The processing section 20 is constructed as shown in FIG. That is, the rotatable table 23 supporting the substrate 22 is installed in the chamber 21,
A light irradiator 24 that irradiates the surface of the substrate 22 with light above
Is provided. Further, below the chamber 21, a transmittance measuring light irradiation unit 25 that irradiates the substrate 22 with light is provided, and above the chamber 21, a transmittance measuring unit 26 is provided.

【００２５】図２は、処理部２０のより具体的構成を示
す図である。この装置は、露光用マスクに露光光を照射
する部分と、露光用マスク基板の透過率を測定する部分
から構成されている。FIG. 2 is a diagram showing a more specific configuration of the processing section 20. This apparatus comprises a portion for irradiating the exposure mask with exposure light and a portion for measuring the transmittance of the exposure mask substrate.

【００２６】露光用マスク２００には、デバイスパター
ン２０１と透過率モニタエリア２０２が形成されてい
る。光照射装置（第１の光源）２１１から放射された光
は直線偏光フィルタ（偏光板）２１２を介し、露光用マ
スク２００に照射される。なお、光照射装置２１１の光
源には低圧水銀ランプ，高圧水銀ランプ，Ｘｅ−Ｈｇラ
ンプ，重水素ランプ等が用いられ、これらを露光用マス
ク２００の位相シフト膜の吸収帯に合うよう選択すれば
よい。このとき、照射される方向は透明基板から位相シ
フト膜の方向となるように、露光用マスク２００は設置
されている。A device pattern 201 and a transmittance monitor area 202 are formed on the exposure mask 200. The light emitted from the light irradiation device (first light source) 211 is applied to the exposure mask 200 via the linear polarization filter (polarizing plate) 212. A low-pressure mercury lamp, a high-pressure mercury lamp, a Xe-Hg lamp, a deuterium lamp, etc. are used as the light source of the light irradiation device 211, and if these are selected so as to match the absorption band of the phase shift film of the exposure mask 200. Good. At this time, the exposure mask 200 is installed so that the irradiation direction is from the transparent substrate to the phase shift film.

【００２７】また、露光用マスク２００は４端支持によ
りその中心部を回転の軸としてモータ２１３により回転
されており、これにより光照射装置２１１からの光の均
一照射が可能となっている。ここで、本実施例では露光
用マスク２００の４端を固定するようにしているが、周
辺を保持するものであればこれに限るものではない。本
実施例では同心円状で回転するものとしているが、偏心
して回転するものでもよく、さらに偏心と自転運動を同
時に行ってもかまわない。また、均一照射の観点から
は、マスク側ではなく光照射装置側を回転させるように
してもよい。Further, the exposure mask 200 is rotated by a motor 213 with its center portion as a rotation axis by the four-end support, which enables uniform irradiation of light from the light irradiation device 211. Here, in this embodiment, the four ends of the exposure mask 200 are fixed, but the invention is not limited to this as long as it holds the periphery. In the present embodiment, the concentric circles rotate, but they may rotate eccentrically, and eccentricity and rotation may be performed simultaneously. Further, from the viewpoint of uniform irradiation, the light irradiation device side may be rotated instead of the mask side.

【００２８】また、露光用マスクの透過率を測定する部
分は、次のように構成されている。即ち、露光波長のみ
発する透過率モニタ用光源（第２の光源）２１４から発
せられた光は、直線偏光フィルタ２１２と直交する方向
を持つ直線偏光フィルタ２１５を介して透過率モニタエ
リア２０２に照射される。そして、モニタエリア２０２
を通過した光は、直線偏光フィルタ２１５と同方向の直
線偏光フィルタ２１６を介して透過率受光部２１７に入
射される。この透過率受光部２１７はフォトダイオード
等の受光素子からなるもので、従ってモニタ用光源２１
４の発光強度を一定にしておけば、フォトダイオードの
出力からモニタエリア２０２の透過率が測定される。な
お、透過率モニタ用光源側の直線偏光フィルタ２１５は
特に設けなくてもよい。The portion for measuring the transmittance of the exposure mask is constructed as follows. That is, the light emitted from the transmittance monitor light source (second light source) 214 that emits only the exposure wavelength is irradiated to the transmittance monitor area 202 via the linear polarization filter 215 having a direction orthogonal to the linear polarization filter 212. It Then, the monitor area 202
The light that has passed through is incident on the transmittance light receiving portion 217 via the linear polarization filter 216 in the same direction as the linear polarization filter 215. The transmittance light receiving portion 217 is composed of a light receiving element such as a photodiode, and therefore, the monitor light source 21.
If the light emission intensity of No. 4 is kept constant, the transmittance of the monitor area 202 can be measured from the output of the photodiode. The linear polarization filter 215 on the light source side for the transmittance monitor may not be provided.

【００２９】透過率受光部２１７の測定結果は光照射装
置２１１に供給されており、測定結果に応じて照射制御
部２１８を介し光照射装置２１１を制御するものとなっ
ている。具体的には、透過率受光部２１７により最適透
過率が得られた時点で、光照射装置２１１の放射を終了
するものとなっている。The measurement result of the transmittance light receiving unit 217 is supplied to the light irradiation device 211, and the light irradiation device 211 is controlled via the irradiation control unit 218 according to the measurement result. Specifically, the radiation of the light irradiation device 211 is terminated when the transmittance light receiving unit 217 obtains the optimum transmittance.

【００３０】このような構成であれば、光照射装置２１
１からの光照射によって、露光用マスク２００の透明基
板と位相シフト膜との境界部分に前述した安定化層を形
成、又は位相シフト膜に安定化領域を形成することがで
き、露光光照射に伴う位相シフト膜の光学定数変動を防
止することができる。また、本実施例では透過率を測定
する機構を設けているが、直線偏光フィルタ２１２，２
１５，２１６を設け、光照射装置２１１からの光とモニ
タ用光源からの光を分離しているので、露光用マスク２
００の透過率を正確に測定することができる。さらに、
測定された透過率情報を光照射装置２１１にフィードバ
ックしているので、露光用マスク２００の最適透過率が
得られる時点で光の照射を停止できる利点がある。 （実施例２）図３は、本発明の第２の実施例に係わる露
光用マスクの製造装置の処理部の具体的構成を示す図で
ある。基本的な構成は第１の実施例と同様であるが、こ
の実施例では安定化のための光と透過率測定のための光
とを区別するために、直線偏光フィルタを用いる代わり
に波長の違いを利用している。With such a configuration, the light irradiation device 21
By irradiating light from No. 1, it is possible to form the above-mentioned stabilizing layer at the boundary portion between the transparent substrate and the phase shift film of the exposure mask 200, or to form the stabilizing region in the phase shift film, and to irradiate the exposure light. It is possible to prevent the accompanying fluctuation of the optical constants of the phase shift film. In addition, although a mechanism for measuring the transmittance is provided in this embodiment, the linear polarization filters 212, 2
15 and 216 are provided to separate the light from the light irradiation device 211 from the light from the monitor light source, the exposure mask 2
The transmittance of 00 can be measured accurately. further,
Since the measured transmittance information is fed back to the light irradiation device 211, there is an advantage that the light irradiation can be stopped when the optimum transmittance of the exposure mask 200 is obtained. (Embodiment 2) FIG. 3 is a diagram showing a specific configuration of a processing unit of an exposure mask manufacturing apparatus according to a second embodiment of the present invention. The basic configuration is similar to that of the first embodiment, but in this embodiment, in order to distinguish between the light for stabilization and the light for transmittance measurement, instead of using a linear polarization filter, Make use of the difference.

【００３１】露光用マスク３００には、デバイスパター
ン３０１と透過率モニタエリア３０２が形成されてい
る。光照射装置（第１の光源）３１１から放射された光
は波長限定するためのフィルタ３１２を介し、位相シフ
ト膜の赤外吸収帯の少なくとも一部を含む波長を持つ光
が露光用マスク３００に照射される。なお、光照射装置
３１１の光源には低圧水銀ランプ，高圧水銀ランプ，Ｘ
ｅ−Ｈｇランプ，重水素ランプ等が用いられ、これらを
露光用マスク３００の位相シフト膜の吸収帯に合うよう
選択すればよい。この際、照射される方向は透明基板か
ら位相シフト膜の方向となるように、露光用マスク３０
０は設置されている。A device pattern 301 and a transmittance monitor area 302 are formed on the exposure mask 300. The light emitted from the light irradiation device (first light source) 311 passes through the filter 312 for limiting the wavelength, and the light having a wavelength including at least a part of the infrared absorption band of the phase shift film is transmitted to the exposure mask 300. Is irradiated. The light source of the light irradiation device 311 is a low pressure mercury lamp, a high pressure mercury lamp, an X
An e-Hg lamp, a deuterium lamp, or the like is used, and these may be selected so as to match the absorption band of the phase shift film of the exposure mask 300. At this time, the exposure mask 30 is set so that the irradiation direction is from the transparent substrate to the phase shift film.
0 is installed.

【００３２】また、露光用マスク３００は４端支持によ
りその中心部を回転の軸としてモータ３１３により回転
されており、これにより光照射装置３１１からの光の均
一照射が可能となっている。ここで、本実施例では露光
用マスク３００の４端を固定するようにしているが、周
辺を固定するものであればこれに限るものではなく、第
１の実施例で説明したように種々の変形が可能である。Further, the exposure mask 300 is rotated by a motor 313 with its center portion as an axis of rotation by supporting at four ends, whereby uniform irradiation of light from the light irradiation device 311 is possible. Here, in this embodiment, the four ends of the exposure mask 300 are fixed, but the present invention is not limited to this as long as it fixes the periphery, and various types can be used as described in the first embodiment. Deformation is possible.

【００３３】また、露光用マスクの透過率を測定する部
分は、次のように構成されている。即ち、露光波長のみ
発する透過率モニタ用光源（第２の光源）３１４から発
せられた光は、透過率モニタエリア３０２に照射され、
このモニタエリア３０２を通過した光は透過率受光部３
１７に入射される。この透過率受光部３１７は光センサ
からなるもので、従ってモニタ用光源３１４の発光強度
を一定にしておけば、光センサの出力からモニタエリア
３０２の透過率が測定される。The portion for measuring the transmittance of the exposure mask is constructed as follows. That is, the light emitted from the light source (second light source) for transmittance monitor 314 that emits only the exposure wavelength is applied to the transmittance monitor area 302,
The light passing through the monitor area 302 is transmitted to the light receiving portion 3 of the transmittance.
It is incident on 17. The transmittance light receiving section 317 is composed of an optical sensor. Therefore, if the emission intensity of the monitor light source 314 is kept constant, the transmittance of the monitor area 302 can be measured from the output of the optical sensor.

【００３４】ここで、透過率受光部３１７は、光照射装
置３１１からの光とモニタ用光源３１４からの光とを区
別するために、波長選択性を有するものが望ましい。具
体的には、分光機能が付加されたフォトマルチプライヤ
或いはフォトダイオードを用いればよい。また、波長選
択性を有しない光センサを用いる場合、光センサの入力
側に光照射装置３１１からの光をカットしモニタ用光源
３１４からの光を透過するフィルタを配置すればよい。Here, it is desirable that the transmittance light receiving section 317 have wavelength selectivity in order to distinguish the light from the light irradiation device 311 from the light from the monitor light source 314. Specifically, a photomultiplier or a photodiode having a spectral function may be used. When an optical sensor having no wavelength selectivity is used, a filter that cuts light from the light irradiation device 311 and transmits light from the monitor light source 314 may be arranged on the input side of the optical sensor.

【００３５】透過率受光部３１７の測定結果は光照射装
置３１１に供給されており、測定結果に応じて照射制御
部３１８を介し光照射装置３１１を制御するものとなっ
ている。具体的には、透過率受光部３１７により最適透
過率が得られた時点で、光照射装置３１１の放射を終了
するものとなっている。The measurement result of the transmittance light receiving unit 317 is supplied to the light irradiation device 311 and the light irradiation device 311 is controlled via the irradiation control unit 318 according to the measurement result. Specifically, the radiation of the light irradiation device 311 is terminated when the transmittance light receiving unit 317 obtains the optimum transmittance.

【００３６】このような構成であれば、光照射装置３１
１からの光照射によって、露光用マスク３００の透明基
板と位相シフト膜との境界部分に前述した安定化層を形
成、又は位相シフト膜に安定化領域を形成することがで
き、露光光照射に伴う位相シフト膜の光学定数変動を防
止することができる。また、本実施例では透過率を測定
する機構を設けているが、波長の違いを利用して安定化
用の光と透過率モニタ用の光とを分離しているので、露
光用マスク３００の透過率を正確に測定することができ
る。さらに、測定された透過率情報を光照射装置３１１
にフィードバックしているので、露光用マスク３００の
最適透過率が得られる時点で光の照射を停止できる利点
がある。 （実施例３）図４は、本発明の第３の実施例に係わる露
光用マスクの製造装置の処理部の具体的構成を示す図で
ある。基本的な構成は第２の実施例と同様であるが、こ
の実施例では安定化のための光と透過率測定のための光
とを区別するために、各々の光を照射する時間をずらし
ている。With such a structure, the light irradiation device 31
By irradiating the light from No. 1, it is possible to form the above-mentioned stabilizing layer at the boundary portion between the transparent substrate and the phase shift film of the exposure mask 300, or to form the stabilizing region in the phase shift film. It is possible to prevent the accompanying fluctuation of the optical constants of the phase shift film. Further, in the present embodiment, a mechanism for measuring the transmittance is provided, but since the stabilizing light and the transmittance monitoring light are separated by utilizing the difference in wavelength, the exposure mask 300 The transmittance can be measured accurately. Furthermore, the measured transmittance information is used as the light irradiation device 311.
Therefore, there is an advantage that the light irradiation can be stopped when the optimum transmittance of the exposure mask 300 is obtained. (Embodiment 3) FIG. 4 is a diagram showing a specific configuration of a processing unit of an exposure mask manufacturing apparatus according to a third embodiment of the present invention. The basic structure is the same as that of the second embodiment, but in this embodiment, in order to distinguish between the light for stabilization and the light for transmittance measurement, the irradiation time of each light is shifted. ing.

【００３７】露光用マスク４００には、デバイスパター
ン４０１と透過率モニタエリア４０２が形成されてい
る。光照射装置（第１の光源）４１１から放射された光
はシャッタ４１２を介し、周期的に露光用マスク４００
に照射される。なお、光照射装置４１１の光源には低圧
水銀ランプ，高圧水銀ランプ，Ｘｅ−Ｈｇランプ，重水
素ランプ等が用いられ、これらを露光用マスク４００の
位相シフト膜の吸収帯に合うよう選択すればよい。ま
た、光照射装置に周期的に発光するレーザ、例えばＫｒ
Ｆエキシマレーザなどを用いればシャッタ４１２は不要
である。この際、照射される方向は透明基板から位相シ
フト膜の方向となるように、露光用マスク４００は設置
されている。A device pattern 401 and a transmittance monitor area 402 are formed on the exposure mask 400. Light emitted from the light irradiation device (first light source) 411 passes through the shutter 412 and is periodically exposed to the exposure mask 400.
Is irradiated. Note that a low-pressure mercury lamp, a high-pressure mercury lamp, a Xe-Hg lamp, a deuterium lamp, or the like is used as a light source of the light irradiation device 411, and if these are selected so as to match the absorption band of the phase shift film of the exposure mask 400. Good. Also, a laser that periodically emits light to the light irradiation device, for example, Kr
If an F excimer laser or the like is used, the shutter 412 is unnecessary. At this time, the exposure mask 400 is installed so that the irradiation direction is from the transparent substrate to the phase shift film.

【００３８】また、露光用マスク４００は４端支持によ
りその中心部を回転の軸としてモータ４１３により回転
されており、これにより光照射装置４１１からの光の均
一照射が可能となっている。ここで、本実施例では露光
用マスク４００の４端を固定するようにしているが、周
辺を固定するものであればこれに限るものではなく、第
１の実施例で説明したように種々の変形が可能である。Further, the exposure mask 400 is rotated by a motor 413 with its center portion as a rotation axis by the four-end support, whereby the light from the light irradiation device 411 can be uniformly irradiated. Here, in the present embodiment, the four ends of the exposure mask 400 are fixed, but the invention is not limited to this as long as it fixes the periphery, and various types can be used as described in the first embodiment. Deformation is possible.

【００３９】また、露光用マスクの透過率を測定する部
分は、次のように構成されている。即ち、露光波長のみ
発する透過率モニタ用光源（第２の光源）４１４から発
せられた光は、シャッタ４１５を介して周期的に透過率
モニタエリア４０２に照射され、このモニタエリア４０
２を通過した光は透過率受光部４１７に入射される。こ
のとき、光照射装置４１４から光が照射されない時期に
透過率モニタ用光源４１４からの光が透過率モニタエリ
ア４０２に照射されるようにシャッタ４１５は制御され
ている。なお、透過率モニタ用光源４１４に周期的に発
光するレーザ、例えばＫｒＦエキシマレーザなどを用
い、かつ光照射装置４１１の照射時期からずらした時期
に透過率モニタ用光源から照射できればシャッタ４１５
は不要である。透過率受光部４１７は光センサからなる
もので、従ってモニタ用光源４１４の発光強度を一定に
しておけば、光センサの出力からモニタエリア４０２の
透過率が測定される。The portion for measuring the transmittance of the exposure mask has the following structure. That is, the light emitted from the light source (second light source) for transmittance monitor 414 that emits only the exposure wavelength is periodically radiated to the transmittance monitor area 402 via the shutter 415, and the monitor area 40.
The light that has passed through 2 is incident on the transmittance light receiving unit 417. At this time, the shutter 415 is controlled so that the light from the light source 414 for transmittance monitor is irradiated to the transmittance monitor area 402 when the light is not irradiated from the light irradiation device 414. It should be noted that if a laser that periodically emits light is used for the transmittance monitor light source 414, for example, a KrF excimer laser or the like, and if the transmittance monitor light source can irradiate at a time that is shifted from the irradiation time of the light irradiation device 411, the shutter 415 will be used.
Is unnecessary. The transmittance light receiving unit 417 is composed of an optical sensor. Therefore, if the light emission intensity of the monitor light source 414 is kept constant, the transmittance of the monitor area 402 can be measured from the output of the optical sensor.

【００４０】透過率受光部４１７の測定結果は光照射装
置４１１に供給されており、測定結果に応じて照射制御
部４１８を介し光照射装置４１１を制御するものとなっ
ている。具体的には、透過率受光部４１７により最適透
過率が得られた時点で、光照射装置４１１の放射を終了
するものとなっている。The measurement result of the transmittance light receiving unit 417 is supplied to the light irradiation device 411, and the light irradiation device 411 is controlled via the irradiation control unit 418 according to the measurement result. Specifically, the radiation of the light irradiation device 411 is terminated when the transmittance light receiving unit 417 obtains the optimum transmittance.

【００４１】このような構成であれば、光照射装置４１
１からの光照射によって、露光用マスク４００の透明基
板と位相シフト膜との境界部分に前述した安定化層を形
成、又は位相シフト膜に安定化領域を形成することがで
き、露光光照射に伴う位相シフト膜の光学定数変動を防
止することができる。With such a structure, the light irradiation device 41
By irradiating light from No. 1, it is possible to form the above-mentioned stabilizing layer at the boundary portion between the transparent substrate and the phase shift film of the exposure mask 400, or to form a stabilizing region in the phase shift film. It is possible to prevent the accompanying fluctuation of the optical constants of the phase shift film.

【００４２】また、本実施例では透過率を測定する機構
を設けているが、シャッタ４１２，４１５を設け光照射
の時期をずらすことにより、安定化用の光と透過率モニ
タ用の光とを分離しているので、露光用マスク４００の
透過率を正確に測定することができる。さらに、測定さ
れた透過率情報を光照射装置４１１にフィードバックし
ているので、露光用マスク４００の最適透過率が得られ
る時点で光の照射を停止できる利点がある。Further, in the present embodiment, a mechanism for measuring the transmittance is provided, but by providing the shutters 412 and 415 and shifting the timing of light irradiation, the stabilizing light and the transmittance monitoring light are separated from each other. Since they are separated, the transmittance of the exposure mask 400 can be accurately measured. Further, since the measured transmittance information is fed back to the light irradiation device 411, there is an advantage that the light irradiation can be stopped when the optimum transmittance of the exposure mask 400 is obtained.

【００４３】なお、本実施例では位相シフト膜の透過率
をモニタする機構が設けられているが、この代わりに分
光エリプソにより反射光をモニタし得られる位相シフト
膜の屈折率ｎ、消衰係数ｋ，膜厚ｄから透過率及び位相
差を求め終点判別を行う機構が設置されていてもよい。 （実施例４）図５は、本発明の第３の実施例に係わる露
光用マスクの製造工程を示す断面図である。本実施例
は、ＡｒＦエキシマレーザ露光に用いるＳｉＮｘ位相シ
フト膜の製造方法に関する。製造装置としては、前記図
１及び図２に示したものを用いた。Although a mechanism for monitoring the transmittance of the phase shift film is provided in this embodiment, instead of this, the refractive index n and the extinction coefficient of the phase shift film obtained by monitoring the reflected light by spectral ellipsometry. A mechanism for determining the end point by obtaining the transmittance and the phase difference from k and the film thickness d may be installed. (Embodiment 4) FIG. 5 is a sectional view showing a manufacturing process of an exposure mask according to a third embodiment of the present invention. This example relates to a method of manufacturing a SiNx phase shift film used for ArF excimer laser exposure. As the manufacturing apparatus, the one shown in FIGS. 1 and 2 was used.

【００４４】図６に本実施例における屈折率ｎ，消衰係
数ｋの推移を示す。曲線ＡはＳｉＮｘをスパッタ法によ
り成膜したときの組成比に対する（ｎ，ｋ）曲線、曲線
ＢはＰ１点のＳｉＮｘ組成を固定し更に酸素を添加した
ときの添加量に対する（ｎ，ｋ）曲線、曲線ＣはＰ２点
におけるＳｉＮｘＯｙ組成に対し、更に光照射によりタ
ングリングボンドを減少させて得られる（ｎ，ｋ）曲線
である。FIG. 6 shows changes in the refractive index n and the extinction coefficient k in this embodiment. A curve A is a (n, k) curve with respect to the composition ratio when SiNx is formed by a sputtering method, and a curve B is a (n, k) curve with respect to the addition amount when the SiNx composition at the P1 point is fixed and oxygen is further added. The curve C is a (n, k) curve obtained by further reducing the tungling bond by light irradiation with respect to the SiNxOy composition at the point P2.

【００４５】まず、図５（ａ）に示すように、石英等か
らなる透明基板５０１をチャンバに導入し、この基板５
０１上にスパッタ法により膜厚が８７ｎｍのＳｉＮｘ膜
５０２（位相シフト膜）を形成した。このとき、位相シ
フト膜５０２の振幅透過率は１９３ｎｍで１７．６％で
あった（図６Ｐ１点）。First, as shown in FIG. 5A, a transparent substrate 501 made of quartz or the like is introduced into the chamber, and the substrate 5
A SiNx film 502 (phase shift film) having a film thickness of 87 nm was formed on 01 by sputtering. At this time, the amplitude transmittance of the phase shift film 502 was 17.6% at 193 nm (point P1 in FIG. 6).

【００４６】次いで、この位相シフト膜５０２の表面の
経時変化を防止するため、基板上に作成した膜を外気に
晒すことなく引き続きチャンバ内でオゾン雰囲気にて酸
化させ、膜中の孤立電子対及びＳｉのタングリングボン
ドを減少させた。これにより、位相シフト膜５０２の振
幅透過率は２０．１％となった（図６Ｐ２点）。さら
に、低圧水銀ランプにより２５４ｎｍ近傍の波長を持つ
遠紫外線を透明基板５０１から位相シフト膜５０２方向
に基板に対し均一に照射させＳｉＮｘ膜５０２の改質を
行った。このとき、改質により位相シフト膜５０２の振
幅透過率は２４．５％となった（図６Ｐ３点）。Next, in order to prevent the surface of the phase shift film 502 from changing over time, the film formed on the substrate is continuously oxidized in an ozone atmosphere in the chamber without exposing it to the outside air, and the isolated electron pairs in the film and The tongue bond of Si was reduced. As a result, the amplitude transmittance of the phase shift film 502 became 20.1% (point P2 in FIG. 6). Furthermore, the SiNx film 502 was modified by irradiating the substrate with far ultraviolet rays having a wavelength near 254 nm from the transparent substrate 501 in the direction of the phase shift film 502 uniformly with a low-pressure mercury lamp. At this time, due to the modification, the amplitude transmittance of the phase shift film 502 became 24.5% (point P3 in FIG. 6).

【００４７】これらの処理後、基板５０１をチャンバ外
に取り出した。なお、成膜時のＳｉＮｘ膜５０２の屈折
率，消衰係数，膜厚は、酸化反応及び紫外線照射後に所
望の透過率，位相差になるように、予め酸化反応及び紫
外線照射での屈折率，消衰係数，膜厚の変化量を見込ん
で設定した。After these processes, the substrate 501 was taken out of the chamber. The refractive index, the extinction coefficient, and the film thickness of the SiNx film 502 at the time of film formation are adjusted so that the desired transmittance and phase difference after the oxidation reaction and the ultraviolet irradiation are the same as the refractive index in the oxidation reaction and the ultraviolet irradiation. The values were set in consideration of the extinction coefficient and the amount of change in film thickness.

【００４８】次いで、図５（ｂ）に示すようにＳｉＮｘ
膜５０２上にＥＢレジスト５０３を塗布し、さらにＥＢ
描画時に生じるチャージアップを防止するために導電性
の膜５０４をＥＢレジスト５０３上に形成した。その
後、図５（ｃ）に示すように、ＥＢ描画により所望のレ
ジストパターンを形成した。Then, as shown in FIG. 5B, SiNx
EB resist 503 is applied on the film 502, and then EB
A conductive film 504 is formed on the EB resist 503 in order to prevent charge-up that occurs during writing. After that, as shown in FIG. 5C, a desired resist pattern was formed by EB drawing.

【００４９】次いで、図５（ｄ）に示すように、このパ
ターンをマスクとしてＳｉＮｘ膜５０２を選択エッチン
グすることにより、ＳｉＮｘ膜５０２のパターニングを
行った。このときのエッチングにはＣＤＥ（chemical D
ry Etching）や、ＲＩＥ（反応性イオンエッチング）等
を用いればよい。その後、レジストパターンを除去する
ことで、図５（ｅ）に示すようなＳｉＮｘ半透明位相シ
フトパターンが得られた。Next, as shown in FIG. 5D, the SiNx film 502 was selectively etched by using this pattern as a mask to pattern the SiNx film 502. CDE (chemical D
ry Etching), RIE (reactive ion etching) or the like may be used. Then, the resist pattern was removed to obtain a SiNx semitransparent phase shift pattern as shown in FIG. 5 (e).

【００５０】図７に、本実施例により作成した半透明位
相シフト膜の露光光照射量に対する透過率変化を示す。
このように本実施例方法によれば、露光光照射で膜質が
変化することなく、安定した光学性能を維持でき、実際
の露光に使用しても、露光光照射に伴う位相シフト膜の
物性変動を生じるはことなく、パターン転写精度の向上
に寄与することができる。FIG. 7 shows the change in transmittance with respect to the exposure light irradiation amount of the semitransparent phase shift film produced according to this example.
As described above, according to the method of this example, stable optical performance can be maintained without changing the film quality due to exposure light irradiation, and even when used in actual exposure, changes in physical properties of the phase shift film due to exposure light irradiation. It is possible to contribute to the improvement of pattern transfer accuracy without causing

【００５１】本実施例方法により得られた振幅透過率２
４．５％、位相差１８０度のハーフトーン型位相シフト
マスクを、露光光源にＡｒＦレーザを用いて０．１８μ
ｍのホールパターンの転写結果を評価したところ１．０
μｍの焦点深度を得ることができた。また、同一マスク
を１００ロットを照射した時点で再度転写結果を評価し
たところ、焦点深度は１．０μｍとマスク作成時の性能
をそのまま維持することができた。一方、従来の方法で
作成したマスクは１００ロットを照射した時点で露光光
照射並びに経時変化により成膜時の振幅透過率２４．５
％、位相差１８０度から振幅透過率２７．５％、位相差
１６５度へと大きく変動し、この結果焦点深度は０．３
μｍとマスク作成時の性能を大幅に劣化させていること
が分かった。Amplitude transmittance 2 obtained by the method of this embodiment 2
A halftone type phase shift mask with a phase difference of 4.5% and a phase difference of 180 degrees was used and 0.18 μm using an ArF laser as an exposure light source.
When the transfer result of the hole pattern of m was evaluated, it was 1.0.
It was possible to obtain a focal depth of μm. Further, when the transfer result was evaluated again when 100 lots of the same mask were irradiated, the depth of focus was 1.0 μm and the performance at the time of mask production could be maintained. On the other hand, the mask prepared by the conventional method has an amplitude transmittance of 24.5 at the time of film formation due to exposure light irradiation and aging when 100 lots are irradiated.
%, The phase difference is 180 degrees, the amplitude transmittance is 27.5%, and the phase difference is 165 degrees. As a result, the depth of focus is 0.3.
It was found that the performance at the time of mask making was significantly deteriorated.

【００５２】また、上記と同様にしてＫｒＦレーザ露光
に用いるＳｉＮｘ位相シフト膜を形成し、得られた振幅
透過率２４．５％、位相差１８０度のハーフトーン型位
相シフトマスクを、露光光源にＫｒＦレーザを用いて
０．３μｍのホールパターンの転写結果を評価したとこ
ろ１．５μｍの焦点深度を得ることができた。また、同
一マスクを５００ロットを照射した時点で再度転写結果
を評価したところ、焦点深度は１．５μｍとマスク作成
時の性能をそのまま維持することができた。一方、従来
の方法で作成したマスクは５００ロットを照射した時点
で露光光照射並びに経時変化により成膜時の振幅透過率
２４．５％、位相差１８０℃から振幅透過率２６．５
％、位相差１７０度へと大きく変動し、この結果焦点深
度は０．８μｍとマスク作成時の性能を大幅に劣化させ
ていることが分かった。この結果、本実施例記載の製造
装置並びに製造方法により作成されたハーフトーン型位
相シフトマスクを用いることでデバイスへの適用範囲が
大きく広がった。Further, a SiNx phase shift film used for KrF laser exposure was formed in the same manner as described above, and the obtained halftone phase shift mask having an amplitude transmittance of 24.5% and a phase difference of 180 degrees was used as an exposure light source. When a transfer result of a 0.3 μm hole pattern was evaluated using a KrF laser, a focal depth of 1.5 μm could be obtained. Further, when the transfer result was evaluated again when 500 lots of the same mask were irradiated, the depth of focus was 1.5 μm, and the performance at the time of mask preparation could be maintained as it was. On the other hand, the mask prepared by the conventional method has an amplitude transmittance of 24.5% at the time of film formation due to exposure light irradiation and a change with time when 500 lots are irradiated, and a phase difference of 180 ° C. to an amplitude transmittance of 26.5.
%, The phase difference greatly changed to 170 degrees, and as a result, the depth of focus was 0.8 μm, which was found to significantly deteriorate the performance during mask making. As a result, by using the halftone phase shift mask manufactured by the manufacturing apparatus and the manufacturing method described in this embodiment, the range of application to the device is greatly expanded.

【００５３】なお、本実施例の短波長光照射の代わりに
加熱処理を行ってもよい。また、短波長光照射と加熱処
理を同時に行い反応をより促進させて行ってもよい。ま
た、照射光光源に低圧水銀ランプを用いているが、他の
光源、例えば重水素ランプ、キセノンランプ、カットオ
フフィルタを併用して用いてもよい。また、ここでは位
相シフト膜としてＳｉＮｘ膜を用いたが、ＳｉＮｘ膜に
限らず他の薄膜、例えばＳｉ，Ｃｒ，Ｇｅ，Ｔｉ，Ｔ
ａ，Ａｌ，Ｓｎ，Ｈｆなどの金属やＡｌＳｉ，ＭｏＳ
ｉ、ＷＳｉ，ＮｉＳｉ，ＡｌＣｕＳｉなどの金属シリサ
イド膜、カーボン、或いはこれらの酸化物，窒化物，炭
化物，水素化物，ハロゲン化物の単体又はこれらの混合
物を用いても同様の効果が得られる。また他の露光光
源、例えば水銀ランプのｇ，ｉ線やＡｒＦ、ＫｒＦレー
ザ光などを対象とした位相シフト膜に対し適用可能であ
る。Note that heat treatment may be performed instead of the short wavelength light irradiation of this embodiment. In addition, short wavelength light irradiation and heat treatment may be performed simultaneously to accelerate the reaction. Although a low-pressure mercury lamp is used as the irradiation light source, other light sources such as a deuterium lamp, a xenon lamp, and a cutoff filter may be used together. Further, here, the SiNx film is used as the phase shift film, but it is not limited to the SiNx film, and other thin films such as Si, Cr, Ge, Ti, and T are used.
Metals such as a, Al, Sn, Hf and AlSi, MoS
The same effect can be obtained by using a metal silicide film such as i, WSi, NiSi, AlCuSi, carbon, or their oxides, nitrides, carbides, hydrides or halides, or a mixture thereof. Further, the present invention can be applied to other exposure light sources, such as a phase shift film for g and i rays of a mercury lamp and ArF and KrF laser light.

【００５４】また、本実施例では酸化処理として酸素と
オゾンを用いたが、他にも酸化作用の強いもの、例えば
発煙硝酸を用いてもよい。また、ＣＶＤ法、光励起ＣＶ
Ｄ法などによって酸化膜を形成してもよい。また、酸素
濃度が膜内で勾配を持つように成膜条件、改質条件を調
整してもよい。また、位相シフト膜の膜厚を本発明の趣
旨を逸脱しない範囲において適当な厚さにしてもよい。
また、導電性膜を位相シフト膜上に形成する代わりに基
板に予め帯電防止の役割をする膜が形成されているもの
を用いてもよい。 （実施例５）図８は、本発明の第５の実施例に係わる露
光用マスクの製造工程を示す断面図である。本実施例
は、水銀ランプのｉ線露光に用いるＳｉＮｘ位相シフト
膜の製造方法に関する。製造装置としては、前記図１及
び図２に示したものを用いた。Further, although oxygen and ozone are used for the oxidation treatment in this embodiment, it is also possible to use a substance having a strong oxidizing action, for example, fuming nitric acid. Also, CVD method, photoexcited CV
An oxide film may be formed by the D method or the like. Further, the film forming conditions and the modifying conditions may be adjusted so that the oxygen concentration has a gradient in the film. Further, the thickness of the phase shift film may be set to an appropriate thickness without departing from the spirit of the present invention.
Further, instead of forming the conductive film on the phase shift film, it is also possible to use a substrate on which a film having an antistatic function is previously formed. (Embodiment 5) FIG. 8 is a sectional view showing the steps of manufacturing an exposure mask according to the fifth embodiment of the present invention. This example relates to a method of manufacturing a SiNx phase shift film used for i-line exposure of a mercury lamp. As the manufacturing apparatus, the one shown in FIGS. 1 and 2 was used.

【００５５】図９に本実施例における屈折率ｎ、消衰係
数ｋの推移を示す。曲線ＡはＳｉＮｘをスパッタ法によ
り成膜したときの組成比に対する（ｎ，ｋ）曲線、曲線
ＢはＰ１点のＳｉＮｘ組成を固定し光照射と酸化を同時
に生じさせた時の酸素濃度増加とダングリングボント数
を減少させて得られる（ｎ，ｋ）曲線である。FIG. 9 shows changes in the refractive index n and the extinction coefficient k in this embodiment. A curve A is a (n, k) curve with respect to the composition ratio when SiNx is formed by a sputtering method, and a curve B is an increase in oxygen concentration and dangling when the SiNx composition at the P1 point is fixed and light irradiation and oxidation occur simultaneously. It is a (n, k) curve obtained by reducing the number of ring bonds.

【００５６】まず、図８（ａ）に示すように透明基板８
０１をチャンバ内に導入し、透明基板８０１上にスパッ
タ法により膜厚が９７ｎｍのＳｉＮｘ膜８０２（位相シ
フト膜）を形成する。このとき、位相シフト膜８０２の
振幅透過率は２０．０％であった（図９Ｐ１）。First, as shown in FIG. 8A, the transparent substrate 8
01 is introduced into the chamber, and a 97 nm-thickness SiNx film 802 (phase shift film) is formed on the transparent substrate 801 by a sputtering method. At this time, the amplitude transmittance of the phase shift film 802 was 20.0% (FIG. 9P1).

【００５７】次いで、チャンバ内に酸素を導入しＳｉＮ
ｘ膜８０２形成後に酸素を含む雰囲気チャンバ内に設置
された低圧水銀ランプにより１８５ｎｍ並びに２５４ｎ
ｍに波長を持つ遠紫外線を透明基板８０１から位相シフ
ト膜８０２方向及び、位相シフト膜８０２から透明基板
８０１方向に均一に照射させる。この際、１８５ｎｍの
遠紫外線はチャンバ内の酸素に吸収されオゾンを発生す
る。このオゾンにより位相シフト膜８０２が酸化され
る。一方、オゾンが酸素に脱励起される際に３００ｎｍ
近傍の波長を有する光を発する。また、このオゾンに２
５４ｎｍの遠紫外線が吸収されると励起酸素原子が生成
され、これも位相シフト膜の酸化に寄与する。この処理
により位相シフト膜８０２の振幅透過率は２１．９％に
変化した（図９Ｐ２）。Then, oxygen is introduced into the chamber and SiN
After formation of the x film 802, a low pressure mercury lamp installed in an atmosphere chamber containing oxygen was used to measure 185 nm and 254 n.
Far ultraviolet rays having a wavelength of m are uniformly irradiated from the transparent substrate 801 toward the phase shift film 802 and from the phase shift film 802 toward the transparent substrate 801. At this time, the deep ultraviolet rays of 185 nm are absorbed by oxygen in the chamber to generate ozone. This ozone oxidizes the phase shift film 802. On the other hand, when ozone is deexcited to oxygen, 300 nm
It emits light having a wavelength in the vicinity. In addition, 2 to this ozone
When deep UV of 54 nm is absorbed, excited oxygen atoms are generated, which also contributes to the oxidation of the phase shift film. By this processing, the amplitude transmittance of the phase shift film 802 was changed to 21.9% (Fig. 9P2).

【００５８】これらの処理後、基板をチャンバ外に取り
出した。なお、成膜時のＳｉＮｘ膜の屈折率，消衰係
数，膜厚はオゾン並びに励起酸素原子による酸化反応及
び紫外線照射後に透過率，位相差になるように、予めオ
ゾン並びに励起酸素原子による酸化反応及び紫外線照射
での屈折率，消衰係数，膜厚の変化量を見込んで設定し
た。After these treatments, the substrate was taken out of the chamber. The refractive index, extinction coefficient, and film thickness of the SiNx film at the time of film formation are such that the oxidation reaction by ozone and excited oxygen atoms and the oxidation reaction by ozone and excited oxygen atoms are performed in advance so that the transmittance and the phase difference after irradiation of ultraviolet rays become the same. Also, the amount of change in the refractive index, extinction coefficient, and film thickness due to UV irradiation was set in consideration.

【００５９】次いで、図８（ｂ）に示すように、ＳｉＮ
膜上８０２にＥＢレジスト８０３を塗布し、さらにＥＢ
描画時に生じるチャージアップを防止するために導電性
の膜８０４をＥＢレジスト８０３上に形成する。その
後、図８（ｃ）に示すように、ＥＢ描画により所望のレ
ジストパターンを形成する。Then, as shown in FIG. 8B, SiN
EB resist 803 is applied on the film 802, and then EB
A conductive film 804 is formed over the EB resist 803 in order to prevent charge-up that occurs during writing. After that, as shown in FIG. 8C, a desired resist pattern is formed by EB drawing.

【００６０】次いで、図８（ｄ）に示すように、レジス
トパターンをマスクとしてＳｉＮｘ膜８０２の選択エッ
チングすることにより、ＳｉＮｘ膜８０２のパターニン
グを行う。エッチングにはＣＤＥや、ＲＩＥ等を用いれ
ばよい。そして、このエッチングによりＳｉＮｘ膜パタ
ーンを形成したのちレジストパターンを除去することに
よって、図８（ｅ）に示すような露光用マスクが得られ
る。ここで、処理は光照射により行われているが、高温
加熱処理を同時に行い反応をより促進させて行ってもよ
い。Next, as shown in FIG. 8D, the SiNx film 802 is selectively etched by using the resist pattern as a mask to pattern the SiNx film 802. CDE, RIE, or the like may be used for etching. Then, a SiNx film pattern is formed by this etching and then the resist pattern is removed to obtain an exposure mask as shown in FIG. Here, the treatment is carried out by irradiation with light, but the treatment may be carried out at the same time by carrying out a high temperature heat treatment to further accelerate the reaction.

【００６１】このように本実施例方法によれば位相シフ
ト膜の膜質が露光により変化することなく安定した性能
を維持することができ、第４の実施例と同様の効果が得
られる。また、本実施例においても、第４の実施例で説
明したように各種の変化が可能である。As described above, according to the method of this embodiment, stable performance can be maintained without changing the film quality of the phase shift film due to exposure, and the same effect as that of the fourth embodiment can be obtained. Also in this embodiment, various changes can be made as described in the fourth embodiment.

【００６２】[0062]

【発明の効果】以上説明したように本発明によれば。大
気に晒すことなく位相シフト膜の安定化処理を行い、露
光光照射に対する位相シフト膜の不安定さを光エネルギ
ー等を外部から与えることによって、透過率変動を防ぐ
と共にレジストとの密着性を向上させることが可能とな
った。これにより、マスク作成が容易になると共に、マ
スク特性変化を抑えることができた。従って、長期にわ
たって同一のマスクを安定に使用することが可能となっ
た。As described above, according to the present invention. Stabilization of the phase shift film without exposing it to the atmosphere, and the instability of the phase shift film with respect to exposure light is given from the outside with optical energy, etc., to prevent fluctuations in transmittance and improve adhesion with the resist. It became possible to do. As a result, it was possible to easily make a mask and suppress changes in mask characteristics. Therefore, it is possible to stably use the same mask for a long period of time.

【図面の簡単な説明】[Brief description of drawings]

【図１】第１の実施例に係わる露光用マスクの製造装置
を示す基本構成図。FIG. 1 is a basic configuration diagram showing an exposure mask manufacturing apparatus according to a first embodiment.

【図２】第１の実施例の製造装置の処理部の具体的構成
を示す図。FIG. 2 is a diagram showing a specific configuration of a processing unit of the manufacturing apparatus according to the first embodiment.

【図３】第２の実施例の製造装置の処理部の具体的構成
を示す図。FIG. 3 is a diagram showing a specific configuration of a processing unit of the manufacturing apparatus according to the second embodiment.

【図４】第３の実施例の製造装置の処理部の具体的構成
を示す図。FIG. 4 is a diagram showing a specific configuration of a processing unit of a manufacturing apparatus according to a third embodiment.

【図５】第４の実施例に係わる露光用マスクの製造工程
を示す断面図。FIG. 5 is a cross-sectional view showing the manufacturing process of the exposure mask according to the fourth embodiment.

【図６】第４の実施例における安定化処理前後の複素屈
折率変化を示す図。FIG. 6 is a diagram showing changes in complex refractive index before and after stabilization processing in a fourth example.

【図７】第４の実施例における位相シフト膜の透過率変
化を示す図。FIG. 7 is a diagram showing a change in transmittance of the phase shift film in the fourth embodiment.

【図８】第５の実施例に係わる露光用マスクの製造工程
を示す断面図。FIG. 8 is a sectional view showing a manufacturing process of an exposure mask according to the fifth embodiment.

【図９】第５の実施例における安定化処理前後の複素屈
折率変化を示す図。FIG. 9 is a diagram showing changes in complex refractive index before and after the stabilization process in the fifth embodiment.

【図１０】ＳｉＮｘ膜中のアンモニア濃度の変化を示す
図。FIG. 10 is a diagram showing changes in the concentration of ammonia in the SiNx film.

【図１１】ＳｉＮｘ膜中の水分量の変化を示す図。FIG. 11 is a diagram showing changes in the amount of water in the SiNx film.

【図１２】ＳｉＮｘ膜作成後の透過率変化を示す図。FIG. 12 is a diagram showing a change in transmittance after forming a SiNx film.

【符号の説明】[Explanation of symbols]

１０…成膜部 ２０…処理部 ３０…基板搬入部 ４０…基板搬出部 ２１…チャンバ ２２…基板 ２３…テーブル ２４…光照射部 ２５…透過率測定光照射部 ２６…透過率測定部 ２００，３００，４００…露光用マスク ２０１，３０１，４０１…デバイスパターン ２０２，３０２，４０２…モニタエリア ２１１，３１１，４１１…光照射装置（第１の光源） ２１２，２１５，２１６，３１２，４１２，４１５…直
線偏光フィルタ ２１３，３１３，４１３…モータ ２１４，３１４，４１４…透過率モニタ用光源（第２の
光源） ２１７，３１７，４１７…透過率受光部 ２１８，３１８，４１８…照射制御部 ５０１，８０１…透明基板 ５０２，８０２…ＳｉＮ膜（位相シフト膜） ５０３，８０３…ＥＢレジスト ５０４，８０４…導電膜10 ... Film-forming part 20 ... Processing part 30 ... Substrate carry-in part 40 ... Substrate carry-out part 21 ... Chamber 22 ... Substrate 23 ... Table 24 ... Light irradiation part 25 ... Transmittance measurement Light irradiation part 26 ... Transmittance measuring part 200, 300 , 400 ... Exposure mask 201, 301, 401 ... Device pattern 202, 302, 402 ... Monitor area 211, 311, 411 ... Light irradiation device (first light source) 212, 215, 216, 312, 412, 415 ... Straight line Polarization filter 213, 313, 413 ... Motor 214, 314, 414 ... Transmittance monitor light source (second light source) 217, 317, 417 ... Transmittance light receiving section 218, 318, 418 ... Irradiation control section 501, 801, ... Transparent Substrate 502, 802 ... SiN film (phase shift film) 503, 803 ... EB resist 504, 804 ... Conductive film

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】透光性基板上に少なくとも位相シフト膜か
ら成るパターンを有する露光用マスクの製造方法におい
て、 前記透光性基板上に前記位相シフト膜を成膜した後、大
気に晒すことなく前記位相シフト膜の元素組成又は光学
定数を変化させ、所望の位相差と透過率に調整すること
を特徴とする露光用マスクの製造方法。1. A method of manufacturing an exposure mask having a pattern composed of at least a phase shift film on a transparent substrate, wherein the phase shift film is formed on the transparent substrate without exposing to the atmosphere. A method for manufacturing an exposure mask, which comprises changing the elemental composition or the optical constant of the phase shift film to adjust it to a desired phase difference and transmittance. 【請求項２】透光性基板上に位相シフト膜を形成する工
程と、前記位相シフト膜を大気に晒すことなく安定化処
理を行うことにより、前記位相シフト膜の元素組成又は
光学定数を変化させて所望の位相差と透過率に調整する
工程と、前記位相シフト膜上に感光性樹脂膜を形成する
工程と、前記感光性樹脂膜を放射線又は荷電粒子線によ
り露光して感光性樹脂パターンを形成する工程と、前記
感光性樹脂パターンをマスクに前記位相シフト膜の露出
している部分を除去する工程と、前記感光性樹脂パター
ンを除去する工程とを含むことを特徴とする露光用マス
クの製造方法。2. A step of forming a phase shift film on a transparent substrate, and a stabilization treatment without exposing the phase shift film to the atmosphere to change the elemental composition or the optical constant of the phase shift film. To adjust to a desired phase difference and transmittance, a step of forming a photosensitive resin film on the phase shift film, a photosensitive resin pattern by exposing the photosensitive resin film with radiation or charged particle beams And a step of removing the exposed portion of the phase shift film using the photosensitive resin pattern as a mask, and a step of removing the photosensitive resin pattern. Manufacturing method. 【請求項３】前記位相シフト膜の光学定数を変化させる
工程は、真空中，希ガス中又は反応ガス中にて光，熱，
電磁波又は粒子線を用いることにより成されることを特
徴とする請求項１又は２に記載の露光用マスクの製造方
法。3. The step of changing the optical constants of the phase shift film comprises the steps of applying light, heat, and vacuum in a rare gas or a reactive gas.
The method for producing an exposure mask according to claim 1 or 2, which is formed by using an electromagnetic wave or a particle beam. 【請求項４】透光性基板上に位相シフト膜を形成する手
段と、前記位相シフト膜の形成された透光性基板を大気
に晒すことなく前記位相シフト膜の安定化処理を行い、
前記位相シフト膜の元素組成又は光学定数を変化させて
所望の位相差と透過率に調整する手段とを具備してなる
ことを特徴とする露光用マスクの製造装置。4. A means for forming a phase shift film on a transparent substrate, and a stabilization treatment of the phase shift film without exposing the transparent substrate on which the phase shift film is formed to the atmosphere.
A device for manufacturing an exposure mask, comprising: means for changing the elemental composition or the optical constant of the phase shift film to adjust to a desired phase difference and transmittance. 【請求項５】透光性基板上に位相シフト膜を形成する成
膜室と、この成膜室とゲートバルブを介して連設され、
前記位相シフト膜の形成された透光性基板を大気に晒す
ことなく搬入して、該位相シフト膜の安定化処理を行う
処理室とを具備してなり、 前記処理室では、前記位相シフト膜の元素組成又は光学
定数を変化させて所望の位相差と透過率に調整すること
を特徴とする露光用マスクの製造装置。5. A film forming chamber for forming a phase shift film on a translucent substrate, and the film forming chamber is connected to the film forming chamber via a gate valve.
And a processing chamber for carrying in the light-transmissive substrate on which the phase shift film is formed without exposing it to the atmosphere, and performing a stabilization process on the phase shift film, wherein the phase shift film is provided in the processing chamber. A device for manufacturing an exposure mask, characterized in that the elemental composition or optical constant of is adjusted to a desired retardation and transmittance.
JP2676395A 1995-02-15 1995-02-15 Method and apparatus for manufacturing exposure mask Expired - Lifetime JP3286103B2 (en)

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JP3286103B2 JP3286103B2 (en) 2002-05-27

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