JPS6183245U - - Google Patents
Info
- Publication number
- JPS6183245U JPS6183245U JP16965384U JP16965384U JPS6183245U JP S6183245 U JPS6183245 U JP S6183245U JP 16965384 U JP16965384 U JP 16965384U JP 16965384 U JP16965384 U JP 16965384U JP S6183245 U JPS6183245 U JP S6183245U
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- heating elements
- gun
- lab
- longitudinal direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Description
第1図a,bは本考案の電子銃の概略図、第2
図は本考案の電子銃の一使用例を示した電子ビー
ムアニール装置の概略図、第3図は従来の電子銃
の概略図である。
5a,5b:カソードを成す直方体部分、6:
発熱体、7:カツプ、8a,8b:タングステン
線、9a,9b:電極。
Figures 1a and b are schematic diagrams of the electron gun of the present invention;
The figure is a schematic diagram of an electron beam annealing apparatus showing an example of the use of the electron gun of the present invention, and FIG. 3 is a schematic diagram of a conventional electron gun. 5a, 5b: rectangular parallelepiped portion forming the cathode, 6:
Heating element, 7: cup, 8a, 8b: tungsten wire, 9a, 9b: electrode.
Claims (1)
LaB6単結晶製カソード、該カソードの長手方
向に沿つて該カソード両サイドに配置された発熱
体、該発熱体に電流を供給する手段から成る電子
銃。 An electron device comprising a LaB 6 single crystal cathode whose electron emitting surface is formed in a flat line shape, heating elements arranged on both sides of the cathode along the longitudinal direction of the cathode, and means for supplying current to the heating elements. gun.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984169653U JPH0238365Y2 (en) | 1984-11-08 | 1984-11-08 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984169653U JPH0238365Y2 (en) | 1984-11-08 | 1984-11-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6183245U true JPS6183245U (en) | 1986-06-02 |
JPH0238365Y2 JPH0238365Y2 (en) | 1990-10-16 |
Family
ID=30727372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1984169653U Expired JPH0238365Y2 (en) | 1984-11-08 | 1984-11-08 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0238365Y2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017157368A (en) * | 2016-03-01 | 2017-09-07 | 株式会社日立ハイテクノロジーズ | Field emission electron source, method of manufacturing the same, and electron beam apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5796450A (en) * | 1980-12-09 | 1982-06-15 | Toshiba Corp | Electron gun |
JPS57196444A (en) * | 1981-05-26 | 1982-12-02 | Ibm | Electron beam emission device |
-
1984
- 1984-11-08 JP JP1984169653U patent/JPH0238365Y2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5796450A (en) * | 1980-12-09 | 1982-06-15 | Toshiba Corp | Electron gun |
JPS57196444A (en) * | 1981-05-26 | 1982-12-02 | Ibm | Electron beam emission device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017157368A (en) * | 2016-03-01 | 2017-09-07 | 株式会社日立ハイテクノロジーズ | Field emission electron source, method of manufacturing the same, and electron beam apparatus |
WO2017149862A1 (en) * | 2016-03-01 | 2017-09-08 | 株式会社日立ハイテクノロジーズ | Field emission electron source, method for manufacturing same, and electron beam device |
US10586674B2 (en) | 2016-03-01 | 2020-03-10 | Hitachi High-Technologies Corporation | Field emission electron source, method for manufacturing same, and electron beam device |
Also Published As
Publication number | Publication date |
---|---|
JPH0238365Y2 (en) | 1990-10-16 |