JPH0238365Y2 - - Google Patents

Info

Publication number
JPH0238365Y2
JPH0238365Y2 JP1984169653U JP16965384U JPH0238365Y2 JP H0238365 Y2 JPH0238365 Y2 JP H0238365Y2 JP 1984169653 U JP1984169653 U JP 1984169653U JP 16965384 U JP16965384 U JP 16965384U JP H0238365 Y2 JPH0238365 Y2 JP H0238365Y2
Authority
JP
Japan
Prior art keywords
cathode
electron beam
electron
line
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984169653U
Other languages
Japanese (ja)
Other versions
JPS6183245U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984169653U priority Critical patent/JPH0238365Y2/ja
Publication of JPS6183245U publication Critical patent/JPS6183245U/ja
Application granted granted Critical
Publication of JPH0238365Y2 publication Critical patent/JPH0238365Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 [産業上の利用分野] 本考案は電子ビームアニールに適した電子銃に
関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electron gun suitable for electron beam annealing.

[従来の技術] 素子を積層して高速、高密度或いは多機能を有
する三次元回路素子等の実現に絶縁膜上に堆積さ
れた多結晶物質(例、多結晶シリコン)の結晶粒
子径の増大或いは多結晶物質の単結晶化が最も重
要視されている。最近、この様な結晶粒子径の増
大化や単結晶化に最も有効な技術として、電子ビ
ームアニールが注目されている。該電子ビームア
ニールでは、通常、電子ビームを例えば、多結晶
シリコン上で集束させると同時に該多結晶シリコ
ン上で走査させアニールを行なつている。この様
な電子ビームアニールで断面形状がスポツト状の
電子ビームを使用すると、アニールの能率が著し
く悪い等の理由から、断面形状がライン状に近い
長方形状の電子ビームが使用されている。
[Prior art] Increasing the crystal grain size of polycrystalline materials (e.g., polycrystalline silicon) deposited on an insulating film to realize three-dimensional circuit elements with high speed, high density, or multifunction by stacking elements. Alternatively, the single crystallization of polycrystalline substances is considered most important. Recently, electron beam annealing has been attracting attention as the most effective technique for increasing the crystal grain size and forming single crystals. In the electron beam annealing, an electron beam is usually focused on, for example, polycrystalline silicon and simultaneously scanned over the polycrystalline silicon to perform annealing. If an electron beam with a spot-shaped cross section is used in such electron beam annealing, the efficiency of the annealing is extremely poor, so an electron beam with a rectangular cross-sectional shape that is nearly line-shaped is used.

さて、この様な電子ビームを発生する電子銃と
しては、一般に、第3図に示す様に、W線をコの
字状に形成し、各端子を加熱電線1に接続された
電極2a,2bに繋いだカソード3と、該カソー
ドの電子放出面の形状(ライン状)に相似した形
状の電子ビーム通過口を有するウエネルト4と、
アノード5から成るものが使用される。
Now, as shown in FIG. 3, an electron gun that generates such an electron beam generally has a W wire formed in a U-shape, and electrodes 2a and 2b having respective terminals connected to a heating wire 1. a cathode 3 connected to the cathode, and a Wehnelt 4 having an electron beam passage opening having a shape similar to the shape (line shape) of the electron emitting surface of the cathode;
An anode consisting of 5 is used.

[考案が解決しようとする問題点] しかし乍ら、電子ビームアニールではライン状
の電子ビームをターゲツト上に得る為に数百μm
径のW線でカソードを形成するが、W線は使事関
数が大きいので、この様は細いW線カソードから
は十分な輝度のビームが得られない。そこで、十
分な輝度のビームを得る為に、電子ビームアニー
ルにおいて通常流している電流(数十アンペア)
以上の電流を供給すると、W線カソードは直ぐ消
耗してしまう。又、W線カソードの電子ビーム放
出面の幅方向のビーム強度分布はガウス分布とな
つて一様性が悪く、所定のビーム強度のライン状
ビームがターゲツト上に得られず、ターゲツト上
に加熱斑が生じる。更に、前記した様に、電子ビ
ームアニールでは通常カソードに数十アンペアの
電流を流すので、該カソードの電子ビーム放出面
からのビームの方向をターゲツトに向う方向から
外す程度の磁界がW線カソードの周囲に発生する
(ビームに働くのはフレミングの左手の法則によ
る力である)。
[Problems that the invention aims to solve] However, in electron beam annealing, in order to obtain a line-shaped electron beam on the target, a distance of several hundred μm is required.
A cathode is formed by a W-line with a large diameter, but since the W-line has a large envoy function, a beam of sufficient brightness cannot be obtained from such a thin W-line cathode. Therefore, in order to obtain a beam of sufficient brightness, the current (several tens of amperes) that is normally applied during electron beam annealing is
If more current is supplied, the W line cathode will be quickly consumed. In addition, the beam intensity distribution in the width direction of the electron beam emission surface of the W-line cathode becomes a Gaussian distribution with poor uniformity, making it impossible to obtain a line-shaped beam with a predetermined beam intensity on the target, resulting in heating spots on the target. occurs. Furthermore, as mentioned above, in electron beam annealing, a current of several tens of amperes is normally passed through the cathode, so the magnetic field of the W-line cathode is strong enough to change the direction of the beam from the electron beam emitting surface of the cathode from the direction toward the target. (The force acting on the beam is due to Fleming's left hand rule).

本考案はこの様な問題を解決する事を目的とす
るものである。
The purpose of the present invention is to solve such problems.

[問題点を解決するための手段] 本考案の電子銃は電子放出面がフラツトなライ
ン状に形成されたLaB6単結晶製カソード、該カ
ソードの長手方向に沿つて該カソードの両サイド
に配置された発熱体、該発熱体に電流を供給する
手段から成る。
[Means for solving the problem] The electron gun of the present invention has a cathode made of LaB 6 single crystal whose electron emission surface is formed in a flat line shape, and is arranged on both sides of the cathode along the longitudinal direction of the cathode. a heating element, and means for supplying current to the heating element.

[実施例] 第1図a,bは本考案の一実施例を示した電子
ビームアニール用電子銃の概略図である。第1図
aは電子放出面方向から見た断面図、第1図bは
電子放出面方向に対し直角な方向から見た断面図
である。図中5は結晶方向110を持つ単結晶
LaB6で、長手方向の長さが10mm、幅方向の長さ
が1mm、高さ1mmの直方体5aと、該直方体の幅
方向の中央部に長手方向の長さが10mm、幅方向の
長さ0.2mm、高さ0.3〜0.4mmの直方体5bを重ねた
如き形状に加工したカソードである。6は該カソ
ードを成す直方体5aの幅方向の両サイドに配置
された発熱体(例えば、パイロリテツクグラフア
イト)である。7は前記発熱体6を介して前記カ
ソード5を収容する直方体状のカツプで、発熱性
の材料、例えばカーボンで作られている。8a,
8bはタングステン線で、共に一端が電極9a,
9bに夫々固定されており、他端が夫々前記カツ
プ7の両サイド端部に接続されている。前記電極
には加熱電源(図示せず)が繋がつている。
[Embodiment] FIGS. 1a and 1b are schematic diagrams of an electron gun for electron beam annealing showing an embodiment of the present invention. FIG. 1a is a sectional view taken from the direction of the electron emitting surface, and FIG. 1b is a sectional view taken from a direction perpendicular to the direction of the electron emitting surface. 5 in the figure is a single crystal with crystal direction 110
In LaB 6 , there is a rectangular parallelepiped 5a with a length of 10 mm in the longitudinal direction, a length of 1 mm in the width direction, and a height of 1 mm, and a rectangular parallelepiped with a length of 10 mm in the longitudinal direction and a length in the width direction in the center of the rectangular parallelepiped in the width direction. The cathode is shaped like a stack of rectangular parallelepipeds 5b with a diameter of 0.2 mm and a height of 0.3 to 0.4 mm. Reference numeral 6 denotes heating elements (eg, pyrolithic graphite) arranged on both sides in the width direction of the rectangular parallelepiped 5a forming the cathode. Reference numeral 7 denotes a rectangular parallelepiped cup that accommodates the cathode 5 via the heating element 6, and is made of a heat-generating material, such as carbon. 8a,
8b is a tungsten wire, one end of which is an electrode 9a,
9b, and the other ends are connected to both side ends of the cup 7, respectively. A heating power source (not shown) is connected to the electrode.

第2図は斯くの如き電子銃EBを設けた電子ビ
ームアニール装置の一例を示したもので、図中1
0は電子銃からの電子ビームをターゲツト(例.
多結晶シリコン)11上に集束させる為の集束レ
ンズである。12は該ターゲツト上に集束された
電子ビームを該ターゲツト上で走査させる為の偏
向器である。
Figure 2 shows an example of an electron beam annealing device equipped with such an electron gun EB.
0 targets the electron beam from the electron gun (e.g.
This is a focusing lens for focusing on the polycrystalline silicon (polycrystalline silicon) 11. 12 is a deflector for scanning the electron beam focused on the target.

先ず、加熱電源(図示せず)を作動させ、電極
9a,9b、タングステン線8a,8bを通じて
カツプ7に電流を供給する。すると、カツプ7か
ら発熱体6、カソード5へと電流が流れて、カツ
プ及び発熱体6は発熱し、該発熱によりカソード
5が1500℃前後に加熱される。そして、該カソー
ドの直方体部5bのフラツトなライン状の電子ビ
ーム放出部から電子ビームがターゲツト11方向
に発生する。該電子ビームは集束レンズ10によ
りターゲツト11上に集束される。該ターゲツト
上の電子ビームの断面は前記ライン状の電子ビー
ム放出部と相似の形状を成している。該ライン状
の電子ビームは偏向器12により該ターゲツト上
を走査するので、該ターゲツト(例.多結晶シリ
コン)はアニールされる。
First, a heating power source (not shown) is activated to supply current to the cup 7 through the electrodes 9a, 9b and the tungsten wires 8a, 8b. Then, a current flows from the cup 7 to the heating element 6 and the cathode 5, the cup and the heating element 6 generate heat, and the cathode 5 is heated to about 1500°C by the heat generation. Then, an electron beam is generated in the direction of the target 11 from the flat linear electron beam emitting portion of the rectangular parallelepiped portion 5b of the cathode. The electron beam is focused onto a target 11 by a focusing lens 10. The cross section of the electron beam on the target has a similar shape to the linear electron beam emitting section. Since the line-shaped electron beam is scanned over the target by the deflector 12, the target (eg, polycrystalline silicon) is annealed.

[考案の効果] 本考案の電子銃では、仕事関数がW線に比べ著
しく小さいLaB6でカソードを形成しているので、
電子放出面を幅数100μm程度のライン状にして
も通常の電子ビームアニールにおける電流(数十
アンペア)以下(1/10程度の電流)で十分な輝度
のビームが得られ、カソードの消耗の程度も小さ
い。又、電子ビーム放出面がフラツトなライン状
に形成されているので、幅方向のビーム強度分布
は一様となり、所定のビーム強度のライン状ビー
ムがターゲツト上に得られる。更に、通常カソー
ドに数十アンペアの電流を流すが、前記したよう
に従来のW線カソードに比べ略1/10程度の電流で
済むので、該カソードの電子ビーム放出面からの
ビームの方向をターゲツト方向から外す程度の磁
界がカソードの周囲に発生しない。
[Effects of the invention] In the electron gun of the invention, the cathode is formed of LaB 6 , which has a significantly smaller work function than the W line.
Even if the electron emitting surface is formed into a line with a width of about 100 μm, a beam of sufficient brightness can be obtained with less than the current (several tens of amperes) (about 1/10 current) of normal electron beam annealing, and the level of cathode wear is small. It's also small. Further, since the electron beam emitting surface is formed in a flat line shape, the beam intensity distribution in the width direction is uniform, and a line-shaped beam with a predetermined beam intensity can be obtained on the target. Furthermore, although a current of several tens of amperes is normally passed through the cathode, as mentioned above, the current is only about 1/10 of that of a conventional W-line cathode, so it is possible to target the direction of the beam from the electron beam emitting surface of the cathode. A magnetic field is not generated around the cathode that is large enough to deviate from the direction of the cathode.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a,bは本考案の電子銃の概略図、第2
図は本考案の電子銃の一使用例を示した電子ビー
ムアニール装置の概略図、第3図は従来の電子銃
の概略図である。 5a,5b……カソードを成す直方体部分、6
……発熱体、7……カツプ、8a,8b……タン
グステン線、9a,9b……電極。
Figures 1a and b are schematic diagrams of the electron gun of the present invention;
The figure is a schematic diagram of an electron beam annealing apparatus showing an example of the use of the electron gun of the present invention, and FIG. 3 is a schematic diagram of a conventional electron gun. 5a, 5b... Rectangular parallelepiped portion forming the cathode, 6
... Heating element, 7... Cup, 8a, 8b... Tungsten wire, 9a, 9b... Electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電子放出面がフラツトなライン状に形成された
LaB6単結晶製カソード、該カソードの長手方向
に沿つて該カソード両サイドに配置された発熱
体、該発熱体に電流を供給する手段から成る電子
銃。
The electron emitting surface is formed in a flat line shape.
An electron gun comprising a cathode made of LaB 6 single crystal, heating elements arranged on both sides of the cathode along the longitudinal direction of the cathode, and means for supplying current to the heating elements.
JP1984169653U 1984-11-08 1984-11-08 Expired JPH0238365Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984169653U JPH0238365Y2 (en) 1984-11-08 1984-11-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984169653U JPH0238365Y2 (en) 1984-11-08 1984-11-08

Publications (2)

Publication Number Publication Date
JPS6183245U JPS6183245U (en) 1986-06-02
JPH0238365Y2 true JPH0238365Y2 (en) 1990-10-16

Family

ID=30727372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984169653U Expired JPH0238365Y2 (en) 1984-11-08 1984-11-08

Country Status (1)

Country Link
JP (1) JPH0238365Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6529920B2 (en) 2016-03-01 2019-06-12 株式会社日立ハイテクノロジーズ Field emission electron source, method of manufacturing the same, and electron beam apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796450A (en) * 1980-12-09 1982-06-15 Toshiba Corp Electron gun
JPS57196444A (en) * 1981-05-26 1982-12-02 Ibm Electron beam emission device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796450A (en) * 1980-12-09 1982-06-15 Toshiba Corp Electron gun
JPS57196444A (en) * 1981-05-26 1982-12-02 Ibm Electron beam emission device

Also Published As

Publication number Publication date
JPS6183245U (en) 1986-06-02

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