JPS6182449A - Plastic molded semiconductor device - Google Patents
Plastic molded semiconductor deviceInfo
- Publication number
- JPS6182449A JPS6182449A JP59205005A JP20500584A JPS6182449A JP S6182449 A JPS6182449 A JP S6182449A JP 59205005 A JP59205005 A JP 59205005A JP 20500584 A JP20500584 A JP 20500584A JP S6182449 A JPS6182449 A JP S6182449A
- Authority
- JP
- Japan
- Prior art keywords
- plastic
- glass
- metal ring
- ultraviolet
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004033 plastic Substances 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000001721 transfer moulding Methods 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000005357 flat glass Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 7
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000035939 shock Effects 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明はプラスチックモールド型半導体装置に関し、
たとえばＥＰＲＯＭのようにプラスチックパッケージに
紫外線透過ガラスを嵌め込んだようなプラスチックモー
ルド型半導体装置の改良に関する。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a plastic molded semiconductor device,
The present invention relates to improvements in plastic molded semiconductor devices, such as EPROMs, in which ultraviolet-transmissive glass is fitted into a plastic package.
［従来の技術］
ＥＦＲＯＭは、情報を一度記憶すると、電源を遮断して
もその記憶内容が消えることがなく、紫外線を照射する
と記憶内容が簡単に消えるメモリであり、紫外線を透過
する窓ガラスを備えている。[Prior Art] EFROM is a type of memory that, once information is stored, does not disappear even if the power is cut off, and the stored contents easily disappear when exposed to ultraviolet rays. We are prepared.
窓ガラスの材料としては、石英ガラスやサファイヤガラ
スが使用されている。ところが、この窓ガラス材料とパ
ッケージ材料の温度変化に対する接合が困難であり、従
来はセラミックによるパッケージが行なわれていた。Quartz glass and sapphire glass are used as window glass materials. However, it is difficult to bond the window glass material and the package material against temperature changes, and conventionally ceramic packages have been used.
第４図は従来のセラミックパッケージで形成された半導
体ｉａｉの断面図である。まず、第４図を参照して、従
来のセラミックパッケージの半導体ＶＲ＠の構成につい
て説明する。セラミックベース１には、低鵬点ガラス２
により銀めっき板３が接着され、ざらにその上にチップ
４がはんだ付けされている。チップ４は金１１５によっ
てリードフレーム６にワイヤポンディングされる。そし
て、セラミック蓋７が低融点ガラス２により封着されて
いる。チップ４の上部には、セラミック蓋７に紫外線透
過用の窓ガラス８が取付けられている。FIG. 4 is a cross-sectional view of a semiconductor iai formed with a conventional ceramic package. First, with reference to FIG. 4, the configuration of a semiconductor VR@ of a conventional ceramic package will be described. Ceramic base 1 contains low-temperature glass 2
A silver plated plate 3 is adhered to the plate, and a chip 4 is roughly soldered thereon. Chip 4 is wire bonded to lead frame 6 with gold 115. A ceramic lid 7 is sealed with low melting point glass 2. At the top of the chip 4, a window glass 8 for transmitting ultraviolet rays is attached to a ceramic lid 7.
従来のセラミックパッケージ型ＥＰＲＯ￥は上述のごと
く構成されているが、一般にセラミック樹脂は価格が高
く、生産性が悪いという欠点があった。そこで、最近で
は、相対的に価格の安いプラスチックパッケージ型にす
ることが考えられている。The conventional ceramic package type EPRO has the structure described above, but ceramic resins generally have the drawbacks of being expensive and having poor productivity. Therefore, recently, consideration has been given to using a relatively inexpensive plastic package type.
第５図および第６図はプラスチックパッケージ型ＥＦＲ
ＯＭの製造方法を説明するための図である。次に、第５
図および第６図を参照して、プラスチックパッケージ型
ＥＦＲＯＭの製造方法について説明する。まず、第５図
に示すように、下型９に紫外線透過ガラス８と、逆にし
たリードフレーム６をセットし、ニッケル箔１ｏとサン
ドイッチしたプリプレグ樹脂１１を高温において溶胆す
る。下型９にはマグネット１４が組み込まれていて、こ
のマグネット１４によりニッケル箔１０が吸引される。Figures 5 and 6 are plastic package type EFR.
It is a figure for explaining the manufacturing method of OM. Next, the fifth
A method of manufacturing a plastic package type EFROM will be described with reference to the drawings and FIG. First, as shown in FIG. 5, the ultraviolet-transmitting glass 8 and the inverted lead frame 6 are set in the lower mold 9, and the prepreg resin 11 sandwiched with the nickel foil 1o is melted at a high temperature. A magnet 14 is incorporated in the lower die 9, and the nickel foil 10 is attracted by the magnet 14.
そのために、溶融した樹脂１１はリードフレーム６の間
隙１３から流れ込んで凝固し、空洞１５が作成される。For this purpose, the molten resin 11 flows into the gap 13 of the lead frame 6 and solidifies, creating a cavity 15.
次に、上型１６により、リードフレーム６を締め込んで
、トランスファ成型によりプラスチック１７をパッケー
ジする。このようにして成型したＥＰＲＯＭ、よ第６図
、示すよう１、チップ部が空洞になる。Next, the lead frame 6 is tightened using the upper die 16, and the plastic 17 is packaged by transfer molding. As shown in FIG. 6, the EPROM thus molded has a hollow chip portion.
［発明が解決しようとする問題点］
上述の製造方法で製造されたプラスチックパッケージ型
ＥＰＲＯＭは、樹脂１１と紫外Ｉ透過ガラス８との熱膨
張計数が異なるため、ヒートショック試論により、紫外
線透過ガラス８に割れ１２を生じたり、紫外線透過ガラ
ス８とモールドしたプラスチック１７との界面１８にす
き間が生じるという問題点があった。[Problems to be Solved by the Invention] In the plastic package type EPROM manufactured by the above manufacturing method, since the resin 11 and the ultraviolet I transmitting glass 8 have different thermal expansion coefficients, the ultraviolet I transmitting glass 8 There are problems in that cracks 12 occur in the glass and gaps are created at the interface 18 between the ultraviolet-transmitting glass 8 and the molded plastic 17.
それゆえに、この発明の主たる目的は、上述の問題点を
除去するためになされたものであり、プラスチックと窓
ガラスとの接合部にすき間を生じたり窓ガラス材料が割
れたりすることのないようなプラスチックモールド型半
導体装置を提供することである。Therefore, the main object of the present invention is to eliminate the above-mentioned problems, and to provide a method that prevents gaps from forming at the joint between the plastic and the window glass and from causing the window glass material to break. An object of the present invention is to provide a plastic molded semiconductor device.
［問題点を解決するための手段］
この発明は、トランスファ成型により半導体素子をプラ
スチックモールドする際に、紫外線透過ガラスの周囲に
粗面化した金属リングを固着したものである。[Means for Solving the Problems] According to the present invention, a roughened metal ring is fixed around an ultraviolet transmitting glass when plastic molding a semiconductor element by transfer molding.
［作用］
この発明では、紫外線透過用窓ガラス材の周囲に金属リ
ングを嵌め゛込み、化学的処理または機械的処理を施す
ことにより、プラスチックと窓ガラス材料との熱膨張係
数のａ１］を図ることができ、ざらにプラスチックと金
属リングとの接着強度を向上することができる。[Function] In this invention, a metal ring is fitted around the window glass material for transmitting ultraviolet rays, and the thermal expansion coefficient a1 between the plastic and the window glass material is achieved by applying chemical or mechanical treatment. It can roughly improve the adhesive strength between the plastic and metal ring.
［実施例］
第１図はこの発明の一実施例の断面図であり、第２因は
紫外線透過ガラスの周囲に金属リングを嵌め込んだ状態
を示す図であり、第３図は紫外線透過ガラスとそれに嵌
め込まれた金属リングの要部拡大図である。[Example] Fig. 1 is a cross-sectional view of an embodiment of the present invention, the second factor is a diagram showing a state in which a metal ring is fitted around the ultraviolet-transparent glass, and Fig. 3 is a cross-sectional view of an example of the ultraviolet-transparent glass. and an enlarged view of the main parts of the metal ring fitted therein.
第１図において、この発明の一実施例では、紫外線透過
ガラス８の周囲に金属リング１９を嵌め込む。すなわち
、−例として嵌め合い公差に縛り嵌めを用いた場合、ま
ず紫外線透過ガラス８の外９としてアルミニウムを用い
、その内径を８．００に加工する。この状態では、紫外
線透過ガラス８はアルミリング１９に入らないため、ア
ルミリング１９を４００℃に加熱する。すると、アルミ
リ線透過ガラス８を嵌め込む。そして、紫外線透過ガラ
ス８とアルミリング１９は常温に戻るときの線膨張差に
よって気密シールされる。In FIG. 1, in one embodiment of the invention, a metal ring 19 is fitted around the ultraviolet-transmissive glass 8. As shown in FIG. That is, as an example, in the case where a tight fitting is used for the fitting tolerance, aluminum is first used as the outer part 9 of the ultraviolet transmitting glass 8, and its inner diameter is processed to 8.00 mm. In this state, the ultraviolet transmitting glass 8 does not enter the aluminum ring 19, so the aluminum ring 19 is heated to 400°C. Then, the aluminum wire transmitting glass 8 is fitted. The ultraviolet transmitting glass 8 and the aluminum ring 19 are hermetically sealed due to the difference in linear expansion when the temperature returns to room temperature.
次に、嵌め込みを行なったアルミリング１９に化学的処
理または機械的処理を施し、第５図に示すようにその表
面を粗面化する。このように紫外線透過ガラス８の周囲
に金属リング１９を嵌め込んだものを用いて、前述の第
５図および第６図を説明した製造方法により、半導体素
子をプラスチックモールドする。それによって、第１図
に示すように、プラスチックモールドされた半導体装置
を構成できる。Next, the fitted aluminum ring 19 is subjected to chemical or mechanical treatment to roughen its surface as shown in FIG. Using the ultraviolet transmitting glass 8 with the metal ring 19 fitted around it, a semiconductor element is molded into plastic by the manufacturing method described above with reference to FIGS. 5 and 6. Thereby, a plastic molded semiconductor device can be constructed as shown in FIG.
なお、上述の化学的処理または機械的処理された金属リ
ング１９はプラスチック１７と強い接着力を有する。Note that the chemically or mechanically treated metal ring 19 has strong adhesion to the plastic 17.
また、この発明の一実施例における紫外Ｉ！透過ガラス
８としては、石英ガラス、サファイヤガラス、８珪酸ガ
ラスなどが用いられるが、中でも熱膨張係数の大きな硼
珪酸ガラスを用いるのが最も好ましい。また、金属リン
グ１９としては、銅。In addition, ultraviolet I! in one embodiment of the present invention! As the transparent glass 8, quartz glass, sapphire glass, 8-silicate glass, etc. can be used, but among them, it is most preferable to use borosilicate glass, which has a large coefficient of thermal expansion. Further, the metal ring 19 is made of copper.
アルミニウム、クロムなどの金属が掲げられるが、中で
もアルミニウムはプラスチック１２との接着強度が大き
いので好ましい。また、金属リング１９の化学的処理と
しては、ケミカルエツチングなどの薬品処理を用い、機
械的処理としてはショツトブラストなどを用いるのがよ
い。Metals such as aluminum and chromium are listed, and among them, aluminum is preferable because it has a high adhesive strength with the plastic 12. Further, as the chemical treatment for the metal ring 19, it is preferable to use a chemical treatment such as chemical etching, and as the mechanical treatment, it is preferable to use shot blasting or the like.
［発明の効果］
以上のように、この発明によれば、紫外線透過ガラスの
周囲に金属リングを固着してトランスファ成型により半
導体素子をプラスチックモールドするようにしたので、
紫外Ｓ透過ガラスとプラスチックパッケージとの熱膨張
係数の総和を図ることができ、さらに化学的処理または
機械的処理によりプラスチックとの強い接着力が得られ
る。したがって、ヒートショック試験またはプレッシャ
ークツカー試験に対して耐えられる安価なプラスチック
モールド型半導体装置を得ることができる。[Effects of the Invention] As described above, according to the present invention, a metal ring is fixed around the ultraviolet-transmitting glass and a semiconductor element is molded into plastic by transfer molding.
It is possible to achieve a total thermal expansion coefficient between the ultraviolet S-transmitting glass and the plastic package, and furthermore, a strong adhesive force with the plastic can be obtained by chemical treatment or mechanical treatment. Therefore, it is possible to obtain an inexpensive plastic molded semiconductor device that can withstand a heat shock test or a pressure stress test.
第１図はこの発明の一実施例の縦断面図である。
第２図は紫外線透過ガラスに金属リングを嵌め込んだ状
態を示す図である。第３図は紫外線透過ガラスとそれに
嵌め込まれた金属リングの要部拡大図である。第４図は
この発明の背景となるＥＰＲＯＭの断面図である。第５
図および第６図は従来のＥＰＲＯＭの製造方法を示す図
である。
図において、１はセラミックベース、４はチップ、５は
金線ワイヤ、６はリードフレーム、８は紫外線透過用窓
ガラス、１０はニッケル箔、１１はプリプレグ［１，１
５は空洞、１７はプラスチック、１９は金属リングを示
す。
代 理 人 大 岩 増 雄冥１
図
冥２図
第３図
第４図
第６図
手続補正書（自発）
８６８１６０年１ ．４７ 日
１、事件の表示 特願昭５９−２０５００５号２、
発明の名称
プラスチックモー〃ド聾半導体装置
３、補正をする者
５、補正の対象
明細書の発明の詳細な説明の欄
６、補正の内容
（１） 明細書第５頁第１０行、第７頁第２０行の「総
和」を「緩和」に訂正する。
（２） 明細書第６頁第１３行の「第５図」を「第３図
」に訂正する。
以上FIG. 1 is a longitudinal sectional view of an embodiment of the present invention. FIG. 2 is a diagram showing a state in which a metal ring is fitted into the ultraviolet-transmitting glass. FIG. 3 is an enlarged view of the essential parts of the ultraviolet transmitting glass and the metal ring fitted therein. FIG. 4 is a sectional view of an EPROM which is the background of this invention. Fifth
FIG. 6 and FIG. 6 are diagrams showing a conventional EPROM manufacturing method. In the figure, 1 is a ceramic base, 4 is a chip, 5 is a gold wire, 6 is a lead frame, 8 is a window glass for ultraviolet transmission, 10 is a nickel foil, 11 is a prepreg [1, 1
5 is a cavity, 17 is plastic, and 19 is a metal ring. Agent Masu Oiwa Yumei 1
Figure 2 Figure 3 Figure 6 Figure 6 Procedural amendment (voluntary) 868160 1. 47th Day 1, Incident Display Patent Application No. 59-205005 2,
Title of the invention: Plastic mode deaf semiconductor device 3, Person making the amendment 5, Detailed description of the invention in the specification subject to amendment 6, Contents of the amendment (1) Page 5, line 10, 7 of the specification Correct "sum" in line 20 of the page to "relaxation". (2) "Figure 5" on page 6, line 13 of the specification is corrected to "Figure 3."that's all
Claims (2)
め込んだプラスチックモールド型半導体装置において、 トランスファ成型により半導体素子をプラスチックモー
ルドする際に、前記紫外線透過ガラスの周囲に粗面化し
た金属リングを固着したことを特徴とする、プラスチッ
クモールド型半導体装置。(1) In a plastic molded semiconductor device in which an ultraviolet transmitting glass is fitted into a plastic package, a roughened metal ring is fixed around the ultraviolet transmitting glass when the semiconductor element is molded in plastic by transfer molding. Characteristics of plastic molded semiconductor devices.
の範囲第１項記載のプラスチックモールド型半導体装置
。(2) The plastic molded semiconductor device according to claim 1, wherein the metal ring is made of aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59205005A JPS6182449A (en) | 1984-09-28 | 1984-09-28 | Plastic molded semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59205005A JPS6182449A (en) | 1984-09-28 | 1984-09-28 | Plastic molded semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6182449A true JPS6182449A (en) | 1986-04-26 |
Family
ID=16499872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59205005A Pending JPS6182449A (en) | 1984-09-28 | 1984-09-28 | Plastic molded semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6182449A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150127046A (en) * | 2013-01-18 | 2015-11-16 | 예일 유니버시티 | Methods for making a superconducting device with at least one enclosure |
| KR20150127045A (en) * | 2013-01-18 | 2015-11-16 | 예일 유니버시티 | Superconducting device with at least one enclosure |
| US10468740B2 (en) | 2015-02-27 | 2019-11-05 | Yale University | Techniques for coupling planar qubits to non-planar resonators and related systems and methods |
| US11223355B2 (en) | 2018-12-12 | 2022-01-11 | Yale University | Inductively-shunted transmon qubit for superconducting circuits |
-
1984
- 1984-09-28 JP JP59205005A patent/JPS6182449A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150127046A (en) * | 2013-01-18 | 2015-11-16 | 예일 유니버시티 | Methods for making a superconducting device with at least one enclosure |
| KR20150127045A (en) * | 2013-01-18 | 2015-11-16 | 예일 유니버시티 | Superconducting device with at least one enclosure |
| JP2016511534A (en) * | 2013-01-18 | 2016-04-14 | イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ | Method for manufacturing a superconducting device having at least one enclosure |
| US10424711B2 (en) | 2013-01-18 | 2019-09-24 | Yale University | Superconducting device with at least one enclosure |
| US10424712B2 (en) | 2013-01-18 | 2019-09-24 | Yale University | Methods for making a superconducting device with at least one enclosure |
| US10468740B2 (en) | 2015-02-27 | 2019-11-05 | Yale University | Techniques for coupling planar qubits to non-planar resonators and related systems and methods |
| US11223355B2 (en) | 2018-12-12 | 2022-01-11 | Yale University | Inductively-shunted transmon qubit for superconducting circuits |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5893723A (en) | Manufacturing method for semiconductor unit | |
| US5436492A (en) | Charge-coupled device image sensor | |
| JPS60257546A (en) | Semiconductor device and manufacture thereof | |
| JPH0997888A (en) | Optical device and manufacture thereof | |
| JPH0222540B2 (en) | ||
| KR19980042865A (en) | Double Layer Lead Frames for Semiconductor Devices and Semiconductor Devices | |
| JPS6182449A (en) | Plastic molded semiconductor device | |
| JPH03149864A (en) | Lead frame | |
| JPH0685097A (en) | Manufacture of solid-state imaging device | |
| JPH09107054A (en) | Semiconductor device | |
| JPS58127474A (en) | Silid state image pickup device | |
| JPH02209739A (en) | Manufacture of semiconductor device | |
| JP2000200927A (en) | Manufacture of electronic component | |
| JPH04107955A (en) | Sealing method of electronic circuit element | |
| JP2000241274A (en) | Semiconductor pressure sensor, manufacture thereof and parts thereof | |
| JPH03116960A (en) | Semiconductor device | |
| JPH0312467B2 (en) | ||
| JPS5833493B2 (en) | How to assemble a pressure sensitive element | |
| JPH0455332B2 (en) | ||
| JP2807472B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH01117348A (en) | Manufacture of semiconductor package | |
| JPH02142165A (en) | Case for semiconductor optical sensor | |
| JP2531441B2 (en) | Semiconductor device | |
| JPH0745802A (en) | Solid-state image pickup device | |
| JPH02292848A (en) | Formation of polyimide film for lead frame |