JPS6181005A - Oscillating circuit - Google Patents

Oscillating circuit

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Publication number
JPS6181005A
JPS6181005A JP20467684A JP20467684A JPS6181005A JP S6181005 A JPS6181005 A JP S6181005A JP 20467684 A JP20467684 A JP 20467684A JP 20467684 A JP20467684 A JP 20467684A JP S6181005 A JPS6181005 A JP S6181005A
Authority
JP
Japan
Prior art keywords
output
input
layer
conductor layer
difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20467684A
Other languages
Japanese (ja)
Inventor
Hitoshi Ikeno
均 池野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seikosha KK
Original Assignee
Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seikosha KK filed Critical Seikosha KK
Priority to JP20467684A priority Critical patent/JPS6181005A/en
Publication of JPS6181005A publication Critical patent/JPS6181005A/en
Pending legal-status Critical Current

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  • Oscillators With Electromechanical Resonators (AREA)

Abstract

PURPOSE:To prevent the degradation of characteristics of an oscillator by constituting an input-side load capacity and an output-side load capacity with input-side and output-side fixed capacitor parts and variable capacitor parts and removing a conductor layer of variable capacitor parts at least to adjust the oscillated frequency. CONSTITUTION:In case of adjustment of the oscillated frequency of a crystal oscillator, a conductor layer 26 appearing in a through hole 27a of a top dielectric layer 27 is removed by the sand blast method or the like to reduce capacity values of input-side and output-side variable capacitors 14 and 15 of the oscillating circuit. The difference between capacity values in the input side and the output side is maximum 3PF though a nozzle (omitted in the figure) of a sand blast device is moved from one end side to the other of the through hole 27a, and the difference between said capacity values is reduced if the nozzle is moved minutely to the right and the left from the center. Since the difference between capacity values in the input side and the output side of the oscillating circuit is reduced in this manner, the power source voltage frequency characteristic of the crystal oscillator is improved.

Description

【発明の詳細な説明】 (埋業上のオリ用分野) 本発明(櫨時社やむ気04などに用いる水晶発復器など
の発(辰≠1に1列するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Orientation) The present invention (device of crystal generators etc. used in Hijisha Yamuki 04, etc.) (one row where Tatsu≠1).

(従来の技術) 従来の技術として′2I−願出願人の出願にかかる特開
昭57−26905号公報に示されるものがある。この
技術によると、発振周波数の調整は発振回路の入力側に
接続された可変コンデンサ部のみの容素を減少させて行
っている。
(Prior Art) A conventional art is disclosed in Japanese Patent Laid-Open No. 57-26905 filed by the applicant '2I. According to this technique, the oscillation frequency is adjusted by reducing the capacitance of only the variable capacitor section connected to the input side of the oscillation circuit.

(発明が解決しょうとする間頂点) このためi5T変二/デンサ部の容量が大きく減少さt
Lfc揚甘、発せ回路の入力測負荷容訃と出力測負萌谷
曾の是が大きくアノバラメスとなり、′戒源選圧周波砿
特注が劣[ヒしたりするという間誂点が生じている。
(Top point while the invention is trying to solve the problem) As a result, the capacity of the i5T converter/capacitor section is greatly reduced.
There has been a point where the input measurement load characteristics and output measurement characteristics of the LFC increase and the output circuit have become greatly unbalanced, and a point has arisen where the special order of the source selection frequency has become inferior.

(間朗点を解決するための手段) 本発明は入力1則負荷容肴と出力100負荷容tとtて
九ぞ良導体層と誘二体層とを積層して形l永した固定コ
ツプ/す部と可変;/デノサ部とから購反している。
(Means for Solving the Problems) The present invention provides a fixed chip with an input load capacity of 1 law, an output load capacity of 100, and a fixed chip having a long shape by laminating a good conductor layer and a dielectric layer. It is purchased from the department and variable;/denosa department.

(作用) こV=うに入力側町!コンデンサ部と出力!11町変コ
ンデンサ部との′8−惜をl酸受させるため、入力側負
荷容量と出力側負荷容量との差が大きくならス、アンバ
ランスが生じない。この念め発振器の特注が劣化するこ
とはなくなる。
(Effect) Ko V = sea urchin input side town! Capacitor section and output! Since the difference between the capacitor section and the capacitor section is equal to that of the capacitor section, unbalance will not occur if the difference between the input-side load capacitance and the output-side load capacitance is large. This custom made oscillator will never deteriorate.

(≠別例) 第1〜5図KRいて、封止各41は、気密ガラス2によ
り複数の端子ビンを密層固定した気密端子3と、この気
密端子に冷開圧接などに工り密封固泄されるキャップ4
とから構成されている。保愕端子ピ15,6の上端Kに
封止容器1円において保持バネ7.8が導電性接泗削な
どにエリ導通固定されている。保持バネ7.8の闇には
水晶振動子9が導電性接眉削などに工り支持され、保持
端子ビ15.6はそれぞn電離9a、9bと導通してい
る。気密端子3の上面には封止容器1内に2いて水晶振
動子9を発振させる発振回路お:びその信号を分周する
分周回路など?含む集積回路素子10が接潰しである。
(≠Another example) In Figs. 1 to 5 KR, each seal 41 includes an airtight terminal 3 in which a plurality of terminal bins are fixed in a close layer with an airtight glass 2, and a hermetically sealed terminal by cold-open pressure welding or the like to this airtight terminal. Excreted cap 4
It is composed of. A retaining spring 7.8 is fixed to the upper end K of the retaining terminal pins 15, 6 in a sealed container 1 yen with conductive cutting or the like. A crystal oscillator 9 is supported by a conductive eyepiece or the like behind the holding spring 7.8, and the holding terminals 15.6 are electrically connected to the n-ions 9a and 9b, respectively. On the top surface of the airtight terminal 3, there is an oscillation circuit that is placed inside the sealed container 1 to oscillate the crystal resonator 9, and a frequency dividing circuit that divides the frequency of the signal. The included integrated circuit element 10 is a contact crusher.

そして集積直路素子10の谷パッド部工り気密端子3の
各端子ビンにワイマボンデイングされている。気f端子
50下7>ノ凹部5aに′/i配)9基板11が設けて
あり、所定の端子ピノに4℃件接慴削などにエリ導通固
定しである。配線基板11はセラミック基板に導体1層
と誹こ体層とを積層して形b5Fしてあり、端子ピ/同
士を接続するとともに、第5図示の発七回路の入力側固
定コンデンサ12、出力1別置足コンデンサ15、入力
1−11可変コンデンサ14お工び出力側可変コ/デフ
す15を設けである。16は帰還抵抗% 17は一1ノ
パータである。
Then, the valley pad portion of the integrated direct circuit device 10 is wire-bonded to each terminal pin of the hermetic terminal 3. A PCB 11 is provided in the concave portion 5a at the bottom of the terminal 50, and is fixed to a predetermined terminal pin for electrical conduction by contacting and cutting at 4°C. The wiring board 11 has a shape B5F in which one conductor layer and a dimple layer are laminated on a ceramic board, and it connects the terminal pins to each other, and also connects the fixed capacitor 12 on the input side of the oscillator circuit shown in Figure 5, and the output side. 1 separate foot capacitor 15, input 1-11 variable capacitor 14, and output side variable co/def. 15 are provided. 16 is a feedback resistance %, and 17 is an 11-no-parter.

ここで第4〜15図を参照して配線基板11について詳
説する。基板18はアルミナ磁器、ステアタイト磁器な
どから形成され、外周部に気密端子3の各端子ビ/を避
ける切欠部18a、18b・・・1812工ひ透孔部”
 8jが形成しである。切欠部18a、18bには気密
端子6の出力端子ビ/19 a 、 19 bが対応し
、切欠118cには保持端子ビン5が対応する。また切
欠部18dにはX T 4子ピノ19(が、切欠fli
18eにはVBe端子ピ/19dが対応する。さらに切
欠e18f。
Here, the wiring board 11 will be explained in detail with reference to FIGS. 4 to 15. The substrate 18 is made of alumina porcelain, steatite porcelain, etc., and has cutouts 18a, 18b, .
8j is the formation. The output terminal pins 19 a and 19 b of the airtight terminal 6 correspond to the notches 18 a and 18 b, and the holding terminal pin 5 corresponds to the notch 118 c. In addition, the notch 18d has an X T quadruple pinot 19 (but the notch fli
18e corresponds to VBe terminal pin/19d. Furthermore, notch e18f.

1層gVcは他の出カビ/19θ、19fが刈応し、切
欠部18hlcl−j保持端子ビ/6が対応する、そし
て切欠部18−、にはXT端子ビ/19gが対応し・d
孔e18jにはVDD端子ビン19hが対応する。基板
18には第4〜15図示の導体層20、誘電体層21、
導体1d22、誘電体)I423.)J体J特24、誘
゛屯体層25、導体1藷26、誘;体層27が顕の積層
され、暁叙さ几ている。導体;φ20.22,24.2
6は4体としてタノグステンの微粉末を含むffl ?
!ペースト?印刷して形成している。また誘電体層21
,25,25,277儂アルミナ磁器などの微粉末を含
む誘電体ペーストを臼刷して形す又している。第5図示
の4体層20(C1二つの電極20a、2[]、b工り
構成され、電極20aは切欠部18c 、 1 adを
従dして保愕泪子ビン5とXT4子ビン19cとf a
 hwす6とともに入力側固定コンデンサ12の一刀の
;極となっている。また;極20bに切欠部18n。
The first layer gVc corresponds to the other mold/19θ, 19f, and the notch 18hlcl-j corresponds to the holding terminal B/6, and the notch 18- corresponds to the XT terminal B/19g.
The VDD terminal bin 19h corresponds to the hole e18j. The substrate 18 includes a conductor layer 20, a dielectric layer 21, and
Conductor 1d22, dielectric) I423. ) A J body J layer 24, a dielectric layer 25, a conductor layer 26, and a dielectric layer 27 are laminated to reveal the dawn. Conductor; φ20.22, 24.2
6 is ffl containing fine powder of tanogsten as 4 bodies?
! paste? It is printed and formed. Also, the dielectric layer 21
, 25, 25, 277 The dielectric paste containing fine powder of alumina porcelain or the like is pressed and shaped. The 4-body layer 20 (C1 shown in FIG. and fa
Together with hw6, it serves as one pole of the input side fixed capacitor 12. Also; a notch 18n in the pole 20b.

18iを従dして保汚端、子ビン6とデT鴻子ピノ19
gとを接続するとともに出力1μ1lL8ill定二/
デ/す13の一方の′r&仏となっている。導体層20
の上部に誘tO!:層21が形叙され、その上部に6体
瀾22が形叙、されている。導体層22は中央に透孔J
、(22aが形叙さ1、vDD端子ピ/19hに受伏す
るための延出fi22bが形成しである。導体−22は
入力側j2工ひ出力中1の固定コンデンサ12、i3の
千間電極となっている。導体層22の上部に誘電体1(
至)25が形成され、その上部に1体層20と同形状の
導体層24が形叙されている。
18i is attached to the dirt-retaining end, child bottle 6 and deT Koko Pino 19
g and the output 1μ1L8ill constant 2/
It is 'r & Buddha on one side of de/su 13. conductor layer 20
Kidnapped at the top of the page! : A layer 21 is depicted, and six bodies 22 are depicted above it. The conductor layer 22 has a through hole J in the center.
, (22a is shown as 1, and an extension fi 22b is formed to be connected to the vDD terminal pin/19h. The conductor 22 is connected to the fixed capacitor 12 of the input side j2, the fixed capacitor 12 of the output middle, and the 1,000m of i3. The dielectric 1 (
) 25 is formed, and a conductor layer 24 having the same shape as the one-piece layer 20 is formed on top of it.

dE;*24のii%124af’!入力側固9 コア
 97 ”j12の他方のt極となっているとともに入
力側可変コンデンサ14の一刀・の電極となっている。
dE;*24 ii%124af'! It serves as the other t-pole of the input-side fixed core 97''j12, and also serves as the electrode of the input-side variable capacitor 14.

1f′c区極24b(士出力側固定コンデンサ15の他
Zの電極となっているとともに出力症可変コンデンサ1
5の一刀の電極となっている。導体層24の上部に誘電
体1j25が形成され、その上部に導体I捕26が形叙
さ几ている。1体゛層26に入力1t1.11および出
力側=1変コツプ/す14.15の他方の電極となって
29、VDD端子ビニz19hK接峨する念めの延出都
26aが形成しである。導体rc126の上部1(形成
され九d1体層27には中央に透孔邪27aが7収して
あり、 この透孔部は導体層22の透孔部22aと同−
杉状となっている。上記の6体1西、誘ト体屓は第15
図示のように槓LQされ、入力III Ii!ll’i
コ/デ/す1コン4体td 20 (r)電極20 a
 、導体rgi 22 sr xひm江1m24の1極
24aと、こ几らのl141に位1gするaAi ur
、 体421r23とから構成される。ま定出力側固定
コンデンサ13は導体層20の電極20 b、4体ノー
222工び導体層24のTl1i * 2’ bと、こ
れらの闇に位jする誘d体萌21.25とから構aされ
る。上記の両固定コンデンサ12.15は、中間のvm
端子に耐αされる4体層22と、その上下に位置する導
体層20.24との闇で4竜が形5y、され、導体層2
0.24は外周にて接続されている。入力側可変コンデ
ンサ14ば4体j−24の電+!124a、導体l菫2
62Lひこれらの闇に位置する誘シ体層25から形叙さ
れ、出力側1町変コンデンサ’l5jPi導体層24の
に極24b14体+6262工ひこれらの闇に位置する
銹成体層25がら形成される。両oI変コンデンサ14
.1’5は最上部の誘電体・づ27にて+ii 7) 
rL、透孔部27a工り現われている導体It! 26
 fサンドブラスト法などにニジ除云して答陵1直を減
少可能である。本実姉例では入力側の固定コンデンサ1
2と可変コンデンサ14とのせ討の写を値は約30PF
K設定してあり、可変コ/テノサ14の透孔部27aに
相当する可変容量11i!は杓5PFに設定しである。
1f'c terminal 24b (besides the output side fixed capacitor 15, it also serves as the Z electrode and the output side variable capacitor 1
It is the electrode of 5. A dielectric 1j25 is formed on the top of the conductor layer 24, and a conductor I trap 26 is formed on top of the dielectric 1j25. An extension cap 26a is formed on the one-piece layer 26 to serve as the other electrode of the input 1t1.11 and the output side = 1 change tip 14.15, and connect it to the VDD terminal pin z19hK. . The upper part 1 (formed) of the conductor rc126 has seven through holes 27a in the center, and these through holes are the same as the through holes 22a of the conductor layer 22.
It has a cedar shape. The above 6 bodies are 1st west, and the lure body is the 15th one.
As shown in the figure, the input III Ii! ll'i
Co/De/S 1 con 4 pieces td 20 (r) electrode 20 a
, conductor rgi 22 sr
, and the body 421r23. The constant output side fixed capacitor 13 is composed of an electrode 20b of the conductor layer 20, Tl1i*2'b of the four-layer conductor layer 24, and a dielectric material 21.25 located behind these electrodes. a. Both fixed capacitors 12.15 above are connected to the intermediate vm
The four-body layer 22 that resists α to the terminal and the conductor layers 20 and 24 located above and below form a four-dragon shape 5y, and the conductor layer 2
0.24 are connected at the outer periphery. Input side variable capacitor 14 4 body j-24 power +! 124a, conductor l violet 2
62L is formed from the dielectric layer 25 located in the dark side of these, and the output side 1 town change capacitor'l5jPi conductor layer 24 is formed from the electrode 24b14 body + 6262 wire. Ru. Both oI variable capacitors 14
.. 1'5 is the top dielectric 27+ii 7)
rL, the conductor It! exposed through the hole 27a! 26
It is possible to reduce the number of shifts required by sandblasting and other methods. In this example, fixed capacitor 1 on the input side
2 and variable capacitor 14, the value is about 30PF
K is set, and the variable capacitance 11i corresponds to the through hole 27a of the variable cap/tenosa 14! is set to 5PF.

出力側の固定コンデンサ15と可変コンデンサ15につ
い1も同様の容量1直としている。
The fixed capacitor 15 and the variable capacitor 15 on the output side each have a single capacitance.

不発明は上記構成であり、つき゛に動作について呪明す
る。水晶発盪器の発振周波数を調整すると@は、サンド
ブラスト法などに工り最上層の誘電体l−27の透孔部
27aLシ現われている導体j−26を除云し、発振回
路の入力側および出力側の可変コンデンサ14.15の
容量値を減少させて行う。す/ドブラスト装置のノズル
(図示せず。)を透孔部27aの一端側から他端側に移
動させた揚台でも入力側と出刃側との容量値の差は最大
3PFであう、ノズルを中央;すEE万に振分けて微□
□□させる工うにした揚台は容鴬唾の差はさらに小さく
なる。この工うに発振回路の入力41+1と出力側との
容量値の差を小さくできるため、水晶発振器の;l、l
Fこ圧周波数吋注4は良好となる。また最上部TJ迫ノ
ーの4体rd26全削つ1調整するため、サンドブラス
ト−a+aの加工パワーが少くてすみ、調整時−jを短
縮でき、短絡の可能性を少くできる。
The non-inventiveness is the above configuration, and the operation is always a curse. When the oscillation frequency of the crystal oscillator is adjusted, the conductor j-26 exposed through the hole 27aL of the top layer dielectric l-27 is removed by sandblasting, etc., and the input side of the oscillation circuit is And this is done by decreasing the capacitance value of the variable capacitors 14 and 15 on the output side. Even on a platform where the nozzle (not shown) of the blasting device is moved from one end of the through-hole section 27a to the other end, the difference in capacitance between the input side and the output side is at most 3PF. ;Distribute to EE million and fine □
The difference in appearance will be even smaller if the platform is designed to do □□. In this way, the difference in capacitance between the input 41+1 and the output side of the oscillation circuit can be reduced, so
F pressure frequency 吋Note 4 is good. In addition, since the 4 rd26 parts of the top TJ sokono are all removed and adjusted, the machining power of sandblasting -a+a can be reduced, and -j can be shortened during adjustment, reducing the possibility of short circuits.

またさ]定ココンノサ+2.+3の中山]の導体層22
<、可変コンデノー714.15の調整品分に相当する
C孔部27aと1司形状の透孔部22a亡役けているた
り、す/ドブラスト装置Rに工り呆ぐ門すリ;邑さ% 
誘電体1・Δ25、導体1ψ24ざらに下1&1で6り
沙込んだ揚台でも、2.4体層24.2Qj仁1fl−
誼であるためgQ値は変化すること(仁ない。このため
に4精中に深(1111’)過ぎた場甘でも、4酋1面
が太・帳に変化して調整不能となることζでい2な2本
実掲例では8体・−士タングスナ7ペースト土用いたが
、モリツブ/、マンガ/などの微粉末や畑の導体d末を
含むものでも;いうまた誘成体層もアルζナベ−ストの
「湯にステア4づト磁器、カラスなどのi!、粉末全ざ
むちのでも:い。
Matasa] Teikokonnosa +2. +3 Nakayama] conductor layer 22
<, The C hole part 27a corresponding to the adjustment part of the variable condenser 714.15 and the one-shaped through hole part 22a are not working, and the gate that is made in the blasting device R; %
Dielectric 1・Δ25, conductor 1ψ24 Even on a platform with 6 layers of bottom 1 & 1, 2.4 body layers 24.2Qj 1fl-
Because it is yi, the gQ value changes (there is no jin. For this reason, even if it is too deep (1111') in 4 sei, the 4 xi 1 side will change to tai / net and it will be impossible to adjust.ζ In the two actual examples, 8 pieces of paste were used, but materials containing fine powders such as molytubu/manga/ and field conductor powder may also be used; ζ Nabeest's ``Hot water, porcelain, crow, etc.'', powder all the way.

(発明の効果) 本発明IC:九ば、発振回路の入力側、出力側の負荷各
端のMを小さくでき、電源電圧周波か時性を良好にでき
る−また周波:2調整は短時間で行え、短絡の可能性も
/新めて少い。
(Effects of the invention) The IC of the present invention: First, it is possible to reduce M at each end of the load on the input side and output side of the oscillation circuit, and the power supply voltage frequency and time characteristics can be improved. Do it, and the possibility of a short circuit is new/lower.

【図面の簡単な説明】[Brief explanation of the drawing]

、A面は不発明の一笑全例を示し、藁1図は断面図、第
2図は底面図、第3図は回路図、第4図は配線基数の拡
大正面図、第5.7,9.11図はそれぞ几遂体1暑の
拡大正面図、第6.8,10゜12図はそ九ぞ1誘電体
j−の拡大正面図、第13−A(ケ第41要■−瓶線拡
大断面図である、9・・・水晶退女子 11・・・配J基根 12・・・入力側一定ニノデンサ 15・・・出力1111固定;/デンサ14・・・入力
側OJfコンデンサ 1ン・・出力11+157変コ/、声’!、す20.2
2,24.26・・導体jI3!i21.25,25.
27・・・誘ζ体層以   上
, Side A shows all examples of non-inventions, Figure 1 is a cross-sectional view, Figure 2 is a bottom view, Figure 3 is a circuit diagram, Figure 4 is an enlarged front view of the number of wiring bases, and Figure 5.7. Figure 9.11 is an enlarged front view of the converter 1, Figures 6.8 and 10, Figures 6.10 and 12 are enlarged front views of the dielectric 1, and 13-A (41st main point). - Bottle line enlarged sectional view, 9...Crystal recessed girl 11...J base 12...Input side constant Ninodenser 15...Output 1111 fixed; /Capacitor 14...Input side OJf capacitor 1n...output 11+157 odd/, voice'!, 20.2
2,24.26...Conductor jI3! i21.25,25.
27...Dioxide layer or above

Claims (1)

【特許請求の範囲】 圧電振動子と、この圧電振動子を発振させる発振回路と
、この発振回路の入力側および出力側に接続された入力
側負荷容量および出力側負荷容量とを設けてあり、 上記入力側負荷容量および出力側負荷容量はそれぞれ、
導体層と誘電体層とを多層に形成した入力側および出力
側の固定コンデンサ部と、上部の入力側および出力側の
可変コンデンサ部とから構成され、上記可変コンデンサ
部の少くとも導体層を除去して発振周波数を調整するこ
とを特徴とする発振器。
[Claims] A piezoelectric vibrator, an oscillation circuit for oscillating the piezoelectric vibrator, and an input-side load capacitor and an output-side load capacitor connected to the input side and the output side of the oscillation circuit are provided, The above input side load capacity and output side load capacity are respectively,
It consists of a fixed capacitor section on the input side and output side, which has a multilayer conductor layer and a dielectric layer, and a variable capacitor section on the input side and output side in the upper part, and at least the conductor layer of the variable capacitor section is removed. An oscillator characterized in that the oscillation frequency is adjusted by adjusting the oscillation frequency.
JP20467684A 1984-09-28 1984-09-28 Oscillating circuit Pending JPS6181005A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20467684A JPS6181005A (en) 1984-09-28 1984-09-28 Oscillating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20467684A JPS6181005A (en) 1984-09-28 1984-09-28 Oscillating circuit

Publications (1)

Publication Number Publication Date
JPS6181005A true JPS6181005A (en) 1986-04-24

Family

ID=16494447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20467684A Pending JPS6181005A (en) 1984-09-28 1984-09-28 Oscillating circuit

Country Status (1)

Country Link
JP (1) JPS6181005A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008026079A (en) * 2006-07-19 2008-02-07 Matsushita Electric Works Ltd Infrared detector and its manufacturing method
WO2021117396A1 (en) * 2019-12-11 2021-06-17 株式会社スリーボンド Cationically curable composition, cured product, and joined body

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726903A (en) * 1980-07-24 1982-02-13 Seikosha Co Ltd Oscillator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726903A (en) * 1980-07-24 1982-02-13 Seikosha Co Ltd Oscillator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008026079A (en) * 2006-07-19 2008-02-07 Matsushita Electric Works Ltd Infrared detector and its manufacturing method
WO2021117396A1 (en) * 2019-12-11 2021-06-17 株式会社スリーボンド Cationically curable composition, cured product, and joined body

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