JPS6177636A - Glass composition for glaze - Google Patents
Glass composition for glazeInfo
- Publication number
- JPS6177636A JPS6177636A JP19913484A JP19913484A JPS6177636A JP S6177636 A JPS6177636 A JP S6177636A JP 19913484 A JP19913484 A JP 19913484A JP 19913484 A JP19913484 A JP 19913484A JP S6177636 A JPS6177636 A JP S6177636A
- Authority
- JP
- Japan
- Prior art keywords
- glaze
- glaze layer
- glass composition
- ceramic substrate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はセラミック基板のグレーズに適したガラス組成
物に関し、より詳細にはメタライズ金属部を有するセラ
ミック基板のグレーズに適したガラス組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a glass composition suitable for glazing ceramic substrates, and more particularly to a glass composition suitable for glazing ceramic substrates having metallized metal parts.
（従来の技術）
セラミック基板の表面にガラスから成るグレーズ層を溶
着させたグレーズドセラミック基板は基板表面の平滑性
が優れていることから薄膜電気配線を形成する基板とし
て多用されている。(Prior Art) A glazed ceramic substrate, in which a glaze layer made of glass is welded to the surface of a ceramic substrate, is often used as a substrate for forming thin-film electrical wiring because the substrate surface has excellent smoothness.
この従来のグレーズドセラミック基板は通常、アルミナ
、ベリリアから成るセラミック基板の表面に、例えばＳ
ｉｎｇ ４０ ｗｔ％、 ＡＪ２Ｏｇ ３″ＦｔＪ％。This conventional glazed ceramic substrate is usually made of alumina, beryllia, etc.
ing 40 wt%, AJ2Og 3″FtJ%.
ｃａｏ Ｂ ｗｔ％、 Ｂ２Ｏ３６ｗｔ％、 ＰｂＯ２
ｓ ｗｔ％、 ＢａＯ３ｗｔ％、 Ｂ１２Ｏｓ ５ ｗ
ｔ％から成るガラス粉末に適当な粘結剤及び溶剤を添加
してペースト状となしたものをスクリーン印刷法により
塗布するととも１こ大気中、約１２Ｏ０℃の温度で焼成
し、ガラス粉末を熔融させ、セラミック基板表面ｔζ溶
着させることによって作製されている。cao B wt%, B2O36wt%, PbO2
s wt%, BaO3wt%, B12Os 5w
A paste made by adding a suitable binder and a solvent to glass powder consisting of 1.5 t% is applied by screen printing, and then fired in the atmosphere at a temperature of about 1200°C to melt the glass powder. The ceramic substrate surface tζ is then welded.
（発明が解決しようとする問題点）
しかし乍ら、この従来のグレーズドセラミック基板は、
セラミック基板がタングステン（Ｗ）、モリブデン（Ｍ
ｏ）等から成るメタライズ金属部を有している場合、セ
ラミック基板表面１こグレーズ層を溶着させる際、セラ
ミック基板を大気中で焼成するとセラミック基板のメタ
ライズ金属部が酸化されて完全に消滅してしまうという
欠点を有していた。(Problems to be solved by the invention) However, this conventional glazed ceramic substrate
The ceramic substrate is made of tungsten (W) and molybdenum (M).
o) If the ceramic substrate has a metallized metal part consisting of such as It had the disadvantage of being stored away.
またメタライズ金属部の酸化消滅を防止するためにグレ
ーズ用ペーストが塗布されたセラミック基板を還元雰囲
気中で焼成するとガラス粉末中の主にＰＩ）○が還元さ
れて溶着されるグレーズ層を黒色化させたり、導電性と
なしてしまい、その結果グレーズ層上に形成される微細
電気配線の各配線間が短絡し、微細電気配線基板として
の機能に支障を来たすという重大な欠点を誘発する。In addition, in order to prevent oxidation and disappearance of metallized metal parts, when a ceramic substrate coated with a glaze paste is fired in a reducing atmosphere, mainly PI)○ in the glass powder is reduced and the glaze layer to be welded becomes black. This causes a serious drawback in that the fine electrical wiring formed on the glaze layer becomes short-circuited and its function as a fine electrical wiring board is impaired.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
メタライズ金属部を有するセラミック基板表面にグレー
ズ層を溶着させる際、還元雰囲気中で焼成したとしでも
グレーズ層が黒色化したり、微細電気配線基板としての
機能に支障を来たすような電気絶縁性の劣化が皆無であ
るグレーズ用ガラス組成物を提供することにある。(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and its purpose is to prevent the glaze layer from becoming black even when fired in a reducing atmosphere when welding a glaze layer to the surface of a ceramic substrate having a metallized metal part. It is an object of the present invention to provide a glass composition for glaze that is free from deterioration of electrical insulation properties such as oxidation or deterioration of electrical insulation that would impede its function as a fine electrical wiring board.
（問題点を解決するための手段）
本発明のグレーズ用ガラス組成物は重量百分率テＳｉ、
Ｏｇ ６０〜８０％、 Ｂ１１０ａ １０〜２５％、
ＢａＯ２〜１０％、 Ａ／！２Ｏ３０．５〜１０％、お
よびアルカリ金属酸化物の少なくとも一種１〜１５％か
ら成ることを特徴とするものである。(Means for solving the problems) The glass composition for glaze of the present invention has a weight percentage of TeSi,
Og 60-80%, B110a 10-25%,
BaO2~10%, A/! It is characterized by comprising 0.5 to 10% of 2O3 and 1 to 15% of at least one kind of alkali metal oxide.
本発明のグレーズ用ガラス組成物において使用されるＳ
ｉ、Ｏｇ及びＢ２Ｏ３はグレーズ層を構成するガラスの
主成分であり、Ｓｉｎｇはその添加量が６０ｗｔ％未満
であれば、グレーズ層の耐薬品性が劣化し、薄膜電気配
線を形成する際等に詔いて薬品が付着すると侵蝕を受け
、良好な電気配線ができない。S used in the glass composition for glaze of the present invention
i, Og, and B2O3 are the main components of the glass constituting the glaze layer, and if the amount of Sing added is less than 60 wt%, the chemical resistance of the glaze layer will deteriorate, and it will be difficult to use when forming thin film electrical wiring, etc. If chemicals adhere to the surface, it will be eroded and it will not be possible to make good electrical wiring.
また６０ｗｔ％以上であればグレーズ層の熱膨張係数が
セラミック基板のものより大となってグレーズ層にクラ
ックや剥離を発生してしまう。Moreover, if it is more than 60 wt%, the thermal expansion coefficient of the glaze layer will be larger than that of the ceramic substrate, resulting in cracking or peeling of the glaze layer.
またＢｇＯｓはその添加量がｔｏ ｗｔ％未満であると
グレーズ層の表面が結晶化して表面粗さが犬となり微細
電気配線が形成できず、また２５ ｗｔ％以上であると
グレーズ層の耐水性が劣化し薄膜電気配線を形成する際
あるいは大気中に含まれる水分の付着により侵蝕を受は
良好な電気配線ができない。よってＳｉ、０２及びＢｓ
Ｏｓはそれぞれその添加量が６０〜８０ｗｔ％及び１０
〜２５ ｗｔ％の範囲に特定される。Furthermore, if the amount of BgOs added is less than 25 wt%, the surface of the glaze layer will crystallize and the surface roughness will increase, making it impossible to form fine electrical wiring, and if it is more than 25 wt%, the water resistance of the glaze layer will deteriorate. If the thin film electrical wiring deteriorates and is corroded when forming thin film electrical wiring or by adhesion of moisture contained in the atmosphere, good electrical wiring cannot be formed. Therefore, Si, 02 and Bs
The amount of Os added is 60-80wt% and 10%, respectively.
~25 wt%.
更にＢａＯはグレーズ層の結晶化を抑制するとともに軟
化点の低下を防止する成分であり、その添加量が２ ｗ
ｔ％未満であれば前記性質は付与されず、ＩＱ ｗｔ％
以上であればグレーズ層の熱膨張係数がセラミック基板
のものより大となってグレーズ層にクラックや剥離を発
生してしまうことからその添加量は２〜１０ ｗｔ％の
範囲に特定される。Furthermore, BaO is a component that suppresses crystallization of the glaze layer and prevents a decrease in the softening point, and the amount added is 2 w.
If it is less than t%, the above properties are not imparted, and IQ wt%
If it is more than that, the coefficient of thermal expansion of the glaze layer will be larger than that of the ceramic substrate, causing cracks and peeling in the glaze layer, so the amount added is specified in the range of 2 to 10 wt%.
またＡｌ２Ｏ５はグレーズ層の結晶化を抑制する成分で
あり、その添加量がＱ、５ ｗｔ％未満であれば前記性
質は付与されず、またＩＱ ｗｔ％以上であればグレー
ズ層表面の表面粗さが大となって良好な電気配線ができ
なくなることから０．５〜ｔｏｗｔ％の範囲に特定され
る。In addition, Al2O5 is a component that suppresses crystallization of the glaze layer, and if the amount added is less than Q, 5 wt%, the above properties will not be imparted, and if it is more than IQ wt%, the surface roughness of the glaze layer surface will be reduced. It is specified to be in the range of 0.5 to towt% because it becomes difficult to form good electrical wiring.
また、アルカリ金属酸化物、例えばに２Ｏ 、 Ｎａｇ
Ｏ、Ｌｉ２Ｏはグレーズ層の熱膨張係数を調整する成分
であり、その添加量が１ ｗｔ％未満であれば前記性質
は付与されず、また１５ ｗｔ％以上であればグレーズ
層の熱膨張係数がセラミック基板のものよりも大となっ
てグレーズ層にクラックや剥離を発生してしまうことか
らその添加量は１〜１５ｗｔ％の範囲に特定される。Also, alkali metal oxides, such as 2O, Nag
O and Li2O are components that adjust the thermal expansion coefficient of the glaze layer, and if the amount added is less than 1 wt%, the above properties will not be imparted, and if it is 15 wt% or more, the thermal expansion coefficient of the glaze layer will be adjusted. Since it is larger than that of the ceramic substrate and causes cracks and peeling in the glaze layer, the amount added is specified in the range of 1 to 15 wt%.
（実施例） 次に本発明を実施例に基づいて説明する。(Example) Next, the present invention will be explained based on examples.
出発原料としテＳｉＯ＋ 、 ＢｓＯ３，ＢａＯ、Ａ１
２Ｏａ及びアルカリ金属酸化物（Ｋ２Ｏ、Ｎａ２Ｏ、Ｌ
ｉ−ｇｏ ） 全下表に示した化学組成になるように秤
量し、これを空気中、約１４００℃の温度で加熱溶融し
、ガラスを作成する。As starting materials, SiO+, BsO3, BaO, A1
2Oa and alkali metal oxides (K2O, Na2O, L
i-go) Weigh it so that it has the chemical composition shown in the table below, and heat and melt it in air at a temperature of about 1400°C to create glass.
次に前記ガラスにメタノールを加えてボールミル１こよ
り湿式粉砕し、乾燥して後、２Ｏ０メツシユ・バスさせ
整粒する。最後に前記ガラス粉末にイソブチルメタクリ
レート及びσ−テルピネオールを添加するとともに捕端
機で１時間混練し、これによってグレーズ用ペースト試
料を得た。Next, methanol is added to the glass, wet-pulverized in one ball mill, dried, and then subjected to a 200 mesh bath to size the glass. Finally, isobutyl methacrylate and σ-terpineol were added to the glass powder and kneaded for 1 hour using an end trapper to obtain a glaze paste sample.
尚、試料番号２６は本発明品と比較するための比較試料
であり、Ｓｉ、Ｏ！ｌ ４Ｑ ｗｔ％、 Ａｌｆｌ○３
ｆ３ ｗｔ％、ｃａｏ Ｂ ｗｔ％、 Ｂ９０３５
ｗｔ％、 ＰｂＯ２５ｗｔ％、 ＢａＯ３ｗｔ％、 Ｂ
ｉｚＯａ ５ ｗｔ％から成る従来一般に使用されてい
るグレーズ用ペーストである。Incidentally, sample number 26 is a comparative sample for comparison with the product of the present invention, and contains Si, O! l 4Q wt%, Alfl○3
f3 wt%, cao B wt%, B9035
wt%, PbO25wt%, BaO3wt%, B
This is a conventionally commonly used glaze paste consisting of 5 wt% izOa.
かくして得られたグレーズ用ペーストを使用してアルミ
ナから成る１００ｒＣ１１角の基板上に長さ５ｆｆ。Using the thus obtained glaze paste, a length of 5 ff was placed on a 100rC11 square substrate made of alumina.
＠５ｆｌ、厚み１００ Ｂｎｔのパターンｉｏｏ個を印
刷し、次１ζこれを還元雰囲気（窒素−水素雰囲気）中
、約１２Ｏ０℃の温度で焼成し、セラミック基板表面に
グレーズ層を熔着させた。そして次に前記グレーズ層を
熔着させたセラミック基板を水中及びアルカリ液中に浸
漬し、しかる后グレーズ層表面を顕微鏡により観察し、
グレーズ層の表面状態を調べるととも蚤こ黒色化してい
るものの数を調べ、その変色率を算出した。また同時に
表面粗さ計でグレーズ層表面の表面粗さを測定し、その
平均値を算出した。Ioo patterns of @5 fl and a thickness of 100 Bnt were printed, and then fired at a temperature of about 120° C. in a reducing atmosphere (nitrogen-hydrogen atmosphere) to weld a glaze layer to the surface of the ceramic substrate. Then, the ceramic substrate to which the glaze layer is welded is immersed in water and an alkaline solution, and then the surface of the glaze layer is observed with a microscope,
The surface condition of the glaze layer was examined, and the number of fleas that were blackened was also determined, and the rate of discoloration was calculated. At the same time, the surface roughness of the glaze layer surface was measured using a surface roughness meter, and the average value was calculated.
その結果を表−工に示す。The results are shown on the table.
次にグレーズ層の電気絶縁抵抗を抵抗測定機で測定し、
その平均値を算出して電気絶縁抵抗の劣化を調べた。尚
、グレーズ層の電気絶縁抵抗の劣化はグレーズ用ペース
ト中のガラス粉末が有する電気絶縁抵抗値と比較した。Next, measure the electrical insulation resistance of the glaze layer with a resistance measuring machine.
The average value was calculated to examine the deterioration of electrical insulation resistance. Note that the deterioration of the electrical insulation resistance of the glaze layer was compared with the electrical insulation resistance value of the glass powder in the glaze paste.
上記の結果を表−■に示す。The above results are shown in Table-■.
表−■ 拳印を付したものは本発明の範囲外のものである。Table - ■ Items with a fist stamp are outside the scope of the present invention.
（発明の効果）
上記実験結果からも判るように、従来のグレーズ用ガラ
ス組成物を使用したグレーズ層は全数が黒色化し、かつ
電気絶縁抵抗値も６．２ Ｘ １０ Ｑａｌから８．
４Ｘ１０ＱｃＩＮ と大きく劣化してしまうのに対し
、本発明のグレーズ用ガラス組成物を使用したグレーズ
層は黒色化が１２％以下であり、また電気絶縁抵抗の劣
化もほとんどない。(Effects of the Invention) As can be seen from the above experimental results, all of the glaze layers using the conventional glass composition for glaze turned black, and the electrical insulation resistance value ranged from 6.2 x 10 Qal to 8.
In contrast, the glaze layer using the glass composition for glaze of the present invention has blackening of 12% or less, and there is almost no deterioration in electrical insulation resistance.
したがって、本発明のグレーズ用ガラス組成物はメタラ
イズ金属部を有するセラミック基板表面に溶着されるグ
レーズ層の材料として極めて有用である。Therefore, the glass composition for glazing of the present invention is extremely useful as a material for a glaze layer welded to the surface of a ceramic substrate having a metallized metal portion.
Claims (1)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19913484A JPS6177636A (en) | 1984-09-21 | 1984-09-21 | Glass composition for glaze |
| US06/775,859 US4632846A (en) | 1984-09-17 | 1985-09-13 | Process for preparation of glazed ceramic substrate and glazing composition used therefor |
| US06/926,854 US4767672A (en) | 1984-09-17 | 1986-11-03 | Process for preparation of glazed ceramic substrate and glazing composition used therefor |
| US07/114,227 US4806334A (en) | 1984-09-17 | 1987-10-26 | Glazed ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19913484A JPS6177636A (en) | 1984-09-21 | 1984-09-21 | Glass composition for glaze |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177636A true JPS6177636A (en) | 1986-04-21 |
| JPH0444620B2 JPH0444620B2 (en) | 1992-07-22 |
Family
ID=16402708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19913484A Granted JPS6177636A (en) | 1984-09-17 | 1984-09-21 | Glass composition for glaze |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177636A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018190057A1 (en) * | 2017-04-14 | 2018-10-18 | パナソニックＩｐマネジメント株式会社 | Chip resistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5043117A (en) * | 1973-08-21 | 1975-04-18 |
-
1984
- 1984-09-21 JP JP19913484A patent/JPS6177636A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5043117A (en) * | 1973-08-21 | 1975-04-18 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018190057A1 (en) * | 2017-04-14 | 2018-10-18 | パナソニックＩｐマネジメント株式会社 | Chip resistor |
| JPWO2018190057A1 (en) * | 2017-04-14 | 2020-02-27 | パナソニックＩｐマネジメント株式会社 | Chip resistor |
| US10763018B2 (en) | 2017-04-14 | 2020-09-01 | Panasonic Intellectual Property Management Co., Ltd. | Chip resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0444620B2 (en) | 1992-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |