JPS6177330A - Formation of insulation film of semiconductor element - Google Patents

Formation of insulation film of semiconductor element

Info

Publication number
JPS6177330A
JPS6177330A JP59198640A JP19864084A JPS6177330A JP S6177330 A JPS6177330 A JP S6177330A JP 59198640 A JP59198640 A JP 59198640A JP 19864084 A JP19864084 A JP 19864084A JP S6177330 A JPS6177330 A JP S6177330A
Authority
JP
Japan
Prior art keywords
film
substrate
formation
thickness
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59198640A
Other languages
Japanese (ja)
Inventor
Fumio Ichikawa
市川　文雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59198640A priority Critical patent/JPS6177330A/en
Publication of JPS6177330A publication Critical patent/JPS6177330A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To enable the formation of thin insulation films with good thickness- controllability by a method wherein a thin Si nitride film is formed on an Si substrate directly by nitriding before formation of an Si oxide film. CONSTITUTION:An Si3N4 film 2 of 10-30Angstrom thickness is formed on the Si substrate 1. This Si3N4 film 2 is directly formed by nitriding on heat treatment for 10-60min in an NH3 or N2+H2 atmosphere at a temperature of 1,000-1,200 deg.C. After formation of this thin Si3N4 film 2 of 10-30rho thickness, heat treatment (oxidation) for a described time at a temperature of 800-1,100 deg.C in an oxidizing atmosphere enables the oxidation of the surface of the Si substrate 1 with oxygen which diffuses through the film 2 and the gradual oxidation of the film 2, resulting in the formation of an SiO2 film 3 of 50-100Angstrom thickness on the surface of the substrate 1. The film 2 is slower than SiO2 in impurity diffusion and inhibits supplies of oxygen to the surface of the substrate 1; therefore, in this case, the speed of oxidation of the substrate 1 surface largely reduced.

Description

【発明の詳細な説明】 （産業上の利用分野） この発明は半導体素子絶縁膜、例えばＭＯＳ）ランジス
タにおけるゲート絶縁膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a gate insulating film in a semiconductor element insulating film, such as a MOS transistor.

（従来の技術） ＬＳＩの高集積化に伴い、ＭＯＳ）ランジスタのゲート
絶縁膜も薄いものが要求されている。現在、ＭＯＳ）ラ
ンジスタのゲート絶縁膜としては、５ｉ０２膜が使用さ
れている。Ｓｉｎ、膜は、一般には、シリコン基板表面
を直接酸化して形成される。(Prior Art) As LSIs become more highly integrated, gate insulating films of MOS transistors are also required to be thinner. Currently, a 5i02 film is used as a gate insulating film of a MOS transistor. A Sin film is generally formed by directly oxidizing the surface of a silicon substrate.

（発明が解決しようとする問題点） しかるに、シリコン基板表面を直接酸化してＳｉ０ｇ膜
を形成する方法では、形成速度が速いため、現在要求さ
れている膜厚２００Å以下では、膜厚の制御が困難であ
る。(Problems to be Solved by the Invention) However, the method of directly oxidizing the surface of a silicon substrate to form a Si0g film has a fast formation rate, so it is difficult to control the film thickness below the currently required film thickness of 200 Å. Have difficulty.

（問題点を解決するための手段） そこで、この発明では、シリコン基板上にシリコン酸化
膜（Ｓｉｎ、膜）を形成する前に、薄いシリコン基板上
（Ｓｉ、Ｎ、膜）を直接窒化法によりシリコン基板衣、
面に形成し、その後酸化処理する。(Means for solving the problem) Therefore, in this invention, before forming a silicon oxide film (Si, film) on a silicon substrate, a thin silicon substrate (Si, N, film) is directly nitrided. silicon substrate coating,
It is formed on the surface and then oxidized.

（作用） このようにすると、酸化処理工程において、薄いシリコ
ン窒化膜が、酸素の供給に対してバリアーとして働くの
で、シリコン基板表面の酸化速度が大幅に遅くなる。(Function) In this way, in the oxidation treatment process, the thin silicon nitride film acts as a barrier against the supply of oxygen, so that the oxidation rate of the silicon substrate surface is significantly slowed down.

（実施例） 第１図は、この発明の一実施例を示す図である。(Example) FIG. 1 is a diagram showing an embodiment of the present invention.

まず、第１図（ａ）に示すように、シリコン基板１上に
、１０〜３０＾の膜厚を有する５ｔ３Ｎ４膜２を形成す
る。この１０〜３０Ａ厚の５ｉ６Ｎ４膜２は、１ｏｏｏ
〜１２００℃の温度で、ＮＨ３またはＮ２＋几雰囲気中
で１０分〜６０分熱処理を行うことにより、直接窒化法
で形成される。この時、反応温度は、プラズマを利用す
ることにより、約６００℃程に下げることも可能である
。First, as shown in FIG. 1(a), a 5t3N4 film 2 having a thickness of 10 to 30^ is formed on a silicon substrate 1. This 5i6N4 film 2 with a thickness of 10 to 30A is 1ooo
It is formed by a direct nitriding method by performing heat treatment for 10 minutes to 60 minutes at a temperature of ~1200° C. in an NH3 or N2+ atmosphere. At this time, the reaction temperature can be lowered to about 600° C. by using plasma.

この１０〜３０λ厚の薄いＳｉ、Ｎ、膜２を形成した後
、酸化雰囲気中で、８００〜１１００℃の温度で所定の
時間熱処理（酸化処理）する。すると、薄いＳｉ３Ｎ４
膜２を拡散した酸素によりシリコン基板１の狭面が酸化
され、かつＳｔ、Ｎ４膜２も次第に酸化されて最終的に
第１図（ｂ）に示すようにシリコン基板１の表面に５０
〜１００人厚のＳｉｎｇ膜３が形成されるが、Ｓｔ、Ｎ
、膜２はＳｔＯ，と比較して不純物の拡散が遅く、シリ
コン基板１表面に対する酸素の供給を抑制するため、こ
の場合は、シリコン基板１表面の酸化速度が大幅に減速
される。After forming this thin Si, N film 2 with a thickness of 10 to 30λ, heat treatment (oxidation treatment) is performed at a temperature of 800 to 1100° C. for a predetermined time in an oxidizing atmosphere. Then, thin Si3N4
The narrow surface of the silicon substrate 1 is oxidized by the oxygen diffused through the film 2, and the St, N4 film 2 is also gradually oxidized, and finally, as shown in FIG.
A Sing film 3 with a thickness of ~100 is formed, but St, N
The film 2 diffuses impurities more slowly than StO, and suppresses the supply of oxygen to the surface of the silicon substrate 1, so in this case, the oxidation rate of the surface of the silicon substrate 1 is significantly slowed down.

そして、仁のように薄い５１３Ｎ４膜２によりシリコン
基板１表面の酸化速度が大幅に減速されることにより、
直接シリコン基板を酸化した場合に比べて、ＳｉＯ，膜
３の膜厚の制御性が良くなる。Then, the oxidation rate of the surface of the silicon substrate 1 is significantly slowed down by the 513N4 film 2, which is as thin as a grain.
Compared to the case where the silicon substrate is directly oxidized, the controllability of the thickness of the SiO film 3 is improved.

（発明の効果） 以上詳述したように、この発明の方法によれば、シリコ
ン基板上に、シリコン酸化膜を形成する前に、薄いシリ
コン窒化膜を直接窒化法により形成し、その後酸化処理
することにより、薄い絶縁膜を膜厚制御良く形成するこ
とができる。(Effects of the Invention) As detailed above, according to the method of the present invention, before forming a silicon oxide film on a silicon substrate, a thin silicon nitride film is directly formed on a silicon substrate by a nitriding method, and then an oxidation treatment is performed. As a result, a thin insulating film can be formed with good thickness control.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の半導体素子絶縁膜の形成方法の一実
施例を示す断面図である。 １・・・シリコン基板、２・・・Ｓｉ、Ｎ、膜、３・・
・５１０２膜。 第１FIG. 1 is a sectional view showing an embodiment of the method for forming a semiconductor element insulating film of the present invention. 1... Silicon substrate, 2... Si, N, film, 3...
・5102 membrane. 1st

Claims (1)

【特許請求の範囲】[Claims] 　シリコン基板上に薄くシリコン窒化膜を直接窒化法で
形成する工程と、その上で酸化処理を行うことにより、
前記シリコン基板上にシリコン酸化膜を形成する工程と
を具備してなる半導体素子絶縁膜の形成方法。By forming a thin silicon nitride film directly on a silicon substrate using the nitriding method and then performing oxidation treatment,
A method for forming a semiconductor device insulating film, comprising the step of forming a silicon oxide film on the silicon substrate.
JP59198640A 1984-09-25 1984-09-25 Formation of insulation film of semiconductor element Pending JPS6177330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59198640A JPS6177330A (en) 1984-09-25 1984-09-25 Formation of insulation film of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59198640A JPS6177330A (en) 1984-09-25 1984-09-25 Formation of insulation film of semiconductor element

Publications (1)

Publication Number Publication Date
JPS6177330A true JPS6177330A (en) 1986-04-19

Family

ID=16394569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59198640A Pending JPS6177330A (en) 1984-09-25 1984-09-25 Formation of insulation film of semiconductor element

Country Status (1)

Country Link
JP (1) JPS6177330A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113113284A (en) * 2020-01-09 2021-07-13 株式会社国际电气 Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113113284A (en) * 2020-01-09 2021-07-13 株式会社国际电气 Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP2021111679A (en) * 2020-01-09 2021-08-02 株式会社Kokusai Electric Semiconductor device manufacturing method, substrate processing device, and program
US11728162B2 (en) 2020-01-09 2023-08-15 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
CN113113284B (en) * 2020-01-09 2024-03-29 株式会社国际电气 Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium

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