JPS6176262A - Polishing device - Google Patents

Polishing device

Info

Publication number
JPS6176262A
JPS6176262A JP19472384A JP19472384A JPS6176262A JP S6176262 A JPS6176262 A JP S6176262A JP 19472384 A JP19472384 A JP 19472384A JP 19472384 A JP19472384 A JP 19472384A JP S6176262 A JPS6176262 A JP S6176262A
Authority
JP
Japan
Prior art keywords
wafer
polishing
surface plate
polished
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19472384A
Other languages
Japanese (ja)
Inventor
Norio Tabata
田畑 命生
Toshio Murayama
村山 利雄
Kunihiko Murakami
邦彦 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi High Tech Corp
Original Assignee
Hitachi Ltd
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Ltd
Priority to JP19472384A priority Critical patent/JPS6176262A/en
Publication of JPS6176262A publication Critical patent/JPS6176262A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make a large caliber work polishable with a small-sized device so efficiently and highly accurately, by automatically polishing the work of a semiconductor wafer or the like to be conveyed as being held individually by means of a conveying device with a polishing device piece by piece. CONSTITUTION:A wafer 1 held by a carrier 3 is conveyed in a right direction with endless rotational movement of this carrier 3. And, it is fed to a rough polishing part 9, and in a state that an upper surface plate 15 and a lower surface plate 13 are made contact with both sides, top and bottom of the wafer, the lower surface plate 13 is rotated and moved by a motor 14 whereby both upper and lower sides are subjected to rough polishing. Afterward, the wafer 1 is fed to a washing part 10 and the rough polished surface is washed clean by flushing water to be spouted out of washing nozzles 10a and 10b, while the wafer 1 after being washed is conveyed to a finish polishing part 11, and both upper and lower surfaces are polished for finishing by the upper surface plate 15 and the lower surface plate 13. Next, the water 1, after its finish polishing is over, is recovered from the carrier 3 onto an unloader 4 by an arm 12. Thus, a large caliber work or the wafer 1 is polishable piece by piece with a small-sized device.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は研磨技術、特に、半魂体ウェハの研磨加工に通
用して効果のある技術に関するものであ〔背景技術〕 半導体ウェハに対して鏡面ボリフシェ加工を施す場合、
複数枚のウェハを研磨プレート上に載置し、パンチ式に
研磨する方式が考えられる。
[Detailed Description of the Invention] [Technical Field] The present invention relates to a polishing technique, and in particular, to a technique that is applicable and effective for polishing semi-intrusive wafers. [Background Technique] Mirror polishing processing is performed on semiconductor wafers. When applying
A possible method is to place a plurality of wafers on a polishing plate and polish them using a punch method.

ところが、このようなバンチ式の研磨方法では、ウェハ
の大口径化に伴って装置が著しく大型化し、またスルー
ブツトが低く、スペース効率が良くないという問題が考
えられる。しかも、同時に複数枚のウェハを研磨するた
め、加工精度が必ずしも良くない場合も考えられる。
However, with such a bunch-type polishing method, there are problems in that as the diameter of the wafer increases, the device becomes significantly larger, and the throughput is low, resulting in poor space efficiency. Furthermore, since a plurality of wafers are polished at the same time, processing accuracy may not always be good.

なお、ウェハの研摩いついては、工業調査会、1983
年11月15日発行の「趨LSI製造・試験装置ガイド
ブック」電子材料1983年11月号別冊、P49〜P
56に詳しく説明されている。
Regarding wafer polishing, please refer to Kogyo Kenkyukai, 1983.
"Advanced LSI Manufacturing/Testing Equipment Guidebook" Electronic Materials November 1983 issue, published on November 15, 2013, P49-P
It is explained in detail in 56.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、小形の装置で大口径の被研磨物を効率
良く研磨できる技術を提供することにある。
An object of the present invention is to provide a technique that can efficiently polish a large-diameter object to be polished using a small-sized device.

本発明の他の目的は、高精度の研磨を行うことのできる
技術を提供することにある。
Another object of the present invention is to provide a technique that allows highly accurate polishing.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。
A brief overview of typical inventions disclosed in this application is as follows.

すなわち、搬送手段で個別に保持されて搬送されて来た
被研磨物を1枚ずつ研磨手段で自動研磨することにより
、大口径の被研磨物でも小形の装置で研磨でき、前記目
的を達成できるものである。
That is, by automatically polishing the objects to be polished one by one by the polishing means that are individually held and transported by the conveying means, even large-diameter objects to be polished can be polished with a small device, and the above objective can be achieved. It is something.

〔実施例〕〔Example〕

第1図は本発明の一実施例である研磨装置の斜視図、第
2図はその研磨部の拡大部分断面図である。
FIG. 1 is a perspective view of a polishing apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged partial sectional view of the polishing section thereof.

本実施例における研磨装置はシリコンの如き半導体ウェ
ハの鏡面ボリソンユ加工用のものである。
The polishing apparatus in this embodiment is for mirror polishing of semiconductor wafers such as silicon.

この研m装置において、被研磨物であるウェハlはロー
ダ2上から研磨装置のキャリア3で搬送されながらポリ
ッシング処理された後、アンローダ4上に回収される。
In this polishing apparatus, a wafer 1, which is an object to be polished, is transported from a loader 2 by a carrier 3 of the polishing apparatus and subjected to a polishing process, and then recovered onto an unloader 4.

そのため、ローダ2上のウェハlをキャリア3上に移載
するアーム5がキャリア3の始端側にウェハlを真空吸
着等で保持して所定角度だけ揺動可能に設けられている
Therefore, an arm 5 for transferring the wafer l on the loader 2 onto the carrier 3 is provided on the starting end side of the carrier 3 to hold the wafer l by vacuum suction or the like and to be able to swing by a predetermined angle.

キャリア3はエンドレスベルト型の構造よりなり、その
長さ方向に沿って所定間隔でウェハ保持孔6を有してい
る。ウェハ保持孔6はその中にウェハlを収容して保持
しながら搬送中に研磨加工を施すためのものである。ウ
ェハlがウェハ保持孔6から落下しないようにするため
、キャリア3の下側には無端ベルト型の案内ベルト7が
ローラ8の回りでキャリア3と同一方向に運動するよう
配設されている。
The carrier 3 has an endless belt type structure and has wafer holding holes 6 at predetermined intervals along its length. The wafer holding hole 6 is used to accommodate and hold the wafer l therein while polishing it during transportation. In order to prevent the wafer l from falling from the wafer holding hole 6, an endless belt type guide belt 7 is disposed below the carrier 3 so as to move around rollers 8 in the same direction as the carrier 3.

アーム5の下流側(第1図の右側)には、粗研磨部9が
配置され、この粗研磨部9では、ウェハ1が粗ポリッシ
ング加工される。
A rough polishing section 9 is arranged downstream of the arm 5 (on the right side in FIG. 1), and in this rough polishing section 9, the wafer 1 is subjected to rough polishing.

粗研磨部9の下流側には、ウェハ1を水洗等で洗浄する
洗浄ノズル10a、10bよりなる洗浄部ioが設けら
れている。
On the downstream side of the rough polishing section 9, a cleaning section io consisting of cleaning nozzles 10a and 10b for cleaning the wafer 1 with water or the like is provided.

さらに、この洗浄部10の下流側(右側)には、粗ポリ
ッシングされたウェハlを仕上げポリ7シング加工する
仕上げ研磨部11が設けられている。
Further, on the downstream side (right side) of the cleaning section 10, there is provided a final polishing section 11 that performs a final polishing process on the wafer l that has been roughly polished.

この仕上げ研摩部11で仕上げポリッシングされたウェ
ハlをキャリア3の下流端からアンローダ4の上に移載
するため、アーム12がウェハlを真空吸着等で保持し
て所定角度だけ揺動可能に設けられている。
In order to transfer the wafer l that has been finished polished in this finishing polishing section 11 from the downstream end of the carrier 3 onto the unloader 4, an arm 12 is provided to hold the wafer l by vacuum suction or the like and to be able to swing by a predetermined angle. It is being

前記粗研磨部9および仕上げ研磨部11は粗研−磨と仕
上げ研磨で目的は異なるが、いずれも第2図に略示する
ような研磨機構を有している。
The rough polishing section 9 and the final polishing section 11 have different purposes for rough polishing and final polishing, but both have a polishing mechanism as schematically shown in FIG. 2.

すなわち、この研磨機構は、ウェハlの両面研磨を行う
ものであり、ウェハ1の下側には該ウェハ1の下面をポ
リッシングするための下定盤工3がモータ14で強制回
転駆動されるよう設けられている。一方、ウェハ1の上
側には、土足1915が配設されている。この上定盤1
5はシリンダ16により上下動可能であるが、本実施例
では強制回転されず、下定盤13の回転にょるウェハl
の回転でアイドル回転される。もっとも、上定盤15も
強制回転駆動することができる。
That is, this polishing mechanism polishes both sides of the wafer 1, and a lower surface plate 3 for polishing the lower surface of the wafer 1 is provided under the wafer 1 so as to be forcibly rotated by a motor 14. It is being On the other hand, on the upper side of the wafer 1, a shoe foot 1915 is provided. This upper surface plate 1
5 can be moved up and down by the cylinder 16, but in this embodiment, it is not forced to rotate, and the wafer l is rotated by the rotation of the lower surface plate 13.
Idle rotation is performed at the rotation of . However, the upper surface plate 15 can also be forced to rotate.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

被研摩物であるウェハ1はローダ2上からアーム5で保
持され、キャリア3のウェハ保持孔6の中にセットされ
る。このようにしてキャリア3で保持されたウェハlは
該キャリア3のエンドレス回転移動につれて図の右方向
に搬送され、粗研磨部9に送られる。
A wafer 1, which is an object to be polished, is held by an arm 5 from above a loader 2 and set in a wafer holding hole 6 of a carrier 3. The wafer l held by the carrier 3 in this manner is transported to the right in the figure as the carrier 3 endlessly rotates and is sent to the rough polishing section 9.

粗研磨部9では、ウェハ1はその上下両面に上定盤15
と下定盤13とを接触させた状態でモータ14によって
下定盤13を回転駆動することにより、上下両面を粗ポ
リノンングされる。
In the rough polishing section 9, the wafer 1 has an upper surface plate 15 on both its upper and lower surfaces.
By rotationally driving the lower surface plate 13 by the motor 14 with the lower surface plate 13 in contact with the lower surface plate 13, the upper and lower surfaces are rough-polished.

その後、ウェハIは洗浄部10に送られ、洗浄ノズル1
0a、10bから噴出される洗浄水により粗研磨面を洗
浄される。
Thereafter, the wafer I is sent to the cleaning section 10, and the cleaning nozzle 1
The roughly polished surface is cleaned by the cleaning water jetted from 0a and 10b.

洗浄後のウェハ1は仕上げ研磨部11に搬送され、その
上下両面を上定盤15と下定盤13によって仕上げ研磨
される。
The cleaned wafer 1 is transported to a final polishing section 11, and its upper and lower surfaces are polished by an upper surface plate 15 and a lower surface plate 13.

仕上げ研磨を終了したウェハlはアーム12によりキャ
リア3からアンローダ4上に回収される。
The wafer l that has been finished being polished is recovered from the carrier 3 onto the unloader 4 by the arm 12.

このようにして、ウェハ1は1枚ずつ枚葉式に順次両面
研磨される。
In this way, the wafers 1 are sequentially polished on both sides in a single-wafer manner.

〔効果〕〔effect〕

(l)、被処理物を個別的に枚葉式に研磨することによ
り、大口径の被処理物でも小形の装置で効率的に研摩で
きる。
(l) By individually polishing the workpieces in a single-wafer manner, even large-diameter workpieces can be efficiently polished using a small device.

(2)、前記il+により、高精度の研磨を行うことが
できる。
(2) High-precision polishing can be performed using the il+.

(3)、前記(1)により、自動研磨を実現することが
できる。
(3) According to (1) above, automatic polishing can be realized.

(4)、前記(1)により、スペース効率を向上させる
ことができる。
(4) According to (1) above, space efficiency can be improved.

(5)、前記illにより、被処理物のサイズの変化に
容易に対応できる。
(5) The above-mentioned ill allows for easy adaptation to changes in the size of the object to be processed.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではな(、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples (although it is possible to make various changes without departing from the gist of the invention). Not even.

たとえば、定磐は上下いずれを回転駆動しても、あるい
は両方を回転駆動してもよく、その場合、両定盤の回転
速度を互いに相違させることにより表裏両面の区別が容
易につけられるという利点がある。
For example, a fixed stone may be driven to rotate either the top or bottom, or both sides.In that case, the advantage is that by making the rotational speeds of both surface plates different from each other, it is easy to distinguish between the front and back surfaces. be.

〔利用分野〕[Application field]

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるウェハの研磨に通用
した場合について説明したが、それに限定されるもので
はなく、たとえば、それ以外の被研磨物の研磨に広く適
用できる。
In the above explanation, the invention made by the present inventor was mainly applied to the polishing of wafers, which is the background field of application, but the present invention is not limited thereto. Can be widely applied to polishing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例である研磨装置の斜視図、 第2図はその研磨部の拡大部分断面図である。 l・・・ウェハ(被研磨物)、2・・・ローダ、3・・
・キャリア(搬送手段)、4・・・アンローダ、5・・
・アーム、6・・・ウェハ保持孔、7・・・案内ベルト
、8・・・ローラ、9・・・粗研磨部、IO・・・洗浄
部、toa、tob・・・洗浄ノズル、11・・・仕上
げ研磨部、12・・・アーム、13・・・下定盤(研磨
手段)、14・・・モータ(駆動手段)、15・・・上
定盤(研磨手段)、16・・・シリンダ。
FIG. 1 is a perspective view of a polishing apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged partial sectional view of the polishing section thereof. l...Wafer (object to be polished), 2...Loader, 3...
・Carrier (transportation means), 4... Unloader, 5...
・Arm, 6... Wafer holding hole, 7... Guide belt, 8... Roller, 9... Rough polishing section, IO... Cleaning section, toa, tob... Cleaning nozzle, 11. ...Final polishing section, 12...Arm, 13...Lower surface plate (polishing means), 14...Motor (drive means), 15...Upper surface plate (polishing means), 16...Cylinder .

Claims (1)

【特許請求の範囲】 1、被研磨を保持して搬送する搬送手段と、この搬送手
段で個別に保持されて搬送されて来た被研磨物の両面と
接触可能でかつ少なくとも一方が回転駆動される研磨手
段と、前記研磨手段の少なくとも一方を回転駆動する駆
動手段とを備えてなる研磨装置。 2、搬送手段が、被研磨物の保持孔を持つ無端コンベヤ
であることを特徴とする特許請求の範囲第1項記載の研
磨装置。 3、被研磨物がウェハであり、各ウェハが1枚ずつ枚葉
研磨されることを特徴とする特許請求の範囲第1項また
は第2項記載の研磨装置。
[Scope of Claims] 1. A conveying means for holding and conveying the object to be polished, and a means for contacting both surfaces of the object to be polished, which are individually held and conveyed by the conveying means, and at least one of which is rotationally driven. A polishing apparatus comprising: a polishing means; and a driving means for rotationally driving at least one of the polishing means. 2. The polishing apparatus according to claim 1, wherein the conveying means is an endless conveyor having holes for holding the object to be polished. 3. The polishing apparatus according to claim 1 or 2, wherein the object to be polished is a wafer, and each wafer is polished one by one.
JP19472384A 1984-09-19 1984-09-19 Polishing device Pending JPS6176262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19472384A JPS6176262A (en) 1984-09-19 1984-09-19 Polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19472384A JPS6176262A (en) 1984-09-19 1984-09-19 Polishing device

Publications (1)

Publication Number Publication Date
JPS6176262A true JPS6176262A (en) 1986-04-18

Family

ID=16329170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19472384A Pending JPS6176262A (en) 1984-09-19 1984-09-19 Polishing device

Country Status (1)

Country Link
JP (1) JPS6176262A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207559A (en) * 1987-02-19 1988-08-26 Disco Abrasive Syst Ltd Automatic wafer grinding device
EP0755751A1 (en) * 1995-07-28 1997-01-29 Shin-Etsu Handotai Co., Ltd. Method of manufacturing semiconductor wafers and process of and apparatus for grinding used for the same method of manufacture
JP2007163005A (en) * 2005-12-13 2007-06-28 Sanden Corp Refrigeration cycle
KR100776014B1 (en) 2006-06-29 2007-11-15 주식회사 싸이노스엔지니어링 In-line lapping and polishing system
CN105773333A (en) * 2014-12-24 2016-07-20 佛山市宝航机械装备行业知识产权服务有限公司 High-efficiency and low-cost polishing and grinding equipment for green bricks

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207559A (en) * 1987-02-19 1988-08-26 Disco Abrasive Syst Ltd Automatic wafer grinding device
EP0755751A1 (en) * 1995-07-28 1997-01-29 Shin-Etsu Handotai Co., Ltd. Method of manufacturing semiconductor wafers and process of and apparatus for grinding used for the same method of manufacture
JP2007163005A (en) * 2005-12-13 2007-06-28 Sanden Corp Refrigeration cycle
KR100776014B1 (en) 2006-06-29 2007-11-15 주식회사 싸이노스엔지니어링 In-line lapping and polishing system
CN105773333A (en) * 2014-12-24 2016-07-20 佛山市宝航机械装备行业知识产权服务有限公司 High-efficiency and low-cost polishing and grinding equipment for green bricks

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