JPS6173670U - - Google Patents
Info
- Publication number
- JPS6173670U JPS6173670U JP15547184U JP15547184U JPS6173670U JP S6173670 U JPS6173670 U JP S6173670U JP 15547184 U JP15547184 U JP 15547184U JP 15547184 U JP15547184 U JP 15547184U JP S6173670 U JPS6173670 U JP S6173670U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- tubular body
- reaction
- semiconductor substrate
- rolling elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012495 reaction gas Substances 0.000 claims 2
- 238000005096 rolling process Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は、本考案によるLPCVD装置の一実施例
の反応部の長手方向断面図、第２図、第３図、第
４図は従来のLPCVD装置反応部の長手方向断面図
である。
図中１はウエーハ支持台、２はウエーハ、３は
反応管、４は反応管の入口側蓋体、５は反応管の
出口側蓋体、６はガス供給孔、７は加熱炉、８は
排気孔、９は排気ポンプ、１０は内管、１０ａは
ガス流入口、１１はキヤツプ、１４は内管、１４
ａは上部管体、１４ｂは下部管体、１４ｃはガス
流入口を示す。
FIG. 1 is a longitudinal sectional view of the reaction section of an embodiment of the LPCVD apparatus according to the present invention, and FIGS. 2, 3, and 4 are longitudinal sectional views of the reaction section of a conventional LPCVD apparatus. In the figure, 1 is a wafer support stand, 2 is a wafer, 3 is a reaction tube, 4 is a cover on the inlet side of the reaction tube, 5 is a cover on the outlet side of the reaction tube, 6 is a gas supply hole, 7 is a heating furnace, and 8 is a Exhaust hole, 9 is an exhaust pump, 10 is an inner pipe, 10a is a gas inlet, 11 is a cap, 14 is an inner pipe, 14
14a represents an upper pipe body, 14b represents a lower pipe body, and 14c represents a gas inlet.
Claims (1)
この第１の反応管を収納し、かつ内部に反応ガス
が導入される構造を有する第２の反応管とからな
り、第１の反応管を上下に半割した管体で構成し
、その上下管体の周面に多数の反応ガス流入口を
開口し、かつ下部管体の内周に半導体基板を立掛
けて支持する支持部を形成するとともに、該下部
管体に転動体を取付け、該転動体により第１の反
応管を第２の反応管内な抜差し自在に支持したこ
とを特徴とする気相成長装置。 a first reaction tube housing a semiconductor substrate therein;
It consists of a second reaction tube that houses this first reaction tube and has a structure into which a reaction gas is introduced. A large number of reaction gas inlets are opened on the circumferential surface of the tubular body, and a supporting portion for leaning and supporting the semiconductor substrate is formed on the inner periphery of the lower tubular body, and rolling elements are attached to the lower tubular body. A vapor phase growth apparatus characterized in that a first reaction tube is supported by rolling elements so that it can be freely inserted into and removed from a second reaction tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15547184U JPH0220213Y2 (en) | 1984-10-15 | 1984-10-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15547184U JPH0220213Y2 (en) | 1984-10-15 | 1984-10-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6173670U true JPS6173670U (en) | 1986-05-19 |
| JPH0220213Y2 JPH0220213Y2 (en) | 1990-06-01 |
Family
ID=30713482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15547184U Expired JPH0220213Y2 (en) | 1984-10-15 | 1984-10-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0220213Y2 (en) |
-
1984
- 1984-10-15 JP JP15547184U patent/JPH0220213Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0220213Y2 (en) | 1990-06-01 |