JPS6170747A - 注入形論理半導体装置 - Google Patents

注入形論理半導体装置

Info

Publication number
JPS6170747A
JPS6170747A JP59192893A JP19289384A JPS6170747A JP S6170747 A JPS6170747 A JP S6170747A JP 59192893 A JP59192893 A JP 59192893A JP 19289384 A JP19289384 A JP 19289384A JP S6170747 A JPS6170747 A JP S6170747A
Authority
JP
Japan
Prior art keywords
type
region
type buried
shallow
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59192893A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442828B2 (enrdf_load_stackoverflow
Inventor
Norihide Kinugasa
教英 衣笠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP59192893A priority Critical patent/JPS6170747A/ja
Publication of JPS6170747A publication Critical patent/JPS6170747A/ja
Publication of JPH0442828B2 publication Critical patent/JPH0442828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP59192893A 1984-09-14 1984-09-14 注入形論理半導体装置 Granted JPS6170747A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59192893A JPS6170747A (ja) 1984-09-14 1984-09-14 注入形論理半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59192893A JPS6170747A (ja) 1984-09-14 1984-09-14 注入形論理半導体装置

Publications (2)

Publication Number Publication Date
JPS6170747A true JPS6170747A (ja) 1986-04-11
JPH0442828B2 JPH0442828B2 (enrdf_load_stackoverflow) 1992-07-14

Family

ID=16298726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59192893A Granted JPS6170747A (ja) 1984-09-14 1984-09-14 注入形論理半導体装置

Country Status (1)

Country Link
JP (1) JPS6170747A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9260317B2 (en) 2012-07-10 2016-02-16 Nippon Sheet Glass Company, Limited Method for producing granular material containing metal oxide

Also Published As

Publication number Publication date
JPH0442828B2 (enrdf_load_stackoverflow) 1992-07-14

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