JPS617053U - Semiconductor laser stem - Google Patents

Semiconductor laser stem

Info

Publication number
JPS617053U
JPS617053U JP9185984U JP9185984U JPS617053U JP S617053 U JPS617053 U JP S617053U JP 9185984 U JP9185984 U JP 9185984U JP 9185984 U JP9185984 U JP 9185984U JP S617053 U JPS617053 U JP S617053U
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser stem
stem
recorded
guid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9185984U
Other languages
Japanese (ja)
Inventor
尚孝 大塚
洋三 福川
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to JP9185984U priority Critical patent/JPS617053U/en
Publication of JPS617053U publication Critical patent/JPS617053U/en
Pending legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案によるレーザ・ステムを示す図であり、
１は正面因、２は側面図である。 第２図は従来の“レーザ・ステムを示す図であり、１は
正面図、２は側面図である。 符号の説明、１：レーザΦステム、２：レーザ・ステム
、３：チップ・グイボンド位置を示す印、Ａ，Ｂ：ステ
ム中心（チップ・タイボンド位置）。FIG. 1 is a diagram showing a laser stem according to the present invention,
1 is a front view, and 2 is a side view. Figure 2 shows a conventional laser stem, with 1 being a front view and 2 being a side view. Explanation of symbols, 1: Laser Φ stem, 2: Laser stem, 3: Chip Guibond position Marks indicating A, B: Stem center (chip tie bond position).

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザ・ステムにおいて、ヂンプ・グイボンド位
置を示す印を設けたことを特徴とする半導体レーザ●ス
テム。A semiconductor laser stem characterized in that the semiconductor laser stem is provided with a mark indicating the dip/guid bond position.
JP9185984U 1984-06-18 1984-06-18 Semiconductor laser stem Pending JPS617053U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9185984U JPS617053U (en) 1984-06-18 1984-06-18 Semiconductor laser stem

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9185984U JPS617053U (en) 1984-06-18 1984-06-18 Semiconductor laser stem

Publications (1)

Publication Number Publication Date
JPS617053U true JPS617053U (en) 1986-01-16

Family

ID=30648122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9185984U Pending JPS617053U (en) 1984-06-18 1984-06-18 Semiconductor laser stem

Country Status (1)

Country Link
JP (1) JPS617053U (en)

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