JPS617050U - MIS type light emitting diode - Google Patents

MIS type light emitting diode

Info

Publication number
JPS617050U
JPS617050U JP9100384U JP9100384U JPS617050U JP S617050 U JPS617050 U JP S617050U JP 9100384 U JP9100384 U JP 9100384U JP 9100384 U JP9100384 U JP 9100384U JP S617050 U JPS617050 U JP S617050U
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
type light
semiconductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9100384U
Other languages
Japanese (ja)
Inventor
一夫 田渕
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP9100384U priority Critical patent/JPS617050U/en
Publication of JPS617050U publication Critical patent/JPS617050U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第３図は本考案の一実施例を示す断面図、第
４図Ａ−Ｄは本考案の第３の実施例の製造方法を示す工
程別断面図、第５図は従来例を示す断面図である。 １・・・基板、２・・・第１の半導体層、３・・・高抵
抗層、４・・・第２の半導体層、５・・・絶縁層、６・
・・金属層。1 to 3 are cross-sectional views showing one embodiment of the present invention, FIGS. 4A to 4D are cross-sectional views showing each step of the manufacturing method of the third embodiment of the present invention, and FIG. 5 is a conventional example. FIG. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First semiconductor layer, 3... High resistance layer, 4... Second semiconductor layer, 5... Insulating layer, 6...
...Metal layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板、該基板上に積層された第１の半導体層、該
第１の半導体層上に積層されると共に開口を有する高抵
抗層、該高抵抗層及び上記開口より露出した第１の半導
体層上に積層された第２の半導体層、該第２の半導体層
上に積層された絶縁層、該絶縁層上に積層された金属層
、上記第１の、半導体層と電気的に接続された電極を有
することを特徴とするＭＩ．Ｓ型発光ダイオード。A semiconductor substrate, a first semiconductor layer stacked on the substrate, a high resistance layer stacked on the first semiconductor layer and having an opening, a first semiconductor layer exposed from the high resistance layer and the opening. a second semiconductor layer laminated thereon; an insulating layer laminated on the second semiconductor layer; a metal layer laminated on the insulating layer; electrically connected to the first semiconductor layer; An MI characterized by having an electrode. S type light emitting diode.
JP9100384U 1984-06-18 1984-06-18 MIS type light emitting diode Pending JPS617050U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9100384U JPS617050U (en) 1984-06-18 1984-06-18 MIS type light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9100384U JPS617050U (en) 1984-06-18 1984-06-18 MIS type light emitting diode

Publications (1)

Publication Number Publication Date
JPS617050U true JPS617050U (en) 1986-01-16

Family

ID=30646506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9100384U Pending JPS617050U (en) 1984-06-18 1984-06-18 MIS type light emitting diode

Country Status (1)

Country Link
JP (1) JPS617050U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232570A (en) * 1988-07-21 1990-02-02 Sharp Corp Compound semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232570A (en) * 1988-07-21 1990-02-02 Sharp Corp Compound semiconductor light emitting device

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