JPS6169282U - - Google Patents

Info

Publication number
JPS6169282U
JPS6169282U JP15113784U JP15113784U JPS6169282U JP S6169282 U JPS6169282 U JP S6169282U JP 15113784 U JP15113784 U JP 15113784U JP 15113784 U JP15113784 U JP 15113784U JP S6169282 U JPS6169282 U JP S6169282U
Authority
JP
Japan
Prior art keywords
reaction tube
generated gas
quartz nozzle
nitride film
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15113784U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15113784U priority Critical patent/JPS6169282U/ja
Publication of JPS6169282U publication Critical patent/JPS6169282U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP15113784U 1984-10-08 1984-10-08 Pending JPS6169282U (US06373033-20020416-M00071.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15113784U JPS6169282U (US06373033-20020416-M00071.png) 1984-10-08 1984-10-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15113784U JPS6169282U (US06373033-20020416-M00071.png) 1984-10-08 1984-10-08

Publications (1)

Publication Number Publication Date
JPS6169282U true JPS6169282U (US06373033-20020416-M00071.png) 1986-05-12

Family

ID=30709263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15113784U Pending JPS6169282U (US06373033-20020416-M00071.png) 1984-10-08 1984-10-08

Country Status (1)

Country Link
JP (1) JPS6169282U (US06373033-20020416-M00071.png)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559427A (en) * 1978-07-07 1980-01-23 Hitachi Ltd Manufacturing device of silicon nitride film
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559427A (en) * 1978-07-07 1980-01-23 Hitachi Ltd Manufacturing device of silicon nitride film
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd

Similar Documents

Publication Publication Date Title
JPS6169282U (US06373033-20020416-M00071.png)
JPH0465146B2 (US06373033-20020416-M00071.png)
JPS62126362U (US06373033-20020416-M00071.png)
JPH039329Y2 (US06373033-20020416-M00071.png)
JPH0173930U (US06373033-20020416-M00071.png)
JPH01123336U (US06373033-20020416-M00071.png)
JPS63106766U (US06373033-20020416-M00071.png)
JPS62129061U (US06373033-20020416-M00071.png)
JPS6190856U (US06373033-20020416-M00071.png)
JPS61147274U (US06373033-20020416-M00071.png)
JPH0282031U (US06373033-20020416-M00071.png)
JPH01107124U (US06373033-20020416-M00071.png)
JPS62148574U (US06373033-20020416-M00071.png)
JPS58175823A (ja) プラズマ気相成長装置の反応管
JPS62293713A (ja) エピタキシヤル成長装置用サセプタ−
JPH02253618A (ja) プラズマ処理装置
JPS60117737A (ja) プラズマcvd装置
JPS62191868U (US06373033-20020416-M00071.png)
JPS6320482A (ja) 気相反応装置
JPH0245627U (US06373033-20020416-M00071.png)
JPH0320434U (US06373033-20020416-M00071.png)
JPS61196523U (US06373033-20020416-M00071.png)
JPS62170627U (US06373033-20020416-M00071.png)
JPS61177440U (US06373033-20020416-M00071.png)
JPH0210470U (US06373033-20020416-M00071.png)