JPS6169118A - Liquid-phase epitaxial growing device - Google Patents

Abstract

PURPOSE:To improve the degree of uniformity of the composition in the plane of a grown layer by a method wherein, under the condition wherein an epitaxial soluton is introduced, a substrate holder can be rotated in such a manner that the substrate will be set both in vertical and horizontal positions. CONSTITUTION:A substrate accommodating part 6 is positioned under a solution reservoir 2a by slidingly moving a cylindrical substrate holder 5, the epitaxial solution 4 contained in the solution reservoir 2a is introduced into the substrate accommodating part 6, and the solution is brought to come in contact with an accommodating substrate 7. The substrate holder 5 is rotated, the substrate 7 is horizontally positioned, and an epitaxial growing process is performed. The substrate accommodating part 6 is positioned above the waste liquid reservoir 3a by slidingly moving the substrate holder 5, the slit direction of the accommodating part 6 is positioned vertically, and the used epitaxial growing solution is discharged into the waste liquor reservoir 3a. The accommodating part 6 is slidingly moved to the point located below the solution reservoir 2b wherein another epitaxial growing solution is filled up, and a different grown layer is formed by performing the rotating, sliding and exhausting operations.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention is applicable to the production of compound semiconductor devices such as GaAs.
Related to Liquid Phase Epitaxial Growth Apparatus for Epitaxial Growth from Liquid Phase Used in Liquid Phase Epitaxial Growth Apparatus, Conventional Technology In general, while liquid phase epitaxial growth can obtain high quality crystals, it is poor in mass productivity and requires the growth of a large number of crystals in one growth process. It was difficult to obtain the substrate.

As a solution to this problem, conventionally, as shown in the cross-sectional view of FIG. Introduced 4 and grew 1! ! : After that, the epitaxial solution is disposed of in the waste liquid reservoir 13 to complete the growth, thereby allowing epitaxial growth on a large number of substrates in one growth process.

C.6 Problems to be Solved by the Invention However, in the conventional example as described above, since the growth substrate is vertical or inclined during epitaxial growth,
Among the epitaxial solutions that come into contact with this, the quality of the influence of gravity is different between the solution that contacts the upper part of the substrate and the solution that contacts the lower part, and as a result, the epitaxial layer that is formed 44j is Differences in shape and quality, e.g. growth layer thickness or InGaA
In the case of a multicomponent growth layer such as sP, problems such as different compositions may occur.

21. Technical Means for Solving the Problems In order to solve the above problems, the present invention provides a method for the substrates accommodated in the substrate accommodating portion of a substrate holder having a biased substrate accommodating portion for accommodating a plurality of substrates. With the epitaxial solution being introduced from a solution reservoir filled with the epitaxial solution in order to bring it into contact with the substrate, the substrate holder is rotatable so that the substrate can attain vertical and horizontal self-positions t and 9.

E, Example Next, the present invention will be explained by examples.

Figure 1 (a) shows a carbon fiber according to an embodiment of the present invention.
-1'VcK long group 9' accommodation I-1 state C
) gl@mu, Iji9(b) is a cross-sectional view, same figure tc
) is a cross-sectional view of the substrate holder rotated from the position shown in FIGS. First, Figure 1 (
In a), the ceiling of the elongated port body 1, which has a hollow part in the center into which the cylindrical substrate holder 5 can slide in and out, is provided with a bottomless epitaxial solution tank at an appropriate interval in the length direction. Drainage reservoirs 3a and 3b are provided on the floor of the port body 1, and the drain reservoirs 3a and 3b are located at the bottom by shifting the position 1jf from the solution reservoir on the ceiling. As shown in FIG. 1(b), three rows of slit hooks parallel to the diametrical direction are provided, and one side of each slit is recessed in the top to form a substrate accommodating portion 6 in which the growth substrate 7 is accommodated. is provided. In such a port, the substrate holder 5 is slid in the 7-direction direction to position the substrate accommodating portion below the solution reservoir 2a. At this position, the epitaxial solution 4 in the solution reservoir 2a is introduced into the substrate accommodating section 6 and comes into contact with the accommodating substrate 7. In this state, the substrate holder 5 is rotated so that the substrate, which was in a vertical position, becomes horizontal as shown in FIG. 1(C), and epitaxial growth is performed. Then, slide the substrate holder 5 again to position the substrate accommodating part 6 on top of the drainage reservoir 3a, rotate the substrate holder, make the slit direction of the accommodating part 6 vertical, and remove the used part from the accommodating part. The epitaxial solution is discharged into the drainage reservoir 3a. Next, the housing part 6 is slid under the solution reservoir 2b filled with a separate epitaxial solution, and the same rotation is performed.
Further, one sliding and ejecting operation is repeated to form a different growth layer.

Figures 2 (ta) to (dJ) are cross-sectional views for explaining liquid phase epitaxial growth in ports according to other embodiments of the present invention. Epitaxial solution reservoirs 8a, 8
83 of the solutions b are introduced into the substrate accommodating part provided in the substrate holder 5. In FIG. 2B, the substrate holder 5 is rotated to the right by about 45 degrees to make the substrate 7 in the substrate storage section horizontal, and in this state, the first layer of epitaxial & long-layer film is applied to the substrate 7. Next, as shown in FIG. 2(C), the substrate holder is rotated 90 degrees to the left to make the substrate accommodating part vertical, and the solution used for the first layer epitaxial growth is discharged into the drainage reservoir 9 below. Then, as shown in FIG. 2 1dl, rotate the substrate holder by 45 degrees to the left, and
The epitaxial solution 4 in the solution reservoir 8b is introduced into the substrate accommodating part 6 by aligning the bottom of the substrate with the slit opening of the substrate accommodating part 6. Then, as shown in FIG. A second epitaxial layer is grown. In this way, in this example, a two-layer growth layer can be formed by simply rotating the substrate holder, without requiring the sliding movement of the substrate holder as in the example shown in FIG.

8. Effects of the Invention The device of the present invention can be used as described above, for example, id',
When InGaAsP is epitaxially grown on an InP substrate, the degree of lattice matching within the plane of the grown layer and the degree of variation in the photoluminescence emission wavelength are evaluated by X-ray measurement and photoluminescence measurement.
The uniformity of the composition within the growth/1# plane was significantly improved, being less than 1/10 that of the conventional method.

[Brief explanation of drawings]

FIG. 1(a) is a vertical cross-sectional view showing a port according to an embodiment of the present invention and a board set in its board accommodating part, and FIG.
) is a cross-sectional view, FIG. 2(e) is a cross-sectional view of the accommodation board horizontally from the state of FIG.
3 is a cross-sectional view of the process order of a board according to another example of the present invention in which epitaxial growth is performed only by rotation without sliding wJ, and FIG. 3 is a cross-sectional view of a port portion of a conventional liquid phase epitaxial apparatus. 1--- Port body, 2a, 2b, 8a, 8b. 12...Solution reservoir, 3a, 3b, 9.13...
...Drainage reservoir, 4...Epitaxial solution L
5, 15...Substrate holder, 6...Substrate accommodating section, 7...Growth substrate. /Edit ~・ Agent Patent Attorney Susumu Uchihara f' 7:, -! Ogi 81 ward

Claims (1)

[Claims] In a liquid phase epitaxial growth apparatus including a port including a solution reservoir filled with an epitaxial solution and a substrate holder having a substrate accommodating part for accommodating a plurality of substrates, the substrate holder accommodates the substrates accommodated in the substrate accommodating part. A liquid phase epitaxial growth apparatus characterized in that the substrate is rotatable so that it can take both horizontal and vertical positions in a state in which the epitaxial solution in the solution reservoir is introduced into the liquid phase epitaxial growth apparatus.