JPS6166962U - - Google Patents
Info
- Publication number
- JPS6166962U JPS6166962U JP15187984U JP15187984U JPS6166962U JP S6166962 U JPS6166962 U JP S6166962U JP 15187984 U JP15187984 U JP 15187984U JP 15187984 U JP15187984 U JP 15187984U JP S6166962 U JPS6166962 U JP S6166962U
- Authority
- JP
- Japan
- Prior art keywords
- groove
- silicon
- diameter
- metal film
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
第１図及び第２図は本考案の概略断面図及び横
断面図、第３図は凹溝の光の入射角θを拡大説明
図、第４図は入射角と光電流ＩＰとの関係を示す
線図である。
１…Ｎ＋シリコンＨ、２…ＮシリコンＨ、３…
ＰシリコンＨ、４…Ｐ＋シリコンＨ、５…ＳｉＯ
２膜、６…Ａｌ等メタル膜、６′…Ｐ電極メタル
膜、７…凹座部メタル膜、８…Ｎ電極メタル膜、
Ａ…凹溝、Ｂ…開孔窓、Ｊ…ＰＮ接合面、ｈ…Ｐ
Ｎ接合深さ、Ｈ…凹溝深さ、Ｗ…開孔窓径、ｔ…
ＳｉＯ２＋メタル層の厚み。
Figures 1 and 2 are a schematic cross-sectional view and a cross-sectional view of the present invention, Figure 3 is an enlarged explanatory diagram of the incident angle θ of light in the groove, and Figure 4 shows the relationship between the incident angle and photocurrent IP. FIG. 1...N+ silicon H, 2...N silicon H, 3...
P silicon H, 4...P+silicon H, 5...SiO
2 film, 6... Metal film such as Al, 6'... P electrode metal film, 7... Concave seat metal film, 8... N electrode metal film,
A...concave groove, B...perforated window, J...PN joint surface, h...P
N junction depth, H...groove depth, W...hole window diameter, t...
Thickness of SiO 2+ metal layer.
Claims (1)
設け、かつ該凹溝の中心上部に凹溝の径よりも小
さい開孔窓を設けたことを特徴とする半導体受光
素子。 1. A semiconductor light-receiving element, characterized in that a hemispherical groove exposing a PN junction surface is provided on the inner surface, and an aperture window smaller than the diameter of the groove is provided above the center of the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15187984U JPH079391Y2 (en) | 1984-10-08 | 1984-10-08 | Semiconductor light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15187984U JPH079391Y2 (en) | 1984-10-08 | 1984-10-08 | Semiconductor light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6166962U true JPS6166962U (en) | 1986-05-08 |
| JPH079391Y2 JPH079391Y2 (en) | 1995-03-06 |
Family
ID=30709975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15187984U Expired - Lifetime JPH079391Y2 (en) | 1984-10-08 | 1984-10-08 | Semiconductor light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH079391Y2 (en) |
-
1984
- 1984-10-08 JP JP15187984U patent/JPH079391Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH079391Y2 (en) | 1995-03-06 |