JPS6161251B2 - - Google Patents
Info
- Publication number
- JPS6161251B2 JPS6161251B2 JP54084983A JP8498379A JPS6161251B2 JP S6161251 B2 JPS6161251 B2 JP S6161251B2 JP 54084983 A JP54084983 A JP 54084983A JP 8498379 A JP8498379 A JP 8498379A JP S6161251 B2 JPS6161251 B2 JP S6161251B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- aperture
- linear
- shaping
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 60
- 238000007493 shaping process Methods 0.000 claims description 36
- 238000000609 electron-beam lithography Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は電子ビーム描画装置、特に試料を走査
するための電子ビームとして実質的に線状の長四
辺形断面をもつ電子ビームを用いるタイプの電子
ビーム描画装置関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam lithography apparatus, and more particularly to an electron beam lithography apparatus of the type that uses an electron beam having a substantially linear rectangular cross section as an electron beam for scanning a sample.
典形的な電子ビーム描画装置によれば、試料は
収束されたスポツト状の電子ビームでもつて走査
され、それによつて試料に所望の図形が描画され
る。しかし、これは細かい描画図形を得るのには
適しているが、大きい描画図形を得る場合には描
画時間が長くなるという問題をもつている。 According to a typical electron beam drawing apparatus, a sample is scanned with a focused spot-shaped electron beam, thereby drawing a desired figure on the sample. However, although this method is suitable for obtaining detailed drawing figures, it has the problem that drawing time becomes long when obtaining large drawing figures.
この問題を解決するためには、試料を走査すべ
き電子ビームとして、線状の長四辺形断面をもち
かつその長さが描画されるべき図形に応じて可変
可能な線状電子ビームを用いることが考えられ
る。このような線状電子ビームを電子ビームが通
る絞りの孔形状を線状の長四辺形状にすることに
よつて得ることができる。又、電子レンジにより
上記絞りの像が形成される位置にナイフエツジ形
の絞りを、そのナイフエツジが線状電子ビームの
長さ方向と直角になるように配置し、かつ線状電
子ビームを偏向によりその長さ方向に移動させれ
ば、描画過程においても描画されるべき図形に応
じて線状電子ビームの長さを迅速に変えることが
できる。 In order to solve this problem, it is necessary to use a linear electron beam that has a long rectangular linear cross section and whose length can be varied depending on the figure to be drawn, as the electron beam that scans the sample. is possible. Such a linear electron beam can be obtained by making the aperture of the aperture through which the electron beam passes into a linear elongated quadrilateral shape. In addition, a knife edge-shaped aperture is placed at the position where the image of the aperture is formed by the microwave oven, so that the knife edge is perpendicular to the length direction of the linear electron beam, and the linear electron beam is deflected. If the linear electron beam is moved in the length direction, the length of the linear electron beam can be quickly changed during the drawing process according to the figure to be drawn.
しかし、両絞り間に配置される電子レンジの特
性上線状電子ビームは回転し、かつその回転量が
装置によつて異なるのは実際にはさけがたいと共
に、掃除のために装置を分解したような場合もそ
の分解前と分解して再組立した後で上記回転量が
異なるのは実際にはさけがたいため、正確な描画
を行なうのはむずかしい。又上記のように線状電
子ビームの回転量が異なるということはナイフエ
ツジ形絞りのナイフエツジと線状電子ビームとの
直交性を得るのがむずかしいことを意味し、これ
は又線状の電子ビームの断面を長四辺形にするの
がむずかしいことを意味する。線状電子ビームの
断面が長四辺形でない場合は、線状電子ビームの
端部の電子密度が減少し、描画された図形の線状
電子ビーム端部に相当する部分が不鮮明となる。
以上のようなことから、上記方法はそのままでは
実用性に乏しい。 However, due to the characteristics of the microwave oven placed between the two apertures, the linear electron beam rotates, and the amount of rotation varies depending on the device. Even in such a case, it is difficult to draw accurately because it is actually inevitable that the amount of rotation will be different before and after disassembly and after disassembly and reassembly. Furthermore, the fact that the amount of rotation of the linear electron beam is different as mentioned above means that it is difficult to obtain orthogonality between the knife edge of the knife edge type aperture and the linear electron beam. This means that it is difficult to make the cross section into a rectangular shape. When the cross section of the linear electron beam is not a long quadrilateral, the electron density at the end of the linear electron beam decreases, and the portion of the drawn figure corresponding to the end of the linear electron beam becomes unclear.
For the reasons mentioned above, the above method is not practical as it is.
これらの問題を解決するためには、両方の絞り
又はその一方を機械的に回転する方法や両絞り間
において線状電子ビームを電気的又は磁気的に回
転させる方法などが考えられる。しかし、いずれ
にしても、高精度の回転補正装置とその補正操作
が必要である。 In order to solve these problems, there may be a method of mechanically rotating both apertures or one of them, or a method of electrically or magnetically rotating a linear electron beam between both apertures. However, in any case, a highly accurate rotation correction device and its correction operation are required.
本発明はかかる点に鑑みてなされたもので、そ
の目的とするところは、回転補正の必要なしに線
状の長四辺形断面をもつ電子ビームを得ることが
できる電子ビーム描画装置を提供することにあ
る。本発明の特徴は、前段の整形絞り孔を実質的
に円形とすると共に後段の整形絞り孔を線状と
し、それによつて試料に投射される電子ビームの
断面を線状の長四辺形状にし、更に後段の整形絞
りの前に配置された電子レンジと後段の整形絞り
間に偏向装置を配置して、この偏向装置により第
１の整形絞りを通つた電子ビームを偏向し、それ
によつて試料に投射される電子ビームの線状の長
四辺形断面の長さを可変するようにした点にあ
る。 The present invention has been made in view of the above, and an object of the present invention is to provide an electron beam lithography apparatus that can obtain an electron beam having a linear long quadrilateral cross section without the need for rotational correction. It is in. The characteristics of the present invention are that the shaping aperture in the first stage is substantially circular, and the shaping aperture in the second stage is linear, so that the cross section of the electron beam projected onto the sample is shaped like a linear long quadrilateral. Furthermore, a deflection device is arranged between the microwave oven placed before the rear shaping aperture and the rear shaping aperture, and this deflection device deflects the electron beam that has passed through the first shaping aperture, thereby directing the electron beam to the sample. The point is that the length of the linear long quadrilateral cross section of the projected electron beam is made variable.
本発明の一実施例を第１図を参照して説明する
に、電子銃１から放出される電子ビームは電極か
らなるブランキング用の偏向装置２を通り、整形
絞り３に投射される。整形絞り３は第２図に示さ
れるように円形絞り孔４をもつており、したがつ
てこの絞り孔を通つた電子ビームは円形状に整形
された断面形状をもつ。この整形された電子ビー
ムは、円形絞り孔４の像が電磁形の投影電子レン
ズ５によつて整形絞り６上に形成されるように該
整形絞りに投射される。この整形絞りは第３図に
示されるように線状絞り孔７をもつている。した
がつてこの絞り孔を通つた電子ビームは線状の長
四辺形状断面をもつ。投影電子レンズ５と整形絞
り６の間には静電形の偏向装置８が配置され、該
偏向装置によつて、整形絞り６に入射する電子ビ
ームが線状絞り孔７の長手方向に偏向されるよう
になつている。したがつて、偏向装置８を働らか
せることによつて、整形絞り６に入射する電子ビ
ームが１０ａから１０ｂに移動されたとすれば、
線状絞り孔７を通つた電子ビームはこの絞り孔と
円形絞り孔４の両方によつて規制されて、線状の
長四辺形断面形状をもつようになる。すなわち、
線状絞り孔７を通る電子ビームの線長はその最大
値LmからLiに変わるようになる。このようにし
て整形された電子ビームは線状絞り孔７の像が電
磁形の対物電子レンズ１１によつて試料１２上に
形成されるように該試料に投射される。整形絞り
６と対物電子レンズ１１の間には静電形の偏向器
１３が、対物電子レンズ１１と試料１２の間には
電磁形の偏向器１４がそれぞれ配置され、又図示
は省略されてあるが、実際には試料１２をＸ方向
およびそれと直角なＹ方向に移動させるための試
料移動装置が備えられている。 One embodiment of the present invention will be described with reference to FIG. 1. An electron beam emitted from an electron gun 1 passes through a blanking deflection device 2 made of electrodes and is projected onto a shaping aperture 3. As shown in FIG. 2, the shaping aperture 3 has a circular aperture 4, so that the electron beam passing through this aperture has a circular cross-sectional shape. This shaped electron beam is projected onto a shaping aperture 6 such that an image of the circular aperture aperture 4 is formed on the shaping aperture 6 by an electromagnetic projection electron lens 5. This shaping diaphragm has a linear diaphragm hole 7 as shown in FIG. Therefore, the electron beam passing through this aperture has a linear elongated rectangular cross section. An electrostatic deflection device 8 is disposed between the projection electron lens 5 and the shaping aperture 6, and the electron beam incident on the shaping aperture 6 is deflected in the longitudinal direction of the linear aperture hole 7. It is becoming more and more common. Therefore, if the electron beam incident on the shaping aperture 6 is moved from 10a to 10b by operating the deflection device 8, then
The electron beam passing through the linear aperture 7 is regulated by both this aperture and the circular aperture 4, so that it has a linear rectangular cross-sectional shape. That is,
The line length of the electron beam passing through the linear aperture 7 changes from its maximum value Lm to Li. The electron beam thus shaped is projected onto the sample 12 such that an image of the linear aperture 7 is formed on the sample 12 by an electromagnetic objective electron lens 11. An electrostatic deflector 13 is disposed between the shaping aperture 6 and the objective electron lens 11, and an electromagnetic deflector 14 is disposed between the objective electron lens 11 and the sample 12, and these are not shown. However, in reality, a sample moving device is provided for moving the sample 12 in the X direction and in the Y direction perpendicular thereto.
描画は予め定められた図形通り行なわれる必要
があり、したがつて実際には描画されるべき図形
に応じて偏向装置２によつて電子ビームをブラン
キングしたり、静電形の偏向装置８を用いて線状
電子ビームの線長をコントロールしなければなら
ない。これらのコントロール、偏向装置１３，１
４のコントロールおよび試料移動装置のコントロ
ールは描画されるべき図形をプログラム化したコ
ンピユーターによつて行なわれる。 Drawing must be performed in accordance with a predetermined figure, so in practice, depending on the figure to be drawn, the electron beam may be blanked by the deflection device 2, or the electrostatic deflection device 8 may be blanked. The line length of the linear electron beam must be controlled by using These controls, deflection devices 13,1
4 and the control of the sample moving device are performed by a computer programmed with the figure to be drawn.
前述した本発明の実施例においては、整形絞り
３の絞り孔４は円形であり、一方整形絞り６の絞
り孔７は線状であるため、第３図から明らかなよ
うに、整形絞り６に投射される電子ビーム１０ａ
又は１０ｂが投影電子レンズ５によつて矢印１５
ａ，１５ｂの方向にいかに回転されようとも、整
形絞り６を通つた線状の長四辺形電子ビームが回
転することはなく、しかもその端部の形は一定で
ある。したがつて、線状の長四辺形ビームと整形
絞り６との間の角度関係を考慮する必要が全くな
いと共に、電子ビームの回転補正の問題が生ずる
ことが全くない。 In the embodiment of the present invention described above, the aperture hole 4 of the shaping aperture 3 is circular, while the aperture hole 7 of the shaping aperture 6 is linear, so as is clear from FIG. Projected electron beam 10a
Or, 10b is projected by the projection electron lens 5 into the arrow 15.
No matter how much it is rotated in the directions a and 15b, the linear elongated rectangular electron beam that has passed through the shaping aperture 6 does not rotate, and the shape of its end remains constant. Therefore, there is no need to consider the angular relationship between the linear long quadrilateral beam and the shaping aperture 6, and there is no problem of rotational correction of the electron beam.
第３図から明らかなように、円形状の電子ビー
ムが１０ｂの位置にあるときは、整形絞り６の絞
り孔７を通る電子ビームの右側端部は円弧状にな
るので、そのビームの断面は厳密な意味において
は長四辺形であるとはいいがたい。しかし、絞り
孔７の幅をｄ、円形電子ビームの半径をｒとすれ
ば、変形量ΔｒはΔｒ＝ｒ−√2−（２）２
であるから、たとえばｄ＝0.25μｍ，ｒ＝2.5μ
ｍとすれば、Δｒ≒0.003μｍとなる。これは実
用的には全く無視し得る程度の値であり、この点
で絞り孔７を通る線状の電子ビームの断面は事実
上長四辺形であるということができる。もちろ
ん、変形量Δｒをもつと小さくするためには、ｒ
をもつと大きくすればよい。 As is clear from FIG. 3, when the circular electron beam is at the position 10b, the right end of the electron beam passing through the aperture 7 of the shaping aperture 6 has an arc shape, so the cross section of the beam is In the strict sense, it cannot be said to be a long quadrilateral. However, if the width of the aperture hole 7 is d and the radius of the circular electron beam is r, then the amount of deformation Δr is Δr=r−√ 2 −(2) 2
Therefore, for example, d=0.25μm, r=2.5μ
If m, then Δr≈0.003 μm. This value is completely negligible in practical terms, and in this respect it can be said that the cross section of the linear electron beam passing through the aperture hole 7 is substantially a rectangle. Of course, in order to reduce the amount of deformation Δr, r
If you have , just make it bigger.
第３図の例では、線状絞り孔７を通る、最大長
さLmをもつ線状の長四辺形電子ビームの右側端
部は線状絞り孔７の右側端部によつて規制されて
いるが、円形電子ビームが１０ｃの位置にくるよ
うに静電形の偏向装置８を働かかせれば、同様に
最大長さLmをもつ線状の長四辺形電子ビームを
得ることができるので、線状絞り孔７の右側端部
はなくともよい。 In the example of FIG. 3, the right end of the linear elongated rectangular electron beam with maximum length Lm passing through the linear aperture 7 is regulated by the right end of the linear aperture 7. However, if the electrostatic deflection device 8 is operated so that the circular electron beam comes to the position 10c, a linear rectangular electron beam with a maximum length Lm can be obtained in the same way. The right end of the aperture hole 7 may be omitted.
整形絞り３と６の位置関係を上記実施例の場合
と逆にしても線状の長四辺形断面をもつ電子ビー
ムを得ることができる。しかし、この場合は、そ
の電子ビームは投影電子レンズ５による電子ビー
ム回転特性の影響を直接受けるので、まともな描
画を行なうためには回転補正手段を用いざるを得
なくなる。この点で、整形絞り３と６を逆に配置
することは本発明の目的にそぐわない。 Even if the positional relationship between the shaping apertures 3 and 6 is reversed from that in the above embodiment, an electron beam having a linear long quadrilateral cross section can be obtained. However, in this case, since the electron beam is directly affected by the electron beam rotation characteristics caused by the projection electron lens 5, rotation correction means must be used in order to perform proper drawing. In this respect, the reverse arrangement of shaping apertures 3 and 6 is not compatible with the purpose of the invention.
又、整形絞り６を整形絞り３と近接した位置に
配置しても線状の長四辺形電子ビームを得ること
が可能である。しかし、この場合も同様に線状の
長四辺形電子ビームは投影電子レンズ５による電
子レンズ５による電子ビーム回転特性の影響を直
接受けるので、まともな描画を行なうためには回
転補正手段を用いざるを得ない。この点で、整形
絞り６を整形絞り３の位置に近接して配置するこ
とは本発明の目的にそぐわない。加えて、この場
合、線状の長四辺形電子ビームの長さを可変する
ためには実際上は両絞り又はその一方を可動にす
る必要があると考えられるが、このようなやり方
は高速描画には全く適していない。 Further, even if the shaping diaphragm 6 is placed close to the shaping diaphragm 3, it is possible to obtain a linear elongated rectangular electron beam. However, in this case as well, since the linear long rectangular electron beam is directly affected by the electron beam rotation characteristics caused by the projection electron lens 5, rotation correction means must be used in order to perform proper drawing. I don't get it. In this respect, arranging the shaping diaphragm 6 close to the position of the shaping diaphragm 3 is not suitable for the purpose of the present invention. In addition, in this case, in order to vary the length of the linear rectangular electron beam, it is thought that it is actually necessary to move both apertures or one of them; is not suitable at all.
以上の説明から明らかなように、本発明によれ
ば、回転補正の必要なしに線状の長四辺形断面を
もつ電子ビームを得ることができる電子ビーム描
画装置が提供される。 As is clear from the above description, the present invention provides an electron beam lithography apparatus that can obtain an electron beam having a linear long quadrilateral cross section without the need for rotational correction.
第１図は本発明にもとづく一実施例を示す電子
ビーム描画装置の電子光学系を示す図、第２図お
よび第３図は第１図の整形絞りの一実施例を示す
拡大平面図である。
１……電子銃、３および６……整形絞り、４お
よび７……絞り孔、５……投影電子レンズ、１１
……対物電子レンズ、１２……試料。
FIG. 1 is a diagram showing an electron optical system of an electron beam lithography apparatus showing an embodiment based on the present invention, and FIGS. 2 and 3 are enlarged plan views showing an embodiment of the shaping aperture shown in FIG. . 1... Electron gun, 3 and 6... Shaped aperture, 4 and 7... Aperture hole, 5... Projection electron lens, 11
...Objective electron lens, 12...Sample.
Claims (1)
と、該第１の整形絞りを通つた電子ビームを予め
定められた位置に投射するための電子レンズと、
上記予め定められた位置に配置された、上記電子
レンズによつて投射される電子ビームを整形する
ための第２の整形絞りと、該第２の整形絞りを通
つた電子ビームを試料に投射するための手段とを
有する電子ビーム描画装置において、上記第１の
整形絞りは実質的に円形の絞り孔を、上記第２の
整形絞りは線状絞り孔をそれぞれ有し、それによ
つて上記試料に投射される電子ビームが線状の長
四辺形断面をもつように構成されており、更に上
記電子レンズおよび第２の整形絞り間に偏向装置
を配置して、該偏向装置により上記第１の整形絞
りを通つた電子ビームを偏向し、それによつて上
記電子ビームの線状の長四辺形断面の長さを可変
するように構成されていることを特徴とする電子
ビーム描画装置。1 a first shaping aperture for shaping an electron beam; an electron lens for projecting the electron beam passing through the first shaping aperture to a predetermined position;
a second shaping aperture disposed at the predetermined position for shaping the electron beam projected by the electron lens; and projecting the electron beam passing through the second shaping aperture onto the sample. In the electron beam lithography apparatus, the first shaping aperture has a substantially circular aperture hole, and the second shaping aperture has a linear aperture hole. The projected electron beam is configured to have a linear long quadrilateral cross section, and a deflection device is further disposed between the electron lens and the second shaping aperture, and the deflection device causes the first shaping An electron beam lithography apparatus characterized in that it is configured to deflect an electron beam passing through an aperture, thereby varying the length of a linear long quadrilateral cross section of the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8498379A JPS5610926A (en) | 1979-07-06 | 1979-07-06 | Electron beam drawing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8498379A JPS5610926A (en) | 1979-07-06 | 1979-07-06 | Electron beam drawing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5610926A JPS5610926A (en) | 1981-02-03 |
| JPS6161251B2 true JPS6161251B2 (en) | 1986-12-24 |
Family
ID=13845843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8498379A Granted JPS5610926A (en) | 1979-07-06 | 1979-07-06 | Electron beam drawing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5610926A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6414435U (en) * | 1987-07-14 | 1989-01-25 | ||
| JPH0344043U (en) * | 1989-09-08 | 1991-04-24 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58189204A (en) * | 1982-04-30 | 1983-11-04 | Konishiroku Photo Ind Co Ltd | Production of high-molecular polymer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52103967A (en) * | 1976-02-05 | 1977-08-31 | Western Electric Co | Method of iluminating surface of material to be machined and apparatus therefor |
| JPS5316578A (en) * | 1976-07-30 | 1978-02-15 | Toshiba Corp | Electron beam exposure apparatus |
| JPS545663A (en) * | 1977-06-15 | 1979-01-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Device for exposing electron beam |
| JPS5413755A (en) * | 1977-06-30 | 1979-02-01 | Raytheon Co | Output coupler |
| JPS5454581A (en) * | 1977-10-11 | 1979-04-28 | Fujitsu Ltd | Electron beam exposure apparatus |
-
1979
- 1979-07-06 JP JP8498379A patent/JPS5610926A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52103967A (en) * | 1976-02-05 | 1977-08-31 | Western Electric Co | Method of iluminating surface of material to be machined and apparatus therefor |
| JPS5316578A (en) * | 1976-07-30 | 1978-02-15 | Toshiba Corp | Electron beam exposure apparatus |
| JPS545663A (en) * | 1977-06-15 | 1979-01-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Device for exposing electron beam |
| JPS5413755A (en) * | 1977-06-30 | 1979-02-01 | Raytheon Co | Output coupler |
| JPS5454581A (en) * | 1977-10-11 | 1979-04-28 | Fujitsu Ltd | Electron beam exposure apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6414435U (en) * | 1987-07-14 | 1989-01-25 | ||
| JPH0344043U (en) * | 1989-09-08 | 1991-04-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5610926A (en) | 1981-02-03 |
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