JPS6159526B2 - - Google Patents
Info
- Publication number
- JPS6159526B2 JPS6159526B2 JP52119414A JP11941477A JPS6159526B2 JP S6159526 B2 JPS6159526 B2 JP S6159526B2 JP 52119414 A JP52119414 A JP 52119414A JP 11941477 A JP11941477 A JP 11941477A JP S6159526 B2 JPS6159526 B2 JP S6159526B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- vapor
- deposited layer
- compound
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 41
- 238000007740 vapor deposition Methods 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 15
- -1 hydrogen compound Chemical class 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000005019 vapor deposition process Methods 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11941477A JPS5453878A (en) | 1977-10-06 | 1977-10-06 | Forming method of vapor deposition layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11941477A JPS5453878A (en) | 1977-10-06 | 1977-10-06 | Forming method of vapor deposition layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5453878A JPS5453878A (en) | 1979-04-27 |
| JPS6159526B2 true JPS6159526B2 (US07943777-20110517-C00090.png) | 1986-12-17 |
Family
ID=14760867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11941477A Granted JPS5453878A (en) | 1977-10-06 | 1977-10-06 | Forming method of vapor deposition layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5453878A (US07943777-20110517-C00090.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174026U (US07943777-20110517-C00090.png) * | 1986-04-24 | 1987-11-05 |
-
1977
- 1977-10-06 JP JP11941477A patent/JPS5453878A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174026U (US07943777-20110517-C00090.png) * | 1986-04-24 | 1987-11-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5453878A (en) | 1979-04-27 |
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