JPS6156624B2 - - Google Patents
Info
- Publication number
- JPS6156624B2 JPS6156624B2 JP51129199A JP12919976A JPS6156624B2 JP S6156624 B2 JPS6156624 B2 JP S6156624B2 JP 51129199 A JP51129199 A JP 51129199A JP 12919976 A JP12919976 A JP 12919976A JP S6156624 B2 JPS6156624 B2 JP S6156624B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transistor
- type
- conductivity type
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims 2
- 238000002955 isolation Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12919976A JPS5353988A (en) | 1976-10-26 | 1976-10-26 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12919976A JPS5353988A (en) | 1976-10-26 | 1976-10-26 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5353988A JPS5353988A (en) | 1978-05-16 |
JPS6156624B2 true JPS6156624B2 (it) | 1986-12-03 |
Family
ID=15003581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12919976A Granted JPS5353988A (en) | 1976-10-26 | 1976-10-26 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5353988A (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5690554A (en) * | 1979-12-22 | 1981-07-22 | Toshiba Corp | Semiconductor device |
JPH10340965A (ja) * | 1997-06-10 | 1998-12-22 | Sony Corp | 半導体装置およびその製造方法 |
-
1976
- 1976-10-26 JP JP12919976A patent/JPS5353988A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5353988A (en) | 1978-05-16 |
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