JPS6155981A - 半導体発光素子 - Google Patents

半導体発光素子

Info

Publication number
JPS6155981A
JPS6155981A JP59176838A JP17683884A JPS6155981A JP S6155981 A JPS6155981 A JP S6155981A JP 59176838 A JP59176838 A JP 59176838A JP 17683884 A JP17683884 A JP 17683884A JP S6155981 A JPS6155981 A JP S6155981A
Authority
JP
Japan
Prior art keywords
layer
region
light emitting
light
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59176838A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0256837B2 (enExample
Inventor
Shigeyuki Akiba
重幸 秋葉
Katsuyuki Uko
宇高　勝之
Yukio Noda
野田　行雄
Yukitoshi Kushiro
久代　行俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP59176838A priority Critical patent/JPS6155981A/ja
Priority to US06/767,152 priority patent/US4720835A/en
Publication of JPS6155981A publication Critical patent/JPS6155981A/ja
Publication of JPH0256837B2 publication Critical patent/JPH0256837B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP59176838A 1984-08-27 1984-08-27 半導体発光素子 Granted JPS6155981A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59176838A JPS6155981A (ja) 1984-08-27 1984-08-27 半導体発光素子
US06/767,152 US4720835A (en) 1984-08-27 1985-08-19 Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59176838A JPS6155981A (ja) 1984-08-27 1984-08-27 半導体発光素子

Publications (2)

Publication Number Publication Date
JPS6155981A true JPS6155981A (ja) 1986-03-20
JPH0256837B2 JPH0256837B2 (enExample) 1990-12-03

Family

ID=16020714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59176838A Granted JPS6155981A (ja) 1984-08-27 1984-08-27 半導体発光素子

Country Status (2)

Country Link
US (1) US4720835A (enExample)
JP (1) JPS6155981A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009253097A (ja) * 2008-04-08 2009-10-29 Nippon Telegr & Teleph Corp <Ntt> 半導体光集積素子
WO2023228403A1 (ja) * 2022-05-27 2023-11-30 日本電信電話株式会社 光デバイス

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* Cited by examiner, † Cited by third party
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JPH0690369B2 (ja) * 1986-02-21 1994-11-14 国際電信電話株式会社 半導体光変調器
JPH0719928B2 (ja) * 1986-11-26 1995-03-06 日本電気株式会社 光フイルタ素子
JP2587628B2 (ja) * 1987-01-29 1997-03-05 国際電信電話株式会社 半導体集積発光素子
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
US4888783A (en) * 1987-03-20 1989-12-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
FR2636177B1 (fr) * 1988-09-08 1990-11-16 Comp Generale Electricite Source laser a semi-conducteur modulee a frequence elevee
EP0360011B1 (de) * 1988-09-22 1994-02-16 Siemens Aktiengesellschaft Abstimmbarer DFB-Laser
US5023878A (en) * 1989-09-15 1991-06-11 At&T Bell Laboratories Apparatus comprising a quantum well device and method of operating the apparatus
US5001720A (en) * 1989-12-26 1991-03-19 At&T Bell Laboratories Hybrid narrow linewidth semiconductor laser with uniform FM response
JP2808562B2 (ja) * 1990-02-27 1998-10-08 キヤノン株式会社 半導体光増幅素子
US5151915A (en) * 1990-12-27 1992-09-29 Xerox Corporation Array and method of operating a modulated solid state laser array with reduced thermal crosstalk
US5359450A (en) * 1992-06-25 1994-10-25 Synchronous Communications, Inc. Optical transmission system
US6590502B1 (en) 1992-10-12 2003-07-08 911Ep, Inc. Led warning signal light and movable support
JPH06204454A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 光変調器付半導体レーザ及びその製造方法
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
GB2285332A (en) * 1993-12-30 1995-07-05 At & T Corp Integrated laser/modulators
JPH07221400A (ja) * 1994-01-31 1995-08-18 Fujitsu Ltd 光変調器集積化発光装置及びその製造方法
GB2330679B (en) 1997-10-21 2002-04-24 911 Emergency Products Inc Warning signal light
US6614359B2 (en) * 1999-04-06 2003-09-02 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6380865B1 (en) 1999-04-06 2002-04-30 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6462669B1 (en) 1999-04-06 2002-10-08 E. P . Survivors Llc Replaceable LED modules
WO2000074973A1 (en) 1999-06-08 2000-12-14 911 Emergency Products, Inc. Rotational led reflector
US6700502B1 (en) 1999-06-08 2004-03-02 911Ep, Inc. Strip LED light assembly for motor vehicle
US6705745B1 (en) * 1999-06-08 2004-03-16 911Ep, Inc. Rotational led reflector
US6367949B1 (en) 1999-08-04 2002-04-09 911 Emergency Products, Inc. Par 36 LED utility lamp
US20050047167A1 (en) * 1999-08-04 2005-03-03 Pederson John C. Warning signal light bar
US6623151B2 (en) 1999-08-04 2003-09-23 911Ep, Inc. LED double light bar and warning light signal
US20050057941A1 (en) * 1999-08-04 2005-03-17 911Ep, Inc. 360 Degree pod warning light signal
US6547410B1 (en) 2000-07-28 2003-04-15 911 Emergency Products, Inc. LED alley/take-down light
WO2001095673A1 (en) 2000-06-06 2001-12-13 911 Emergency Products, Inc. Led compensation circuit
WO2002041276A2 (en) * 2000-11-15 2002-05-23 Snowy Village, Inc. Led warning light and communication system
US8188878B2 (en) 2000-11-15 2012-05-29 Federal Law Enforcement Development Services, Inc. LED light communication system
US7439847B2 (en) 2002-08-23 2008-10-21 John C. Pederson Intelligent observation and identification database system
EP1485975A2 (en) * 2002-03-19 2004-12-15 Bookham Technology PLC Tunable laser
GB2386965B (en) * 2002-03-27 2005-09-07 Bookham Technology Plc Electro-optic modulators
DE60306770D1 (de) * 2002-05-15 2006-08-24 Bookham Technology Ltd Abstimmbarer laser
JP4080843B2 (ja) * 2002-10-30 2008-04-23 株式会社東芝 不揮発性半導体記憶装置
US7436871B2 (en) * 2004-12-03 2008-10-14 Corning Incorporated Method and device for performing wavelength modulation with Distributed Bragg Reflector (DBR) laser
US9100124B2 (en) 2007-05-24 2015-08-04 Federal Law Enforcement Development Services, Inc. LED Light Fixture
WO2008148039A1 (en) * 2007-05-24 2008-12-04 Federal Law Enforcement Development Services, Inc. Led light communication system
US9414458B2 (en) 2007-05-24 2016-08-09 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US9455783B2 (en) 2013-05-06 2016-09-27 Federal Law Enforcement Development Services, Inc. Network security and variable pulse wave form with continuous communication
US9294198B2 (en) 2007-05-24 2016-03-22 Federal Law Enforcement Development Services, Inc. Pulsed light communication key
US9258864B2 (en) 2007-05-24 2016-02-09 Federal Law Enforcement Development Services, Inc. LED light control and management system
US11265082B2 (en) 2007-05-24 2022-03-01 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
WO2010111689A2 (en) 2009-03-26 2010-09-30 Kaiam Corp. A semiconductor laser device and circuit for and method of driving same
US8890773B1 (en) 2009-04-01 2014-11-18 Federal Law Enforcement Development Services, Inc. Visible light transceiver glasses
KR20110101980A (ko) * 2010-03-10 2011-09-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조방법
WO2012097291A1 (en) 2011-01-14 2012-07-19 Federal Law Enforcement Development Services, Inc. Method of providing lumens and tracking of lumen consumption
US9265112B2 (en) 2013-03-13 2016-02-16 Federal Law Enforcement Development Services, Inc. LED light control and management system
US20150198941A1 (en) 2014-01-15 2015-07-16 John C. Pederson Cyber Life Electronic Networking and Commerce Operating Exchange
US20170048953A1 (en) 2015-08-11 2017-02-16 Federal Law Enforcement Development Services, Inc. Programmable switch and system
WO2019116657A1 (ja) * 2017-12-15 2019-06-20 株式会社堀場製作所 半導体レーザ
CN117175349B (zh) * 2023-11-02 2024-01-23 苏州长光华芯光电技术股份有限公司 低敏感低发散角半导体发光器件及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885585A (ja) * 1981-11-16 1983-05-21 Nec Corp 半導体レ−ザ素子
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ

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* Cited by examiner, † Cited by third party
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US4563765A (en) * 1982-01-29 1986-01-07 Massachusetts Institute Of Technology Intra-cavity loss-modulated diode laser
JPS60202974A (ja) * 1983-10-18 1985-10-14 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS60124887A (ja) * 1983-12-09 1985-07-03 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885585A (ja) * 1981-11-16 1983-05-21 Nec Corp 半導体レ−ザ素子
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009253097A (ja) * 2008-04-08 2009-10-29 Nippon Telegr & Teleph Corp <Ntt> 半導体光集積素子
WO2023228403A1 (ja) * 2022-05-27 2023-11-30 日本電信電話株式会社 光デバイス
JPWO2023228403A1 (enExample) * 2022-05-27 2023-11-30

Also Published As

Publication number Publication date
JPH0256837B2 (enExample) 1990-12-03
US4720835A (en) 1988-01-19

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