JPS6155791B2 - - Google Patents

Info

Publication number
JPS6155791B2
JPS6155791B2 JP52093762A JP9376277A JPS6155791B2 JP S6155791 B2 JPS6155791 B2 JP S6155791B2 JP 52093762 A JP52093762 A JP 52093762A JP 9376277 A JP9376277 A JP 9376277A JP S6155791 B2 JPS6155791 B2 JP S6155791B2
Authority
JP
Japan
Prior art keywords
layer
temperature
manufacturing
guard ring
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52093762A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5341193A (en
Inventor
Rarufu Haatoman Adorian
Meruchioaa Hansu
Hooru Shinku Deiuitsudo
Guranto Sumisu Richaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/793,493 external-priority patent/US4127932A/en
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Publication of JPS5341193A publication Critical patent/JPS5341193A/ja
Publication of JPS6155791B2 publication Critical patent/JPS6155791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

Landscapes

  • Light Receiving Elements (AREA)
JP9376277A 1976-08-06 1977-08-06 Method of producing front illuminating silicon photodiode Granted JPS5341193A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71239276A 1976-08-06 1976-08-06
US05/793,493 US4127932A (en) 1976-08-06 1977-05-04 Method of fabricating silicon photodiodes

Publications (2)

Publication Number Publication Date
JPS5341193A JPS5341193A (en) 1978-04-14
JPS6155791B2 true JPS6155791B2 (enrdf_load_html_response) 1986-11-29

Family

ID=27108828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9376277A Granted JPS5341193A (en) 1976-08-06 1977-08-06 Method of producing front illuminating silicon photodiode

Country Status (5)

Country Link
JP (1) JPS5341193A (enrdf_load_html_response)
CA (1) CA1078948A (enrdf_load_html_response)
DE (1) DE2734726C2 (enrdf_load_html_response)
FR (1) FR2360998A1 (enrdf_load_html_response)
GB (1) GB1561953A (enrdf_load_html_response)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (de) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar-fototransistor
JPS5789271A (en) * 1980-11-25 1982-06-03 Moririka:Kk Compound semiconductor element
JPS57104275A (en) * 1980-12-19 1982-06-29 Nec Corp Light receiving element
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
CA1301895C (en) * 1989-01-12 1992-05-26 Robert J. Mcintyre Silicon avalanche photodiode with low multiplication noise
JP2002151729A (ja) 2000-11-13 2002-05-24 Sony Corp 半導体装置及びその製造方法
CN114975672B (zh) * 2021-02-26 2024-10-22 中国科学院半导体研究所 背入射近红外增强硅雪崩光电探测器的结构及制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
JPS49116957A (enrdf_load_html_response) * 1972-10-25 1974-11-08
JPS5031777A (enrdf_load_html_response) * 1973-07-21 1975-03-28

Also Published As

Publication number Publication date
JPS5341193A (en) 1978-04-14
GB1561953A (en) 1980-03-05
DE2734726C2 (de) 1987-04-16
FR2360998A1 (fr) 1978-03-03
CA1078948A (en) 1980-06-03
FR2360998B1 (enrdf_load_html_response) 1982-04-09
DE2734726A1 (de) 1978-02-09

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