CA1078948A - Method of fabricating silicon photodiodes - Google Patents
Method of fabricating silicon photodiodesInfo
- Publication number
- CA1078948A CA1078948A CA281,617A CA281617A CA1078948A CA 1078948 A CA1078948 A CA 1078948A CA 281617 A CA281617 A CA 281617A CA 1078948 A CA1078948 A CA 1078948A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- forming
- guard ring
- channel stop
- degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 108091006146 Channels Proteins 0.000 claims abstract description 55
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 52
- 239000011574 phosphorus Substances 0.000 claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 230000007547 defect Effects 0.000 claims abstract description 31
- 239000012298 atmosphere Substances 0.000 claims abstract description 23
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 230000005684 electric field Effects 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 229910052796 boron Inorganic materials 0.000 claims description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 238000009792 diffusion process Methods 0.000 claims description 51
- -1 boron ions Chemical class 0.000 claims description 30
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 27
- 229910052681 coesite Inorganic materials 0.000 claims description 26
- 229910052906 cristobalite Inorganic materials 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims description 26
- 229910052682 stishovite Inorganic materials 0.000 claims description 26
- 229910052905 tridymite Inorganic materials 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000002441 reversible effect Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 229910001415 sodium ion Inorganic materials 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims 2
- 229910019213 POCl3 Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 11
- 239000007924 injection Substances 0.000 abstract description 11
- 150000002500 ions Chemical class 0.000 abstract description 6
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 230000000873 masking effect Effects 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 description 8
- 238000005247 gettering Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910018885 Pt—Au Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910020667 PBr3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- IPNPIHIZVLFAFP-UHFFFAOYSA-N phosphorus tribromide Chemical compound BrP(Br)Br IPNPIHIZVLFAFP-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000002311 subsequent effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71239276A | 1976-08-06 | 1976-08-06 | |
| US05/793,493 US4127932A (en) | 1976-08-06 | 1977-05-04 | Method of fabricating silicon photodiodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1078948A true CA1078948A (en) | 1980-06-03 |
Family
ID=27108828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA281,617A Expired CA1078948A (en) | 1976-08-06 | 1977-06-28 | Method of fabricating silicon photodiodes |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5341193A (enrdf_load_html_response) |
| CA (1) | CA1078948A (enrdf_load_html_response) |
| DE (1) | DE2734726C2 (enrdf_load_html_response) |
| FR (1) | FR2360998A1 (enrdf_load_html_response) |
| GB (1) | GB1561953A (enrdf_load_html_response) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7893515B2 (en) | 2000-11-13 | 2011-02-22 | Sony Corporation | Photodetector integrated chip |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001899A1 (de) * | 1980-01-19 | 1981-07-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Planar-fototransistor |
| JPS5789271A (en) * | 1980-11-25 | 1982-06-03 | Moririka:Kk | Compound semiconductor element |
| JPS57104275A (en) * | 1980-12-19 | 1982-06-29 | Nec Corp | Light receiving element |
| US4616247A (en) * | 1983-11-10 | 1986-10-07 | At&T Bell Laboratories | P-I-N and avalanche photodiodes |
| CA1301895C (en) * | 1989-01-12 | 1992-05-26 | Robert J. Mcintyre | Silicon avalanche photodiode with low multiplication noise |
| CN114975672B (zh) * | 2021-02-26 | 2024-10-22 | 中国科学院半导体研究所 | 背入射近红外增强硅雪崩光电探测器的结构及制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
| US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
| US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
| JPS49116957A (enrdf_load_html_response) * | 1972-10-25 | 1974-11-08 | ||
| JPS5031777A (enrdf_load_html_response) * | 1973-07-21 | 1975-03-28 |
-
1977
- 1977-06-28 CA CA281,617A patent/CA1078948A/en not_active Expired
- 1977-08-02 DE DE2734726A patent/DE2734726C2/de not_active Expired
- 1977-08-05 FR FR7724317A patent/FR2360998A1/fr active Granted
- 1977-08-05 GB GB32881/77A patent/GB1561953A/en not_active Expired
- 1977-08-06 JP JP9376277A patent/JPS5341193A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7893515B2 (en) | 2000-11-13 | 2011-02-22 | Sony Corporation | Photodetector integrated chip |
| US8664031B2 (en) | 2000-11-13 | 2014-03-04 | Sony Corporation | Method of manufacturing photodiode intergrated chip |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2360998B1 (enrdf_load_html_response) | 1982-04-09 |
| GB1561953A (en) | 1980-03-05 |
| FR2360998A1 (fr) | 1978-03-03 |
| JPS6155791B2 (enrdf_load_html_response) | 1986-11-29 |
| DE2734726C2 (de) | 1987-04-16 |
| DE2734726A1 (de) | 1978-02-09 |
| JPS5341193A (en) | 1978-04-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |