JPS6154095A - Magnetic bubble memory device - Google Patents

Magnetic bubble memory device

Info

Publication number
JPS6154095A
JPS6154095A JP59175551A JP17555184A JPS6154095A JP S6154095 A JPS6154095 A JP S6154095A JP 59175551 A JP59175551 A JP 59175551A JP 17555184 A JP17555184 A JP 17555184A JP S6154095 A JPS6154095 A JP S6154095A
Authority
JP
Japan
Prior art keywords
magnetic bubble
memory device
bubble memory
voltage
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59175551A
Other languages
Japanese (ja)
Other versions
JPH0232711B2 (en
Inventor
Keiichi Kaneko
金子 啓一
Masashi Irie
入江 正志
Koei Kamishiro
神代 光栄
Shoichi Obata
小幡 昌一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59175551A priority Critical patent/JPS6154095A/en
Publication of JPS6154095A publication Critical patent/JPS6154095A/en
Publication of JPH0232711B2 publication Critical patent/JPH0232711B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To correct driving voltage with high speed by using electric power source voltage through a two-stage smoothing circuit formed by two chock coils and two capacitors. CONSTITUTION:A two-stage smoothing circuit, which is formed by two chock coils L1 and L2 and two capacitors C1 and C2 of a magnetic bubble memory device in which a temperature detector is changed over by a switching circuit 8, is selected and the coil of the memory device is driven by power source voltage through the circuit. By the two-stage composition, the value of the choke coils and capacitors can be small and the driving voltage can adapt to the change- over of a magnetic bubble memory device with high speed and can be corrected.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁気バブルメモリ装置に係り、特に、磁気バブ
ルメモリデバイス(以下デバイスと略す)の温度を検出
して印加電圧を制御し、安定に動作させるための温度補
償電源の改善に関するものである。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a magnetic bubble memory device, and particularly to a magnetic bubble memory device (hereinafter abbreviated as device) that detects the temperature and controls the applied voltage to stabilize the device. This invention relates to improvements in temperature-compensated power supplies for operation.

磁気バブルメモリ装置ではデバイスを取り巻く磁気バブ
ル制御用コイルに電流を流し、発生する磁界で磁気バブ
ルの移動が制御されるが、最適コイル電流はデバイスの
温度により異なる。しかも、デバイスは動作させると温
度が上昇するので、安定な動作を確保するために、デバ
イスの温度に応じたコイル電流を供給する必要がある。
In a magnetic bubble memory device, a current is passed through a magnetic bubble control coil surrounding the device, and the movement of the magnetic bubbles is controlled by the generated magnetic field, but the optimum coil current varies depending on the temperature of the device. Moreover, since the temperature of the device increases when it is operated, it is necessary to supply a coil current according to the temperature of the device in order to ensure stable operation.

〔従来の技術〕[Conventional technology]

従来温度補償のために、装置内の複数のデバイスにそれ
ぞれ温度検出器を設け、この温度検出器の出力をデバイ
スの選択と同期して(一般にデバイスセレクト信号が使
用される)切り換え、補正電源に人力し、予め設定され
た温度−電圧特性に従った補正電圧が磁気バブル制御用
コイルに印加されるようになっている。
Conventionally, for temperature compensation, multiple devices in the equipment are each equipped with a temperature detector, and the output of this temperature detector is switched in synchronization with the device selection (generally, a device select signal is used), and the output is switched to the correction power supply. A correction voltage according to preset temperature-voltage characteristics is manually applied to the magnetic bubble control coil.

しかし、デバイスの切り換えには約160μsの速さが
要求され、高速でリップルの少ない温度補正された電圧
を得ることが要望されている。
However, a speed of about 160 μs is required for device switching, and it is desired to obtain a temperature-corrected voltage with low ripple at high speed.

第2図は温度検出器の出力と電源の接続方法を説明する
ための図で、デバイスセレクト信号でスイッチ5の1回
路が閉じられ、その1回路の抵抗6.7およびサーミス
タ温度検出器2a 7!l< DC/ DCコンバータ
(電源)3に接続される。
FIG. 2 is a diagram for explaining how to connect the output of the temperature detector and the power supply, in which one circuit of the switch 5 is closed by the device select signal, and the resistor 6.7 of that circuit and thermistor temperature detector 2a 7 are closed. ! l< DC/Connected to DC converter (power supply) 3.

DC/ DCコンバータ3の端子はDC/DCコンバー
タ3内の差動アンプ(図示せず)に接続されており抵抗
6.サーミスタ温度検出器2aおよび抵抗7で分割され
た電圧が差動アンプに入力される。しかし、サーミスタ
は温度により抵抗値が変化するために、前記分割された
電圧も温度に依存して変化し、DC/ DCコンバータ
3内の差動アンプに入力される。この差動アンプからは
スイッチング回路に人力された後、平滑され駆動コイル
に供給される第3図は従来の平滑回路および出力電圧の
波形を説明するための図である。
The terminals of the DC/DC converter 3 are connected to a differential amplifier (not shown) inside the DC/DC converter 3, and are connected to a resistor 6. The voltage divided by the thermistor temperature detector 2a and the resistor 7 is input to the differential amplifier. However, since the resistance value of the thermistor changes depending on the temperature, the divided voltage also changes depending on the temperature and is input to the differential amplifier in the DC/DC converter 3. After the differential amplifier inputs power to the switching circuit, it is smoothed and supplied to the drive coil. FIG. 3 is a diagram for explaining a conventional smoothing circuit and the waveform of the output voltage.

第3図1alは平滑回路を示しており、スイッチング回
路8を通った約18VP−Pの温度に対応してパルス幅
補正された電圧はチョークコイル(L)9(700μH
)、コンデンサ(C) 10 (200μH)からなる
平滑回路に通された後、デバイス駆動コイルに供給され
る。
Figure 3 1al shows a smoothing circuit, in which the voltage that has passed through the switching circuit 8 and has been pulse width corrected in accordance with the temperature of about 18VP-P is applied to the choke coil (L) 9 (700μH).
), a capacitor (C) 10 (200 μH), and then supplied to a device drive coil.

第3図(blはデバイス性0対応した温度検出器2aか
らデバイス#1対応した温度検出器2bに切り換え、さ
らに、デバイス性0対応した温度検出器2aに戻したと
きの駆動コイルに供給される電圧の変化(V、 −V2
−V、)を示しており、電圧下降時にはチョークコイル
(L)およびコンデンサ(C)のために、また、電圧上
昇時はコンデンサ(C)のために、それぞれ電圧変化に
時間がかかる〔発明が解決しようとする問題点〕 上記従来の電源平滑回路では、チョークコイルコンデン
サを大きくして平滑化を完全にすると、デバイスの切り
換え時間が約160μsの高速では、切り換え時の電圧
変化に順応できないできないという問題があった。
Figure 3 (bl is supplied to the drive coil when switching from the temperature detector 2a compatible with device type 0 to the temperature detector 2b compatible with device #1, and then back to the temperature detector 2a compatible with device type 0 Change in voltage (V, -V2
-V, ), and it takes time for the voltage to change because of the choke coil (L) and capacitor (C) when the voltage drops, and because of the capacitor (C) when the voltage rises. [Problems to be Solved] In the conventional power supply smoothing circuit described above, if the choke coil capacitor is made large to achieve complete smoothing, it will not be possible to adapt to the voltage change at the time of switching when the device switching time is high, about 160 μs. There was a problem.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、上記問題点を解消した磁気バブルメモリ装置
を提供するもので、その手段は、チョークコイルおよび
コンデンサ各2個で構成される2段の平滑回路を通して
デバイスに供給することによってなされる。
The present invention provides a magnetic bubble memory device that solves the above-mentioned problems by supplying the magnetic bubble memory to the device through a two-stage smoothing circuit consisting of two choke coils and two capacitors.

(作用) 上記磁気バブルメモリ装置においては、1段の平滑回路
の場合に比べ、チョークコイル、コンデンサの値を著し
く小さくできるので、電圧変化に伴うコンデンサの充電
、放電時間を短くできデバイスに対応した温度検出器の
切り換え時間に出力電圧変化が順応できる。
(Function) In the magnetic bubble memory device described above, the values of the choke coil and capacitor can be significantly smaller than in the case of a single-stage smoothing circuit, so the charging and discharging time of the capacitor due to voltage changes can be shortened, and the device can be The output voltage change can adapt to the switching time of the temperature sensor.

〔実施例〕〔Example〕

以下、図面を参照して本発明の実施例を詳細に説明する
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明の電圧平滑回路の構成を示す回路図であ
る。
FIG. 1 is a circuit diagram showing the configuration of a voltage smoothing circuit according to the present invention.

スイッチング回路8からの出力はチョークコイル11 
(200μH)、コンデンサ12 (47μH)からな
る第1の平滑回路に入り、次に、チョークコイル13 
(20μH)、コンデンサ14 (33μH)からなる
第2の平滑回路に入る。
The output from the switching circuit 8 is the choke coil 11
(200μH), capacitor 12 (47μH), and then choke coil 13 (47μH).
(20 μH) and enters the second smoothing circuit consisting of capacitor 14 (33 μH).

温度検出器をデバイス#0用からデバイス#1用に切り
換えるに際して、駆動コイルに供給される電圧を変化(
駆動電圧の代表値約12■、補正電圧範囲約350mV
)させた場合でも、チョークコイルおよびコンデンサの
値を小さくできるため、デバイスの切り換え時間(約1
60μs)以内で電圧補正が可能である。
When switching the temperature sensor from device #0 to device #1, change the voltage supplied to the drive coil (
Typical value of drive voltage: approx. 12■, correction voltage range: approx. 350mV
), the choke coil and capacitor values can be reduced, reducing the device switching time (approximately 1
Voltage correction is possible within 60 μs).

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、コンデンサの容量
を小さくして充電、放電の時定数を小さくでき、デバイ
ス間の高速切り換えにも順応でき、かつ、2段の平滑回
路で完全に安定した電圧がデバイスの駆動コイルに供給
されるといった効果がある。
As explained above, according to the present invention, the time constants for charging and discharging can be reduced by reducing the capacitance of the capacitor, it can adapt to high-speed switching between devices, and it can be completely stabilized with a two-stage smoothing circuit. The effect is that a voltage is supplied to the drive coil of the device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の電圧平滑回路の構成を示す回路図、 第2図は温度検出器の出力と電源の接続方法を説明する
ための図、 第3図は従来の平滑回路および出力電圧の波形を説明す
るための図である。 図において、 1は磁気バブルメモリデバイス、 2は温度検出器、    3はDC/DCC/式−タ、
4はコイル、      5はスイッチ、6.7は抵抗
、     8はスイッチング回路、9、IL 13は
チョークコイル、 10、 12.14はコンデンサ、 をそれぞれ示す。 第1図 第2v1
Fig. 1 is a circuit diagram showing the configuration of the voltage smoothing circuit of the present invention, Fig. 2 is a diagram for explaining the method of connecting the output of the temperature sensor and the power supply, and Fig. 3 is a circuit diagram showing the configuration of the voltage smoothing circuit of the present invention. FIG. 3 is a diagram for explaining waveforms. In the figure, 1 is a magnetic bubble memory device, 2 is a temperature detector, 3 is a DC/DCC/formula-ta,
4 is a coil, 5 is a switch, 6.7 is a resistor, 8 is a switching circuit, 9, IL 13 is a choke coil, 10, 12.14 is a capacitor, respectively. Figure 1 2v1

Claims (1)

【特許請求の範囲】[Claims] 複数の磁気バブルメモリデバイスのそれぞれに対応する
複数の温度検出器からなり、該温度検出器の出力が磁気
バブルデバイスの選択と同期して切り換えられ、磁気バ
ブルメモリデバイスのコイル駆動用電源に入力されて該
電源電圧が制御される磁気バブルメモリ装置において、
前記電源の出力がチョークコイルおよびコンデンサから
なる2段の平滑回路に入力されることを特徴とする磁気
バブルメモリ装置。
It consists of a plurality of temperature detectors corresponding to each of the plurality of magnetic bubble memory devices, and the output of the temperature detector is switched in synchronization with the selection of the magnetic bubble device, and is input to the power supply for driving the coil of the magnetic bubble memory device. In a magnetic bubble memory device in which the power supply voltage is controlled by
A magnetic bubble memory device characterized in that the output of the power source is input to a two-stage smoothing circuit consisting of a choke coil and a capacitor.
JP59175551A 1984-08-22 1984-08-22 Magnetic bubble memory device Granted JPS6154095A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59175551A JPS6154095A (en) 1984-08-22 1984-08-22 Magnetic bubble memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59175551A JPS6154095A (en) 1984-08-22 1984-08-22 Magnetic bubble memory device

Publications (2)

Publication Number Publication Date
JPS6154095A true JPS6154095A (en) 1986-03-18
JPH0232711B2 JPH0232711B2 (en) 1990-07-23

Family

ID=15998054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59175551A Granted JPS6154095A (en) 1984-08-22 1984-08-22 Magnetic bubble memory device

Country Status (1)

Country Link
JP (1) JPS6154095A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5459039A (en) * 1977-10-19 1979-05-12 Nec Corp Magnetic bubble device
JPS55163681A (en) * 1979-06-07 1980-12-19 Hitachi Ltd Magnetic bubble memory device
JPS5814393U (en) * 1981-07-22 1983-01-28 日立造船株式会社 Dual-purpose basket for bottle washing machines
JPS58134389A (en) * 1982-04-30 1983-08-10 ロ−レルバンクマシン株式会社 Stacker drawing mechanism for automatic teller's equipment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814393B2 (en) * 1978-05-15 1983-03-18 日本鋼管株式会社 Refractories for wind crushed slag manufacturing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5459039A (en) * 1977-10-19 1979-05-12 Nec Corp Magnetic bubble device
JPS55163681A (en) * 1979-06-07 1980-12-19 Hitachi Ltd Magnetic bubble memory device
JPS5814393U (en) * 1981-07-22 1983-01-28 日立造船株式会社 Dual-purpose basket for bottle washing machines
JPS58134389A (en) * 1982-04-30 1983-08-10 ロ−レルバンクマシン株式会社 Stacker drawing mechanism for automatic teller's equipment

Also Published As

Publication number Publication date
JPH0232711B2 (en) 1990-07-23

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