JPS6151632B2 - - Google Patents
Info
- Publication number
- JPS6151632B2 JPS6151632B2 JP58040636A JP4063683A JPS6151632B2 JP S6151632 B2 JPS6151632 B2 JP S6151632B2 JP 58040636 A JP58040636 A JP 58040636A JP 4063683 A JP4063683 A JP 4063683A JP S6151632 B2 JPS6151632 B2 JP S6151632B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma cvd
- substrate
- electrode
- film
- mesh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 108091008695 photoreceptors Proteins 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4063683A JPS59193266A (ja) | 1983-03-14 | 1983-03-14 | プラズマｃｖｄ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4063683A JPS59193266A (ja) | 1983-03-14 | 1983-03-14 | プラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59193266A JPS59193266A (ja) | 1984-11-01 |
| JPS6151632B2 true JPS6151632B2 (fr) | 1986-11-10 |
Family
ID=12586038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4063683A Granted JPS59193266A (ja) | 1983-03-14 | 1983-03-14 | プラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59193266A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1258873A2 (fr) | 2001-05-14 | 2002-11-20 | Lg Electronics Inc. | Support d'enregistrement de densité levée en forme de disque à trou central à profil asymétrique, et procédé pour sa fabrication |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61116763U (fr) * | 1984-12-06 | 1986-07-23 | ||
| EP0342113B1 (fr) * | 1988-05-06 | 1993-11-03 | Fujitsu Limited | Dispositif de formation de couche mince |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3344055A (en) * | 1964-04-29 | 1967-09-26 | Texas Instruments Inc | Apparatus for polymerizing and forming thin continuous films using a glow discharge |
| JPS57160120A (en) * | 1981-03-27 | 1982-10-02 | Fuji Electric Corp Res & Dev Ltd | Generating equipment for silicon film |
| JPS5858147A (ja) * | 1981-09-30 | 1983-04-06 | Shimadzu Corp | プラズマ処理装置 |
-
1983
- 1983-03-14 JP JP4063683A patent/JPS59193266A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3344055A (en) * | 1964-04-29 | 1967-09-26 | Texas Instruments Inc | Apparatus for polymerizing and forming thin continuous films using a glow discharge |
| JPS57160120A (en) * | 1981-03-27 | 1982-10-02 | Fuji Electric Corp Res & Dev Ltd | Generating equipment for silicon film |
| JPS5858147A (ja) * | 1981-09-30 | 1983-04-06 | Shimadzu Corp | プラズマ処理装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1258873A2 (fr) | 2001-05-14 | 2002-11-20 | Lg Electronics Inc. | Support d'enregistrement de densité levée en forme de disque à trou central à profil asymétrique, et procédé pour sa fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59193266A (ja) | 1984-11-01 |
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