JPS61502363A - Gaseous locking of tunnel entrance and exit in double floating wafer transport and processing - Google Patents

Gaseous locking of tunnel entrance and exit in double floating wafer transport and processing

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Publication number
JPS61502363A
JPS61502363A JP50243185A JP50243185A JPS61502363A JP S61502363 A JPS61502363 A JP S61502363A JP 50243185 A JP50243185 A JP 50243185A JP 50243185 A JP50243185 A JP 50243185A JP S61502363 A JPS61502363 A JP S61502363A
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Prior art keywords
dome
tunnel
wafer
exit
gaseous medium
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ボツク、エドワ−ド
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ボック、エドワ−ド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
    • H01L21/6779—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks the workpieces being stored in a carrier, involving loading and unloading

Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 例えば、オランダ国特許出願第８１０３９７９号および第８３００６４９号に二 重浮遊ウェハー輸送および処理装置が記載されており、ウェハーの輸送が媒体流 体の多数の流れによって極めて狭いトンネル内に行なわれている。[Detailed description of the invention] For example, Dutch patent applications nos. 8103979 and 8300649 Heavy floating wafer transport and processing equipment is described, where wafer transport is controlled by media flow. It is carried out in an extremely narrow tunnel by multiple streams of bodies.

トンネル内のウェハーの輸送および処理の間外側の空気を不活性ガスに交換する のがよい。こうして、輸送および処理の間のウェハーの汚染が防止でざる。Exchange the outside air with inert gas during wafer transport and processing in the tunnel It is better. Thus, contamination of the wafers during transportation and processing is prevented.

こうして、比較的高価で毒性である媒体の漏洩ができるだけ防止できる。さらに 、トンネルの入口出口を介して外側の空気が入ることができるだけ防止できる。In this way, leakage of relatively expensive and toxic media can be prevented as much as possible. moreover , can prevent outside air from entering through the tunnel entrance and exit as much as possible.

本発明の装置の特徴によれば、トンネルを取り付ける入口および出口ドームを用 い、操作の間トンネルはこのドームに結合され不活性ガスで充満される。According to a feature of the device of the invention, an entrance and exit dome for mounting the tunnel is used. During operation, the tunnel is connected to this dome and filled with inert gas.

本発明の他の特徴によれば、ドーム内のガス状媒体は、トンネル内に使用される ガス状媒体の一つと同じである。According to another feature of the invention, the gaseous medium within the dome is used within the tunnel. It is the same as one of the gaseous media.

さらに、ガス状媒体は空気よりも軽い。Furthermore, gaseous media are lighter than air.

ドームは、外側空気から遮断され、側壁に間口がもうけられトンネル通路と対応 している。ドームは、バッハ−隔室として下方向にのび、そこは少なくとも一時 的に開いて、ウェハーやウェハーのあるカセットを入れたり、取り出したりてき るようにする。The dome is isolated from the outside air and has a frontage in the side wall to accommodate the tunnel passage. are doing. The dome extends downwards as a bach-cell, which was at least temporarily to insert or remove wafers or cassettes containing wafers. so that

トンネル内で人口ドームから供給されたウェハーは、相続いて出口ドームに輸送 される。Wafers supplied from the artificial dome inside the tunnel are then transported to the exit dome. be done.

トンネル通路内へウェハーを輸送することにより、少なくとも一時的に、入口ド ームにおけるウェハーのスラストがトンネルの人口におけるウェハーの反対側の スラストよりも高くなる。By transporting the wafer into the tunnel passageway, at least temporarily The thrust of the wafer in the tunnel is the opposite side of the wafer in the tunnel population. It will be higher than the thrust.

少なくともウェハーをトンネル通路の方へ輸送する間、このドームでは、不活性 ガスの圧力がトンネル内の圧力よりも高くなる。At least during transport of the wafer towards the tunnel passage, this dome provides an inert The gas pressure becomes higher than the pressure inside the tunnel.

従ってドーム内の圧力は、外側空気の圧力よりも高く、少なくともウェハー輸送 の間、このドームは外側空気から十分に遮断される。Therefore, the pressure inside the dome is higher than the pressure of the air outside, at least when transporting wafers. During this period, this dome is well insulated from the outside air.

更に、トンネルから出口ドーム内へガス状媒体によってウェハーを輸送できるた めにトンネル通路内の圧力は、少なくとも一時的に出口ドームよりも高くなる。Additionally, the wafer can be transported by gaseous medium from the tunnel into the exit dome. Therefore, the pressure in the tunnel passage is at least temporarily higher than in the exit dome.

従って、出口ドームの圧力は外側空気の圧力よりも高いことが好ましい。Therefore, the pressure in the exit dome is preferably higher than the pressure in the outside air.

他の本発明の特徴は、図面を参照して以下の記載から明らかであろう。Other features of the invention will become apparent from the following description with reference to the drawings.

第１図は、本発明による装置の縦方向断面図を示す。FIG. 1 shows a longitudinal section through a device according to the invention.

第２図は、ウェハーカセットの供給位置における第１図の装置の人口ドームを示 す。Figure 2 shows the artificial dome of the apparatus of Figure 1 in the wafer cassette feed position. vinegar.

第３図は、カセット軌道からウェハーカセットの供給を受ける装置の変更例の断 面図。Figure 3 shows a cross section of a modified example of the device that receives wafer cassettes from the cassette track. Surface diagram.

第４図は、第１図の装置の＆Ｉ４−４に沿う断面図。FIG. 4 is a cross-sectional view of the device of FIG. 1 along line &I4-4.

第５図は、入口ドームの引き継ぎ部分の詳細を示す。Figure 5 shows details of the take-over section of the entrance dome.

第６図は、第５図の部分の拡大詳細図。FIG. 6 is an enlarged detailed view of the portion shown in FIG. 5.

第７図は、トンネルの入口に向かうカセット保持器の横方向ずれのあるドーム構 造の変更例を示す縦方向断面図。Figure 7 shows a dome structure with lateral displacement of the cassette holder towards the tunnel entrance. FIG.

第８図は、第７図の装置の拡大２１纏図。FIG. 8 is an enlarged 21-dimensional diagram of the apparatus shown in FIG. 7.

第１図において、ウェハー１２を処理する装置１０が示されている。装置ｌＯは 、主にトンネル１４からなり、入口ドーム１６と出口ドーム１８が結合されてい る。In FIG. 1, an apparatus 10 for processing a wafer 12 is shown. The device lO is , mainly consisting of a tunnel 14, with an entrance dome 16 and an exit dome 18 combined. Ru.

トンネル１４において、ウェハーの輸送と処理は、二重の浮遊状態で生じる。In the tunnel 14, wafer transport and processing occurs in a dual floating state.

トンネル１４内の装置の操作中に、不活性ガスの媒体の圧力が過剰ぎみに維持さ れ、空気と置換される。During operation of the device in the tunnel 14, the pressure of the inert gas medium is maintained at an excessive level. and replaced with air.

ドーム１６及び１８の底端部２０及び２２が問いており、それぞれシールリム２ ６及び２８を有している。The bottom ends 20 and 22 of the domes 16 and 18 are intersecting and each have a sealing rim 2. 6 and 28.

それぞれの取りつけ板３０及び３２で十分な密閉がドームに対して行なわれる。The respective mounting plates 30 and 32 provide a sufficient seal to the dome.

板はカセット３４のキャリアーとして作用し、ウェハー１２が貯蔵される。The plate acts as a carrier for the cassette 34 in which the wafers 12 are stored.

このキャリアーにおいて、機構３６がキャリアーの垂直方向の変位の為に設けら れ、ステップモーターがトンネル１４に対しカセットを垂直方向に正確に位置付 ける。In this carrier, a mechanism 36 is provided for vertical displacement of the carrier. The step motor accurately positions the cassette vertically with respect to the tunnel 14. Let's go.

空気シリンダー３８および４０のような変位構造により、・・キャリアー３０お よび３２は、上方向に変位でき、キャリアーの最高位置において、キャリアーは シールリム２６．２８にそれぞれ接する。Displacement structures such as air cylinders 38 and 40 allow carrier 30 and and 32 can be displaced upwardly, and at the highest position of the carrier, the carrier Abutting the sealing rims 26, 28 respectively.

取付は板３０の最下位置において、空のカセット３４が新しいカセットと即ちウ ェハーを有しているカセットと置き換えられる。これが第２図に示される。The installation is carried out at the lowest position of the plate 30, where the empty cassette 34 is replaced with a new cassette, i.e. cassette with a wafer. This is shown in FIG.

第３図において、変更の人口ドーム１６’において、取付は板３０“がカセット ３４゛と共にカセット軌道４２から引き出され、空になった後、軌道の方に向け られることが示されている。In Figure 3, in the modified artificial dome 16', the mounting plate 30'' is a cassette. The cassette is pulled out from the orbit 42 along with 34゛, and after it is empty, it is turned towards the orbit. It has been shown that

人口ドーム１６において、少なくとも密封の間、圧力がトンネルト１内の圧力よ りも高く維持され、その結果ウェハー１２は、相次いてこのトンネル内に引き込 まれる。ウェハーは、既に正しい引き継ぎ位置に置かれ、供給マニホールド４６ ．４８からのガス状媒体の流れにより、トンネル１４の入口５０の方に押される 。これＭ、第４図、第５図、第６図に示されている。In the artificial dome 16, at least during the sealing, the pressure is lower than the pressure inside the tunnel 1. is also maintained high, so that the wafers 12 are successively drawn into this tunnel. be caught. The wafer is already in the correct handover position and is in the supply manifold 46. ．． 48 is pushed towards the entrance 50 of the tunnel 14 . This is shown in FIGS. 4, 5, and 6.

カセット３４の側壁５２．５４は、ウェハー１２に対する十分な案内となる。ウ ェハーの汚染は、従って極めて制限され、洗浄作用によってトンネル１４には汚 染物が入らないようになっている。The side walls 52,54 of the cassette 34 provide sufficient guidance for the wafers 12. cormorant Contamination of the wafer is therefore extremely limited and the cleaning action leaves the tunnel 14 free of dirt. It is designed to prevent dyes from entering.

しかし、汚染物が減るとしても、カセットにおいて特衣昭６１−５０２３６３　 （３） さえウェハーの二重浮遊輸送が起きることが可能である。これが、第７図、第８ 図に示されている。However, even if the contaminants are reduced, the cassette is (3) Even double floating transport of wafers is possible. This is Figure 7 and 8. As shown in the figure.

カセッＩ・は繰り返しトンネル１４の方向に変位し、トンネルの前端５０゛にお いて、ウェハーの二重浮遊状態が作られる。The cassette I is repeatedly displaced in the direction of the tunnel 14 until it reaches the front end 50° of the tunnel. A double floating state of the wafer is created.

カセットの下方向への変位がウェハーのスラストブロック５Ｇの横方向の変位と 協働する。The downward displacement of the cassette corresponds to the lateral displacement of the wafer thrust block 5G. Collaborate.

出口ドーム１５において、ウェハーは相次いでトンネ。ル１４でなく、ドーム内 の低い圧力に依ってカセット内に運ばれる。これは、マニホールド５８、および ６０からのガス状媒体の流れと共働する。At the exit dome 15, the wafers tunnel one after another. Inside the dome, not in Le 14 is carried into the cassette by the low pressure of This includes manifold 58, and It cooperates with the flow of gaseous medium from 60.

カセットの側壁がウェハーに対する十分な案内となり、而も、汚染を生じること なく、汚染物は容易に除去される。The side walls of the cassette provide sufficient guidance for the wafers, but do not cause contamination. contaminants are easily removed.

カセットを二重浮遊輸送と同時に横方向へ移動することも可能である。これが第 ７図および第８図に示されている。It is also possible to move the cassette laterally simultaneously with double floating transport. This is the first 7 and 8.

二重浮遊ウェハー輸送および処理により、少なくともウェハーの各主処理で二重 浮遊状態における予洗浄が行なわれる。さらに、この場合に二重浮遊条件のおけ る後洗浄が起きることもある。Dual floating wafer transport and processing ensures that at least each main processing of wafers Pre-cleaning is carried out in a floating state. Furthermore, in this case the double floating condition Cleaning may occur after washing.

従って、ドーム１６および１８は、二重浮遊条件における予洗浄およびウニハー ニ重浮遊条件における主処理および後洗浄が起きるような装置に適用できる。Therefore, domes 16 and 18 are suitable for pre-cleaning and uniharfing in double floating conditions. Applicable to equipment where main treatment and post-cleaning occur under double flotation conditions.

出口ドームにおいてウェハーを充填したカセットを利用して、次のプロセス装置 の人口ドームにおいて、送りカセットとして、機能するようになる。これにより 、集まった汚染物は本発明によるドーム構造においては、ＩＩ！！のプロセス設 唯の洗浄部分で除去される。Utilizing the wafer-filled cassette at the exit dome, the next process equipment It comes to function as a feeding cassette in the artificial dome. This results in , the collected contaminants are reduced to II! in the dome structure according to the invention. ! process settings Only the cleaning part is removed.

人口１・−ムおよび出口ドームを含む装置の変更構造は、本発明の範囲内で可能 である。Modified constructions of the device, including population and exit domes, are possible within the scope of the invention. It is.

例えば、このような装置では、二重浮遊状態で予洗浄が行なわれ、その後、例え ば高真空でウェハーの主処理を一回または複数回行ない、その後二重浮遊状態で 後洗浄を行なう。For example, in such equipment pre-cleaning is carried out in a double floating state, after which the For example, the wafer is subjected to one or more main treatments in a high vacuum, and then in a double floating state. Perform post-cleaning.

更に、ウェハーの予洗浄のみを処理にス・ｊして行なうということも可能である 。Furthermore, it is also possible to perform only pre-cleaning of the wafer before processing. .

国際調査報告 入ＮＮＥＸ　Ｔｏ　Ｔｈｔ　ＩＮＴＥＲＮＡＴＩＯＮＡＬ　Ｓ＋＋八ＲへＨＲＥ ＰＯＲＴ　ＯＮinternational search report Enter NNEX To Tht INTERNATIONAL S++HRE to 8R PORT ON

Claims (17)

【特許請求の範囲】[Claims] １．少なくとも、ろ過度の高いガス媒体でウエハーの二重浮遊輸送および処理を 行なうためのトンネルと、基体による遮断を行なうことにより、トンネルの通路 が外側空気から隔てられるようにした構造の少なくとも一つのドームとからなる 装置。1. At a minimum, dual floating transport and processing of wafers in gas media with high filtration The passage of the tunnel is created by creating a tunnel for the tunnel and blocking it with the base. at least one dome of structure such that the structure is separated from the outside air. Device. ２．前記ドームが少なくとも一時的に少なくとも一つのウエハーの為の座を有す る請求の範囲第１項に記載の装置。2. the dome at least temporarily having a seat for at least one wafer; A device according to claim 1. ３．前記ドームが少なくとも一時的にその中にウエハーカセットを配置するよう にした請求の範囲第２項に記載の装置。3. said dome to at least temporarily place a wafer cassette therein; The apparatus according to claim 2. ４．前記ドームの頂部が封止され、その側壁に開口が設けられ、これが前記トン ネルの通路と共同し、また、前記ドームは前記間口を越えて下方向へ一定距離の びている請求の範囲第２項に記載の装置。4. The top of the dome is sealed and an opening is provided in the side wall of the dome, which allows the dome to be sealed. The dome also extends a certain distance downwardly beyond the frontage. 2. A device according to claim 2, which includes: ５．前記ドームにおいて、少なくとも一時的にガス状媒体が供給され、このガス 状媒体は二重浮遊状態の下でウエハーの輸送のために前記トンネル通路内に使用 されているガス状媒体と類似している請求の範囲第４項に記載の装置の方法。5. In said dome, a gaseous medium is supplied at least temporarily, and this gas A medium is used in the tunnel passage for the transport of wafers under double floating condition. 5. The method of the apparatus according to claim 4, which is similar to the gaseous medium in which the gaseous medium is used. ６．前記ガス状媒体が空気より軽い請求の範囲第５項に記載の装置の方法。6. 6. A method according to claim 5, wherein the gaseous medium is lighter than air. ７．前記ドームの下端に封止板が設けられ、それによって少なくとも一時的に、 ドームの下端が封止され、前記封止板は少なくとも一時的に、ドームから外され る請求の範囲第４項に記載の装置の方法。7. A sealing plate is provided at the lower end of said dome, thereby at least temporarily The lower end of the dome is sealed, and the sealing plate is at least temporarily removed from the dome. A method of the apparatus according to claim 4. ８．前記入口ドームにおいて、トンネル通路にウエハーを輸送する間、ガス状媒 体の圧力が通路内の圧力よりも高く維持される請求の範囲第５項に記載の装置の 方法。8. At the entrance dome, a gaseous medium is introduced during transport of the wafer into the tunnel passage. The device according to claim 5, wherein the body pressure is maintained higher than the pressure in the passageway. Method. ９．トンネル通路に向か、うウエハーの輸送が、通路の方向にウエハーの後端に スラストを与えるブロックによって、行なわれる請求の範囲第８項に記載の装置 の方法。9. When transporting wafers towards the tunnel passage, the back end of the wafer in the direction of the passage The device according to claim 8, carried out by means of a block providing thrust. the method of. １０．前記スラストがガス状媒体の流れによって行なわれる請求の範囲第９項に 記載の装置の方法。10. Claim 9, wherein said thrusting is carried out by a flow of gaseous medium. Method of apparatus described. １１．出口ドームにおいて、トンネル通路からウエハーを連続的に受け取る間、 ガス状媒体の圧力がトンネル通路内の圧力よりも低く維持される請求の範囲第５ 項に記載の装置の方法。11. While continuously receiving wafers from the tunnel passageway at the exit dome; Claim 5, wherein the pressure of the gaseous medium is maintained lower than the pressure within the tunnel passage. The apparatus method described in Section. １２．トンネル通路から前記通路の端にある出口ドームへウエハーを輸送する間 、ガス状媒体の流れが出口ドームの方向にウエハーに対するスラストを与える請 求の範囲第１１項に記載の装置の方法。12. During transport of wafers from a tunnel passageway to an exit dome at the end of said passageway. , the flow of gaseous medium exerts a thrust on the wafer in the direction of the exit dome. A method of the apparatus according to claim 11. １３．出口ドームにおいて、少なくとも一時的に外側空気の圧力よりも圧力が高 く維持されている請求の範囲第１２項に記載の装置の方法。13. At the exit dome, the pressure is higher than that of the outside air, at least temporarily. 13. The method of claim 12, wherein the apparatus is １４．出口ドームにおいて、封止板がカセットキャリアの支持体としても作用し 、トンネル通路に対するカセットの相連続する垂直の位置付けを行なう手段を含 む請求の範囲第７項に記載の装置の方法。14. At the exit dome, the sealing plate also acts as a support for the cassette carrier. , including means for successive vertical positioning of the cassette relative to the tunnel passageway. A method of the apparatus according to claim 7. １５．トンネル通路への方向およびトンネル通路からの方向にウエハーカセット を変位させるように、前記封止板が構成されている請求の範囲第７項に記載の装 置。15. Wafer cassettes in the direction to and from the tunnel passage The device according to claim 7, wherein the sealing plate is configured to displace the Place. １６．二重浮遊状態の少なくとも一部において、カセットにウエハーを輸送する ために、トンネルの両端が一定距離に渡って一時的にカセット内にのびる部分を 有している請求の範囲第１５項に記載の装置。16. transporting the wafer in a cassette at least in part in a double floating state; In order to 16. The apparatus of claim 15, comprising: １７．二時的処理として、ウエハーの少なくとも予洗浄と一つの主処理が行なわ れるプロセス設備を設けた請求の範囲第４項に記載の装置。17. The secondary processing includes at least a pre-cleaning and one main processing of the wafer. 5. The apparatus according to claim 4, wherein the apparatus is provided with process equipment.
JP50243185A 1984-06-04 1985-06-03 Gaseous locking of tunnel entrance and exit in double floating wafer transport and processing Pending JPS61502363A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8401777 1984-06-04
NL8401777A NL8401777A (en) 1984-06-04 1984-06-04 GAS LOCK FOR TUNNEL ENTRY AND OUTPUT, WHICH MOVES AND PROCESSES OF WAFERS USING MEDIA UNDER DOUBLE-FLOATING CONDITION.

Publications (1)

Publication Number Publication Date
JPS61502363A true JPS61502363A (en) 1986-10-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP50243185A Pending JPS61502363A (en) 1984-06-04 1985-06-03 Gaseous locking of tunnel entrance and exit in double floating wafer transport and processing

Country Status (4)

Country Link
EP (1) EP0182856A1 (en)
JP (1) JPS61502363A (en)
NL (1) NL8401777A (en)
WO (1) WO1985005758A1 (en)

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WO1999066550A1 (en) * 1998-06-19 1999-12-23 Kabushiki Kaisha Watanabe Shoko Substrate transfer device
JP2016521313A (en) * 2013-03-18 2016-07-21 エーエスエム インターナショナル エヌ． ヴェー．ＡＳＭ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． Substrate processing equipment

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DE3735449A1 (en) * 1987-10-20 1989-05-03 Convac Gmbh MANUFACTURING SYSTEM FOR SEMICONDUCTOR SUBSTRATES
DE4100526A1 (en) * 1991-01-10 1992-07-16 Wacker Chemitronic DEVICE AND METHOD FOR AUTOMATICALLY SEPARATING STACKED DISCS
US5762084A (en) * 1994-07-15 1998-06-09 Ontrak Systems, Inc. Megasonic bath
US5548505A (en) * 1994-07-15 1996-08-20 Oktrak Systems, Inc. Scrubber control system
US5745946A (en) * 1994-07-15 1998-05-05 Ontrak Systems, Inc. Substrate processing system
US5924154A (en) * 1996-08-29 1999-07-20 Ontrak Systems, Inc. Brush assembly apparatus
NL1039111C2 (en) * 2011-10-18 2013-04-22 Edward Bok EXCHANGEABLE SEMICONDUCTOR CASSETTE BEHIND A SEMICONDUCTOR TUNNEL SET-UP FOR TEMPORARILY STORING THEREIN THE RECTANGULAR PLATES PROTECTED THEREIN, ALREADY CONTAINING BASIC CHIPS.
NL1039112C2 (en) * 2011-10-18 2013-04-22 Edward Bok SEMICONDUCTOR CHIPS PROCESSED IN A SEMICONDUCTOR INSTALLATION, AND IN WHICH IT IS IN A TUNNEL SET-UP THEREOF THE PRODUCTION OF RECTANGULAR PLATES AND FINALLY IN A DEVICE THROUGH SHARING OBTAINED.
NL1039114C2 (en) * 2011-10-18 2013-04-22 Edward Bok SEMICONDUCTOR INSTALLATION, INCLUDING IN A SEMICONDUCTOR TUNNEL THE PROCESSING OF FOLLOWING RECTANGULAR PLATES, CONTAINING A NUMBER OF BASIC CHIPS FOR THE OBTAINING OF A CHIP DEVICE.
NL1039113C2 (en) * 2011-10-18 2013-04-22 Edward Bok SEMICONDUCTOR INSTALLATION, INCLUDING A SEMICONDUCTOR TUNNEL, IN WHICH THE PROCESSING OF FOLLOWING RECTANGULAR PLATES, CONTAINING A NUMBER OF SEMICONDUCTOR BASIC CHIPS, WITH A TEMPORARY STORAGE IN A LOCATED CASE.
NL1039463C2 (en) * 2012-03-13 2013-09-16 Edward Bok SEMICONDUCTOR CHIP MANUFACTURED IN A SEMICONDUCTOR INSTALLATION AND INCLUDING IN A SEMICONDUCTOR TUNNEL SET-UP OF THE RECORDING OF AN EXTREME ULTRA VIOLET LITHOGRAPHY SYSTEM FOR THE USE OF A SUMMARY OF THE SUBSIDENCE OF THE VIEW OF THE SUBSIDENCE OF THE VIEW OF THE SUBSIDENCE OF THE SUBSIDENCE OF THE VIEW.

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JPS5232150A (en) * 1975-09-05 1977-03-11 Komatsu Ltd Reusing device of heat energy of indusrrial oven waste gas
JPS5342636A (en) * 1976-09-30 1978-04-18 Yokogawa Hokushin Electric Corp Setting condition output system of data gathering equipment
JPS60500822A (en) * 1983-06-06 1985-05-30 デイコ　プロダクツ、インコーポレイテッド A belt structure for a continuously variable transmission, a transverse belt element therefor, and a method for manufacturing the belt structure for a continuously variable transmission.

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JPS4994077A (en) * 1973-01-12 1974-09-06
JPS512163A (en) * 1974-06-24 1976-01-09 Ibm
JPS5232150A (en) * 1975-09-05 1977-03-11 Komatsu Ltd Reusing device of heat energy of indusrrial oven waste gas
JPS5342636A (en) * 1976-09-30 1978-04-18 Yokogawa Hokushin Electric Corp Setting condition output system of data gathering equipment
JPS60500822A (en) * 1983-06-06 1985-05-30 デイコ　プロダクツ、インコーポレイテッド A belt structure for a continuously variable transmission, a transverse belt element therefor, and a method for manufacturing the belt structure for a continuously variable transmission.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999066550A1 (en) * 1998-06-19 1999-12-23 Kabushiki Kaisha Watanabe Shoko Substrate transfer device
US6394733B1 (en) 1998-06-19 2002-05-28 Kabushiki Kaisha Watanabe Shoko Substrate body transfer apparatus
JP2016521313A (en) * 2013-03-18 2016-07-21 エーエスエム インターナショナル エヌ． ヴェー．ＡＳＭ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． Substrate processing equipment

Also Published As

Publication number Publication date
WO1985005758A1 (en) 1985-12-19
EP0182856A1 (en) 1986-06-04
NL8401777A (en) 1986-01-02

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