JPS6149391B2 - - Google Patents
Info
- Publication number
- JPS6149391B2 JPS6149391B2 JP12347883A JP12347883A JPS6149391B2 JP S6149391 B2 JPS6149391 B2 JP S6149391B2 JP 12347883 A JP12347883 A JP 12347883A JP 12347883 A JP12347883 A JP 12347883A JP S6149391 B2 JPS6149391 B2 JP S6149391B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- susceptor
- holder
- reaction tube
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明は反応管内において試料表面に結晶成
長を行う気相成長用装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor phase growth apparatus for growing crystals on the surface of a sample in a reaction tube.
従来この種の気相成長用装置として第１図を用
いて説明する。 A conventional vapor phase growth apparatus of this type will be explained with reference to FIG.
第１図において、１は反応管、２は試料、３は
この試料２を加熱するためのサセプタ、４はこの
サセプタ３を固定するためのホルダー、５は試料
２、サセプタ３およびホルダ４を反応管１へ出し
入れする挿入棒、６はサセプタ３を加熱するため
の高周波コイル、７は結晶成長用すべき気体を供
給するための供給管である。 In Figure 1, 1 is a reaction tube, 2 is a sample, 3 is a susceptor for heating this sample 2, 4 is a holder for fixing this susceptor 3, and 5 is a reaction tube for sample 2, susceptor 3, and holder 4. An insertion rod 6 is inserted into and taken out of the tube 1, 6 is a high frequency coil for heating the susceptor 3, and 7 is a supply pipe for supplying gas for crystal growth.
第１図に示す構成において、試料２の表面に封
入された気体を気相成長させる方法を説明する。
挿入棒５に装着されたホルダー４にサセプタ３と
試料２を順次載せ、これらを挿入棒５により反応
管１内へ入れる。次に高周波コイル６を起動させ
サセプタ３を加熱させることにより試料２を加熱
し、供給管７から気体を流し、試料２の表面に気
相成長を行なう。 In the configuration shown in FIG. 1, a method for vapor phase growth of the gas sealed on the surface of the sample 2 will be explained.
The susceptor 3 and the sample 2 are placed one after another on the holder 4 attached to the insertion rod 5, and these are introduced into the reaction tube 1 by the insertion rod 5. Next, the sample 2 is heated by activating the high frequency coil 6 to heat the susceptor 3, and gas is caused to flow from the supply pipe 7 to perform vapor phase growth on the surface of the sample 2.
しかし、かかる従来の気相成長装置では、試料
２の反応管１内への出し入れの時や気相成長中
に、反応管１内に存するほこりや管壁の付着物が
試料上へ落ちることによつて成長膜の表面状態を
悪くする欠点があつた。 However, in such a conventional vapor phase growth apparatus, dust existing in the reaction tube 1 and deposits on the tube wall may fall onto the sample when the sample 2 is taken in and out of the reaction tube 1 or during vapor phase growth. Therefore, there was a drawback that the surface condition of the grown film was deteriorated.
この発明はかかる欠点を解消するためになされ
たもので、サセプタの下面に試料を設け、試料表
面を下向きに設置することにより、試料表面上へ
の成長膜以外の付着物が付着することを防ぎ、結
晶膜中に不純物が混入しない新規な気相成長用装
置を提供するものである。 This invention was made in order to eliminate such drawbacks, and by installing the sample on the lower surface of the susceptor and placing the sample surface facing downward, it is possible to prevent deposits other than the grown film from adhering to the sample surface. The present invention provides a novel vapor phase growth apparatus that does not introduce impurities into the crystal film.
以下、この発明の一実施例を第２図ａ，ｂを用
いて説明する。 An embodiment of the present invention will be described below with reference to FIGS. 2a and 2b.
第２図ｂは第２図ａ中Ａ―Ａ線で切断したとき
の断面図であり、その主要部を示す。第２図にお
いて、１は円筒形の反応管、２は試料、３は試料
２を加熱するためのサセプタで、ほぼ三角柱状と
なし試料２を第２図ａに示すように下向き側面に
配置するものである。４は試料２サセプタ３を固
定するためのホルダで、第２図ｂに示すように窓
部４ａを有し、この窓部４ａを通して試料２の表
面を導入される気体にさらしている。また、ホル
ダー４は第２図ｂに示すように試料２の両端部を
支持しているので、試料２はホルダー４とサセプ
タ３にはさまれて保持される。５は試料２、サセ
プタ３およびホルダー４を反応管内へ出し入れる
す挿入棒、６はサセプタ３を加熱するための高周
波コイル、７は結晶成長の材料となる気体の供給
管である。 FIG. 2b is a sectional view taken along the line AA in FIG. 2a, showing the main parts thereof. In Figure 2, 1 is a cylindrical reaction tube, 2 is a sample, and 3 is a susceptor for heating the sample 2, which is approximately triangular prism-shaped and the sample 2 is placed on the downward side as shown in Figure 2a. It is something. Reference numeral 4 denotes a holder for fixing the sample 2 susceptor 3, and as shown in FIG. 2b, it has a window 4a through which the surface of the sample 2 is exposed to the introduced gas. Further, since the holder 4 supports both ends of the sample 2 as shown in FIG. 2b, the sample 2 is held between the holder 4 and the susceptor 3. Reference numeral 5 designates an insertion rod for inserting and removing the sample 2, susceptor 3, and holder 4 into and out of the reaction tube; 6, a high-frequency coil for heating the susceptor 3; and 7, a supply pipe for gas serving as a material for crystal growth.
このように、上記実施例ではホルダー４上に試
料２の表面を下向きに配置し、試料２上にサセプ
タ３を載せて試料２を保持し、挿入棒５により反
応管１へ試料を挿入し、気相結晶成長を行なう。
したがつて試料２表面が下向きになつており、試
料２の出し入れの時や成長中に反応管の管壁の付
着物等の落下により試料２表面が汚染されない。 In this way, in the above embodiment, the surface of the sample 2 is placed on the holder 4 facing downward, the susceptor 3 is placed on the sample 2 to hold the sample 2, and the sample is inserted into the reaction tube 1 using the insertion rod 5. Carry out vapor phase crystal growth.
Therefore, the surface of the sample 2 faces downward, and the surface of the sample 2 is not contaminated by falling deposits on the tube wall of the reaction tube when the sample 2 is taken out or taken out or during growth.
以上のように、この発明は気相成長すべき試料
の表面を下向きにして成長を行なうように構成し
たので、試料の出し入れ時や成長中に反応管の管
壁の付着物等の落下により試料表面が汚染されな
いという効果がある。 As described above, since this invention is configured to perform vapor phase growth with the surface of the sample facing downward, the sample may be damaged by falling deposits on the tube wall of the reaction tube when taking it out or taking it in or during growth. This has the effect of not contaminating the surface.
第１図は従来の気相成長用装置を示す断面側面
図、第２図ａはこの発明による一実施例を示す断
面側面図、第２図ｂは第２図ａ中のＡ―Ａ線で切
断したときの主要部を示す断面図である。
１……反応管、２……試料、３……サセプタ、
４……ホルダー、５……挿入棒、６……高周波コ
イル、７……気体の供給管。なお、図中、同一符
号は同一、又は相当部分を示す。
FIG. 1 is a cross-sectional side view showing a conventional vapor phase growth apparatus, FIG. 2 a is a cross-sectional side view showing an embodiment of the present invention, and FIG. 2 b is taken along line AA in FIG. FIG. 3 is a cross-sectional view showing the main parts when cut. 1...Reaction tube, 2...Sample, 3...Susceptor,
4...Holder, 5...Insertion rod, 6...High frequency coil, 7...Gas supply pipe. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
気相成長させる一方の主表面を露出させる窓を有
するホルダーと、上記試料を加熱し、上記試料の
他方の主表面に接して載置されるサセプタと、こ
のサセプタと上記ホルダーを内蔵する反応管の周
囲に設けられ、上記サセプタを加熱する高周波コ
イルとを備えたことを特徴とする気相成長用装
置。1 A holder on which a sample to be vapor-phase grown is placed and a holder having a window exposing one main surface of the sample to be vapor-phase grown, and a holder that heats the sample and places it in contact with the other main surface of the sample. 1. A vapor phase growth apparatus comprising: a susceptor for heating the susceptor; and a high-frequency coil for heating the susceptor, which is provided around a reaction tube containing the susceptor and the holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347883A JPS6017076A (en) | 1983-07-08 | 1983-07-08 | Device for vapor growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347883A JPS6017076A (en) | 1983-07-08 | 1983-07-08 | Device for vapor growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6017076A JPS6017076A (en) | 1985-01-28 |
| JPS6149391B2 true JPS6149391B2 (en) | 1986-10-29 |
Family
ID=14861621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12347883A Granted JPS6017076A (en) | 1983-07-08 | 1983-07-08 | Device for vapor growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6017076A (en) |
-
1983
- 1983-07-08 JP JP12347883A patent/JPS6017076A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6017076A (en) | 1985-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6056431B2 (en) | plasma etching equipment | |
| GB1499289A (en) | Silicon crystal growing | |
| JPS6149391B2 (en) | ||
| ATE509147T1 (en) | DEVICE FOR AXIAL GRADIENT TRANSPORT AND METHOD FOR PRODUCING LARGE-FORMAT SILICON CARBIDE SINGLE CRYSTALS | |
| KR960030317A (en) | Cold Wall Vapor Growth Device | |
| JP4128842B2 (en) | Silicon single crystal pulling device | |
| JPS59132122A (en) | Vapor-phase crystal growth method | |
| US3858551A (en) | Apparatus for epitaxial growth from the liquid state | |
| JP4059990B2 (en) | Vapor growth equipment | |
| JPS6045017A (en) | Diffusion furnace | |
| JPH06295849A (en) | Impurity removing device for pipe | |
| JPH0510351Y2 (en) | ||
| JPS54157473A (en) | Vapor reaction method for semiconductor wafer | |
| JPH0859390A (en) | Growth of single crystal | |
| JPS5669297A (en) | Method of growing to large-size single crystal | |
| JPS623407Y2 (en) | ||
| JPS61219147A (en) | Boat jig for wafer | |
| JPH0648827Y2 (en) | Vertical vapor deposition equipment | |
| JPS56120600A (en) | Vapor phase growing method | |
| JPS6242428A (en) | Crystal growing device | |
| JP2641387B2 (en) | Compound semiconductor crystal growth method and crystal growth apparatus | |
| JPS572527A (en) | Reduced-pressure vapor phase growing apparatus | |
| JPS5998519A (en) | Susceptor for barrel type vapor growth apparatus | |
| JPH034028Y2 (en) | ||
| JPS61180428A (en) | Semiconductor liquid phase epitaxial growth equipment |