JPS6146071B2 - - Google Patents

Info

Publication number
JPS6146071B2
JPS6146071B2 JP55056881A JP5688180A JPS6146071B2 JP S6146071 B2 JPS6146071 B2 JP S6146071B2 JP 55056881 A JP55056881 A JP 55056881A JP 5688180 A JP5688180 A JP 5688180A JP S6146071 B2 JPS6146071 B2 JP S6146071B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
region
conductivity type
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55056881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56160079A (en
Inventor
Hisao Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5688180A priority Critical patent/JPS56160079A/ja
Publication of JPS56160079A publication Critical patent/JPS56160079A/ja
Publication of JPS6146071B2 publication Critical patent/JPS6146071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Light Receiving Elements (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP5688180A 1980-04-29 1980-04-29 Semiconductor device Granted JPS56160079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5688180A JPS56160079A (en) 1980-04-29 1980-04-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5688180A JPS56160079A (en) 1980-04-29 1980-04-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56160079A JPS56160079A (en) 1981-12-09
JPS6146071B2 true JPS6146071B2 (cs) 1986-10-11

Family

ID=13039751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5688180A Granted JPS56160079A (en) 1980-04-29 1980-04-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56160079A (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106863A (ja) * 1981-12-18 1983-06-25 Sanyo Electric Co Ltd 集積型半導体受光装置
JPH0644618B2 (ja) * 1986-04-03 1994-06-08 日産自動車株式会社 半導体受光装置

Also Published As

Publication number Publication date
JPS56160079A (en) 1981-12-09

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