JPS6144450A - Manufacture of insulation semiconductor device - Google Patents
Manufacture of insulation semiconductor deviceInfo
- Publication number
- JPS6144450A JPS6144450A JP16700384A JP16700384A JPS6144450A JP S6144450 A JPS6144450 A JP S6144450A JP 16700384 A JP16700384 A JP 16700384A JP 16700384 A JP16700384 A JP 16700384A JP S6144450 A JPS6144450 A JP S6144450A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- cut
- pellet
- exposed
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体装置］こ関し、特に放熱板の全面を樹脂
にて被覆し放熱器沓ζ直接取付を可能とした絶縁型の半
導体装置を製造する方法に関する。[Detailed Description of the Invention] Industrial Field of Application The present invention relates to a semiconductor device.In particular, it manufactures an insulated type semiconductor device in which the entire surface of a heat sink is covered with resin and the heat sink can be directly attached to the base of the heat sink. Regarding the method.
従来の技術
かかる絶縁型の半導体装置は、従来、次のような手順、
即ち、
（１） ヒートシンク部分（放熱板）と連結されたリ
ードを含む複数本のリードを複数組タイバーにて連結一
体化したリードフレームを用意し、（１１） 前記ヒ
ートシンク部分とに半導体ペレットを３１１！置固定し
、
（ｉｌＤ 前記リード部分の端部とペレット上の電極
とをワイヤボンディング等により電気的に接続して、４
φ 前記リード部分の端部とペレットとを含みヒートシ
ンク部分の外面を包囲するように樹脂モールドを施し、
Ｍ ＃記タイバ一部分を切断して個々の半導体装置に分
離する。Conventional Technology Conventionally, such an isolated semiconductor device has been manufactured using the following steps.
That is, (1) a lead frame is prepared in which a plurality of leads, including a lead connected to a heat sink portion (radiation plate), are connected and integrated with multiple sets of tie bars, and (11) semiconductor pellets are attached to the heat sink portion (311). ! (ilD) The end of the lead part and the electrode on the pellet are electrically connected by wire bonding etc.
φ A resin mold is applied so as to include the ends of the lead portions and the pellets and surround the outer surface of the heat sink portion, and a portion of the tie bar M # is cut to separate into individual semiconductor devices.
という手順により製造されていた。It was manufactured using this procedure.
発明が解決しようとする問題点
しかしながら、このような方法で製造された絶縁型半導
体装置（こおいては、ヒートシンク部分の一部又は図示
例のよう（こヒートシンク部分を連結するタイバ一部分
を樹脂モールド金型で挾持するため、第７図（イ）（ロ
）（こ示すように樹脂モールド部分ａ内に残留するタイ
バ一部分すが、高電位となるヒートシンク部分Ｃと連結
されたままであると共Ｉこ、そのタイバ一部分すの両切
断端部ｄ、（ｌが樹脂モールドａ外表面に露出した状態
となるために、この半導体装置を組み込んだ電子回路装
置の点検時に作業者がそのタイバ一部分すの露出端面ｄ
。Problems to be Solved by the Invention However, insulated semiconductor devices manufactured by such a method (in this case, a part of the heat sink part or a part of the tie bar connecting the heat sink parts (as shown in the illustrated example) are molded with resin. Since the tie bar is clamped by the mold, a portion of the tie bar remains in the resin mold part a as shown in Fig. 7 (a) and (b), but it remains connected to the heat sink part C which has a high potential. Since both cut ends d and (l) of the tie bar part are exposed on the outer surface of the resin mold a, an operator must cut the tie bar part when inspecting an electronic circuit device incorporating this semiconductor device. exposed end face d
.
ｄに触ってＷ！ＡｗＬするおそれがあるばかりで無く、
そのタイバ一部分すの露出端面ｄ、ｄと半導体装置下方
に位置する放熱器ｅとの間で絶縁破壊（放Ｎ、）シ易い
という欠点がある。特に、前記手順（Ｖ）でタイバ一部
分をヒートシンク部分の表面側から切断すると、第７図
（ロ）に模式的に示すように、その両切断端部ｄ、ｄｌ
こおいて鋭い匝れ下がりｆ。Touch d and W! Not only is there a risk of AwL, but
There is a drawback that dielectric breakdown (N radiation) is likely to occur between the exposed end faces d, d of the tie bar portions and the heat sink e located below the semiconductor device. In particular, when a portion of the tie bar is cut from the surface side of the heat sink portion in step (V), both cut ends d and dl are shown schematically in FIG. 7(b).
There is a sharp drop f.
ｆが生じることとなるため、その垂れ下がりｆ。f will occur, so the sagging f.
ｆと放熱板ｅとの間で極めて放電し易い状態となる。A state is created in which discharge is extremely likely to occur between f and the heat sink e.
本発明は、と記実情に鑑みてなされたものであって、そ
の目的は、放熱板（ヒートシンク部分）の露呈部と放熱
器との間で放電が生じることを確実１こ防止できると共
に、その切断露出端面に触っても感電することが無い絶
縁型半導体装置を製造できる方法を提供せんとすること
にある。The present invention has been made in view of the above circumstances, and its purpose is to reliably prevent discharge from occurring between the exposed portion of the heat sink (heat sink portion) and the heat sink; It is an object of the present invention to provide a method for manufacturing an insulated semiconductor device that does not cause electric shock even if the cut exposed end face is touched.
問題点を解決するための手段
上記目的を達成するために、本発明は、放熱板と連結さ
れた少なくとも１本のリードを含む複数本のリードを同
一方向に導出しかつ複数組のＩＪ −ドをタイバーにて
連結したリードフレームの放熱板表面上にマウントした
半導体ベレットの電極とリードとを電気的１こ接続し、
樹脂モールド金型１ζて放熱板の外周面が金型内面と離
隔するようにリード中間部及び放熱板の一部を挾持し半
導体ペレットを含む主要部並び１こ放熱板の外面を樹脂
材にて被覆した後、リードフレームのタイバーを切断し
て個々の半導体装置１こ分離する製造方法において、上
記放熱板の露呈部とペレット載置部の中間部を放熱板表
面側より切断して放熱板の露呈部とペレット載量部とを
電気的に分離するという手段を採用した点に特徴がある
。Means for Solving the Problems In order to achieve the above object, the present invention leads a plurality of leads including at least one lead connected to a heat sink in the same direction and connects a plurality of sets of IJ-drives. An electrical connection is made between the electrode of the semiconductor pellet mounted on the surface of the heat sink of the lead frame connected with a tie bar and the lead.
In a resin mold mold 1ζ, sandwich the middle part of the lead and a part of the heat sink so that the outer peripheral surface of the heat sink is separated from the inner surface of the mold, and mold the main part containing the semiconductor pellets and the outer surface of the heat sink with a resin material. After coating, in a manufacturing method in which the tie bars of the lead frame are cut to separate individual semiconductor devices, the middle part between the exposed part of the heat sink and the pellet placement part is cut from the surface side of the heat sink. The feature is that the exposed part and the pellet loading part are electrically separated.
作用
上記した本発明方法により製造される絶縁型半導体装置
においては、切断両端部が樹脂モールド外表面（こ露出
する状態となる残留タイバー即ちヒートシンク部分の露
呈部が、高電位となるヒートシンク部分とは完全に分断
されている状態となっているから、タイバーの両端露出
部分の電位は低く、従って、作業者がその露出部分に触
っても危険性がなく、また、その露出部分と半導体装置
下方の放熱板との間での放電も全く生じないよう１ζな
った。In the insulated semiconductor device manufactured by the method of the present invention described above, both cut ends are exposed on the outer surface of the resin mold (remaining tie bars that are exposed, that is, the exposed portion of the heat sink portion is the heat sink portion that has a high potential). Since the tie bar is completely separated, the potential of the exposed parts at both ends of the tie bar is low, so there is no danger even if a worker touches the exposed part, and there is no danger between the exposed part and the lower part of the semiconductor device. 1ζ so that no discharge occurs between the heat sink and the heat sink.
実施例
以下、本発明による絶縁型半導体装置の製造方法の実施
例を図面（第１図ないし第６図）１こ基づいて説明する
。EXAMPLE Hereinafter, an example of the method for manufacturing an insulated semiconductor device according to the present invention will be described with reference to the drawings (FIGS. 1 to 6).
先ず、第１図中実線で示すように、複数のリード部分１
・・・とヒートシンク部分２とタイバ一部分８とが一体
構成とされたリードフレーム４を、銅。First, as shown by solid lines in FIG.
. . . The lead frame 4 in which the heat sink portion 2 and the tie bar portion 8 are integrated is made of copper.
ニッケル、軟鋼などの材料に圧延およびプレス等を施す
ことにより製作する。そして、第１図中二点鎖線で示す
ように、前記ヒートシンク部分２ｋ。Manufactured by rolling, pressing, etc. from materials such as nickel and mild steel. And, as shown by the two-dot chain line in FIG. 1, the heat sink portion 2k.
に半導体ベレット５を載置固定した後、第１図中点線で
示すように、前記各リード部分１・・・の端部とペレッ
ト６の電極とをワイヤボンディング等（こより電気的に
接続する。After mounting and fixing the semiconductor pellet 5 on the semiconductor pellet 5, as shown by the dotted lines in FIG.
次に、第２図（イ）、（ロ）１こ示すように、前記のよ
うにワイヤボンディングを施したリード部分１・・・の
端部とペレット５とヒートシンク部分２とタイバ一部分
８とを包囲するように樹脂モールド６を施した後、前記
ヒートシンク部分２の露呈部即ちタイバ一部分８の樹脂
モールド部分６から外方への突出部分を、樹脂モールド
部分６の外表面においてと方から切断して除去し、個々
の半導体装置に分離する。なお、７は固定ネジ挿通用の
孔である。Next, as shown in FIGS. 2(A) and 2(B), the ends of the lead portions 1, which have been wire-bonded as described above, the pellets 5, the heat sink portions 2, and the tie bar portions 8 are bonded together. After enclosing the resin mold 6, the exposed portion of the heat sink portion 2, that is, the portion of the tie bar portion 8 that protrudes outward from the resin mold portion 6, is cut from the outer surface of the resin mold portion 6. and separate the semiconductor devices into individual semiconductor devices. Note that 7 is a hole for inserting a fixing screw.
そして、次に第８図０）、（ロ）に示すように、樹脂モ
ールド６内１こ残留するタイバ一部分８とペレ・ノド載
置部の中間部をヒートシンク部分２の裏面側の樹脂モー
ルド部分の一部まで切り込み、両者２゜８の電気的な連
結を完全に断ち切るように、グイサー等によって樹脂モ
ールド６の上面から所定深さだけ溝状の切り込み８を形
成する。このようにすれば、ヒートシンク部分２に比較
的高電位が印加された場合でも、それに拘わり無くタイ
バ一部分８の電位はゼロ乃至低電位のままである。従っ
て、樹脂モールド６の両側部外表面に露出するタイバ一
部分８の両切断端面８ａ、８ａと半導体装置下方に位置
する放熱板（図示せず）との間で放電（絶縁破壊）が生
じることは無く、また、電子回路装置の点検時に、作業
者が前記タイバ一部分８の両切断端ｉ８ａ、８ａを蝕っ
ても感電の危険性を除去できろ。なお、前記溝状切り込
み８はごく幅狭なものであるから、この中に指が入り込
んでｌｍｍＩＣするということも生じない。Next, as shown in FIG. 8 0) and (b), the middle part of the tie bar portion 8 remaining in the resin mold 6 and the plate/throat placement part is replaced with the resin mold part on the back side of the heat sink part 2. A groove-shaped cut 8 is formed by a predetermined depth from the upper surface of the resin mold 6 using a tool such as a cutter so as to completely cut off the electrical connection between the two. In this way, even if a relatively high potential is applied to the heat sink portion 2, the potential of the tie bar portion 8 remains at zero or low potential regardless. Therefore, it is unlikely that discharge (dielectric breakdown) will occur between the cut end surfaces 8a, 8a of the tie bar portions 8 exposed on the outer surfaces of both sides of the resin mold 6 and the heat sink (not shown) located below the semiconductor device. Moreover, even if a worker damages both cut ends i8a, 8a of the tie bar portion 8 when inspecting the electronic circuit device, the risk of electric shock can be eliminated. Note that, since the groove-like cut 8 is extremely narrow, there is no possibility that a finger will get stuck in it and perform lmmIC.
第４図は別の実施例を示し、前記リードフレーム４１こ
おけるヒートシンク部分２とタイバ一部分３との連結部
分を薄肉に形成しておくことにより、前記溝状切り込み
８を形成する際のダイシング作業を容易に行なえるよう
にしたものである。なお、グイサーにより形成される切
り込み８はごく幅狭なものであるから、同第４図中二点
鎖線Ｐ、Ｑで示すようｌζ、２箇所またはそれ以上の箇
所において切り込み８を形成すれば、より一層確実な電
気的絶縁を保障し得る。FIG. 4 shows another embodiment, in which the connecting portion between the heat sink portion 2 and the tie bar portion 3 in the lead frame 41 is formed thin, so that the dicing operation when forming the groove-like cut 8 is performed. It is designed to be easily performed. Incidentally, since the cut 8 formed by the cutter is very narrow, if the cut 8 is formed at two or more locations lζ, as shown by two-dot chain lines P and Q in FIG. Even more reliable electrical insulation can be ensured.
第５図（イ）、（ロ）はまた別の実施例を示し、前記溝
状切り込み８に代えて、ドリル等により、前記ヒートシ
ンク部分２とタイバ一部分８０電気的連結を断つに足る
比較的大きな穴９，９を樹脂モールド６の上面から所定
深さまで穿設したものである。FIGS. 5(a) and 5(b) show another embodiment, in which instead of the groove-like cut 8, a relatively large cut is made by a drill or the like to cut the electrical connection between the heat sink portion 2 and the tie bar portion 80. Holes 9, 9 are bored from the upper surface of the resin mold 6 to a predetermined depth.
このようにする場合には、第６図に示すように、リード
フレーム４ｔとおけるヒートシンク部分２とタイバ一部
分８との連結部分を１ｆＭ所にしておけば、前記絶縁用
の穴９は１箇設けるだけで済む。In this case, as shown in FIG. 6, if the connecting portion between the heat sink portion 2 and the tie bar portion 8 in the lead frame 4t is set at 1 fM, one insulating hole 9 is provided. That's all you need.
また、同ｊＩ６図に示すように、ヒートシンク部分２と
タイバ一部分８との連結部分にドリル先端位置決め用の
小孔１０を設けておけば、前記絶縁用の穴９の穿設作業
を容易に行なうことができる。Furthermore, as shown in Figure jI6, if a small hole 10 for positioning the tip of the drill is provided at the connecting portion between the heat sink portion 2 and the tie bar portion 8, the work of drilling the insulation hole 9 can be easily performed. be able to.
また、特にこのように比較的大きな絶縁用の六〇を設け
る場合には、その穴９を樹脂等により後で埋め戻してお
くのが望ましい。Further, especially when providing such a relatively large insulating hole 9, it is desirable to backfill the hole 9 with resin or the like later.
尚、本発明は上記実施例にのみ限定されろことなく、例
えば、ヒートシンク部分の露出部とペレット載置部の分
離はリードフレーム状態で実施してもよい。It should be noted that the present invention is not limited to the above-mentioned embodiments; for example, the exposed portion of the heat sink portion and the pellet placement portion may be separated from each other in a lead frame state.
効果
以上のように、本発明方法によれば、樹脂モールド内に
残留するタイバ一部分を、比較的高電位が印加されるヒ
ートシンク部分から完全に切り離しておくようにしたた
め、樹脂モールド外表面に露出するタイバ一部分の端面
と放熱板との間の放電や、同タイバ一部分の端面での感
電等を確実に防止することができるようになったのであ
る。Effects As described above, according to the method of the present invention, the portion of the tie bar remaining inside the resin mold is completely separated from the heat sink portion to which a relatively high potential is applied, so that it is exposed to the outer surface of the resin mold. It is now possible to reliably prevent electrical discharge between the end face of a portion of the tie bar and the heat sink, as well as electric shocks at the end face of the tie bar portion.
第１図ないし第６図は本発明に係る絶縁型半導体装置の
製造方法の実施例を説明するためのものであって、第１
図はリードフレームおよびペレットの載置状態ならびに
ワイヤボンディング状態を示す斜視図、第２図（イ）は
樹脂モールド成型状態を示す斜視図、第２図（ロ）は第
２図（イ）の横断面図、第８図（イ）は溝状切り込み形
成状態を示す斜視図、第８図（ロ）は第８図（イ）の横
断面図、第４図は別の実施例に係る要部の横断面図、第
６図（イ）はまた別の実施例の斜視図、第５図（ロ）は
第５図（イ）の横断面図、そして、第６図は更１ζ別の
実施例（こ係る要部の斜視図である。
また、第７図（イ）、（ロ）は従来方法により製造され
た半導体装置を示し、第７図（イ）は横断面図、第７図
（ロ）は第７図（イ）のＸ−Ｘ線に沿う断面図である。
１・・・リード、２・・・放熱板（ヒートシンク）、８
・・・タイバー、４・・・リードフレーム、５・・・半
導体ペレット、６・・・樹脂モールド部分、８，９・・
・切断部。
第１図
第２図
第３図
（イ）
（ロ）
ｔＪ４図1 to 6 are for explaining an embodiment of the method for manufacturing an insulated semiconductor device according to the present invention, and FIG.
The figure is a perspective view showing the lead frame and pellet loading state and wire bonding state, Fig. 2 (A) is a perspective view showing the resin molding state, and Fig. 2 (B) is a cross-sectional view of Fig. 2 (A). 8(a) is a perspective view showing the groove-like cut formation state, FIG. 8(b) is a cross-sectional view of FIG. 8(a), and FIG. 4 is a main part according to another embodiment. 6(A) is a perspective view of another embodiment, FIG. 5(B) is a cross sectional view of FIG. 5(A), and FIG. 6 is a further 1ζ different embodiment. Example (This is a perspective view of the main part. Also, FIGS. 7(A) and 7(B) show a semiconductor device manufactured by the conventional method, FIG. 7(A) is a cross-sectional view, and FIG. (B) is a sectional view taken along the line X-X in FIG. 7(A). 1... Lead, 2... Heat sink (heat sink), 8
... Tie bar, 4... Lead frame, 5... Semiconductor pellet, 6... Resin mold part, 8, 9...
- Cutting section. Figure 1 Figure 2 Figure 3 (a) (b) tJ4 diagram
Claims (1)
本のリードを同一方向に導出しかつ複数組のリードをタ
イバーにて連結したリードフレームの放熱板表面上にマ
ウントした半導体ペレットの電極とリードとを電気的に
接続し、樹脂モールド金型にて放熱板の外周面が金型内
面と離隔するようにリード中間部及び放熱板の一部を挾
持し半導体ペレットを含む主要部並びに放熱板の外面を
樹脂材にて被覆した後、リードフレームのタイバーを切
断して個々の半導体装置に分離する製造方法において、
上記放熱板の露呈部とペレット載置部の中間部を放熱板
表面側より切断して放熱板の露呈部とペレット載置部と
を電気的に分離したことを特徴とする絶縁型半導体装置
の製造方法。Electrodes and leads of semiconductor pellets mounted on the surface of the heat sink of a lead frame in which multiple leads including at least one lead connected to the heat sink are led out in the same direction and multiple sets of leads are connected with tie bars. The intermediate part of the lead and a part of the heat sink are sandwiched in a resin mold so that the outer peripheral surface of the heat sink is separated from the inner surface of the mold, and the main part including the semiconductor pellet and the heat sink are separated. In a manufacturing method in which the outer surface is coated with a resin material, the tie bars of the lead frame are cut to separate the semiconductor devices into individual semiconductor devices.
An insulated semiconductor device characterized in that the intermediate portion between the exposed portion of the heat sink and the pellet placement portion is cut from the surface side of the heat sink to electrically isolate the exposed portion of the heat sink and the pellet placement portion. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16700384A JPS6144450A (en) | 1984-08-08 | 1984-08-08 | Manufacture of insulation semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16700384A JPS6144450A (en) | 1984-08-08 | 1984-08-08 | Manufacture of insulation semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6144450A true JPS6144450A (en) | 1986-03-04 |
Family
ID=15841573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16700384A Pending JPS6144450A (en) | 1984-08-08 | 1984-08-08 | Manufacture of insulation semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144450A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0497352U (en) * | 1990-07-26 | 1992-08-24 | ||
| JP2007320747A (en) * | 2006-06-02 | 2007-12-13 | Kataoka Mach Co Ltd | Suction roller |
| JP2008114981A (en) * | 2006-11-06 | 2008-05-22 | Kawakami Sangyo Co Ltd | Breathable roll for conveying molten resin sheet |
-
1984
- 1984-08-08 JP JP16700384A patent/JPS6144450A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0497352U (en) * | 1990-07-26 | 1992-08-24 | ||
| JP2007320747A (en) * | 2006-06-02 | 2007-12-13 | Kataoka Mach Co Ltd | Suction roller |
| JP2008114981A (en) * | 2006-11-06 | 2008-05-22 | Kawakami Sangyo Co Ltd | Breathable roll for conveying molten resin sheet |
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