JPS6144139B2 - - Google Patents
Info
- Publication number
- JPS6144139B2 JPS6144139B2 JP14151481A JP14151481A JPS6144139B2 JP S6144139 B2 JPS6144139 B2 JP S6144139B2 JP 14151481 A JP14151481 A JP 14151481A JP 14151481 A JP14151481 A JP 14151481A JP S6144139 B2 JPS6144139 B2 JP S6144139B2
- Authority
- JP
- Japan
- Prior art keywords
- foil
- aluminum
- etching
- ppm
- soft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011888 foil Substances 0.000 claims description 37
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 18
- 239000000126 substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
本発明は、タリウム(Tl)を含有する新規な
電解コンデンサ用硬質アルミニウム合金箔及びア
ルミニウム箔の表層部分にTlを偏在させた新し
い構成の電解コンデンサ用軟質特殊アルミニウム
箔に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel hard aluminum alloy foil for electrolytic capacitors containing thallium (Tl) and a soft special aluminum foil for electrolytic capacitors having a new configuration in which Tl is unevenly distributed in the surface layer of the aluminum foil. .
尚、本明細書において“%”及び“ppm”と
あるのは、特に規定しない限り重量基準で示すも
のとする。 In this specification, "%" and "ppm" are expressed on a weight basis unless otherwise specified.
電解コンデンサに使用されるアルミニウム箔と
しては、エツチング特性に優れ、エツチング後の
表面積拡大率が大きく且つ化成後のもれ電流が無
視し得る程度に小さいことが必要である。従来こ
の様な性質を有するアルミニウム箔を得る為に、
高純度アルミニウム中に適当な合金成分を加える
ことが提案されているが、いずれも種々の点で充
分満足すべきものであるとはいい難い。本発明者
は、公知のアルミニウム合金箔の問題点に留意し
つつ種々研究を重ねた結果、Tlを特定量含有す
る純度99.9%以上のアルミニウム軟質箔が、エツ
チング特性、静電容量、化成特性等の点で優れた
性質を示すことを見出した。更に本発明者の研究
によれば、特許請求の範囲第1項に記載の如き
Tl含有アルミニウム合金箔を焼鈍処理する場合
には、合金成分たるTlがアルミニウム箔の表層
部分に選択的に移行して、表層部分にTlを高濃
度に含有する極めて特異な構成の軟質アルミニウ
ム箔が得られ、これが電解コンデンサ用としてよ
り一層優れた性質を発揮することが見出された。
即ち、本発明は、Tl含有量(x)が0.1ppm<
x≦0.7ppmの範囲内にあるアルミニウム純度
99.9%以上の電解コンデンサ用硬質アルミニウム
合金箔(以下これを本願第1発明という)及び
Tl含有量(X)が0.1ppm<x≦0.7ppmの範囲内
にあり且つTlが表層部分に高濃度に偏在してい
るアルミニウム純度99.9%以上の電解コンデンサ
用軟質アルミニウム箔(以下これを本願第2発明
という)を提供するものである。 The aluminum foil used in electrolytic capacitors must have excellent etching properties, a large surface area expansion rate after etching, and a negligible leakage current after anodization. Conventionally, in order to obtain aluminum foil with such properties,
Although it has been proposed to add appropriate alloying components to high-purity aluminum, none of these methods can be said to be fully satisfactory in various respects. As a result of various studies while paying attention to the problems of known aluminum alloy foils, the present inventor found that a soft aluminum foil with a purity of 99.9% or more containing a specific amount of Tl has excellent etching properties, capacitance, chemical formation properties, etc. It has been found that this material exhibits excellent properties in terms of. Furthermore, according to the research of the present inventor, as described in claim 1,
When an aluminum alloy foil containing Tl is annealed, the alloying component Tl selectively migrates to the surface layer of the aluminum foil, resulting in a soft aluminum foil with a very unique structure containing a high concentration of Tl in the surface layer. It has been found that this product exhibits even more excellent properties for use in electrolytic capacitors.
That is, in the present invention, the Tl content (x) is 0.1 ppm<
Aluminum purity within the range of x≦0.7ppm
99.9% or more hard aluminum alloy foil for electrolytic capacitors (hereinafter referred to as the first invention) and
A soft aluminum foil for electrolytic capacitors with an aluminum purity of 99.9% or more, in which the Tl content (X) is within the range of 0.1 ppm < 2 invention).
本発明においては、アルミニウム純度を99.9%
以上とするとともに、エツチング特性、静電容
量、化成特性等を総合的に勘案してTl含有量
(x)を0.1ppm<x≦0.7ppmの範囲内、より好
ましくは0.2〜0.4ppmとする。Tl含有量が
0.1ppm以下の場合には、均一なエツチングが得
られにくい欠点があり、一方0.7ppmを上回ると
静電容量、ピツト密度及び化成特性が低下する傾
向がある。 In the present invention, the aluminum purity is 99.9%.
In addition to the above, the Tl content (x) is set within the range of 0.1 ppm<x≦0.7 ppm, more preferably 0.2 to 0.4 ppm, taking etching characteristics, capacitance, chemical formation characteristics, etc. into consideration comprehensively. Tl content is
If it is less than 0.1 ppm, there is a drawback that it is difficult to obtain uniform etching, while if it exceeds 0.7 ppm, capacitance, pit density, and chemical formation properties tend to deteriorate.
本願第1発明の硬質アルミエウム合金箔は、純
度99.9%以上のアルミニウム鋳造時にTl含有量
(x)が0.1ppm<x≦0.7ppmとなる様に添加
し、以後常法の製箔工程により得られる。 The hard aluminum alloy foil of the first invention of the present application is obtained by adding Tl content (x) such that the Tl content (x) becomes 0.1ppm<x≦0.7ppm when casting aluminum with a purity of 99.9% or more, and then performing a conventional foil manufacturing process. .
本願第2発明の軟質アルミニウム箔は、本願第
1発明のアルミニウム合金箔を更に常法に従つ
て、例えば450℃以上の非酸化性雰囲気又は真空
下に焼鈍することにより得られる。得られた軟質
アルミニウム箔においては、Tlが表層部分に高
濃度に偏在しているので、その表面酸化皮膜は非
常に欠陥の多いものとなつているものと思われ
る。従つて、エツチング時、Cl-イオンの浸入は
容易であり且つエツチング初期の段階に多数のピ
ツトが形成される。エツチングの進行に伴つて
Tlを含有する表層部分は溶出するが、一旦ピツ
トが形成されると、その後は孔蝕性が持続される
ため、ピツトは高純度アルミニウムからなる内層
部分は伸長し続け、表面積拡大率が大きくなる。
表層部分の溶出後は、通常の高純度アルミニウム
箔のエツチングと同様であるから、腐蝕減量は増
大しない。又、得られるエツチド箔は、ピツト密
度が高いので、より高容量の電解コンデンサを与
え、化成特性にも更に優れたものとなる。更に、
エツチド箔のL値が高いことから明らかな如く、
本願第2発明のアルミニウム軟質箔は、エツチン
グ性(エツチング効率)が良好である。更に又、
Tlの働きにより結晶粒の粗大化も有効に防止さ
れる。 The soft aluminum foil of the second invention of the present application can be obtained by further annealing the aluminum alloy foil of the first invention of the present application in a conventional manner, for example, in a non-oxidizing atmosphere at 450° C. or higher or in a vacuum. In the obtained soft aluminum foil, since Tl is unevenly distributed in the surface layer at a high concentration, the surface oxide film is considered to be extremely defective. Therefore, during etching, Cl - ions easily penetrate and a large number of pits are formed in the early stage of etching. As etching progresses
The surface layer containing Tl is eluted, but once pits are formed, the pitting properties continue, so the inner layer made of high-purity aluminum continues to elongate, increasing the surface area expansion rate. .
After the surface layer portion is eluted, the process is similar to etching of ordinary high-purity aluminum foil, so the corrosion loss does not increase. Furthermore, the resulting etched foil has a high pit density, so it provides an electrolytic capacitor with higher capacity and even better chemical properties. Furthermore,
As is clear from the high L value of etched foil,
The aluminum soft foil of the second invention of the present application has good etching properties (etching efficiency). Furthermore,
Coarsening of crystal grains is also effectively prevented by the action of Tl.
実施例 1
鋳造時に99.99%AlにTlを0〜0.7ppm添加し、
常法に従つて冷間圧延により0.1mmの硬質合金箔
とした。Tlを含有する硬質合金箔においては、
全体にわたりTlが均一に分布していることが確
認された。次いで、これ等の硬質箔を真空下550
℃で3時間焼鈍して軟質箔とした。Tlを含有す
る軟質箔においては、Tlが表層部分に高濃度に
偏在していることが確認された。Example 1 0 to 0.7 ppm of Tl was added to 99.99% Al during casting,
A 0.1 mm hard alloy foil was obtained by cold rolling according to a conventional method. In hard alloy foil containing Tl,
It was confirmed that Tl was uniformly distributed throughout. These hard foils are then heated under vacuum for 550°C.
It was annealed at ℃ for 3 hours to obtain a soft foil. In the soft foil containing Tl, it was confirmed that Tl was unevenly distributed in the surface layer at a high concentration.
(イ) 次いで、HCl12.5vol%を含むエツチング浴に
得られた軟質箔を浸漬し、浴温80℃、直流電流
密度30A/dm2の条件下に所定時間エツチング
を行なう。Tl添加量とエツチング性との関係
を各エツチング時間につき調べた結果を第1図
として示す。第1〜3図において曲線Aは、エ
ツチング時間30秒、曲線Bは90秒、曲線Cは
180秒の場合の結果を夫々示す。(a) Next, the obtained soft foil is immersed in an etching bath containing 12.5 vol % of HCl, and etched for a predetermined period of time at a bath temperature of 80° C. and a DC current density of 30 A/dm 2 . FIG. 1 shows the results of examining the relationship between the amount of Tl added and etching properties for each etching time. In Figures 1 to 3, curve A has an etching time of 30 seconds, curve B has an etching time of 90 seconds, and curve C has an etching time of 30 seconds.
The results for the case of 180 seconds are shown.
尚、第1図において、L値(0゜−45゜)と
は45゜拡散方式(0゜−45゜方式)で測定され
るエツチド箔表面の明度(白色度)を意味し、
これは、須賀試験機(株)製の直読測色色差コンピ
ユーター(型式CDE−SCH−4A)により測定
されたものである。該L値が低い場合には、未
エツチング部分が多いことを示し、一方高すぎ
る場合には、表面溶解が激し過ぎてピツトが形
成され難い。第1図においては、Tl添加量が
0.3〜0.4ppmの範囲で最良の結果が得られた。 In Fig. 1, the L value (0°-45°) means the brightness (whiteness) of the etched foil surface measured by the 45° diffusion method (0°-45° method).
This was measured using a direct reading color measurement color difference computer (model CDE-SCH-4A) manufactured by Suga Test Instruments Co., Ltd. If the L value is low, it indicates that there are many unetched areas, while if it is too high, surface dissolution is too intense and pits are difficult to form. In Figure 1, the amount of Tl added is
Best results were obtained in the range of 0.3-0.4 ppm.
(ロ) 上記(イ)で得られた各エツチド箔のTl添加量
とピツト数との関係を各エツチング時間につき
調べた結果を第2図として示す。Tl添加量が
少な過ぎる場合には皮膜欠陥が少なく、ピツテ
イング開始点が少ないのに対し、Tl添加量が
多過ぎると皮膜欠陥が多過ぎて表面が溶解さ
れ、箔の厚さ方向にピツトが伸び難くなる。第
2図においては、0.2〜0.4ppmの範囲で最良の
結果が得られた。(b) The relationship between the amount of Tl added and the number of pits in each of the etched foils obtained in (a) above was investigated for each etching time, and the results are shown in FIG. If the amount of Tl added is too small, there will be few film defects and pitting initiation points, whereas if the amount of Tl added is too large, there will be too many film defects and the surface will be dissolved, and pits will extend in the thickness direction of the foil. It becomes difficult. In FIG. 2, the best results were obtained in the range of 0.2 to 0.4 ppm.
(ハ) 上記(イ)で得られた90秒エツチド箔を10V化成
した場合のTl添加量と静電容量との関係を第
3図として示す。尚、30秒エツチド箔及び180
秒エツチド箔の場合にも、90秒エツチド箔と同
様の傾向を示すので、これ等の結果は図示しな
い。(c) Figure 3 shows the relationship between the amount of Tl added and the capacitance when the 90 second etched foil obtained in (a) above was subjected to 10V chemical conversion. In addition, 30 seconds etched foil and 180
The second-etched foil also shows the same tendency as the 90-second etched foil, so these results are not shown.
Tl添加量0.2〜0.4ppmの範囲で最良の結果が
得られている。 The best results have been obtained with Tl addition in the range of 0.2 to 0.4 ppm.
第1〜3図は、本発明によるアルミニウム箔の
物性を示すグラフである。
1 to 3 are graphs showing the physical properties of aluminum foil according to the present invention.
Claims (1)
0.7ppmの範囲内にあるアルミニウム純度99.9%
以上の電解コンデンサ用硬質アルミニウム合金
箔。 2 タリウム含有量(x)が0.1ppm<x≦
0.7ppmの範囲内にあり且つタリウムが表層部分
に高濃度に偏在しているアルミニウム純度99.9%
以上の電解コンデンサ用軟質アルミニウム箔。[Claims] 1. Thallium content (x) is 0.1ppm<x≦
Aluminum purity 99.9% within 0.7ppm
Hard aluminum alloy foil for electrolytic capacitors. 2 Thallium content (x) is 0.1ppm<x≦
Aluminum purity 99.9% with a concentration of 0.7ppm and thallium unevenly distributed in the surface layer.
Soft aluminum foil for electrolytic capacitors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14151481A JPS5842746A (en) | 1981-09-07 | 1981-09-07 | Aluminum foil for electrolytic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14151481A JPS5842746A (en) | 1981-09-07 | 1981-09-07 | Aluminum foil for electrolytic capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5842746A JPS5842746A (en) | 1983-03-12 |
JPS6144139B2 true JPS6144139B2 (en) | 1986-10-01 |
Family
ID=15293729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14151481A Granted JPS5842746A (en) | 1981-09-07 | 1981-09-07 | Aluminum foil for electrolytic capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5842746A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007247023A (en) | 2006-03-17 | 2007-09-27 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
JP2012255213A (en) * | 2012-07-25 | 2012-12-27 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
JP2014168086A (en) * | 2014-04-17 | 2014-09-11 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03253534A (en) * | 1990-03-01 | 1991-11-12 | Sumitomo Light Metal Ind Ltd | Aluminum alloy foil for electrolytic capacitor |
WO2006098445A1 (en) * | 2005-03-17 | 2006-09-21 | Showa Denko K.K. | Process for producing aluminum material for electrolytic capacitor electrode, aluminum material for electrolytic capacitor electrode, process for producing electrolytic capacitor electrode material, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor |
-
1981
- 1981-09-07 JP JP14151481A patent/JPS5842746A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007247023A (en) | 2006-03-17 | 2007-09-27 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
JP2012255213A (en) * | 2012-07-25 | 2012-12-27 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
JP2014168086A (en) * | 2014-04-17 | 2014-09-11 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
Also Published As
Publication number | Publication date |
---|---|
JPS5842746A (en) | 1983-03-12 |
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