JPS6143863B2 - - Google Patents
Info
- Publication number
- JPS6143863B2 JPS6143863B2 JP53118225A JP11822578A JPS6143863B2 JP S6143863 B2 JPS6143863 B2 JP S6143863B2 JP 53118225 A JP53118225 A JP 53118225A JP 11822578 A JP11822578 A JP 11822578A JP S6143863 B2 JPS6143863 B2 JP S6143863B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- cathode
- gate
- auxiliary
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 206010034960 Photophobia Diseases 0.000 description 3
- 208000013469 light sensitivity Diseases 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11822578A JPS5544757A (en) | 1978-09-25 | 1978-09-25 | Photo-thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11822578A JPS5544757A (en) | 1978-09-25 | 1978-09-25 | Photo-thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5544757A JPS5544757A (en) | 1980-03-29 |
| JPS6143863B2 true JPS6143863B2 (en, 2012) | 1986-09-30 |
Family
ID=14731312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11822578A Granted JPS5544757A (en) | 1978-09-25 | 1978-09-25 | Photo-thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5544757A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5593262A (en) * | 1979-01-05 | 1980-07-15 | Nec Corp | Semiconductor device |
-
1978
- 1978-09-25 JP JP11822578A patent/JPS5544757A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5544757A (en) | 1980-03-29 |
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