JPS6143647B2 - - Google Patents

Info

Publication number
JPS6143647B2
JPS6143647B2 JP56091379A JP9137981A JPS6143647B2 JP S6143647 B2 JPS6143647 B2 JP S6143647B2 JP 56091379 A JP56091379 A JP 56091379A JP 9137981 A JP9137981 A JP 9137981A JP S6143647 B2 JPS6143647 B2 JP S6143647B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
surface layer
substrate
quasi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56091379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57206838A (en
Inventor
Hiroshi Takigawa
Kunihiro Tanigawa
Mitsuo Yoshikawa
Michiharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56091379A priority Critical patent/JPS57206838A/ja
Publication of JPS57206838A publication Critical patent/JPS57206838A/ja
Publication of JPS6143647B2 publication Critical patent/JPS6143647B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP56091379A 1981-06-12 1981-06-12 Detection element for infrared rays Granted JPS57206838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56091379A JPS57206838A (en) 1981-06-12 1981-06-12 Detection element for infrared rays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56091379A JPS57206838A (en) 1981-06-12 1981-06-12 Detection element for infrared rays

Publications (2)

Publication Number Publication Date
JPS57206838A JPS57206838A (en) 1982-12-18
JPS6143647B2 true JPS6143647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-09-29

Family

ID=14024730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56091379A Granted JPS57206838A (en) 1981-06-12 1981-06-12 Detection element for infrared rays

Country Status (1)

Country Link
JP (1) JPS57206838A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8325935D0 (en) * 1983-09-28 1983-11-02 Secr Defence Thermal detector
US5451786A (en) * 1994-04-19 1995-09-19 Santa Barbara Research Center Uncooled mis capacitor for infrared detection

Also Published As

Publication number Publication date
JPS57206838A (en) 1982-12-18

Similar Documents

Publication Publication Date Title
US4679063A (en) Infra red detectors
US4236829A (en) Solid-state image sensor
US5604364A (en) Photoelectric converter with vertical output lines
US5880510A (en) Graded layer passivation of group II-VI infrared photodetectors
GB2372630A (en) Epitaxial passivation of group 2-6 infrared photodetectors
US4980736A (en) Electric conversion device
JPH0447983B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0429372A (ja) 半導体光検出装置
JPH038117B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2959460B2 (ja) 固体撮像装置
JPS646547B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5869851A (en) Photoelectric conversion device with graded band gap and carrier concentration
JPS6143647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0828493B2 (ja) 光検知器
JPH04246860A (ja) 光電変換装置
US4831428A (en) Infrared ray detection device
JPS605076B2 (ja) 半導体受光素子
US5182217A (en) Method of fabricating a trapping-mode
US4914495A (en) Photodetector with player covered by N layer
Elliott Photoconductive and non-equilibrium devices in HgCdTe and related alloys
US5079610A (en) Structure and method of fabricating a trapping-mode
JPH07105522B2 (ja) 半導体装置
US5004698A (en) Method of making photodetector with P layer covered by N layer
JPS61187267A (ja) 固体撮像装置
JP2513755B2 (ja) 赤外線撮像装置