JPS6142851B2 - - Google Patents
Info
- Publication number
- JPS6142851B2 JPS6142851B2 JP9122479A JP9122479A JPS6142851B2 JP S6142851 B2 JPS6142851 B2 JP S6142851B2 JP 9122479 A JP9122479 A JP 9122479A JP 9122479 A JP9122479 A JP 9122479A JP S6142851 B2 JPS6142851 B2 JP S6142851B2
- Authority
- JP
- Japan
- Prior art keywords
- soft
- ray
- layer
- pattern
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001681 protective effect Effects 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004952 Polyamide Substances 0.000 description 4
- 229920002647 polyamide Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は、Ｘ線露光用転写マスク、特にＸ線を
用いて微細パターンを転写する技術に用られるＸ
線露光用転写マスクに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a transfer mask for X-ray exposure, particularly an X-ray mask used in a technology for transferring fine patterns using X-rays.
This invention relates to a transfer mask for line exposure.
従来より用いられているＸ線露光露光用転写マ
スクは、第１図に断面図でした構造のものが使用
されている。すなわち同図において、軟Ｘ線の吸
収の極めて強い軟Ｘ線吸収層１と、この軟Ｘ線吸
収層１を支持するのに充分な範囲内に薄膜化して
Ｘ線の減衰率を小さくさせた軟Ｘ線透過層２と、
この軟Ｘ線吸収層１と軟Ｘ線透過層２とから形成
されるマスクに所要の機械的強度を得るための支
持体３とによつて主構成されている。 The transfer mask for X-ray exposure that has been used in the past has the structure shown in the cross-sectional view in FIG. In other words, in the figure, there is a soft X-ray absorption layer 1 that has an extremely strong absorption of soft X-rays, and the film is made thin enough to support this soft X-ray absorption layer 1 to reduce the attenuation rate of X-rays. a soft X-ray transparent layer 2;
The main structure includes a support 3 for providing the required mechanical strength to the mask formed from the soft X-ray absorbing layer 1 and the soft X-ray transmitting layer 2.
このように構成されたＸ線露光用転写マスクに
おいて、その軟Ｘ線吸収１の形成方方としては、
軟Ｘ線透過層２の上面にレジストを塗布した後、
所望のパターンと相補の関係にあるレジストパタ
ーンを形成し、しかる後、金、白金などのＸ線の
吸収率の高い金属を被着させ、リフトオフ法等に
より所望のパターンを形成させる。次に軟Ｘ線透
過２の裏面にエツチング用マスクパターンを形成
させ、例えばシリコン基板を選択エツチング除去
し、支持体３を形成していた。 In the transfer mask for X-ray exposure constructed in this way, the method of forming the soft X-ray absorption 1 is as follows.
After applying a resist to the upper surface of the soft X-ray transparent layer 2,
A resist pattern complementary to the desired pattern is formed, and then a metal having a high X-ray absorption rate, such as gold or platinum, is deposited, and the desired pattern is formed by a lift-off method or the like. Next, an etching mask pattern was formed on the back surface of the soft X-ray transmitter 2, and the silicon substrate, for example, was selectively etched away to form the support 3.
しかしながら、上記構成によるＸ線露光用転写
マスクは、断面でみると、軟Ｘ線吸収層１が軟Ｘ
線透過層２上に露出して形成されているために、
ウエハなどに転写した際には、軟Ｘ線吸収層１が
損傷を受け易い欠点を有していた。また、軟Ｘ線
吸収１の材質としては、通常、金が用いられる
が、金は物理的接触して極めて弱く、容易に損傷
を受けてしまうという欠点を有していた。さら
に、他の硬い金属を使用する場合も、エツチング
精度を良くするため、膜厚を薄くする場合が多い
ので、物理的接触による損傷は免れなかつた。 However, in the transfer mask for X-ray exposure with the above configuration, when viewed in cross section, the soft X-ray absorption layer 1 is
Since it is formed exposed on the line-transmitting layer 2,
When transferred to a wafer or the like, the soft X-ray absorbing layer 1 has the disadvantage of being easily damaged. Further, gold is usually used as the material for the soft X-ray absorber 1, but gold has the disadvantage that it is extremely weak when it comes into physical contact and is easily damaged. Furthermore, even when other hard metals are used, the film thickness is often made thinner in order to improve etching accuracy, so damage due to physical contact cannot be avoided.
このような欠点を解決したものとしては、軟Ｘ
線透過層２の全面にわたつて軟Ｘ線に対して透明
な物質を被着し、軟Ｘ線吸収層１を保護する方法
が提案されているが、Ｘ線の減衰が大きくなるな
どの欠点を有していた。 Soft X
A method has been proposed to protect the soft X-ray absorbing layer 1 by covering the entire surface of the radiation transmitting layer 2 with a material that is transparent to soft X-rays, but this method has drawbacks such as increased attenuation of X-rays. It had
したがつて本発明は、上記従来の欠点を除去す
るために軟Ｘ線透過層を凸部および凹部を有する
構造に形成するとともに、前記軟Ｘ線透過層の凸
部に軟Ｘ線吸収層パターンを被着し、さらにＸ線
に対して透明な保護膜を形成したものである。以
下図面を用いて本発明によるＸ線露光露光用転写
マスクについて詳細に説明する。 Therefore, in order to eliminate the above-mentioned conventional drawbacks, the present invention forms a soft X-ray transparent layer in a structure having convex portions and concave portions, and also forms a soft X-ray absorbing layer pattern in the convex portions of the soft X-ray transparent layer. A protective film transparent to X-rays is formed. The transfer mask for X-ray exposure according to the present invention will be described in detail below with reference to the drawings.
第２図は本発明によるＸ線露光用転写マクの一
例を示す要部断面図であり、第１図と同記号は一
要素となるのでその説明は省略する。同図におい
て、軟Ｘ線透過層２の上面には、所望のマスクパ
ターンの形状に対応して凸部２ａが一体的に形成
されている。そして、このマスクパターン形状の
凸部２ａ上には、例えば金などの軟Ｘ線吸収層１
が被着形成されている。さらにこの軟Ｘ線吸収層
１を含む軟Ｘ線透過層２の上面全面には物理的接
触性が強く、かつＸ線透過率の良好なポリアミド
の保護膜４が被着形成されている。 FIG. 2 is a sectional view of a main part showing an example of a transfer mask for X-ray exposure according to the present invention, and since the same symbols as in FIG. 1 represent one element, a description thereof will be omitted. In the figure, a convex portion 2a is integrally formed on the upper surface of the soft X-ray transparent layer 2, corresponding to the shape of a desired mask pattern. Then, on the convex portions 2a of this mask pattern shape, a soft X-ray absorbing layer 1 made of, for example, gold is placed.
is formed by adhesion. Furthermore, a polyamide protective film 4 having strong physical contact and good X-ray transmittance is formed on the entire upper surface of the soft X-ray transmitting layer 2 including the soft X-ray absorbing layer 1.
このような構成によれば、軟Ｘ線吸収層１パタ
ーンは、物理的接触性に強くかつＸ線に対して透
明な保護膜４で被覆されるため、軟Ｘ線透過層２
上に軟Ｘ線吸収層１のパターンが突出して設けら
れても、Ｘ線を減衰させることなく、物理的接触
による損傷を確実に防止することができる。 According to such a configuration, the soft X-ray absorbing layer 1 pattern is covered with the protective film 4 that is strong against physical contact and transparent to X-rays, so that the soft X-ray transmitting layer 2
Even if the pattern of the soft X-ray absorption layer 1 is provided in a protruding manner thereon, damage caused by physical contact can be reliably prevented without attenuating the X-rays.
次に、上記構成によるＸ線露光用転写マスク
は、第３図ａ〜ｅに示す工程によつて形成され
る。すなわち、これらの図において、まず、同図
ａに示すように、面方位１００のシリコン基板５
の上面に７×1019atom／cm3以上のボロン濃度を有
するエピタキシヤル６を４〜６μｍの厚さに成長
させる。次いでシリコン基板５の裏面側を熱酸化
して熱酸化膜を約3000Åの厚さに形成し、上記支
持体３を形成するためのエツチング用マスクパタ
ーン７を形成する。次に、同図ｂに示すように、
エピタキシヤル６の上面に例えば金層８をスパツ
タリングまたは真空蒸着法により0.1〜0.3μｍの
厚さに被着させる。しかる、この金属８上にレジ
ストを塗布し、所望のパターンを焼付け、現像し
てレジストパターンを形成する。次に、同図ｃで
示すように、このレジストパターン９をエツチグ
マスクとして金属８に物理化学的蝕刻法、例えば
イオンエツチングを施し、前記軟Ｘ線吸収層１と
しのパターン１０を得る。次いでこのパターン１
０およびレジストパターン９をマスクとして図ｂ
に示すエピタキシヤル層６を物理化学的蝕刻法、
例えばプラズマエツチングによりさらエツチング
してパターン１０の形状に対応して一体的に凸部
２ａを有する軟Ｘ線透過層２を形成する。この場
合、エツチングの深さは２〜３μｍ程度で良い。
また、この場合のプララズマエツチは、反応ガス
としてCF4（フレオン）を用いれば、精度が極め
て高く、かつ蝕刻後のエツジがシヤープでしかも
寸法コントロル性の容易なエツチングが可能とな
る。次に、パターン１０上のイジストパターン９
を除去した後、同図ｄに示すように、軟Ｘ線吸収
層１を凸部２ａ上に形成した軟Ｘ線透過層２の上
面全面に、軟Ｘ線に対して透明な物質、例えばポ
リアミドをスピンコードなどにより１〜２μｍの
厚さに被着させ、80〜150℃の温度で加熱し、硬
化させて保護膜４を形成する。次いでシリコン基
板５上に形成されたエツチングマスクパターン７
を使用してシリコン基板５を選択エツチングする
と、同図ｅに示すように、エピタキシヤル層６か
らなる軟Ｘ線透過層２のみが残り、同時に支持体
３が形成される。しかる後、エツチングマスクパ
ターン７が除去して第２図に示すようなＸ線露光
用転写マスクが形成される。 Next, the transfer mask for X-ray exposure having the above structure is formed by the steps shown in FIGS. 3a to 3e. That is, in these figures, first, as shown in figure a, a silicon substrate 5 with a surface orientation of 100 is prepared.
An epitaxial layer 6 having a boron concentration of 7×10 19 atoms/cm 3 or more is grown to a thickness of 4 to 6 μm on the upper surface of the substrate. Next, the back side of the silicon substrate 5 is thermally oxidized to form a thermal oxide film with a thickness of about 3000 Å, and an etching mask pattern 7 for forming the support 3 is formed. Next, as shown in Figure b,
For example, a gold layer 8 is deposited on the upper surface of the epitaxial layer 6 by sputtering or vacuum deposition to a thickness of 0.1 to 0.3 .mu.m. However, a resist is applied onto this metal 8, and a desired pattern is baked and developed to form a resist pattern. Next, as shown in FIG. 3C, the metal 8 is subjected to physicochemical etching, for example, ion etching, using the resist pattern 9 as an etching mask to obtain a pattern 10 serving as the soft X-ray absorbing layer 1. Then this pattern 1
Figure b using 0 and resist pattern 9 as a mask.
The epitaxial layer 6 shown in FIG.
For example, the soft X-ray transparent layer 2 is further etched by plasma etching to form the soft X-ray transparent layer 2 having the convex portions 2a integrally corresponding to the shape of the pattern 10. In this case, the etching depth may be about 2 to 3 μm.
Furthermore, if CF 4 (Freon) is used as the reaction gas in the plasma etching in this case, it becomes possible to perform etching with extremely high accuracy, sharp edges after etching, and easy dimensional control. Next, the illustration pattern 9 on the pattern 10 is
After removing the soft X-rays, as shown in FIG. is applied to a thickness of 1 to 2 μm using a spin cord or the like, heated at a temperature of 80 to 150° C., and cured to form the protective film 4. Next, an etching mask pattern 7 is formed on the silicon substrate 5.
When the silicon substrate 5 is selectively etched using the etching method, as shown in FIG. Thereafter, the etching mask pattern 7 is removed to form a transfer mask for X-ray exposure as shown in FIG.
このような方法によれば、軟Ｘ線吸収層１、軟
Ｘ線透過層２を蝕刻して形成しその上面にポリア
ミドの保護膜４を被着しているので、Ｘ線の減衰
に変化なく、充分な機械的強度が得られる。ま
た、軟Ｘ線吸収層１上に被着された物質は、でき
る限り強固である必要があるが、ポリアミドは、
充分な機械的強度を有して金層８から形成された
軟Ｘ線吸収層１を強固に保護することができる。
また、保護膜４を被着させることにより、ウエハ
と密着させた場、若干の間隙が生ずるが、膜厚が
極めて薄いため、パターン精度に影響を与える程
度ではない。また、保護膜４の被着温度は低温で
あるため、パターン精度に影響を与えない。さら
にはエピタキヤル層６の付着強度も十分であり、
実用上全く問題ない。 According to this method, the soft X-ray absorbing layer 1 and the soft X-ray transmitting layer 2 are formed by etching, and the polyamide protective film 4 is coated on the top surface, so there is no change in the attenuation of X-rays. , sufficient mechanical strength can be obtained. In addition, the material deposited on the soft X-ray absorption layer 1 needs to be as strong as possible, and polyamide
The soft X-ray absorption layer 1 formed from the gold layer 8 having sufficient mechanical strength can be strongly protected.
Further, by depositing the protective film 4, a slight gap is generated when the protective film 4 is brought into close contact with the wafer, but since the film thickness is extremely thin, it does not affect pattern accuracy. Furthermore, since the protective film 4 is deposited at a low temperature, pattern accuracy is not affected. Furthermore, the adhesion strength of the epitaxial layer 6 is sufficient,
There is no practical problem at all.
なお、上記実施例においては、軟Ｘ線吸収層と
して金を用い、軟Ｘ線透過層としてエピタキシヤ
ル層を用い、保護膜としてポリアミドをそれぞれ
用いた場合について説明したたが、本発明はこれ
に限定されるものではなく、他の軟Ｘ線吸収層、
軟Ｘ線透過層、保護膜を用いても前述と同様の効
果が得られることは勿論である。 In the above embodiments, the case where gold is used as the soft X-ray absorbing layer, an epitaxial layer is used as the soft X-ray transparent layer, and polyamide is used as the protective film is explained, but the present invention is not limited to this. Without limitation, other soft X-ray absorbing layers,
Of course, the same effects as described above can also be obtained by using a soft X-ray transparent layer and a protective film.
また、上記実施例おいては、軟Ｘ線収層を形成
した軟Ｘ線透過層の上面全面に保護膜を被着形成
させた場合において説明したが、本発明はこれに
限限定されるものではなく、軟Ｘ線吸収のみに被
着形成されても前述と同様の効果が得られること
は勿論である。 Furthermore, in the above embodiments, a case was explained in which a protective film was formed on the entire upper surface of the soft X-ray transparent layer on which a soft X-ray convergence layer was formed, but the present invention is not limited to this. Of course, the same effect as described above can be obtained even if the layer is formed by adhesion only for soft X-ray absorption.
以上説明したように本発明によるＸ線露光用転
写マスクによれば、Ｘ線の透過率を減衰させるこ
となく、軟Ｘ線吸収層に物理的接触によつて生じ
る損傷を確実に防止できる極めて優れた効果が得
られる。 As explained above, the transfer mask for X-ray exposure according to the present invention is extremely superior in that it can reliably prevent damage caused by physical contact with the soft X-ray absorbing layer without attenuating the transmittance of X-rays. You can get the same effect.
第１図は従来のＸ線露光用転写マスクの一例を
示す要部断面図、第２図は本発明によるＸ線露光
用転写マスクの一例を示す要部断面図、第３図ａ
〜ｅは本発明によるＸ線露光用転写マスクの製造
方法を説明するための要部断面工程図である。
１……軟Ｘ線吸収層、２……軟Ｘ線透過層、２
ａ……凸部、３……支持体、４……保護膜、５…
…シリコン基板、６……エピタキシヤル層、７…
…マスクパターン、８……金属、９……レジスト
パターン、１０……パターン。
FIG. 1 is a cross-sectional view of a main part showing an example of a conventional transfer mask for X-ray exposure, FIG. 2 is a cross-sectional view of a main part showing an example of a transfer mask for X-ray exposure according to the present invention, and FIG.
- e are main part cross-sectional process diagrams for explaining the manufacturing method of the transfer mask for X-ray exposure according to the present invention. 1...Soft X-ray absorption layer, 2...Soft X-ray transmission layer, 2
a...Convex portion, 3...Support, 4...Protective film, 5...
...Silicon substrate, 6...Epitaxial layer, 7...
...Mask pattern, 8...Metal, 9...Resist pattern, 10...Pattern.
Claims (1)
良好にすべく凹部を有する軟Ｘ線透過層、上記主
面側の上記凹部以外の軟Ｘ線透過層上に設けられ
た軟Ｘ線吸収層、上記軟Ｘ線透過層の凹部および
上記軟Ｘ線吸収層の表面に設けられた保護膜を備
え、上記凹部およびその上の保護膜におけるＸ線
の減衰量を上記軟Ｘ線透過層の上記凹部以外の部
分におけるそれよりも小さくしたことを特徴とす
るＸ線露光用転写マスク。1. A soft X-ray transparent layer that is selectively formed from the main surface side and has a recessed portion to improve the transmission of X-rays, a soft A radiation absorbing layer, a protective film provided on a recess in the soft X-ray transmitting layer and a surface of the soft X-ray absorbing layer, the amount of attenuation of X-rays in the recess and the protective film on the soft X-ray transmitting layer is controlled by the soft X-ray transmitting layer. A transfer mask for X-ray exposure, characterized in that the size of the layer is smaller than that of a portion of the layer other than the recessed portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9122479A JPS5616137A (en) | 1979-07-17 | 1979-07-17 | Transfer mask for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9122479A JPS5616137A (en) | 1979-07-17 | 1979-07-17 | Transfer mask for x-ray exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5616137A JPS5616137A (en) | 1981-02-16 |
| JPS6142851B2 true JPS6142851B2 (en) | 1986-09-24 |
Family
ID=14020443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9122479A Granted JPS5616137A (en) | 1979-07-17 | 1979-07-17 | Transfer mask for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5616137A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5552442A (en) * | 1978-10-12 | 1980-04-16 | Tsuonguraato Mejiei Tanatsui E | Universal building frame construction |
| JPS5957433A (en) * | 1982-09-27 | 1984-04-03 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask and its manufacture |
| JPH077207B2 (en) * | 1987-05-16 | 1995-01-30 | 出光石油化学株式会社 | Durable pattern forming member |
-
1979
- 1979-07-17 JP JP9122479A patent/JPS5616137A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5616137A (en) | 1981-02-16 |
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