JPS6140878A - Bonded body of silicon nitride sintered body and metal and manufacture - Google Patents
Bonded body of silicon nitride sintered body and metal and manufactureInfo
- Publication number
- JPS6140878A JPS6140878A JP16265384A JP16265384A JPS6140878A JP S6140878 A JPS6140878 A JP S6140878A JP 16265384 A JP16265384 A JP 16265384A JP 16265384 A JP16265384 A JP 16265384A JP S6140878 A JPS6140878 A JP S6140878A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- sintered body
- nitride sintered
- metal
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は比較的低温で形成可能な窒化硅素焼結体と金属
の接合体、及びその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a bonded body of a silicon nitride sintered body and a metal that can be formed at a relatively low temperature, and a method for manufacturing the same.
（従来技術）
近年高温材料あるいは高硬度材料としてのセラミック材
料が注目され、アルミナ等の酸化物系セラミックだけで
はなく、炭化硅素や窒化硅素等非酸化物系セラミックの
研究が盛んに行なわれている。(Prior art) Ceramic materials as high-temperature materials or high-hardness materials have attracted attention in recent years, and research has been actively conducted not only on oxide-based ceramics such as alumina but also on non-oxide-based ceramics such as silicon carbide and silicon nitride. .
（発明が解決しようとする問題点）
しかしセラミック材料はその高硬度や低靭性がら来る加
工性の悪さ等のためその用途は制限されており、これを
克服する方法の１つとしてセラミックと金属の接合が考
えられている。(Problem to be solved by the invention) However, the use of ceramic materials is limited due to poor workability due to their high hardness and low toughness, and one way to overcome this is to combine ceramics and metals. Bonding is being considered.
従来より行なわれているセラミックと金属の接合法には
ＩＣ基板の封着等に用いられる所謂Ｍｏ −胤法、高圧
ナトリウムランプの封着に用いられる酸化物ソルダー法
等があるが、いずれもアルミナを中心とする酸化物系セ
ラミックを対象とするものであり、溶融物質とのぬれ性
や反応性に乏しくアルミナよりさらに熱膨張率の低い窒
化硅素と金属の接合は主に機械的な方法によって行なわ
れており、部分的に高い応力が加わるため十分な強度が
得られないのが現状である。Conventional ceramic-to-metal bonding methods include the so-called Mo-seed method used for sealing IC boards, and the oxide solder method used for sealing high-pressure sodium lamps, but both of these methods use alumina. Silicon nitride, which has poor wettability and reactivity with molten substances and has an even lower coefficient of thermal expansion than alumina, and metals are mainly joined by mechanical methods. Currently, sufficient strength cannot be obtained because high stress is applied to some parts.
本発明はこれを解決するため開発されたものである。The present invention was developed to solve this problem.
（問題点を解決するための手段）
本発明は窒化硅素焼結体と被接合金属間にＷ−Ｃｕ合金
を介在させてなることを特徴とする接合体及びその製造
方法である。(Means for Solving the Problems) The present invention is a joined body characterized by interposing a W--Cu alloy between a silicon nitride sintered body and a metal to be joined, and a method for manufacturing the same.
（作用）
すなわち窒化硅素と金属との接合を困難にしていた
（１）溶融物とのぬれ性及び反応性の悪さ、（２）アル
ミナよりさらに低い熱膨張率（アルミナ：約７Ｘ１０
’に一’、窒化硅素：約３Ｘ１０ ’Ｋ ’）から来る
接合形成後の残留熱応力、
をＷ−Ｃｕ合金を介在させることにより同時に克服する
ものである。(Function) That is, it was difficult to bond silicon nitride and metal (1) poor wettability and reactivity with molten materials, (2) lower thermal expansion coefficient than alumina (alumina: approximately 7×10
At the same time, the residual thermal stress after bond formation caused by silicon nitride (approximately 3×10 K') is overcome by interposing the W--Cu alloy.
さらに詳細に説明すれば、まず第１図の様に窒化硅素焼
結体（１）とＷ−Ｃｕ合金（２）を配置し、非酸化性あ
るいは弱酸化性雰囲気中、銅の融点（１０８３℃）以上
に、好ましくは１２５０℃以下に加熱する。加熱により
Ｗ−Ｃｕ合金から溶は出したＣｕが窒化硅素焼結体と反
応し接合体を形成する。To explain in more detail, first, as shown in Fig. 1, a silicon nitride sintered body (1) and a W-Cu alloy (2) are arranged, and placed in a non-oxidizing or weakly oxidizing atmosphere at the melting point of copper (1083°C). ), preferably 1250°C or lower. Cu melted out from the W-Cu alloy by heating reacts with the silicon nitride sintered body to form a bonded body.
こ＼で非酸化性雰囲気とはＨ２、Ｎ２ 、 Ｃｏ 、
Ａｒガス雰囲気あるいはその混合ガス雰囲気及び真空雰
囲気等を意味し、弱酸化性雰囲気きは上記非酸化性雰囲
気゛に少量の水あるいは酸素等を添加した雰囲気例えば
加湿水素雰囲気等を意味する。Here, non-oxidizing atmospheres include H2, N2, Co,
This refers to an Ar gas atmosphere or a mixed gas atmosphere thereof, a vacuum atmosphere, etc., and a weakly oxidizing atmosphere refers to an atmosphere in which a small amount of water or oxygen is added to the above-mentioned non-oxidizing atmosphere, such as a humidified hydrogen atmosphere.
また加熱時に機械的圧力を加えることにより窒化硅素焼
結体とＷ−Ｃｕ合金の密着性が向上し接合強度を上昇さ
せることができる。Furthermore, by applying mechanical pressure during heating, the adhesion between the silicon nitride sintered body and the W-Cu alloy can be improved, and the bonding strength can be increased.
この顧にして得られた接合体は第２図の様に被接合金属
（４）にろう付けすることができる。（３）はろう材で
ある。The joined body obtained in this way can be brazed to the metal to be joined (4) as shown in FIG. (3) is a brazing material.
被接合金属（４）の融点がＣｕより高く、Ｃｕの融点以
上に加熱しても溶融腐食の恐れのない場合には第３図の
様に窒化硅素焼結体（１）、Ｗ−Ｃｕ合金（２）、被接
合金属（４）を配置し、一度の加熱で求める接合体を得
ることが可能である。この場合にはＷ−Ｃｕ合金中の銅
がろう材の役割を果たし、被接合金属との接合を形成す
る。If the melting point of the metal to be welded (4) is higher than that of Cu, and there is no risk of melt corrosion even when heated above the melting point of Cu, silicon nitride sintered body (1), W-Cu alloy as shown in Figure 3 is used. (2) It is possible to obtain the desired bonded body by placing the metal to be bonded (4) and heating it once. In this case, the copper in the W-Cu alloy plays the role of a brazing filler metal and forms a bond with the metal to be bonded.
また加熱時に圧力を加えることにより窒化硅素焼結体と
被接合金属の密着性が向上し、接合強度の上昇につなが
る。Furthermore, by applying pressure during heating, the adhesion between the silicon nitride sintered body and the metal to be joined is improved, leading to an increase in joint strength.
（実施例） 以下゛に本発明の理解を助けるため実施例を述べる。(Example) Examples will be described below to help understand the present invention.
実施例１．−
窒化硅素焼結体（ＭｇＯ添加）とＷ−Ｃｕ合金（Ｃｕ：
１０重量％、厚さ０．５１＋ｌ＋１１）を第１図の様に
配置し、５０Ｋｇ・Ｃ＋＋＋−２ノ圧カ下、１気圧（７
）！素中１１５０℃で２０分間加熱し、窒化硅素焼結体
とＷ −Ｃｕ合金の接合体を得た。さらに第４図に示す
様にコバール板（５）（厚さ０．５ ｍｍ ）を介在さ
せ争鋳鉄板（厚さ１０ ｒｔｍ ）に銀ろう（ＢＡｇ
−１Ａ ）を用いてろう付けすることにより求める接合
体を得た。Example 1. - Silicon nitride sintered body (MgO added) and W-Cu alloy (Cu:
10% by weight, thickness 0.51+l+11) was arranged as shown in Figure 1, and heated under a pressure of 50Kg・C+++-2 and 1 atm (7
)! It was heated in an atomic bomb at 1150° C. for 20 minutes to obtain a joined body of the silicon nitride sintered body and the W-Cu alloy. Further, as shown in Fig. 4, a Kovar plate (5) (thickness 0.5 mm) is interposed and silver solder (BAg
-1A) was used to obtain the desired joined body.
実施例Ｚ
窒化硅素焼結体（ＭｇＯ添加）、Ｗ−Ｃｕ合金（Ｃｕ：
１０重量％、厚さ０．５ ｒｔｒｍ ）、Ｎｂ板（厚さ
３ Ｔｒｎ）を第３図の様に配置し２０Ｋｇ・ＣＩｌ＋
’の圧力下１気圧のＡｒ９１１５０℃で２０分加熱し、
一度の加熱で窒化硅素焼結体とＮｂの接合体を得た。Example Z Silicon nitride sintered body (MgO added), W-Cu alloy (Cu:
10% by weight, thickness 0.5 rtrm), Nb plate (thickness 3 Trn) was arranged as shown in Fig. 3, and 20Kg・CIl+
Heated at 1 atm of Ar91 at 50°C for 20 minutes under a pressure of '.
A bonded body of silicon nitride sintered body and Nb was obtained by heating once.
このようにＷ−Ｃｕ合金を用いることにより比較的低温
で窒化硅素焼結体と金属の接合体を得ることができた。By using the W--Cu alloy in this way, it was possible to obtain a bonded body of silicon nitride sintered body and metal at a relatively low temperature.
（発明の効果）
以上の様な本発明の窒化硅素焼結体と金属の接合体は密
着性のよい又残留熱応力のない優れた接合特性を示す。(Effects of the Invention) The silicon nitride sintered body and metal bonded body of the present invention as described above exhibits excellent bonding properties with good adhesion and no residual thermal stress.
又本発明の接合体の製造法によれば比較的低温で容易に
上記価れた接合体を得ることが出来る。Further, according to the method for manufacturing a bonded body of the present invention, the above-mentioned high quality bonded body can be easily obtained at a relatively low temperature.
第１図は窒化硅素焼結体とＷ−Ｃｕ合金の接合体を、第
２．６及び４図はいずれも窒化硅素焼結体と金属の間に
Ｗ−Ｃｕ合金を介在させた一接合体を示すが、第２図は
ろう付けにより、第３図は一度の加熱により、接合され
ているものを、第４図はろう付は時に中間層を介在させ
たものを夫々例示している。
（１）・・・窒化硅素焼結体、（２）・・・Ｗ−Ｃｕ合
金、（６）・・・ろう材、（４）・・・被接合金属、（
５）・・・コバール
第１図
第３図Figure 1 shows a joined body of a silicon nitride sintered body and a W-Cu alloy, and Figures 2.6 and 4 show a joined body in which a W-Cu alloy is interposed between a silicon nitride sintered body and a metal. 2, FIG. 3 shows a case where the parts are joined by one-time heating, and FIG. 4 shows a case where an intermediate layer is sometimes used for brazing. (1)... Silicon nitride sintered body, (2)... W-Cu alloy, (6)... Brazing metal, (4)... Metal to be joined, (
5)...Khobar Figure 1 Figure 3
Claims (6)
介在させてなることを特徴とする窒化硅素焼結体と金属
の接合体。(1) A joined body of a silicon nitride sintered body and a metal, characterized in that a W-Cu alloy is interposed between the silicon nitride sintered body and the metal to be joined.
介在させてなる窒化硅素焼結体と金属の接合体の製造に
際し、Ｗ−Ｃｕ合金を少くとも窒化硅素焼結体に接触さ
せて非酸化性又は弱酸化性雰囲気中で銅の融点以上に加
熱することを特徴とする窒化硅素焼結体と金属の接合体
の製造方法。(2) When producing a bonded body of a silicon nitride sintered body and a metal by interposing a W-Cu alloy between the silicon nitride sintered body and the metal to be joined, the W-Cu alloy is at least added to the silicon nitride sintered body. A method for producing a bonded body of a silicon nitride sintered body and a metal, which comprises bringing the silicon nitride sintered body into contact with the metal and heating it above the melting point of copper in a non-oxidizing or weakly oxidizing atmosphere.
化性又は弱酸化性雰囲気中で銅の融点以上に加熱して窒
化硅素焼結体とＷ−Ｃｕ合金の接合体を得、この窒化硅
素焼結体とＷ−Ｃｕ合金の接合体を被接合金属とろう付
けする特許請求の範囲第（２）項記載の窒化硅素焼結体
と金属の接合体の製造方法。(3) The silicon nitride sintered body and the W-Cu alloy are brought into contact and heated above the melting point of copper in a non-oxidizing or slightly oxidizing atmosphere to obtain a joined body of the silicon nitride sintered body and the W-Cu alloy. A method for producing a joined body of a silicon nitride sintered body and a metal according to claim (2), wherein the joined body of the silicon nitride sintered body and a W-Cu alloy is brazed to a metal to be joined.
るに際し焼結体と合金間に圧力を加える特許請求の範囲
第（３）項記載の窒化硅素焼結体と金属の接合体の製造
方法。(4) A joined body of a silicon nitride sintered body and metal according to claim (3), in which pressure is applied between the sintered body and the alloy when the silicon nitride sintered body and the W-Cu alloy are brought into contact with each other and heated. manufacturing method.
属間にＷ−Ｃｕ合金を介在させて非酸化性又は弱酸化性
雰囲気中で銅の融点以上に加熱する特許請求の範囲第（
２）項記載の窒化硅素焼結体と金属の接合体の製造方法
。(5) A W-Cu alloy is interposed between the silicon nitride sintered body and the metal to be joined, which has a melting point higher than that of copper, and is heated to a temperature higher than the melting point of copper in a non-oxidizing or slightly oxidizing atmosphere. (
2) A method for producing a joined body of a silicon nitride sintered body and a metal as described in section 2).
介在させ加熱するに際し合金を介在させた焼結体と被接
合金属間に圧力を加える特許請求の範囲第（５）項記載
の窒化硅素焼結体と金属の接合体の製造方法。(6) Claim (5) in which a W-Cu alloy is interposed between the silicon nitride sintered body and the metal to be welded, and when heating, pressure is applied between the sintered body with the alloy interposed and the metal to be welded. A method for manufacturing the bonded body of a silicon nitride sintered body and a metal as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16265384A JPS6140878A (en) | 1984-07-31 | 1984-07-31 | Bonded body of silicon nitride sintered body and metal and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16265384A JPS6140878A (en) | 1984-07-31 | 1984-07-31 | Bonded body of silicon nitride sintered body and metal and manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6140878A true JPS6140878A (en) | 1986-02-27 |
Family
ID=15758711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16265384A Pending JPS6140878A (en) | 1984-07-31 | 1984-07-31 | Bonded body of silicon nitride sintered body and metal and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6140878A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01205053A (en) * | 1988-02-12 | 1989-08-17 | Ngk Spark Plug Co Ltd | Joining stress buffer alloy of ceramics and metal and joined body of ceramics and metal formed by using said buffer alloy |
| RU2752820C1 (en) * | 2020-10-07 | 2021-08-06 | Федеральное государственное бюджетное учреждение науки Институт электрофизики и электроэнергетики Российской академии наук (ИЭЭ РАН) | Method for diffusion welding of ceramic workpieces |
| CN113913664A (en) * | 2021-07-13 | 2022-01-11 | 中国科学院兰州化学物理研究所 | Silicon nitride reinforced tungsten and tungsten alloy material and preparation method thereof |
-
1984
- 1984-07-31 JP JP16265384A patent/JPS6140878A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01205053A (en) * | 1988-02-12 | 1989-08-17 | Ngk Spark Plug Co Ltd | Joining stress buffer alloy of ceramics and metal and joined body of ceramics and metal formed by using said buffer alloy |
| RU2752820C1 (en) * | 2020-10-07 | 2021-08-06 | Федеральное государственное бюджетное учреждение науки Институт электрофизики и электроэнергетики Российской академии наук (ИЭЭ РАН) | Method for diffusion welding of ceramic workpieces |
| CN113913664A (en) * | 2021-07-13 | 2022-01-11 | 中国科学院兰州化学物理研究所 | Silicon nitride reinforced tungsten and tungsten alloy material and preparation method thereof |
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