JPS6140774Y2 - - Google Patents
Info
- Publication number
- JPS6140774Y2 JPS6140774Y2 JP16767283U JP16767283U JPS6140774Y2 JP S6140774 Y2 JPS6140774 Y2 JP S6140774Y2 JP 16767283 U JP16767283 U JP 16767283U JP 16767283 U JP16767283 U JP 16767283U JP S6140774 Y2 JPS6140774 Y2 JP S6140774Y2
- Authority
- JP
- Japan
- Prior art keywords
- frequency electrode
- electrode
- sample
- semiconductor substrate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16767283U JPS6075460U (ja) | 1983-10-28 | 1983-10-28 | プラズマ気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16767283U JPS6075460U (ja) | 1983-10-28 | 1983-10-28 | プラズマ気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6075460U JPS6075460U (ja) | 1985-05-27 |
| JPS6140774Y2 true JPS6140774Y2 (US20020051482A1-20020502-M00012.png) | 1986-11-20 |
Family
ID=30366770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16767283U Granted JPS6075460U (ja) | 1983-10-28 | 1983-10-28 | プラズマ気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6075460U (US20020051482A1-20020502-M00012.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2601488B2 (ja) * | 1987-10-13 | 1997-04-16 | 三井東圧化学株式会社 | 膜形成装置 |
-
1983
- 1983-10-28 JP JP16767283U patent/JPS6075460U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6075460U (ja) | 1985-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07147251A (ja) | 結晶性炭化ケイ素膜の成長方法 | |
| JPH0211012B2 (US20020051482A1-20020502-M00012.png) | ||
| JPH09219369A (ja) | 半導体装置の製造装置および製造方法 | |
| JPH0260210B2 (US20020051482A1-20020502-M00012.png) | ||
| JPS6054919B2 (ja) | 低圧反応装置 | |
| JPS6140774Y2 (US20020051482A1-20020502-M00012.png) | ||
| JPH0377655B2 (US20020051482A1-20020502-M00012.png) | ||
| JPS592374B2 (ja) | プラズマ気相成長装置 | |
| JP2654790B2 (ja) | 気相成長法 | |
| JPS6233014Y2 (US20020051482A1-20020502-M00012.png) | ||
| JPH0639709B2 (ja) | プラズマｃｖｄ装置 | |
| JPH01188678A (ja) | プラズマ気相成長装置 | |
| JPS5941773B2 (ja) | 気相成長方法及び装置 | |
| JP3495501B2 (ja) | 気相成長装置 | |
| JPS6151629B2 (US20020051482A1-20020502-M00012.png) | ||
| JPS5837388B2 (ja) | キソウセイチヨウホウホウ | |
| JPH01123413A (ja) | 気相成長装置 | |
| KR200145299Y1 (ko) | 대기압식 화학기상증착장치 | |
| JP3553744B2 (ja) | 積層部材の製造方法 | |
| JPS63104417A (ja) | 半導体薄膜形成装置 | |
| JPH01129974A (ja) | 化学気相成長装置 | |
| JPS6126217A (ja) | 気相成長装置 | |
| JPS60126823A (ja) | プラズマ気相成長装置 | |
| JPS62213252A (ja) | ＳｉＣ半導体膜の形成方法 | |
| JPS6310892B2 (US20020051482A1-20020502-M00012.png) |
