JPS6140155B2 - - Google Patents
Info
- Publication number
- JPS6140155B2 JPS6140155B2 JP53089163A JP8916378A JPS6140155B2 JP S6140155 B2 JPS6140155 B2 JP S6140155B2 JP 53089163 A JP53089163 A JP 53089163A JP 8916378 A JP8916378 A JP 8916378A JP S6140155 B2 JPS6140155 B2 JP S6140155B2
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- zinc
- thin film
- boron
- oxide thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 94
- 239000011787 zinc oxide Substances 0.000 claims description 47
- 239000010409 thin film Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 41
- 239000011521 glass Substances 0.000 claims description 34
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 27
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 27
- 229910052725 zinc Inorganic materials 0.000 claims description 27
- 239000011701 zinc Substances 0.000 claims description 27
- 229910052796 boron Inorganic materials 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 16
- 238000010897 surface acoustic wave method Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000000654 additive Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/216—ZnO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8916378A JPS5516554A (en) | 1978-07-21 | 1978-07-21 | Manufacture of thin film of zinc oxide |
DE2929269A DE2929269C2 (de) | 1978-07-21 | 1979-07-19 | Verfahren zur Herstellung eines Zinkoxid-Dünnfilms |
US06/240,578 US4336120A (en) | 1978-07-21 | 1981-03-04 | Method of fabricating a zinc oxide thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8916378A JPS5516554A (en) | 1978-07-21 | 1978-07-21 | Manufacture of thin film of zinc oxide |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5516554A JPS5516554A (en) | 1980-02-05 |
JPS6140155B2 true JPS6140155B2 (fr) | 1986-09-08 |
Family
ID=13963144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8916378A Granted JPS5516554A (en) | 1978-07-21 | 1978-07-21 | Manufacture of thin film of zinc oxide |
Country Status (3)
Country | Link |
---|---|
US (1) | US4336120A (fr) |
JP (1) | JPS5516554A (fr) |
DE (1) | DE2929269C2 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57118022A (en) * | 1981-01-12 | 1982-07-22 | Murata Mfg Co Ltd | Formation of zinc oxide film |
JPH0731950B2 (ja) * | 1985-11-22 | 1995-04-10 | 株式会社リコー | 透明導電膜の製造方法 |
US4853594A (en) * | 1988-08-10 | 1989-08-01 | Rogers Corporation | Electroluminescent lamp |
JPH02181304A (ja) * | 1988-09-22 | 1990-07-16 | Nippon Soken Inc | 酸化亜鉛系透明導電膜およびその製膜方法 |
JP3335384B2 (ja) * | 1991-12-26 | 2002-10-15 | 旭硝子株式会社 | 熱線遮断膜 |
US5532062A (en) * | 1990-07-05 | 1996-07-02 | Asahi Glass Company Ltd. | Low emissivity film |
US5419969A (en) * | 1990-07-05 | 1995-05-30 | Asahi Glass Company Ltd. | Low emissivity film |
JP3085043B2 (ja) * | 1993-08-05 | 2000-09-04 | 株式会社村田製作所 | サファイア面上の酸化亜鉛圧電結晶膜 |
US5736267A (en) * | 1994-08-17 | 1998-04-07 | Asahi Glass Company Ltd. | Transparent conductive film and method for its production, and sputtering target |
US5942090A (en) * | 1996-04-12 | 1999-08-24 | Asahi Glass Company Ltd. | Methods of producing a laminate |
US6238808B1 (en) * | 1998-01-23 | 2001-05-29 | Canon Kabushiki Kaisha | Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device |
FI19992510A (fi) * | 1999-11-24 | 2001-05-25 | Nokia Mobile Phones Ltd | Elektroniikkalaite ja menetelmä elektroniikkalaitteessa |
JP4884575B2 (ja) * | 2010-05-13 | 2012-02-29 | 三井・デュポンポリケミカル株式会社 | 多層材料、太陽電池用封止材、安全(合わせ)ガラス用中間膜、太陽電池モジュール及び安全(合わせ)ガラス |
US8815420B2 (en) | 2010-09-17 | 2014-08-26 | Guardian Industries Corp. | Coated article having zinc oxide seed layer with reduced stress under functional layer and method of making the same |
US8808882B2 (en) | 2010-09-17 | 2014-08-19 | Guardian Industries Corp. | Coated article having boron doped zinc oxide based seed layer with enhanced durability under functional layer and method of making the same |
EP3305939A4 (fr) * | 2015-05-26 | 2019-03-13 | National Institute for Materials Science | Revêtement à faible frottement formé d'un film mince d'oxyde de zinc à bore ajouté, et micromachine |
JP7077287B2 (ja) * | 2018-09-28 | 2022-05-30 | 日東電工株式会社 | 圧電デバイス、及び圧電デバイスの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3766041A (en) * | 1970-09-29 | 1973-10-16 | Matsushita Electric Ind Co Ltd | Method of producing piezoelectric thin films by cathodic sputtering |
GB1582317A (en) * | 1977-01-25 | 1981-01-07 | Murata Manufacturing Co | Piezoelectric crystalline films |
JPS5396495A (en) * | 1977-02-02 | 1978-08-23 | Murata Manufacturing Co | Piezooelectric crystal film of zinc oxide |
DE2811044C3 (de) * | 1977-03-16 | 1981-02-26 | Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto (Japan) | Piezoelektrische kristalline Filme |
JPS5830749B2 (ja) * | 1977-07-28 | 1983-07-01 | 株式会社村田製作所 | 酸化亜鉛の圧電結晶膜 |
-
1978
- 1978-07-21 JP JP8916378A patent/JPS5516554A/ja active Granted
-
1979
- 1979-07-19 DE DE2929269A patent/DE2929269C2/de not_active Expired
-
1981
- 1981-03-04 US US06/240,578 patent/US4336120A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2929269C2 (de) | 1983-07-07 |
JPS5516554A (en) | 1980-02-05 |
DE2929269A1 (de) | 1980-01-31 |
US4336120A (en) | 1982-06-22 |
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