JPS6139394B2 - - Google Patents
Info
- Publication number
- JPS6139394B2 JPS6139394B2 JP54004256A JP425679A JPS6139394B2 JP S6139394 B2 JPS6139394 B2 JP S6139394B2 JP 54004256 A JP54004256 A JP 54004256A JP 425679 A JP425679 A JP 425679A JP S6139394 B2 JPS6139394 B2 JP S6139394B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- evaporation source
- ion plating
- substance
- box
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001704 evaporation Methods 0.000 claims description 79
- 230000008020 evaporation Effects 0.000 claims description 78
- 238000007733 ion plating Methods 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000464 lead oxide Inorganic materials 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 oxides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP425679A JPS5597468A (en) | 1979-01-17 | 1979-01-17 | Ion plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP425679A JPS5597468A (en) | 1979-01-17 | 1979-01-17 | Ion plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5597468A JPS5597468A (en) | 1980-07-24 |
| JPS6139394B2 true JPS6139394B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-09-03 |
Family
ID=11579451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP425679A Granted JPS5597468A (en) | 1979-01-17 | 1979-01-17 | Ion plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5597468A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55144391A (en) * | 1979-04-25 | 1980-11-11 | Toshiba Corp | Pipe working method |
| GB2586635B (en) * | 2019-08-30 | 2024-01-24 | Dyson Technology Ltd | Deposition system |
-
1979
- 1979-01-17 JP JP425679A patent/JPS5597468A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5597468A (en) | 1980-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1329791C (en) | Process for making diamond, doped diamond, diamond-cubic boron nitride composite films | |
| US3961103A (en) | Film deposition | |
| US3904505A (en) | Apparatus for film deposition | |
| US4959242A (en) | Method for forming a thin film | |
| US4224897A (en) | Methods of depositing materials on substrates | |
| JPH0633453B2 (ja) | 陰極スパツタリング処理により基板に薄層を被着する装置 | |
| WO2003075622A2 (en) | A method and apparatus for producing atomic flows of molecular gases | |
| JP3345009B2 (ja) | 加熱により製造された材料蒸気のイオン化方法及び該方法を実施する装置 | |
| US5952061A (en) | Fabrication and method of producing silicon films | |
| US20150140231A1 (en) | Method and apparatus for deposition of thin film materials for energy storage devices | |
| JPS6139394B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| US20030077401A1 (en) | System and method for deposition of coatings on a substrate | |
| JPS5489983A (en) | Device and method for vacuum deposition compound | |
| JP3406769B2 (ja) | イオンプレーティング装置 | |
| JPS60251269A (ja) | イオンプレ−テイング方法および装置 | |
| KR920000532B1 (ko) | 무 개스 아아크 방전 이온 플레이팅 방법 및 그 장치 | |
| Borisenko et al. | Nonself-sustained arc discharge in anode material vapors | |
| JP2687468B2 (ja) | 薄膜形成装置 | |
| JP3263499B2 (ja) | ダイヤモンド状被膜形成方法及び装置 | |
| JPS5870522A (ja) | 薄膜形成装置 | |
| JPH0760665B2 (ja) | 表面改質装置 | |
| JPS62280357A (ja) | 電子ビ−ム蒸発イオンプレ−テイングとその装置 | |
| JPS5855037A (ja) | 蒸着装置 | |
| JPH06145979A (ja) | 膜形成装置 | |
| JPH04252020A (ja) | アモルファスシリコン薄膜の形成方法及び装置 |