JPS6137769B2 - - Google Patents
Info
- Publication number
- JPS6137769B2 JPS6137769B2 JP15006680A JP15006680A JPS6137769B2 JP S6137769 B2 JPS6137769 B2 JP S6137769B2 JP 15006680 A JP15006680 A JP 15006680A JP 15006680 A JP15006680 A JP 15006680A JP S6137769 B2 JPS6137769 B2 JP S6137769B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- resin
- magnetic
- insulating layer
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
本発明は磁気バブルメモリ素子の製造方法の改
良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method of manufacturing a magnetic bubble memory element.
最近用いられるようになつて来ている磁気バブ
ルメモリ装置は、不揮発性であり、大容量高密度
の記憶が可能、低消費電力、小型軽量である等種
種の特徴をもつているため大容量メモリとして将
来が期待されている。この磁気バブルメモリ装置
は、磁気バブルを磁界により磁性薄膜内を自由に
動かすことができることを利用したもので第１図
に示す如く磁気バブルメモリ素子１、バブルを駆
動するための回転磁界発生用コイル２，２′、バ
ブルを安定に保持するためのバイアス磁界発生用
磁石３，３′等により構成されている。 Magnetic bubble memory devices, which have recently come into use, are nonvolatile, capable of large-capacity, high-density storage, low power consumption, small size, and light weight. There are high expectations for the future. This magnetic bubble memory device utilizes the fact that magnetic bubbles can be moved freely within a magnetic thin film by a magnetic field. 2, 2', bias magnetic field generating magnets 3, 3' for stably holding the bubble, and the like.
そしてメモリ素子１は第２図の断面図に示す如
く、例えば非磁性のガドリニウム・ガリウム・ガ
ーネツト（GGG）基板４の上に液相エピタキシ
ヤル成長法により磁性ガーネツトの薄膜５を形成
し、その上にSiO2等の絶縁層６および導体パタ
ーン７を順次形成し、次いで全面に第２の絶縁層
８を形成し、その上にパーマロイパターン９およ
び保護絶縁層１０を順次形成している。このよう
に形成された素子は第２の絶縁層８としてスパツ
タされたSiO2が導体パターン７の形状をそのま
ま写し出しているため、導体７の角部で非常に薄
くなり、また絶縁層８の上に形成されたパーマロ
イパターン９に段がつき、その附近の磁化が一様
にならず磁気的不具合が生ずる。そのため最近は
第２の絶縁層８の平坦化を計るためSiO2の代り
に耐熱性樹脂が用いられるようになつて来てい
る。ところが第２の絶縁層８にPIQ樹脂を用いる
と第３図の如くパーマロイ薄膜をエツチングして
パターン９に形成したのち、パターン９上に残つ
たレジスト１１を酸素プラズマにより除去すると
き第２の絶縁層８の樹脂が鎖線１２で示す如く侵
されてしまう。 As shown in the cross-sectional view of FIG. 2, the memory element 1 is manufactured by forming a thin film 5 of magnetic garnet, for example, on a non-magnetic gadolinium gallium garnet (GGG) substrate 4 by liquid phase epitaxial growth. An insulating layer 6 such as SiO 2 and a conductor pattern 7 are sequentially formed on the surface, a second insulating layer 8 is formed on the entire surface, and a permalloy pattern 9 and a protective insulating layer 10 are sequentially formed thereon. In the device formed in this way, the sputtered SiO 2 as the second insulating layer 8 mirrors the shape of the conductor pattern 7, so it becomes very thin at the corners of the conductor 7, and the top of the insulating layer 8 is very thin. The permalloy pattern 9 formed on the surface is stepped, and the magnetization in the vicinity thereof is not uniform, causing a magnetic defect. Therefore, in order to planarize the second insulating layer 8, heat-resistant resin has recently been used instead of SiO 2 . However, when PIQ resin is used for the second insulating layer 8, after the permalloy thin film is etched to form a pattern 9 as shown in FIG. The resin of layer 8 is corroded as shown by chain line 12.
また、ポリイミド系樹脂はSiO2との密着力お
よび平坦化効果も十分とは言えない。 Furthermore, polyimide resins cannot be said to have sufficient adhesion to SiO 2 and flattening effects.
これに対し、本出願人はポリイミド系樹脂に替
るものとしてポリラダーオルガノシロキサン樹脂
を開発した。この樹脂は熱分解温度が520℃以上
という高い耐熱性を有し、且つSiO2との密着力
及び平坦化効果がポリイミド系樹脂に比べ格段に
優れており、しかも酸素プラズマによるエツチン
グ（膜厚の減少）はほとんど起らない。 In response, the applicant has developed polyladder organosiloxane resin as an alternative to polyimide resin. This resin has high heat resistance with a thermal decomposition temperature of 520°C or higher, and its adhesion to SiO 2 and flattening effect are much superior to that of polyimide resins. (decrease) rarely occurs.
しかしながら、このポリラダーオルガノシロキ
サン樹脂では酸素プラズマにより“クラツグ”が
入りやすく、絶縁耐圧が低下する問題があつた。 However, this polyladder organosiloxane resin has a problem in that it is susceptible to "cragging" due to oxygen plasma, resulting in a decrease in dielectric strength.
本発明はこの欠点を改良するために案出された
ものである。 The present invention has been devised to improve this drawback.
このため本発明においては非磁性基板の上に一
軸異方性を有する磁性薄膜を形成し、その上に
SiO2からなる絶縁層を形成し、次いでその上に
導体パターンを形成したのち、全面にポリラダー
オルガノシロキサン樹脂からなる耐熱性樹脂を塗
布して樹脂層を形成し、該樹脂層上に無機質絶縁
物の薄膜を形成し、しかる後該薄膜上にパーマロ
イパターンおよび保護絶縁層を順次形成する諸工
程よりなることを特徴とするものである。 Therefore, in the present invention, a magnetic thin film having uniaxial anisotropy is formed on a non-magnetic substrate, and
After forming an insulating layer made of SiO 2 and then forming a conductive pattern on it, a heat-resistant resin made of polyladder organosiloxane resin is applied to the entire surface to form a resin layer, and an inorganic insulating layer is formed on the resin layer. The method is characterized by comprising steps of forming a thin film of a substance, and then sequentially forming a permalloy pattern and a protective insulating layer on the thin film.
以下添付図面に基づいて本発明方法を詳細に説
明する。 The method of the present invention will be explained in detail below based on the accompanying drawings.
第４図に本発明方法により形成されるメモリ素
子の製造工程途中の断面図を示す。図により本発
明方法を説明すると先ず非磁性基板（GGG）１
３の上に液相エピタキシヤル生長法により磁性薄
膜１４を形成する。次にこの上にSiO2を1000Å
程度スパツタし絶縁層１５を形成し、その上に
Mo，Au，Moを同一バツチで真空蒸着したの
ち、この上にホトリソグラフイ法でレジストパタ
ーンを作成し、イオンエツチング法によりMo，
Au，Moをエツチングして導体パターン１６を形
成する。エツチング後レジストを酸素プラズマに
より除去したのち全面に耐熱性樹脂であるポリラ
ダーオルガノシロキサン樹脂（PLOS樹脂）を約
2500Åの厚さになるようにスピンコートし樹脂層
１７を形成する。ここまでの工程は従来例と同様
であるが本発明ではこの後樹脂層１７の上に無機
質絶縁物を約1000Åの厚さにスパツタし無機質絶
縁物の薄膜１８を形成するのである。この無機質
絶縁物としてはAl2O3，SiO2，SiO，窒化シリコ
ン等が用いられる。この後にパーマロイを蒸着
し、さらにその上にホトレジスト被着し、その上
にホトマスクを置いて露光したのち現象してレジ
ストパターン１９を作成し、イオンエツチング法
によりパーマロイ薄膜の余分な部分を除去してパ
ーマロイパターン２０を形成する。次いでパーマ
ロイパターン上上に残つたレジスト１９を酸素プ
ラズマにてドライエツチングして除去する。従来
はこの工程で樹脂層１７が酸素プラズマによつて
“クラツグ”が入ることにより侵されたが本発明
法では無機質絶縁物の薄膜１８によつて保護され
るため侵されることはない。 FIG. 4 shows a cross-sectional view during the manufacturing process of a memory element formed by the method of the present invention. To explain the method of the present invention using diagrams, first, a nonmagnetic substrate (GGG) 1
A magnetic thin film 14 is formed on the substrate 3 by a liquid phase epitaxial growth method. Next, add SiO 2 to 1000Å on top of this.
An insulating layer 15 is formed by sputtering to a certain extent, and then
After vacuum-depositing Mo, Au, and Mo in the same batch, a resist pattern was created on top of this using photolithography, and Mo, Au, and Mo were deposited using ion etching.
A conductor pattern 16 is formed by etching Au and Mo. After etching, the resist is removed using oxygen plasma, and then the heat-resistant resin polyladder organosiloxane resin (PLOS resin) is applied to the entire surface.
A resin layer 17 is formed by spin coating to a thickness of 2500 Å. The steps up to this point are similar to those of the conventional example, but in the present invention, an inorganic insulating material is then sputtered to a thickness of about 1000 Å on the resin layer 17 to form a thin film 18 of inorganic insulating material. As this inorganic insulator, Al 2 O 3 , SiO 2 , SiO, silicon nitride, etc. are used. After this, permalloy is deposited, and then a photoresist is deposited on top of it, a photomask is placed on top of it and exposed, a resist pattern 19 is created, and the excess portion of the permalloy thin film is removed by ion etching. A permalloy pattern 20 is formed. Next, the resist 19 remaining on the permalloy pattern is removed by dry etching using oxygen plasma. Conventionally, in this step, the resin layer 17 was eroded by "cragging" caused by oxygen plasma, but in the method of the present invention, it is protected by the thin film 18 of inorganic insulator, so that the resin layer 17 is not eroded.
以上説明した如く本発明の磁気バブルメモリ素
子の製造方法は、SiO2絶縁層上に密着性および
平坦化効果の大きいポリラダーオルガノシロキサ
ン樹脂を使用し、且つ該樹脂層上に無機質の薄膜
層を設けることによりレジストの除去に酸素プラ
ズマを使用しても該樹脂に“クラツク”が発生せ
ず、絶縁耐圧の良好な製造性の優れた安価な磁気
バブルメモリ素子を提供することができる。 As explained above, the method for manufacturing a magnetic bubble memory element of the present invention uses a polyladder organosiloxane resin with great adhesion and flattening effect on the SiO 2 insulating layer, and also forms an inorganic thin film layer on the resin layer. By providing this, "cracks" do not occur in the resin even when oxygen plasma is used to remove the resist, and it is possible to provide an inexpensive magnetic bubble memory element with good dielectric strength and excellent manufacturability.
第１図は磁気バブルメモリ装置の１例の１部開
切して示した斜視図、第２図及び第３図は従来の
磁気バブルメモリ素子の部分断面図、第４図は本
発明にかかる磁気バブルメモリ素子の製造方法に
より形成されるメモリ素子の工程途中における断
面図である。
１３……非磁性基板（GGG）、１４……磁性薄
膜、１５……絶縁層、１６……導体パターン、１
７……樹脂層、１８……無機質絶縁物の薄膜、１
９……ホトレジスト、２０……パーマロイパター
ン。
FIG. 1 is a partially cutaway perspective view of an example of a magnetic bubble memory device, FIGS. 2 and 3 are partial cross-sectional views of a conventional magnetic bubble memory element, and FIG. 4 is a perspective view of a magnetic bubble memory device according to the present invention. FIG. 2 is a cross-sectional view of a memory element formed by a method for manufacturing a magnetic bubble memory element, in the middle of a process. 13...Nonmagnetic substrate (GGG), 14...Magnetic thin film, 15...Insulating layer, 16...Conductor pattern, 1
7...Resin layer, 18...Thin film of inorganic insulator, 1
9...Photoresist, 20...Permalloy pattern.
Claims (1)
膜を形成し、その上にSiO2からなる絶縁層を形
成し、次いでその上に導体パターンを形成したの
ち、全面にポリラダーオルガノシロキサン樹脂か
らなる耐熱性樹脂を塗布して樹脂層を形成し、該
樹脂層上に無機質絶縁物の薄膜を形成し、しかる
後該薄膜上にパーマロイパターンおよび保護絶縁
層を順次形成する諸工程よりなることを特徴とす
る磁気バブルメモリ素子の製造方法。1 A magnetic thin film with uniaxial anisotropy is formed on a non-magnetic substrate, an insulating layer made of SiO 2 is formed on it, a conductor pattern is formed on it, and then a polyladder organosiloxane resin is applied to the entire surface. It consists of the following steps: forming a resin layer by applying a heat-resistant resin consisting of the above, forming a thin film of an inorganic insulating material on the resin layer, and then sequentially forming a permalloy pattern and a protective insulating layer on the thin film. A method for manufacturing a magnetic bubble memory element characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15006680A JPS5773923A (en) | 1980-10-28 | 1980-10-28 | Preparation of magnetic bubble memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15006680A JPS5773923A (en) | 1980-10-28 | 1980-10-28 | Preparation of magnetic bubble memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5773923A JPS5773923A (en) | 1982-05-08 |
| JPS6137769B2 true JPS6137769B2 (en) | 1986-08-26 |
Family
ID=15488764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15006680A Granted JPS5773923A (en) | 1980-10-28 | 1980-10-28 | Preparation of magnetic bubble memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5773923A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0182753U (en) * | 1987-11-25 | 1989-06-01 |
-
1980
- 1980-10-28 JP JP15006680A patent/JPS5773923A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0182753U (en) * | 1987-11-25 | 1989-06-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5773923A (en) | 1982-05-08 |
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