JPS5990289A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To obtain a magnetic bubble memory element which has good operation characteristics by providing two kinds of gate and using them properly. CONSTITUTION:Two kinds of gate are provided on a crystal substrate 1. Namely, one gate has ''Permalloy'' first constitution which has a ''Permalloy'' pattern 6 under a conductor pattern 8 and has excellent operation characteristics without any step in the pattern 6, and the other has conductor first constitution which has the conductor pattern 4 under the pattern 6. Then, the ''Permalloy'' first constitution gate is used for a low-current replicator, etc., and the conductor first constitution is used for a high-current replicator, etc.; the gate are used properly to realize the magnetic bubble memory element which has the excellent operation characteristics.

Description

DETAILED DESCRIPTION OF THE INVENTION fi+ Technical Field of the Invention The present invention relates to a magnetic bubble memory element used in a storage device of an electronic computing device and its terminal.

(2) Background of the technology In general, magnetic thin films have an easy axis of magnetization of magnetic domains in the in-plane direction, but some materials, such as single crystals such as orthoferrite and magnetic garnet, have an easy axis of magnetization only in the C-axis direction. It has anisotropy. When a bias magnetic field of suitable strength is applied perpendicularly to a single crystal thin film of such a material, small cylindrical magnetic domains (called bubbles) are formed perpendicular to the film surface.

This bubble can be moved by suitably varying the external magnetic field. The magnetic puzzle memory is made by forming a large number of fine thin film patterns made of permalloy on the single-crystal thin film to serve as a bubble propagation path.
Information about the presence or absence of puzzles in turn 9 st 1 n
, ts Ott and is used as a memory.

(3) Prior Art and Problems Such a magnetic bubble memory device is provided with a bubble generator or a function gate such as a transfer gate, which is constructed by combining a permalloy pattern and a conductor pattern. These dart configurations include conductor first configurations and permalloy first configurations. Conductor first is a method in which a conductor pattern is first formed and then a Nog-Malloy turn is formed thereon, and Noguichi Malloy first is the opposite.

Conventionally, a conductor-first configuration has been mainly used, but in this structure FJy, a resist lift-off method or a resin braner is used to prevent the level difference due to the conductor or turn from causing a level difference to the upper layer or Maroino f Kuhn.
Although flattening has been achieved by the method, lift-off becomes difficult as the turn size and diameter become smaller due to higher density, or the characteristics deteriorate even with gentle steps due to the resin. influence In particular, as the nozzles and turns become smaller, their volume becomes smaller, and the force that drives the glass also decreases, so it is necessary to make the spacer between the glass and the glass thinner, but if the resin is made completely thin, There is a drawback that the influence of the above-mentioned level difference becomes large.

Therefore, when attempting to use the permalloy first configuration, this configuration has the disadvantage that the value of current flowing through the conductor must be increased due to the contactor effect and turnskeeper effect.

(4) Object of the Invention In view of the above-mentioned drawbacks of the prior art, the entire object of the present invention is to provide a magnetic bubble memory device with good operating characteristics.

(5) Structure and object of the invention According to the invention, a thin film pattern formed of a soft magnetic material and a thin film pattern formed of a conductive material on a magnetic puzzle crystal; In a magnetic bubble memory device having a gate section configured in combination, the gate section has two configurations: one with the conductor pattern facing down and the soft magnetic pattern facing up, and the other with the soft magnetic pattern facing down and the conductive pattern facing up. This is achieved by providing a magnetic bubble memory element characterized by having two types of cases configured as follows.

(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

1 to 7 are diagrams for explaining the entire magnetic bubble memory device according to the present invention. In the figure, 1 is a crystal substrate, 2 is a spacer, 4 and 8 are conductors, 6 is a soft magnetic /e-malloy/metal turn, 5.7 is an insulating layer, and 9 is a protective film. In this embodiment, as shown in Fig. 7,
The conductor/node is connected via the resin insulating layer 5 on the O-turn 4.
The gate part of the conductor-first structure in which the Maroino resistor 76 is completely formed, and the case of the Gu-Malloy-first structure in which the conductor Noreen 8 is formed on the barmalloin and the turn 6 through the insulating layer 7. Both parts are formed on the same substrate.

To form this, first, a conductor 32 of At-Cu or the like is deposited on the crystal substrate l as shown in FIG.
Deposit to a thickness of 4oooA. Next, as shown in Fig. 2, a photoresist is applied on the conductor film, and a turn is formed with only the conductor IX formed by conductor first.Then, the conductor is etched by ion milling to form the conductor
J-n 4 is formed, and then the resist is peeled off. Next, the resin shown in FIG. 3 (I) is completely coated and cured to form the insulating layer 5.

Next, as shown in Figure 4, iR-Malloy, which is a soft magnetic material, was
0 OA evaporation L, 9 turns using photoresist and Vermaroino? Form turn 6. At this time, if a minor loop J-turn is also formed, it is advantageous in terms of driving force because the surface is thin. Next, as shown in FIG. 5, a silicon-based resin is applied and cured to form an insulating layer 7. Next, as shown in FIG. 6, a pattern 8 is formed on the case part formed of G-Malloy first (by vapor depositing a conductor such as kA-Cu at 400'OA and in the same manner as in FIG. 2). Finally, as shown in FIG. 7, a protective film 9 is formed of silicon resin to obtain the magnetic pulley memory element of the present invention.

In this embodiment, configured in this way, the current is controlled so that no step is applied to the replicator, for example, in the replicator. Where the value is high, for example, Swatzzogut, the operating characteristics can be improved by using the conventional conductor-first configuration.

(7) Effects of the Invention As explained in detail above, the magnetic bubble memo V of the present invention
Due to the pattern shape of the element beam current value connecting part, only the gate part which also operates as a permalloy-first configuration is made into a permalloy-first configuration, and the other gate parts are made into a conductor-first configuration. This has a great effect in that good operating characteristics can be obtained.

[Brief explanation of the drawing]

1 to 6 are diagrams for explaining the entire manufacturing process of the magnetic puzzle memory device according to the present invention, and FIG. 7 is a diagram showing a cross section of the completed product. In the drawing, 1 is a crystal substrate, 2 is a spacer, 4 and 8
1 shows a conductor pattern, 5 and 7 a resin insulating layer, 6 a permalloy matrix, and 9 a protective film. Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

[Claims] 1. A magnetic bubble memory with a biased case on the magnetic bubble crystal, which is constructed by combining a thin film pattern made of a soft magnetic material and a # film pattern formed of a conductive material on a magnetic bubble crystal. In the device, the gate portion has a configuration in which the conductive pattern is on the bottom and the soft magnetic pattern is on the top, and a soft magnetic pattern on the top. 1. A magnetic bubble memory element having a structure in which the turns are on the bottom and the conductor pattern is on the top.