JPH0215946B2 - - Google Patents
Info
- Publication number
- JPH0215946B2 JPH0215946B2 JP14888080A JP14888080A JPH0215946B2 JP H0215946 B2 JPH0215946 B2 JP H0215946B2 JP 14888080 A JP14888080 A JP 14888080A JP 14888080 A JP14888080 A JP 14888080A JP H0215946 B2 JPH0215946 B2 JP H0215946B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- pattern
- insulating layer
- thin film
- memory element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 125000005375 organosiloxane group Chemical group 0.000 claims description 13
- 230000015654 memory Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910000889 permalloy Inorganic materials 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
本発明は磁気バブルメモリ素子の製造方法の改
良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method of manufacturing a magnetic bubble memory element.
最近用いられるようになつて来ている磁気バブ
ルメモリ装置は不揮発生であり、大容量高密度の
記憶が可能、低消費電力、小型軽量である等種々
の特徴をもつているため大容量メモリとして将来
が期待されている。この磁気バブルメモリ装置は
磁気バブルを磁界により磁性薄膜内を自由に動か
すことができることを利用したもので、第１図に
示す如く磁気バブルメモリ素子１、バブルを駆動
するための回転磁界発生用コイル２，２′、バブ
ルを安定に保持するためのバイアス磁界発生用磁
石３，３′等により構成されている。 Magnetic bubble memory devices, which have recently come into use, are non-volatile, capable of large-capacity, high-density storage, low power consumption, and are small and lightweight, making them suitable as large-capacity memories. The future is promising. This magnetic bubble memory device utilizes the fact that magnetic bubbles can be moved freely within a magnetic thin film by a magnetic field.As shown in Figure 1, a magnetic bubble memory element 1, a rotating magnetic field generating coil for driving the bubble 2, 2', bias magnetic field generating magnets 3, 3' for stably holding the bubble, and the like.
そしてメモリ素子１は第２図の断面図に示す如
く、例えば非磁性のガドリニウム・ガリウム・ガ
ーネツト（GGG）基板４の上に液相エピタキシ
ヤル成長法により磁性ガーネツトの薄膜５を形成
し、その上にSiO2等の絶縁層６および導体パタ
ーン７を順次形成し、次いで全面に第２の絶縁層
８を形成し、その上にパーマロイパターン９を形
成し、さらにその上に保護絶縁層１０を形成して
いる。このように形成された素子は、第２の絶縁
層８としてスパツタされたSiO2が導体パターン
７の形状をそのまま写し出しているため、導体パ
ターン７の角部で非常に薄くなり、また絶縁層８
の上に形成されたパーマロイパターン９に段が付
き、その附近の磁化が一様にならず磁気的不具合
を生ずる。そのため最近は第２の絶縁層８の平坦
化を計るためSiO2の代りに耐熱性術脂が用いら
れるようになつて来ている。この耐熱性術脂とし
てポリライダーオルガノシロキサン樹脂が用いら
れるが、このポリライダーオルガノシロキサン樹
脂の上に蒸着形成されたパーマロイパターンはそ
の保磁力がSiO2の上に形成されたときよりも増
大する現象が生じ、バブルの駆動に余分な電力が
必要となる。本発明はこの欠点を改良するために
案出されたものである。 As shown in the cross-sectional view of FIG. 2, the memory element 1 is manufactured by forming a thin film 5 of magnetic garnet, for example, on a non-magnetic gadolinium gallium garnet (GGG) substrate 4 by liquid phase epitaxial growth. An insulating layer 6 such as SiO 2 and a conductor pattern 7 are sequentially formed on the surface, then a second insulating layer 8 is formed on the entire surface, a permalloy pattern 9 is formed thereon, and a protective insulating layer 10 is further formed thereon. are doing. In the device formed in this way, the sputtered SiO 2 as the second insulating layer 8 mirrors the shape of the conductive pattern 7, so it becomes very thin at the corners of the conductive pattern 7, and the insulating layer 8
The permalloy pattern 9 formed thereon is stepped, and the magnetization in the vicinity thereof is not uniform, causing a magnetic defect. Therefore, in order to planarize the second insulating layer 8, heat-resistant synthetic resin has recently been used instead of SiO 2 . Polyrider organosiloxane resin is used as this heat-resistant surgical resin, but the permalloy pattern formed by vapor deposition on this polyrider organosiloxane resin has a phenomenon in which its coercive force is greater than when it is formed on SiO 2 . occurs, and extra power is required to drive the bubble. The present invention has been devised to improve this drawback.
このため本発明においては、非磁性基板の上に
一軸異方性の磁性薄膜を形成し、その上に絶縁層
を介して導体パターンを形成したのち、全面にポ
リライダーオルガノシロキサン樹脂を塗布して樹
脂層を形成し、その上に直接又は中間層を介して
Ni、Feを主成分とする磁性体薄膜のパターンを
形成する諸工程よりなる磁気バブルメモリ素子の
製造方法において、ポリラダーオルガノシロキサ
ン樹脂層は400℃以上の温度で加熱硬化せしめる
ことを特徴とするものである。 Therefore, in the present invention, a uniaxially anisotropic magnetic thin film is formed on a non-magnetic substrate, a conductor pattern is formed on it via an insulating layer, and then a polyrider organosiloxane resin is applied to the entire surface. Form a resin layer and apply directly or through an intermediate layer on top of it.
A method for manufacturing a magnetic bubble memory element comprising various steps of forming a pattern of a magnetic thin film mainly composed of Ni and Fe, characterized in that the polyladder organosiloxane resin layer is cured by heating at a temperature of 400°C or higher. It is something.
以下、添付図面に基づいて本発明方法を詳細に
説明する。 Hereinafter, the method of the present invention will be explained in detail based on the accompanying drawings.
第３図に本発明方法により形成されるメモリ素
子の断面図を示す。図を用いて本発明方法を説明
すると、先ず非磁性基板（GGG）１１の上に液
相成長法により磁性薄膜１２を形成する。次いで
この上にSiO2をスパツタして絶縁膜１３を形成
し、その上にMo、Au、Moを順次蒸着し、ホト
リソグラフイ法およびイオンエツチング法により
三層の導体パターン１４を形成する。次に全面に
ポリラダーオルガノシロキサン樹脂をスピンコー
トして樹脂層１５を形成する。次いでこの樹脂層
１５を基板ごと空気又は窒素雰囲気中で400℃〜
750℃に加熱する。次にこのように加熱処理され
た樹脂層１５の上にパーマロイ（主成分はNi80
％、Fe20％）を蒸着し、このパーマロイをホト
リソグラフイ法およびイオンエツチング法により
パーマロイパターン１６に形成し、次いでその上
にポリラダーオルガノシロキサン樹脂をスピンコ
ートし、熱硬化して保護絶縁層１７を形成して完
成する。 FIG. 3 shows a cross-sectional view of a memory element formed by the method of the present invention. To explain the method of the present invention with reference to the drawings, first, a magnetic thin film 12 is formed on a non-magnetic substrate (GGG) 11 by a liquid phase growth method. Next, an insulating film 13 is formed by sputtering SiO 2 thereon, Mo, Au, and Mo are sequentially deposited thereon, and a three-layer conductor pattern 14 is formed by photolithography and ion etching. Next, a resin layer 15 is formed by spin-coating polyladder organosiloxane resin over the entire surface. Next, this resin layer 15 is heated together with the substrate at 400°C in an air or nitrogen atmosphere.
Heat to 750℃. Next, permalloy (main component is Ni80) is placed on the heat-treated resin layer 15.
This permalloy is formed into a permalloy pattern 16 by photolithography and ion etching, and then a polyladder organosiloxane resin is spin-coated thereon and thermally cured to form a protective insulating layer 17. Form and complete.
このような本発明方法により形成されたメモリ
素子は、ポリラダーオルガノシロキサン樹脂層を
熱処理したことによりパーマロイパターンの保磁
力が低下したものとなる。第４図はポリラダーオ
ルガノシロキサン樹脂の熱処理温度とパーマロイ
の保磁力との関係を実験により求め線図により示
したものである。図は横軸に加熱温度を、縦軸に
保持力Hcをとり、その関係を曲線Ａにより示し
たものである。図より400℃以上において保持力
Hcが低下するのがわかる。また600℃以上におい
てHcはほぼ一定となるが750℃以上では樹脂の耐
熱性が限度となる。従つて本発明方法は加熱温度
範囲を400℃以上としたものである。 In the memory element formed by the method of the present invention, the coercive force of the permalloy pattern is reduced due to heat treatment of the polyladder organosiloxane resin layer. FIG. 4 is a diagram showing the relationship between the heat treatment temperature of polyladder organosiloxane resin and the coercive force of permalloy, which was obtained through experiments. In the figure, the horizontal axis represents the heating temperature and the vertical axis represents the holding force Hc, and the relationship is shown by curve A. From the figure, holding power above 400℃
It can be seen that Hc decreases. Moreover, Hc becomes almost constant at 600°C or higher, but at 750°C or higher, the heat resistance of the resin becomes the limit. Therefore, in the method of the present invention, the heating temperature range is 400°C or higher.
以上説明した如く本発明方法は、絶縁層にポリ
ラダーオルガノシロキサン樹脂を用い、その上に
パーマロイパターンを形成する磁気バブルメモリ
素子において、その樹脂層を加熱処理することに
よりパーマロイパターンの保磁力の増加を防止す
ることを可能としたものである。 As explained above, the method of the present invention uses polyladder organosiloxane resin for the insulating layer and increases the coercive force of the permalloy pattern by heat-treating the resin layer on which a permalloy pattern is formed. This makes it possible to prevent
第１図は磁気バブルメモリ装置の１例を一部開
切して示した斜視図、第２図は従来の磁気バブル
メモリ素子の部分断面図、第３図は本発明にかか
る磁気バブルメモリ素子の製造方法により形成さ
れるメモリ素子の部分断面図、第４図はポリラダ
ーオルガノシロキサン樹脂の加熱処理温度と、そ
の上に形成されたパーマロイパターンの保磁力と
の関係を示した線図である。
１１……非磁性基板（GGG）、１２……磁性薄
膜、１３……絶縁層、１４……導体パターン、１
５……ポリラダーオルガノシロキサン樹脂層、１
６……パーマロイパターン、１７……保護絶縁
層。
FIG. 1 is a partially cutaway perspective view of an example of a magnetic bubble memory device, FIG. 2 is a partial sectional view of a conventional magnetic bubble memory device, and FIG. 3 is a magnetic bubble memory device according to the present invention. FIG. 4 is a diagram showing the relationship between the heat treatment temperature of the polyladder organosiloxane resin and the coercive force of the permalloy pattern formed thereon. . 11...Nonmagnetic substrate (GGG), 12...Magnetic thin film, 13...Insulating layer, 14...Conductor pattern, 1
5...Polyladder organosiloxane resin layer, 1
6... Permalloy pattern, 17... Protective insulating layer.
Claims (1)
成し、その上に絶縁層を介して導体パターンを形
成したのち、全面にポリラダーオルガノシロキサ
ン樹脂を塗布して樹脂層を形成し、その上に直接
又は中間層を介してNi、Feを主成分とする磁性
体薄膜のパターンを形成する諸工程よりなる磁気
バブルメモリ素子の製造方法において、ポリラダ
ーオルガノシロキサン樹脂層は400℃以上の温度
で加熱硬化せしめることを特徴とする磁気バブル
メモリ素子の製造方法。1. Form a uniaxially anisotropic magnetic thin film on a non-magnetic substrate, form a conductor pattern on it via an insulating layer, and then apply polyladder organosiloxane resin to the entire surface to form a resin layer. In the manufacturing method of a magnetic bubble memory element, which consists of various steps of forming a pattern of a magnetic thin film mainly composed of Ni or Fe, either directly or through an intermediate layer, the polyladder organosiloxane resin layer is heated at a temperature of 400°C or higher. A method for manufacturing a magnetic bubble memory element characterized by curing it by heating at a temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14888080A JPS5773922A (en) | 1980-10-25 | 1980-10-25 | Preparation of magnetic bubble memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14888080A JPS5773922A (en) | 1980-10-25 | 1980-10-25 | Preparation of magnetic bubble memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5773922A JPS5773922A (en) | 1982-05-08 |
| JPH0215946B2 true JPH0215946B2 (en) | 1990-04-13 |
Family
ID=15462778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14888080A Granted JPS5773922A (en) | 1980-10-25 | 1980-10-25 | Preparation of magnetic bubble memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5773922A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121682A (en) * | 1982-12-28 | 1984-07-13 | Fujitsu Ltd | Bubble memory element |
-
1980
- 1980-10-25 JP JP14888080A patent/JPS5773922A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5773922A (en) | 1982-05-08 |
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