JPS6136956A - Ultraviolet erasing type semiconductor device - Google Patents

Ultraviolet erasing type semiconductor device

Info

Publication number
JPS6136956A
JPS6136956A JP15966084A JP15966084A JPS6136956A JP S6136956 A JPS6136956 A JP S6136956A JP 15966084 A JP15966084 A JP 15966084A JP 15966084 A JP15966084 A JP 15966084A JP S6136956 A JPS6136956 A JP S6136956A
Authority
JP
Japan
Prior art keywords
ultraviolet
chip
semiconductor device
erasing type
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15966084A
Other languages
Japanese (ja)
Inventor
Tadashi Uno
宇野 正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15966084A priority Critical patent/JPS6136956A/en
Publication of JPS6136956A publication Critical patent/JPS6136956A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/18Circuits for erasing optically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16151Cap comprising an aperture, e.g. for pressure control, encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Abstract

PURPOSE:To prevent an erasing by unnecessary ultraviolet rays of the memory contents of an ultraviolet erasing type erasable and writable semiconductor memory storage by forming a light-transmitting section, through which ultraviolet rays are transmitted, on the back of a package. CONSTITUTION:A chip 41 for an ultraviolet erasing type erasable and writable semiconductor memory storage is disposed into a ceramic-case 42. A metallic cover 44 with a glass window 43 is hermetically sealed on the lower side of the ceramic-case 42 by a solder material 45. The noses of external leads 48 are projected to the window side to the chip 41. According to such constitution, the glass window 43 is projected to the back side.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は紫外線消去型半導体装置に係り、特に紫外線を
通す透光部構造に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an ultraviolet erasable semiconductor device, and more particularly to a light-transmitting structure that transmits ultraviolet rays.

従来例の構成とその問題点 近時情報処理装置等に於て、紫外線消去型の消去、書き
込み可能な半導体記憶装置(以下、EP’−ROMと略
す)が多く用いられている。
2. Description of the Related Art Structures of Conventional Examples and Their Problems Recently, ultraviolet erasable erasable and writable semiconductor memory devices (hereinafter abbreviated as EP'-ROMs) have been widely used in information processing devices and the like.

従来、EP−ROMは第1図(イ)の断面図に示すよう
に、セラミック・ケース内に封止したもの1、或いは第
1図(ロ)、(ハ)の平面図および断面図のように、プ
ラスチック・ケースを用いて形成されたものが一般的で
ある。
Conventionally, EP-ROMs have been sealed in a ceramic case 1, as shown in the cross-sectional view of Figure 1 (A), or as shown in the plan view and cross-sectional view of Figures 1 (B) and (C). Generally, they are made using a plastic case.

即ち、従来はEP−ROMチップ1又は22のFにガラ
ス窓3或いは透光体27がのり、この面と反対の面、い
わゆる裏面側に外部リード8,25を引き出していた。
That is, conventionally, a glass window 3 or a transparent body 27 was placed on the F of the EP-ROM chip 1 or 22, and the external leads 8, 25 were drawn out to the opposite side, the so-called back side.

従来の構造においては、プリント基板或いはセット回路
板にEP−ROMを挿入した時、ガラス窓あるいは透光
体のような透光部が表面に出るため、実動作時には、紫
外線が外部からこの透光部を通してEP−ROMチップ
に達して記憶内容がこわれないように、同透光部の表面
を別の光じゃへい物でおおう必要があった。又、この透
光部表面のくもり等の汚染が加わり易く、紫外線の消去
特性が悪くなる等の問題もあった。
In the conventional structure, when an EP-ROM is inserted into a printed circuit board or a set circuit board, a transparent part such as a glass window or a transparent body comes out to the surface, so during actual operation, ultraviolet rays are absorbed from the outside. It was necessary to cover the surface of the light-transmitting part with another light barrier so that the stored contents would not be damaged by reaching the EP-ROM chip through the light-transmitting part. Further, there are also problems in that the surface of the light-transmitting portion is easily contaminated by clouding, and the erasing characteristics of ultraviolet rays are deteriorated.

発明の目的 本発明は上記問題点を解消することの可能な紫外線消去
型半導体装置を提供するものである。
OBJECTS OF THE INVENTION The present invention provides an ultraviolet erasable semiconductor device that can solve the above problems.

発明の構成 本発明は、紫外線消去型半導体装置の構造に於頼性のE
P−ROMの実現が可能である。
Structure of the Invention The present invention provides reliable E in the structure of an ultraviolet erasable semiconductor device.
It is possible to implement a P-ROM.

実施例の説明 以下木発ツ1の実施例について詳細に説明する。Description of examples The embodiment of Kibatsu 1 will be described in detail below.

第2図(イ)は、本発明を適用したセラミ、り・ケース
EP−ROMの断面図、第2N−)および(ハ)は、そ
れぞれ樹脂対1[;’4EP−ROMの実施例断面構造
である。第2図(イ)で、EP−ROMチンチップがセ
ラミック・ケース42内に配設され、このセラミック・
ケース42の下側にガラス窓43を有する金属蓋(又は
セラミック蓋)44がろう材(又は低融点ガラス)45
によって気密封着された構造になっている。なお、同図
中、46はチップ・ステージ、4了は内部配線、48が
外部リードであり、この外部リード48の先端は、チッ
プ41に対して窓側に出ている。49はボンディング・
ワイヤ50はボンディング・パッド、51は金シリコン
(Au −Si )合金、62はメタライズ部を示して
いる。第2図(ロ)では、EP−ROMチップ62の下
側に透光体67があり、透光体6γの下面がモールド樹
脂69の下面に表出する。65の外部リードが、チップ
62に対して透光体67と同一の側に出ている。第2図
(c+の実施例では、EP−ROMチップ82の周囲を
紫外線を通すシリコーン樹脂87でモールドし、更にそ
の1わりを所定の形状にエポキシ等の樹脂88でモール
ドしたものである。この場合、チップをおおうシリコー
ン樹脂87の下面がモールド樹脂88の下面に表出する
。85が外部リードであり、チップ82に対してシリコ
ーン樹脂87と同一の側に折り曲げられている。
FIG. 2(A) is a cross-sectional view of a ceramic case EP-ROM to which the present invention is applied, and FIG. It is. In FIG. 2(a), an EP-ROM chip is disposed within a ceramic case 42, and this ceramic
A metal lid (or ceramic lid) 44 having a glass window 43 on the lower side of the case 42 is filled with a brazing material (or low melting point glass) 45
It has a hermetically sealed structure. In the figure, 46 is a chip stage, 4 is an internal wiring, and 48 is an external lead, and the tip of the external lead 48 is exposed to the window side with respect to the chip 41. 49 is bonding
A wire 50 is a bonding pad, 51 is a gold-silicon (Au-Si) alloy, and 62 is a metallized portion. In FIG. 2(B), a light transmitting body 67 is provided below the EP-ROM chip 62, and the lower surface of the light transmitting body 6γ is exposed on the lower surface of the molding resin 69. External leads 65 protrude from the chip 62 on the same side as the transparent body 67 . In the embodiment shown in FIG. 2 (c+), the periphery of the EP-ROM chip 82 is molded with a silicone resin 87 that transmits ultraviolet rays, and a portion of it is further molded into a predetermined shape with a resin 88 such as epoxy. In this case, the lower surface of the silicone resin 87 covering the chip is exposed on the lower surface of the mold resin 88. 85 is an external lead, which is bent to the same side as the silicone resin 87 with respect to the chip 82.

発明の詳細 な説明したように、本発明によれば、紫外線消去型のE
P−ROMを従来製品とピンコンパチブルで、紫外線を
通すガラス窓或いは透光体と同一側に金属リードを出す
ことにより、このEP−ROMの実使用時にガラス窓或
いは透光体が表面に出ることなく裏面に出るように取り
付けられる。
As described in detail, according to the present invention, ultraviolet erasable E
By making the P-ROM pin-compatible with conventional products and protruding the metal lead on the same side as the glass window or transparent material that allows ultraviolet rays to pass through, the glass window or transparent material can be exposed to the surface when this EP-ROM is actually used. It can be installed so that it appears on the back side without any problems.

このため、EP−ROMの記憶内容が不要の紫外線によ
って消去されることがなく、ガラス窓或いは透光体でな
る透光部の表面が使用時にきすがつくなどして紫外線の
透過性が悪くなることもほとんど起らない。
Therefore, the stored contents of the EP-ROM are not erased by unnecessary ultraviolet rays, and the surface of the transparent part made of a glass window or transparent material becomes scratched during use, resulting in poor ultraviolet ray transmittance. It almost never happens.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(イ)は従来のEP−ROMのセラミックケース
の断面図、同図(ロ)はそのプラスチック完成体の上面
図、同図(ハ)は同図(ロ)のA −A’断面図、第2
図G)は本発明のEP−ROMに於けるセラミックケー
スの断面図、同図(ロ)はプラスチック完成体の断面図
、同図(ハ)は別のプラスチック完成体の断面図である
。 1.22,41.62.82・・印・チップ、3゜43
・・・・・・ガラス窓、27.67.87・・・・・・
透光体。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 特開I]RGI−36956(3) 丙2図
Figure 1 (A) is a cross-sectional view of the ceramic case of a conventional EP-ROM, Figure 1 (B) is a top view of the completed plastic case, and Figure 1 (C) is the A-A' cross section of Figure 1 (B). Figure, 2nd
Figure G) is a cross-sectional view of the ceramic case in the EP-ROM of the present invention, Figure (B) is a cross-sectional view of a completed plastic body, and Figure (C) is a cross-sectional view of another completed plastic body. 1.22, 41.62.82...mark/chip, 3°43
...Glass window, 27.67.87...
Translucent body. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure JP-A-I] RGI-36956 (3) Figure 2

Claims (1)

【特許請求の範囲】[Claims] 紫外線を通す透光部がパッケージの裏面に設けられたこ
とを特徴とする紫外線消去型半導体装置。
An ultraviolet erasable semiconductor device characterized in that a transparent part that transmits ultraviolet rays is provided on the back side of the package.
JP15966084A 1984-07-30 1984-07-30 Ultraviolet erasing type semiconductor device Pending JPS6136956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15966084A JPS6136956A (en) 1984-07-30 1984-07-30 Ultraviolet erasing type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15966084A JPS6136956A (en) 1984-07-30 1984-07-30 Ultraviolet erasing type semiconductor device

Publications (1)

Publication Number Publication Date
JPS6136956A true JPS6136956A (en) 1986-02-21

Family

ID=15698555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15966084A Pending JPS6136956A (en) 1984-07-30 1984-07-30 Ultraviolet erasing type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6136956A (en)

Similar Documents

Publication Publication Date Title
EP0580987A1 (en) Semiconductor device having a flag with opening
US5115299A (en) Hermetically sealed chip carrier with ultra violet transparent cover
US4766095A (en) Method of manufacturing eprom device
JPH07120732B2 (en) EPROM type semiconductor device erasable by ultraviolet rays and manufacturing method thereof
JPH026192A (en) Personal data card and manufacture thereof
JPS6136956A (en) Ultraviolet erasing type semiconductor device
JPS58210646A (en) Ic chip mold product
JPS62241358A (en) One-time program type semiconductor device
JPS58207656A (en) Resin-sealed type semiconductor device
JPS62131555A (en) Semiconductor integrated circuit device
JPS62239554A (en) Ic card type ep-rom structure
JPS6130743B2 (en)
JPS5989469A (en) Semiconductor memory device
US4918512A (en) Semiconductor package having an outwardly arced die cavity
JPS63133653A (en) Optically erasable semiconductor storage device
JPS5814553A (en) Semiconductor device
JPS60194552A (en) Hybrid ic device
JPH09298249A (en) Semiconductor device
JPH02110961A (en) Semiconductor element lead frame structure and manufacture thereof
JPS6237790A (en) Semiconductor device
JPS58128755A (en) Semiconductor device
JPS62136053A (en) Semiconductor device
JPS592155U (en) Resin-encapsulated integrated circuit
JPH03203355A (en) Ultraviolet-erasable semiconductor device
JPS62152144A (en) Package for semiconductor device