JPS6135703B2 - - Google Patents
Info
- Publication number
- JPS6135703B2 JPS6135703B2 JP56141934A JP14193481A JPS6135703B2 JP S6135703 B2 JPS6135703 B2 JP S6135703B2 JP 56141934 A JP56141934 A JP 56141934A JP 14193481 A JP14193481 A JP 14193481A JP S6135703 B2 JPS6135703 B2 JP S6135703B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- multilayer
- lsi
- wiring layer
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 14
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【発明の詳細な説明】
本発明は高密度LSI(Large Scale
Integration)パツケージに関する。[Detailed Description of the Invention] The present invention is a high-density LSI (Large Scale
Integration) Regarding packages.
近年、コンピユータの高性能化、小形化の要求
がますます高まり、このためハードウエアの主た
る部分を占めるLSIチツプおよびこれらを搭載す
るLSIパツケージについても高速度、高密度の条
件を満す構造を必要とするようになつてきた。 In recent years, demands for higher performance and smaller computers have been increasing, and for this reason, the LSI chips that make up the main part of the hardware, and the LSI packages that carry them, must also have a structure that satisfies the requirements of high speed and high density. It has come to be that way.
一方、LSIチツプについてはチツプ自身の高速
化をはかるとともに、チツプ間をも高速に信号を
伝送する必要性から高速、かつ高負荷駆動能力を
もつエミツタフオロア形出力回路を有するものが
使用されている。 On the other hand, in order to increase the speed of the chip itself and to transmit signals between chips at high speed, LSI chips with emitter follower type output circuits that are capable of driving high speeds and high loads are being used.
従来技術の例では、ICチツプ自身の速度も現
在のものに比べれば比較的低速であり、従つて
LSIパツケージ内の信号配線による信号伝搬回路
は集中定数回路とみなすことができたため信号波
形の終端方法は、厳密性を要求されず、例えば
ICチツプ内に形成された抵抗値精度の良くない
半導体抵抗を使用することも可能であつた。 In the example of the prior art, the speed of the IC chip itself is also relatively slow compared to the current one, so
Since the signal propagation circuit using the signal wiring inside the LSI package can be regarded as a lumped constant circuit, the method of terminating the signal waveform is not required to be exact; for example,
It was also possible to use a semiconductor resistor formed within an IC chip with poor resistance accuracy.
ところが前述のように最近になつて超高速の
LSIチツプが開発されエミツタフオロア形出力回
路でさらに信号波形も極めて高速なパルスが扱わ
れるようになつてくると、もはやLSIパツケージ
内の信号配線も分布定数回路として扱わなければ
ならなくなり、従つて信号波形に対する正確な終
端が必要となるとともに信号配線の遅延を少なく
するために信号配線長も最短に従つてLSIチツプ
をできるだけ近接して実装する工夫がなされなけ
ればならない。 However, as mentioned above, recently ultra-high-speed
As LSI chips were developed and emitter follower output circuits began to handle extremely high-speed pulses in signal waveforms, the signal wiring inside LSI packages no longer had to be treated as distributed constant circuits, and therefore the signal waveform In addition to requiring accurate termination for signal wiring, efforts must be made to minimize signal wiring length and mount LSI chips as close as possible in order to reduce signal wiring delays.
このため、LSIパツケージとしては前記LSIチ
ツプを高密度に搭載して高密度配線を収容すると
ともにLSIチツプから発生する熱を効率よく放散
させることが要求され、さらに高速度の条件を満
たすために前記信号配線の正確な終端のための高
精度の終端抵抗を収容することが要求されてい
る。 For this reason, LSI packages are required to mount the LSI chips in a high density, accommodate high-density wiring, and efficiently dissipate the heat generated from the LSI chips. There is a need to accommodate high precision termination resistors for accurate termination of signal wiring.
本発明の目的はセラミツク基板上に実装する
ICチツプ間の信号伝搬の高速化が実現でき、か
つ同時にICチツプを高密度に実装可能なマルチ
チツプLSIパツケージを提供することにある。 The object of the present invention is to mount it on a ceramic substrate.
The object of the present invention is to provide a multi-chip LSI package that can realize high-speed signal propagation between IC chips and can simultaneously mount IC chips at high density.
前記目的を達成するために本発明によるマルチ
チツプLSIパツケージは基板表面に終端抵抗体お
よびスルーホールパツドを有し、基板裏面に入出
力端子を有し、内層に多層電源配線層および内層
を貫通して前記スルーホールパツドと入出力端子
間を接続するスルーホールを有する積層形多層セ
ラミツク基板と、前記セラミツク基板表面の終端
抵抗体およびスルーホールパツドを覆うように形
成された多層配線層と、前記多層配線層上に配設
された複数個のICチツプキヤリアとで構成して
ある。 In order to achieve the above object, the multi-chip LSI package according to the present invention has a termination resistor and a through-hole pad on the surface of the substrate, has input/output terminals on the back surface of the substrate, and has a multilayer power supply wiring layer and a through-hole pad on the inner layer. a laminated multilayer ceramic substrate having a through hole connecting the through hole pad and the input/output terminal; a multilayer wiring layer formed to cover the termination resistor and the through hole pad on the surface of the ceramic substrate; It is composed of a plurality of IC chip carriers arranged on the multilayer wiring layer.
以下、図面を参照して本発明をさらに詳しく説
明する。 Hereinafter, the present invention will be explained in more detail with reference to the drawings.
第1図は本発明の実施例でマルチチツプLSIパ
ツケージの断面を示す図である。 FIG. 1 is a cross-sectional view of a multi-chip LSI package according to an embodiment of the present invention.
第1図において1はLSIチツプ、2はチツプキ
ヤリア、3はヒートシンク、4はチツプキヤリア
接続パツド、5は多層配線層、6は多層配線、7
はスルーホールパツド、8は終端抵抗、9は多層
セラミツク基板、10は多層電源配線、11は入
出力端子、12はスルーホールである。 In Figure 1, 1 is an LSI chip, 2 is a chip carrier, 3 is a heat sink, 4 is a chip carrier connection pad, 5 is a multilayer wiring layer, 6 is a multilayer wiring layer, 7
1 is a through-hole pad, 8 is a terminating resistor, 9 is a multilayer ceramic substrate, 10 is a multilayer power supply wiring, 11 is an input/output terminal, and 12 is a through hole.
第2図は本発明によるマルチチツプLSIパツケ
ージの平面図、第3図は第2図より多層配線層5
を取り除いて示した平面図である。 FIG. 2 is a plan view of a multi-chip LSI package according to the present invention, and FIG. 3 is a plan view of a multi-chip LSI package according to the present invention.
FIG.
第1図において、多層セラミツク基板9はその
内部に多層の電源配線10とスルーホール12を
含んでいる。このようなセラミツク基板は周知の
グリーンシート積層法による積層形多層セラミツ
ク基板として現在の技術で容易に実現できるもの
である。基板9の表面には第3図で示すようにス
ルーホール12と接続されたスルーホールパツド
7と終端抵抗8が形成されている。 In FIG. 1, a multilayer ceramic substrate 9 includes multilayer power supply wiring 10 and through holes 12 therein. Such a ceramic substrate can be easily realized with current technology as a laminated multilayer ceramic substrate by the well-known green sheet lamination method. On the surface of the substrate 9, as shown in FIG. 3, a through-hole pad 7 connected to the through-hole 12 and a terminating resistor 8 are formed.
終端抵抗8は例えば中性雰囲気中で焼成できる
周知の厚膜抵抗ペーストを用いて基板9の表面に
印刷焼成によつて形成されたものである。またス
ルーホールパツド7は基板9を製造するときに用
いられる金属材料ペースト(タングステンやモリ
ブデン)を印刷焼成し、その上に化学的な保護お
よび低接触抵抗をうるために金メツキが施された
ものである。 The terminating resistor 8 is formed on the surface of the substrate 9 by printing and baking, for example, using a well-known thick film resistor paste that can be baked in a neutral atmosphere. The through-hole pads 7 are made by printing and firing the metal material paste (tungsten or molybdenum) used when manufacturing the substrate 9, and gold plating is applied thereon to provide chemical protection and low contact resistance. It is something.
また基板9の裏面には入力端子11が構築され
ている。端子11は本実施例ではピンを銀ろう
材、などによりスルーホール12に導通するよう
にろう付けしたものである。 Further, an input terminal 11 is constructed on the back surface of the board 9. In this embodiment, the terminal 11 is a pin that is brazed with silver brazing material or the like so as to be electrically connected to the through hole 12.
多層配線層5は前記多層セラミツク基板9の表
面において終端抵抗8およびスルーホールパツド
7を覆うように形成したものであり、内部には多
層配線6が収容されている。 The multilayer wiring layer 5 is formed on the surface of the multilayer ceramic substrate 9 so as to cover the termination resistor 8 and the through hole pad 7, and the multilayer wiring 6 is housed inside.
多層配線6は各々のLSIチツプ1の信号端子
間、各々のLSIチツプ1の端子と入出力端子11
との間、各々のLSIチツプ1の信号端子と終端抵
抗8との間を導通して接続するためのものであ
り、多層配線層の内部を縦、横上下に走る配線パ
ターンである。 The multilayer wiring 6 is connected between the signal terminals of each LSI chip 1, and between the terminals of each LSI chip 1 and the input/output terminal 11.
It is a wiring pattern that runs vertically, horizontally, up and down inside the multilayer wiring layer, and is used to conduct and connect between the signal terminal of each LSI chip 1 and the terminating resistor 8.
多層配線層5を形成するためには、例えばポリ
イミドのような有機絶縁膜の上にスパツタにより
下地金属を付着させ、この金属膜上にフオトレジ
ストをコーテイングし配線パターンを露光現像し
てエツチングにより不要金属膜を取り除き、しか
る後配線パターンに良導体例えば銅などをメツキ
する手順をくり返せばよい。 In order to form the multilayer wiring layer 5, for example, a base metal is deposited on an organic insulating film such as polyimide by sputtering, a photoresist is coated on this metal film, a wiring pattern is exposed and developed, and unnecessary parts are removed by etching. The process of removing the metal film and then plating the wiring pattern with a good conductor such as copper may be repeated.
チツプキヤリア2は多層配線層5の表面に設け
られたチツプキヤリア接続パツド4に接続され
る。チツプキヤリア2の端子およびチツプキヤリ
ア接続パツド4は第2図で示すような構造になつ
ている。 The chip carrier 2 is connected to a chip carrier connection pad 4 provided on the surface of the multilayer wiring layer 5. The terminals of the chip carrier 2 and the chip carrier connection pad 4 are constructed as shown in FIG.
LSIチツプ1の端子は、チツプキヤリア2の内
部においてボンデイング接続されチツプキヤリア
2の4辺の端子部に導通しており、チツプキヤリ
ア2を接続パツド4に例えば半田付接続すること
により多層配線層5の内部の多層配線6との導通
接続が可能である。 The terminals of the LSI chip 1 are bonded inside the chip carrier 2 and are electrically connected to the terminals on the four sides of the chip carrier 2. By connecting the chip carrier 2 to the connection pads 4, for example, by soldering, the inside of the multilayer wiring layer 5 can be connected. A conductive connection with the multilayer wiring 6 is possible.
またチツプキヤリア2においてLSIチツプ1の
搭載面と対向する面にヒートシンク3が接続され
LSIチツプ1の発生する熱を効率よく放熱するこ
とができる。 In addition, a heat sink 3 is connected to the surface of the chip carrier 2 that faces the mounting surface of the LSI chip 1.
Heat generated by the LSI chip 1 can be efficiently dissipated.
本発明によるマルチチツプLSIパツケージは以
上のような構成であるので次のようなすぐれた特
徴を有する。 Since the multi-chip LSI package according to the present invention has the above-mentioned configuration, it has the following excellent features.
(1) 多層セラミツク基板9の内層に設けた多層配
線層を電源導体配線としているので電源配線の
低インピーダンス化が可能となり電源雑音の減
少により高速化が可能である。(1) Since the multilayer wiring layer provided in the inner layer of the multilayer ceramic substrate 9 is used as the power supply conductor wiring, it is possible to reduce the impedance of the power supply wiring and increase the speed by reducing power supply noise.
(2) 同時に多層配線層5の内部に大きな面積を占
める電源配線が不要となるので高密度の信号多
層配線が可能となる。(2) At the same time, since there is no need for power supply wiring occupying a large area inside the multilayer wiring layer 5, high-density multilayer signal wiring becomes possible.
(3) 多層配線層5を終端抵抗8を覆うように形成
するため終端抵抗8をセラミツク基板9の表面
全面に多層配線6が必要とするに十分な個数、
高密度に配置することができ、同時に信号線の
完全終端ができるので高速度化も実現できる。(3) In order to form the multilayer wiring layer 5 so as to cover the terminating resistor 8, the number of terminating resistors 8 is sufficient to cover the entire surface of the ceramic substrate 9 for the multilayer wiring 6;
They can be arranged in high density, and at the same time, signal lines can be completely terminated, making it possible to achieve high speeds.
(4) 多層配線6から入出力端子11への接続はス
ルーホールパツド7およびスルーホール12を
介して最短距離で行なつているためICチツプ
1の端子から入出力端子11までの配線長が短
くでき高速度化が可能となる。(4) Since the connection from the multilayer wiring 6 to the input/output terminal 11 is made via the through-hole pad 7 and the through-hole 12 over the shortest distance, the wiring length from the terminal of the IC chip 1 to the input/output terminal 11 is It can be shortened and high speed can be achieved.
(5) LSIチツプ1はチツプキヤリア2を介して搭
載されるためチツプキヤリア2にヒートシンク
3を取りつければより効率的な放熱が可能とな
り従つて発熱の制限に係るLSIチツプの搭載個
数を増大させることができ、
LSIチツプの高密度実装が可能となる。(5) Since the LSI chip 1 is mounted via the chip carrier 2, by attaching the heat sink 3 to the chip carrier 2, more efficient heat dissipation becomes possible, and therefore the number of mounted LSI chips related to heat generation limitation can be increased. This enables high-density packaging of LSI chips.
本発明は以上詳しく説明したように終端抵抗8
および入出力端子11に接続されたスルーホール
パツド7を有する多層セラミツク基板9とその表
面に構築された多層配線層5およびチツププキヤ
リア2とから構成することにより高密度、高速度
なマルチチツプLSIパツケージを実現できる。 As explained in detail above, the present invention provides a terminating resistor 8.
A high-density, high-speed multi-chip LSI package is constructed by comprising a multilayer ceramic substrate 9 having through-hole pads 7 connected to input/output terminals 11, a multilayer wiring layer 5 built on the surface thereof, and a chip carrier 2. realizable.
第1図乃至第3図は本発明の実施例を示す図で
ある。
1…LSIチツプ、2…チツプキヤリア、5…多
層配線層、7…スルーホールパツド、8…終端抵
抗、9…多層セラミツク基板、11…入出力端
子、12…スルーホール。
1 to 3 are diagrams showing embodiments of the present invention. 1...LSI chip, 2...chip carrier, 5...multilayer wiring layer, 7...through hole pad, 8...terminal resistor, 9...multilayer ceramic board, 11...input/output terminal, 12...through hole.
Claims (1)
ツドを有し、基板裏面に入出力端子を有し、内層
に多層電源配線層および内層を貫通して前記スル
ーホールパツドと入出力端子間を接続するスルー
ホールを有する積層形多層セラミツク基板と、前
記セラミツク基板表面の終端抵抗体およびスルー
ホールパツドを覆うように形成された多層配線層
と、前記多層配線層上に配設された複数個のIC
チツプキヤリアとで構成したことを特徴とするマ
ルチチツプLSIパツケージ。1 It has a terminating resistor and a through-hole pad on the surface of the board, has an input/output terminal on the backside of the board, and has a multilayer power supply wiring layer on the inner layer and a connection between the through-hole pad and the input/output terminal by penetrating the inner layer. a laminated multilayer ceramic substrate having through-holes; a multilayer wiring layer formed to cover the termination resistor and the through-hole pad on the surface of the ceramic substrate; and a plurality of wiring layers disposed on the multilayer wiring layer. I C
A multi-chip LSI package characterized by being configured with a chip carrier.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56141934A JPS5843553A (en) | 1981-09-08 | 1981-09-08 | Multi-chip lsi package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56141934A JPS5843553A (en) | 1981-09-08 | 1981-09-08 | Multi-chip lsi package |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5843553A JPS5843553A (en) | 1983-03-14 |
JPS6135703B2 true JPS6135703B2 (en) | 1986-08-14 |
Family
ID=15303540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56141934A Granted JPS5843553A (en) | 1981-09-08 | 1981-09-08 | Multi-chip lsi package |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5843553A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2978511B2 (en) * | 1989-09-20 | 1999-11-15 | 株式会社日立製作所 | Integrated circuit element mounting structure |
JPH02119164A (en) * | 1989-09-20 | 1990-05-07 | Hitachi Ltd | Semiconductor module |
JP2002111222A (en) * | 2000-10-02 | 2002-04-12 | Matsushita Electric Ind Co Ltd | Multilayer substrate |
JP2007165932A (en) * | 2007-02-22 | 2007-06-28 | Matsushita Electric Ind Co Ltd | Multilayer substrate |
-
1981
- 1981-09-08 JP JP56141934A patent/JPS5843553A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5843553A (en) | 1983-03-14 |
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