JPS6135653B2 - - Google Patents
Info
- Publication number
- JPS6135653B2 JPS6135653B2 JP7949577A JP7949577A JPS6135653B2 JP S6135653 B2 JPS6135653 B2 JP S6135653B2 JP 7949577 A JP7949577 A JP 7949577A JP 7949577 A JP7949577 A JP 7949577A JP S6135653 B2 JPS6135653 B2 JP S6135653B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- input surface
- chromium
- substrate
- ray image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 22
- 239000011651 chromium Substances 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 45
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 21
- 238000007747 plating Methods 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- DERRCVPMYGOTDB-UHFFFAOYSA-M P.[I-].I.I.I.[Cs+] Chemical compound P.[I-].I.I.I.[Cs+] DERRCVPMYGOTDB-UHFFFAOYSA-M 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- -1 sodium-activated cesium iodide phosphor Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【発明の詳細な説明】
Ｘ線イメージインテンシフアイアはＸ線像を電
子像に変換する入力面と、電子像を加速集束する
電極系と、集束された電子像を光像に変換する出
力面を有しており、前記入力面は、例えば沃化セ
シウム（CsI）蛍光体層と光電面から形成されて
おり、場合によつては前記蛍光体層と前記光電面
の間に光電面を保護する目的で例えばアルミナ
（Al2O3）が形成される。沃化セシウム蛍光体層は
アルミニウムなどの基板に蒸着によつて、300μ
ｍ程度以内の厚さに被着したものである。[Detailed description of the invention] An X-ray image intensifier has an input surface that converts an X-ray image into an electron image, an electrode system that accelerates and focuses the electron image, and an output surface that converts the focused electron image into a light image. The input surface is formed of, for example, a cesium iodide (CsI) phosphor layer and a photocathode, and in some cases, a protective layer is provided between the phosphor layer and the photocathode to protect the photocathode. For example, alumina (Al 2 O 3 ) is formed for this purpose. The cesium iodide phosphor layer is deposited on a substrate such as aluminum to a thickness of 300 μm.
It is coated to a thickness of about 1.0 m or less.
被写体を透過したＸ線像は前記蛍光体層に吸収
されて発光し、光像に変換される。沃化セシウム
蛍光体層中でＸ線像が光像に変換された場合、発
光した光はその周囲に拡がり、さらに基板面の乱
反射等も加わつて光像の分解能は低下する。この
光の散乱を防止するために、沃化セシウム蛍光体
層に基板に対して垂直な亀裂面を形成し、この亀
裂面によつて、光の散乱を防止する方法は分解能
の向上には有効なものである。 The X-ray image transmitted through the object is absorbed by the phosphor layer, emits light, and is converted into a light image. When an X-ray image is converted into an optical image in the cesium iodide phosphor layer, the emitted light spreads to its surroundings, and the resolution of the optical image is reduced due to the addition of diffuse reflection from the substrate surface. In order to prevent this light scattering, a method of forming a crack plane perpendicular to the substrate in the cesium iodide phosphor layer and preventing light scattering using this crack plane is effective for improving resolution. It is something.
従来、前記亀裂面を形成する方法として、基板
たとえばアルミニウム板とそれに付着しCsI蛍光
体層の膨張係数の違いを利用してCsI蛍光体層に
亀裂を生じさせる方法、さらにはアルミニウム板
上にあらかじめメツシユ状パターンを形成し、そ
の後CsI蛍光体層とを形成する方法が提案されて
いるが、良好な亀裂形成及び亀裂形成のための処
理の煩雑さ等不満足なものであつた。 Conventionally, methods for forming the crack surface include creating cracks in the CsI phosphor layer by utilizing the difference in expansion coefficient between a substrate such as an aluminum plate and a CsI phosphor layer attached thereto; A method has been proposed in which a mesh-like pattern is formed and then a CsI phosphor layer is formed, but this method is unsatisfactory due to good crack formation and complicated processing for crack formation.
本発明は以上の点に鑑みてなされたものでＸ線
イメージインテンシフアイアの製造法に係わり、
特に、入力面基板とCsI蛍光体層の間に外的条件
により比較的簡単に亀裂が入る層を形成し、以つ
て蛍光体内での発光の乱反射を防止し解像度の向
上に寄与するＸ線イメージインテンシフアイア製
造法を提供するものである。 The present invention has been made in view of the above points, and relates to a method for manufacturing an X-ray image intensifier.
In particular, a layer that cracks relatively easily due to external conditions is formed between the input surface substrate and the CsI phosphor layer, which prevents diffuse reflection of emitted light within the phosphor and contributes to improving the resolution of X-ray images. A method for manufacturing an intensifier is provided.
以下、本発明の実施例を説明する。 Examples of the present invention will be described below.
第１図は本発明方法によつて得られるＸ線イメ
ージインテンフアイアを示す概略構成断面図で、
真空外囲器１の前面板２の内側には、アルミニウ
ム板から成るドーム状の基板３が配置され、この
基板３に対向する外囲器の他端には出力面４が配
置される。蛍光出力面４に対面する凹面上には入
力面が形成されている。入力面は基板３上に電着
によつて形成されたクロム層５とこの層上に蒸着
によつて200μｍ厚のナトリウム付活沃化セシウ
ム蛍光体層（CsI／Na）６が被着され、さらにそ
の上に光電面７が形成されている。第２図は入力
面の光電面を除いた部分の要部の拡大図である。
（第１図と同一の部材は同一番号で示す）。さて、
この入力面は以下の様に形成される。すなわち、
第２図において、入力面の基板となるアルミニウ
ム板３上に次の条件でクロム層５をメツキする。 FIG. 1 is a schematic cross-sectional view showing an X-ray image intensifier obtained by the method of the present invention.
A dome-shaped substrate 3 made of an aluminum plate is disposed inside the front plate 2 of the vacuum envelope 1, and an output surface 4 is disposed at the other end of the envelope facing the substrate 3. An input surface is formed on the concave surface facing the fluorescent output surface 4. The input surface has a chromium layer 5 formed on the substrate 3 by electrodeposition, and a 200 μm thick sodium-activated cesium iodide phosphor layer (CsI/Na) 6 deposited on this layer by vapor deposition. Furthermore, a photocathode 7 is formed thereon. FIG. 2 is an enlarged view of the main part of the input surface excluding the photocathode.
(Identical parts to those in FIG. 1 are designated by the same numbers). Now,
This input surface is formed as follows. That is,
In FIG. 2, a chromium layer 5 is plated on an aluminum plate 3 serving as a substrate of an input surface under the following conditions.
メツキ浴は三酸化クロム（Cr2O3）200ｇｒ〜
250ｇｒ／、硫酸2.0〜2.5ｇｒ／、メツキ電
流20A〜70A／ｄm2で５〜300μｍ厚にメツキす
る。このクロムをメツキした基板上に、蒸着によ
つてナトリウム付活沃化セシウム蛍光体層６を
100〜300μｍ厚に被着する。蒸着後、真空内で前
記入力面を350℃以上に加熱処理する。必要であ
ればこの加熱処理後、さらに10〜20μｍ厚さの前
記蛍光体層を蒸着する。このようなクロムは水素
ガスの放出に基ずく気孔による亀裂を生じまた蒸
着蛍光体層も上記亀裂に応じた亀裂を生じる。 The plating bath uses chromium trioxide (Cr 2 O 3 ) 200g~
Plate to a thickness of 5 to 300 μm using 250 gr/dm2, 2.0 to 2.5 gr/dm of sulfuric acid, and 20 to 70 A/ dm2 plating current. On this chromium-plated substrate, a sodium-activated cesium iodide phosphor layer 6 is formed by vapor deposition.
Deposit to a thickness of 100 to 300 μm. After vapor deposition, the input surface is heated to 350° C. or higher in a vacuum. If necessary, after this heat treatment, a further 10-20 μm thick phosphor layer is deposited. Such chromium causes cracks due to pores due to the release of hydrogen gas, and the vapor-deposited phosphor layer also causes cracks corresponding to the above-mentioned cracks.
この結果、蛍光体内での発光は亀裂の生じた柱
状の蛍光体内で主に反射するだけで層内への散乱
が防止され、解像度が向上する。 As a result, the light emitted within the phosphor is mainly reflected within the cracked columnar phosphor, thereby preventing scattering into the layer and improving resolution.
ここで、入力面基板３上にクロム層を形成する
ポーラスクロム層となる理由について述べる。す
なわち、クロム層は、クロムメツキ時に発する水
素ガスがクロ結晶内に吸蔵されており、これを加
熱することにより、膨脹し、その圧力によつて水
素ガスが放散し、この時メツキされたクロム層は
水素ガスに基ずく気孔により亀裂を生じ、加熱処
理したクロム層はポーラスクロム層となる。 Here, the reason why the chromium layer is formed as a porous chromium layer on the input surface substrate 3 will be described. In other words, in the chromium layer, the hydrogen gas emitted during chromium plating is occluded in the chromium crystal, and when it is heated, it expands, and the hydrogen gas is dissipated by the pressure, and the chromium layer plated at this time Cracks occur due to pores created by hydrogen gas, and the heat-treated chromium layer becomes a porous chromium layer.
第３図は入力面基板がアルミニウムその他導電
性物質以外の絶縁性基板８である場合の他の実施
例を示す要部の拡大図で、絶縁性基板上に導電性
物質層９を被着し、この導電性物質層上にポーラ
スクロムメツキ層とCsI蛍光体層６を形成しもの
である。第４図は同じく入力面の要部を拡大して
示す実施例で、ポーラスクロムメツキの電着性を
良くするために、クロム層５と基板３の間に下地
メツキ層１０を設けた場合の実施例であり、下地
メツキ層基板上に亜鉛、銅、ニツケルの順に各層
を約0.5μｍメツキするかあるいは銅、ニツケル
の順にメツキしてもよい。クロムメツキ厚は、５
μｍ以上、300μｍ以下でも可能である。なお、
加熱処理における雰囲気は大気中、真空中でも可
能である。 FIG. 3 is an enlarged view of main parts showing another embodiment in which the input surface substrate is an insulating substrate 8 made of aluminum or other conductive material, in which a conductive material layer 9 is deposited on the insulating substrate. A porous chromium plating layer and a CsI phosphor layer 6 are formed on this conductive material layer. FIG. 4 shows an example in which the main part of the input surface is enlarged, and shows a case where a base plating layer 10 is provided between the chromium layer 5 and the substrate 3 in order to improve the electrodeposition of porous chrome plating. This is an example, and each layer of zinc, copper, and nickel may be plated to a thickness of about 0.5 μm on the base plating layer substrate, or copper and nickel may be plated in that order. Chrome plating thickness is 5
It is also possible to have a thickness of not less than μm and not more than 300 μm. In addition,
The atmosphere for the heat treatment can be air or vacuum.
なお、本実施例では入力面の基板上にクロム層
を形成後、CsI蛍光体を蒸着し、次いで加熱処理
する例について述べたが、クロム層形成後、加熱
処理を行ないポーラスクロム層とした後、CsI蛍
光体層を蒸着してもポーラスクロム層に生じた亀
裂に基ずきCsI蛍光体層が蒸着されるため、蛍光
体は柱状となり蛍光体層内での光の散乱防止機能
を有することとなる。なお、加熱処理した後のポ
ーラスクロム層は、加熱処理前よりやわらかくな
るため蛍光体層との付着力も強くなり、さらには
上記の入力面を使用したＸ線イメージインテンシ
フアイアにおいては、従来の分解能200μｍに対
して140μｍの分解能を有することが確認され
た。また蛍光体層に亀裂を入れる従来の方法に比
して、本発明の場合は簡単に亀裂が入るため、製
造工程の煩雑さがないなどの優れた効果を有す
る。 In this example, a chromium layer is formed on the substrate of the input surface, and then a CsI phosphor is vapor-deposited and then heat-treated. Even if the CsI phosphor layer is deposited, the CsI phosphor layer is deposited based on the cracks that occur in the porous chromium layer, so the phosphor becomes columnar and has the function of preventing light scattering within the phosphor layer. becomes. The porous chromium layer after heat treatment becomes softer than before heat treatment, and its adhesion to the phosphor layer becomes stronger. It was confirmed that the resolution was 140 μm compared to 200 μm. In addition, compared to the conventional method of creating cracks in the phosphor layer, the method of the present invention allows cracks to easily form, so that it has excellent effects such as eliminating the complexity of the manufacturing process.
第１図は本発明の実施例を説明するためのＸ線
イメージインテンシフアイアの概略断面図、第２
図ないし第４図は本発明に係わる入力面の要部の
拡大断面図である。
１……外囲器、２……前面板、３，８……入力
面基板、４……出力面、５……クロム層、６……
蛍光体層、７……光電面、９……導電性物質層、
１０……下地メツキ層。
FIG. 1 is a schematic sectional view of an X-ray image intensifier for explaining an embodiment of the present invention, and FIG.
4 through 4 are enlarged sectional views of essential parts of the input surface according to the present invention. DESCRIPTION OF SYMBOLS 1... Envelope, 2... Front plate, 3, 8... Input surface board, 4... Output surface, 5... Chrome layer, 6...
phosphor layer, 7... photocathode, 9... conductive material layer,
10... Base plating layer.
Claims (1)
を電子線像に変換する入力面と、この入力面から
の電子線像を加速集束する電極系と、前記外囲器
の他端にあつて前記入力面に対向して配置され、
前記電子線像を光学像に変換する出力面とから構
成されるＸ線イメージインテンシフアイアの製造
方法において、入力面基板上にクロム層を形成す
る工程と、このクロム層上に沃化セシウム蛍光体
層を形成する工程と、少なくともクロム層を加熱
する工程とを具備することを特徴とするＸ線イメ
ージインテンシフアイアの製造方法。 ２ 基板とクロム層を間に少なくとも亜鉛、銅、
ニツケルのうちいずれかを含む下地層を形成する
工程を含むことを特徴とする特許請求の範囲第１
項記載のＸ線イメージインテンシフアイアの製造
方法。[Claims] 1. An envelope, an input surface located at one end of the envelope that converts an X-ray image into an electron beam image, and an electrode system that accelerates and focuses the electron beam image from this input surface. , located at the other end of the envelope and facing the input surface,
The method for manufacturing an X-ray image intensifier comprising an output surface that converts an electron beam image into an optical image includes a step of forming a chromium layer on the input surface substrate, and a step of forming a cesium iodide fluorescent layer on the chromium layer. 1. A method for manufacturing an X-ray image intensifier, comprising the steps of forming a body layer and heating at least a chromium layer. 2 At least zinc, copper,
Claim 1, characterized in that it includes a step of forming a base layer containing any one of nickel.
A method for producing an X-ray image intensifier as described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7949577A JPS5414153A (en) | 1977-07-05 | 1977-07-05 | X-ray image intensifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7949577A JPS5414153A (en) | 1977-07-05 | 1977-07-05 | X-ray image intensifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5414153A JPS5414153A (en) | 1979-02-02 |
| JPS6135653B2 true JPS6135653B2 (en) | 1986-08-14 |
Family
ID=13691481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7949577A Granted JPS5414153A (en) | 1977-07-05 | 1977-07-05 | X-ray image intensifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5414153A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215059U (en) * | 1988-07-12 | 1990-01-30 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2929745C2 (en) * | 1979-07-23 | 1986-03-27 | Siemens AG, 1000 Berlin und 8000 München | Method for producing a fluorescent input screen of an X-ray image intensifier |
| JPS61142500A (en) * | 1984-12-17 | 1986-06-30 | コニカ株式会社 | Radiation image conversion panel and manufacture thereof |
-
1977
- 1977-07-05 JP JP7949577A patent/JPS5414153A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215059U (en) * | 1988-07-12 | 1990-01-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5414153A (en) | 1979-02-02 |
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