JPS6135264B2 - - Google Patents
Info
- Publication number
- JPS6135264B2 JPS6135264B2 JP52107439A JP10743977A JPS6135264B2 JP S6135264 B2 JPS6135264 B2 JP S6135264B2 JP 52107439 A JP52107439 A JP 52107439A JP 10743977 A JP10743977 A JP 10743977A JP S6135264 B2 JPS6135264 B2 JP S6135264B2
- Authority
- JP
- Japan
- Prior art keywords
- strain
- nickel
- semiconductor
- semiconductor strain
- measuring device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 51
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 229910000531 Co alloy Inorganic materials 0.000 claims description 18
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 claims description 14
- 229910017052 cobalt Inorganic materials 0.000 claims description 11
- 239000010941 cobalt Substances 0.000 claims description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 4
- 238000005482 strain hardening Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 238000005097 cold rolling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003938 response to stress Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Heat Treatment Of Steel (AREA)
- Measurement Of Force In General (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10743977A JPS5441176A (en) | 1977-09-07 | 1977-09-07 | Semiconductor strain measuring device |
| US05/940,077 US4166384A (en) | 1977-09-07 | 1978-09-06 | Semiconductor transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10743977A JPS5441176A (en) | 1977-09-07 | 1977-09-07 | Semiconductor strain measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5441176A JPS5441176A (en) | 1979-04-02 |
| JPS6135264B2 true JPS6135264B2 (OSRAM) | 1986-08-12 |
Family
ID=14459167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10743977A Granted JPS5441176A (en) | 1977-09-07 | 1977-09-07 | Semiconductor strain measuring device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4166384A (OSRAM) |
| JP (1) | JPS5441176A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004020368A (ja) * | 2002-06-17 | 2004-01-22 | Japan Science & Technology Corp | ロボット指関節等に応用できる高感度トルクセンサ調整方法 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56124030A (en) * | 1980-03-05 | 1981-09-29 | Nippon Gakki Seizo Kk | Manufacture of semiconductor pressure detector |
| JPS5723830A (en) * | 1980-07-18 | 1982-02-08 | Hitachi Ltd | Post material for pressure transducer of semiconductor and its preparation |
| US4498231A (en) * | 1982-02-26 | 1985-02-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Thin film strain transducer |
| US4425808A (en) | 1982-02-26 | 1984-01-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Thin film strain transducer |
| CH655391B (OSRAM) * | 1982-03-25 | 1986-04-15 | ||
| JPS6348131U (OSRAM) * | 1986-09-16 | 1988-04-01 | ||
| US5088329A (en) * | 1990-05-07 | 1992-02-18 | Sahagen Armen N | Piezoresistive pressure transducer |
| JPH05196458A (ja) * | 1991-01-04 | 1993-08-06 | Univ Leland Stanford Jr | 原子力顕微鏡用ピエゾ抵抗性片持ばり構造体 |
| DE4227764A1 (de) * | 1992-08-24 | 1994-03-03 | Schenck Ag Carl | Sensor zum Erfassen mechanischer Belastungen |
| US5526112A (en) * | 1993-03-05 | 1996-06-11 | Sahagen; Armen N. | Probe for monitoring a fluid medium |
| US5510895A (en) * | 1993-03-05 | 1996-04-23 | Sahagen; Armen N. | Probe for monitoring a fluid medium |
| US20060030062A1 (en) * | 2004-08-05 | 2006-02-09 | Jun He | Micromachined wafer strain gauge |
| JP4926543B2 (ja) * | 2006-05-24 | 2012-05-09 | 中国電力株式会社 | 歪測定装置 |
| JP6093622B2 (ja) * | 2013-03-29 | 2017-03-08 | 大和製衡株式会社 | ヒステリシス誤差補償装置、荷重センサ、計量装置およびヒステリシス誤差補償方法 |
| JP7114032B2 (ja) * | 2018-09-26 | 2022-08-08 | ユニパルス株式会社 | 荷重変換器 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3446064A (en) * | 1966-12-19 | 1969-05-27 | Whittaker Corp | Stress sensor |
| US4019388A (en) * | 1976-03-11 | 1977-04-26 | Bailey Meter Company | Glass to metal seal |
-
1977
- 1977-09-07 JP JP10743977A patent/JPS5441176A/ja active Granted
-
1978
- 1978-09-06 US US05/940,077 patent/US4166384A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004020368A (ja) * | 2002-06-17 | 2004-01-22 | Japan Science & Technology Corp | ロボット指関節等に応用できる高感度トルクセンサ調整方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5441176A (en) | 1979-04-02 |
| US4166384A (en) | 1979-09-04 |
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